Fairchild/ON Semiconductor Products

IGBT 650V 150A 455W TO-247

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 150A
• Current - Collector Pulsed (Icm): 225A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
• Power - Max: 455W
• Switching Energy: 2.4mJ (on), 720µJ (off)
• Input Type: Standard
• Gate Charge: 123nC
• Td (on/off) @ 25°C: 28ns/80ns
• Test Condition: 400V, 75A, 3 Ohm, 15V
• Reverse Recovery Time (trr): 43.4ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247 Long Leads

MOSFET N-CH 300V 5.4A I2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 300V
• Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 3.13W (Ta), 70W (Tc)
• Rds On (Max) @ Id, Vgs: 900 mOhm @ 2.7A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: I2PAK
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

MOSFET N-CH 50V 14A TO-252AA

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 50V
• Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 40nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 48W (Tc)
• Rds On (Max) @ Id, Vgs: 100 mOhm @ 14A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252AA
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

MOSFET N-CH 600V 7.5A I2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1255pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 3.13W (Ta), 147W (Tc)
• Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3.75A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: I2PAK (TO-262)
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

MOSFET P-CH 20V 8-MLP

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 74nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 7995pF @ 10V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 2.3W (Ta), 26W (Tc)
• Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 14A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-MLP (3.3x3.3)
• Package / Case: 8-PowerWDFN

MOSFET N-CH 55V 20A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 44nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 93W (Tc)
• Rds On (Max) @ Id, Vgs: 36 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252AA
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

JFET N-CH 25V 15MA TO92

• Transistor Type: N-Channel JFET
• Frequency: -
• Gain: -
• Voltage - Test: -
• Current Rating: 15mA
• Noise Figure: -
• Current - Test: -
• Power - Output: -
• Voltage - Rated: 25V
• Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
• Supplier Device Package: TO-92-3

TRANS NPN 400V 4A TO-220

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 4A
• Voltage - Collector Emitter Breakdown (Max): 400V
• Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 4A
• Current - Collector Cutoff (Max): 1µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 19 @ 1A, 5V
• Power - Max: 75W
• Frequency - Transition: 4MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220-3

TRANS PNP 25V 0.3A TO-92

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 300mA
• Voltage - Collector Emitter Breakdown (Max): 25V
• Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 1V
• Power - Max: 400mW
• Frequency - Transition: -
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Supplier Device Package: TO-92-3

TRANS NPN 30V 0.1A TO-92

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 30V
• Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
• Current - Collector Cutoff (Max): 15nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
• Power - Max: 500mW
• Frequency - Transition: 300MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
• Supplier Device Package: TO-92-3

TRANS PNP 60V 2A TO-92

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 2A
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1A, 2V
• Power - Max: 625mW
• Frequency - Transition: 75MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Supplier Device Package: TO-92-3

TRANS NPN 25V 1.5A TO-92

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1.5A
• Voltage - Collector Emitter Breakdown (Max): 25V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 100mA, 1V
• Power - Max: 1W
• Frequency - Transition: 100MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Supplier Device Package: TO-92-3

TRANS PREBIAS PNP 300MW TO92S

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 2.2k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 200MHz
• Power - Max: 300mW
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 Short Body
• Supplier Device Package: TO-92S

DIODE ZENER 18V 1W DO41

• Voltage - Zener (Nom) (Vz): 18V
• Tolerance: ±6%
• Power - Max: 1W
• Impedance (Max) (Zzt): 20 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 12.5V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 200°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

DIODE ZENER 7.5V 200MW SOD523F

• Voltage - Zener (Nom) (Vz): 7.5V
• Tolerance: ±6%
• Power - Max: 200mW
• Impedance (Max) (Zzt): 15 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 5V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SC-79, SOD-523F
• Supplier Device Package: SOD-523F

DIODE GEN PURP 40V 200MA DO35

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io): 200mA
• Voltage - Forward (Vf) (Max) @ If: 880mV @ 20mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 4ns
• Current - Reverse Leakage @ Vr: 50nA @ 30V
• Capacitance @ Vr, F: 2pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35
• Operating Temperature - Junction: 175°C (Max)

IC BALLAST DRIVER 8DIP

• Type: Ballast Controller
• Frequency: 18kHz ~ 22kHz
• Voltage - Supply: 11 V ~ 14 V
• Current - Supply: 600µA
• Current - Output Source/Sink: -
• Dimming: No
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Through Hole
• Package / Case: 8-DIP (0.300", 7.62mm)
• Supplier Device Package: 8-DIP

IC REGISTER QUAD 2PORT 16SOIC

• Type: Multiplexer
• Circuit: 4 x 2:1
• Independent Circuits: 1
• Current - Output High, Low: 1mA, 20mA
• Voltage Supply Source: Single Supply
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 16-SOIC

IC GATE NOR 4CH 2-INP 14-TSSOP

• Logic Type: NOR Gate
• Number of Circuits: 4
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 2 V ~ 3.6 V
• Current - Quiescent (Max): 10µA
• Current - Output High, Low: 24mA, 24mA
• Logic Level - Low: 0.7 V ~ 0.8 V
• Logic Level - High: 1.7 V ~ 2 V
• Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 50pF
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Supplier Device Package: 14-TSSOP
• Package / Case: 14-TSSOP (0.173", 4.40mm Width)

IC DRVR VID FILTER 3CH 14-TSSOP

• Type: Driver
• Applications: Recorders, Set-Top Boxes
• Mounting Type: Surface Mount
• Package / Case: 14-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 14-TSSOP

LED RED DIFF 3MM ROUND T/H

• Color: Red
• Configuration: -
• Lens Color: Red
• Lens Transparency: Diffused
• Millicandela Rating: 4mcd
• Lens Style/Size: Round with Domed Top, 3mm (T-1), 3.00mm
• Voltage - Forward (Vf) (Typ): 2V
• Current - Test: 10mA
• Viewing Angle: 90°
• Mounting Type: Through Hole
• Wavelength - Dominant: -
• Wavelength - Peak: 635nm
• Features: -
• Package / Case: Radial
• Supplier Device Package: T-1
• Size / Dimension: -
• Height (Max): 6.30mm

TVS DIODE 70.1VWM 113VC DO201AE

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 70.1V
• Voltage - Breakdown (Min): 77.9V
• Voltage - Clamping (Max) @ Ipp: 113V
• Current - Peak Pulse (10/1000µs): 13.3A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AE, Axial
• Supplier Device Package: DO-201AE

TVS DIODE 300VWM 482VC DO15

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 300V
• Voltage - Breakdown (Min): 332V
• Voltage - Clamping (Max) @ Ipp: 482V
• Current - Peak Pulse (10/1000µs): 1.3A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-15

SENSR OPTO TRANS 3.81MM REFL PCB

• Sensing Distance: 0.150" (3.81mm)
• Sensing Method: Reflective
• Voltage - Collector Emitter Breakdown (Max): 30V
• Current - Collector (Ic) (Max): 20mA
• Current - DC Forward (If) (Max): 50mA
• Output Type: Phototransistor
• Response Time: 8µs, 8µs
• Mounting Type: Through Hole
• Package / Case: PCB Mount

OPTOISOLATOR 3.75KV TRIAC 4MFP

• Output Type: Triac
• Zero Crossing Circuit: No
• Number of Channels: 1
• Voltage - Isolation: 3750Vrms
• Voltage - Off State: 600V
• Static dV/dt (Min): 1kV/µs
• Current - LED Trigger (Ift) (Max): 10mA
• Current - On State (It (RMS)) (Max): 70mA
• Current - Hold (Ih): 300µA (Typ)
• Turn On Time: -
• Voltage - Forward (Vf) (Typ): 1.2V
• Current - DC Forward (If) (Max): 60mA
• Operating Temperature: -40°C ~ 100°C
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, Gull Wing
• Supplier Device Package: 4-Mini-Flat
• Approvals: BSI, CSA, UL, VDE

OPTOISO 5.3KV TRANS W/BASE 6SMD

• Number of Channels: 1
• Voltage - Isolation: 5300Vrms
• Current Transfer Ratio (Min): 75% @ 10mA
• Current Transfer Ratio (Max): -
• Turn On / Turn Off Time (Typ): 1.6µs, 18µs
• Rise / Fall Time (Typ): 1.3µs, 16µs
• Input Type: DC
• Output Type: Transistor with Base
• Voltage - Output (Max): 30V
• Current - Output / Channel: 150mA
• Voltage - Forward (Vf) (Typ): 1.25V
• Current - DC Forward (If) (Max): 50mA
• Vce Saturation (Max): 400mV
• Operating Temperature: -55°C ~ 100°C
• Mounting Type: Surface Mount
• Package / Case: 6-SMD, Gull Wing
• Supplier Device Package: 6-SMD

OPTOISO 3.75KV OPN COLLECTOR 8SO

• Number of Channels: 1
• Inputs - Side 1/Side 2: 1/0
• Voltage - Isolation: 3750Vrms
• Common Mode Transient Immunity (Min): 10kV/µs
• Input Type: DC
• Output Type: Open Collector
• Current - Output / Channel: 50mA
• Data Rate: 10Mbps
• Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
• Rise / Fall Time (Typ): 50ns, 12ns
• Voltage - Forward (Vf) (Typ): 1.75V (Max)
• Current - DC Forward (If) (Max): 50mA
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO Tall

OPTOISO 5KV GATE DRIVER 5SOP

• Technology: Optical Coupling
• Number of Channels: 1
• Voltage - Isolation: 5000Vrms
• Common Mode Transient Immunity (Min): 20kV/µs
• Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
• Pulse Width Distortion (Max): 300ns
• Rise / Fall Time (Typ): 60ns, 60ns
• Current - Output High, Low: 2A, 2A
• Current - Peak Output: 3A
• Voltage - Forward (Vf) (Typ): 1.5V
• Current - DC Forward (If) (Max): 25mA
• Voltage - Supply: 16 V ~ 30 V
• Operating Temperature: -40°C ~ 100°C
• Mounting Type: Surface Mount
• Package / Case: 6-SOIC (0.346", 8.80mm Width) 5 Leads
• Supplier Device Package: 5-SOP
• Approvals: UL