Fairchild/ON Semiconductor Products

IGBT 1200V 24A 200W TO3P

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 24A
• Current - Collector Pulsed (Icm): 45A
• Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 15A
• Power - Max: 200W
• Switching Energy: 3.27mJ (on), 600µJ (off)
• Input Type: Standard
• Gate Charge: 120nC
• Td (on/off) @ 25°C: 90ns/310ns
• Test Condition: 600V, 15A, 20 Ohm, 15V
• Reverse Recovery Time (trr): 330ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3P-3, SC-65-3
• Supplier Device Package: TO-3PN

ECOSPARK2-450V IGNITION IGBT

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 450V
• Current - Collector (Ic) (Max): 23A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A
• Power - Max: 150W
• Switching Energy: -
• Input Type: Logic
• Gate Charge: 23nC
• Td (on/off) @ 25°C: 900ns/5.4µs
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252AA

MOSFET P-CH 200V 2.2A TO-220F

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 32W (Tc)
• Rds On (Max) @ Id, Vgs: 2.7 Ohm @ 1.1A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220F
• Package / Case: TO-220-3 Full Pack

MOSFET N-CH 80V 17A 8-PQFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 80V
• Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 50A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
• Vgs(th) (Max) @ Id: 4.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6290pF @ 40V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
• Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 17A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-PQFN (5x6), Power56
• Package / Case: 8-PowerTDFN

MOSFET N-CH 600V 22A TO-220F

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 100V
• Vgs (Max): ±45V
• FET Feature: -
• Power Dissipation (Max): 39W (Tc)
• Rds On (Max) @ Id, Vgs: 165 mOhm @ 11A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220F
• Package / Case: TO-220-3 Full Pack

JFET N-CH 30V 5MA TO92

• Transistor Type: N-Channel JFET
• Frequency: 1kHz
• Gain: -
• Voltage - Test: 15V
• Current Rating: 5mA
• Noise Figure: 2dB
• Current - Test: -
• Power - Output: -
• Voltage - Rated: 30V
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Supplier Device Package: TO-92-3

TRANS PNP 35V 2A E-LINE

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 2A
• Voltage - Collector Emitter Breakdown (Max): 35V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
• Power - Max: 1W
• Frequency - Transition: 100MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Supplier Device Package: TO-226

TRANS NPN 45V 2A TO-126

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 2A
• Voltage - Collector Emitter Breakdown (Max): 45V
• Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
• Current - Collector Cutoff (Max): 2µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
• Power - Max: 25W
• Frequency - Transition: -
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-225AA, TO-126-3
• Supplier Device Package: TO-126

TRANS NPN 800V 2A TO-220

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 2A
• Voltage - Collector Emitter Breakdown (Max): 800V
• Vce Saturation (Max) @ Ib, Ic: 750mV @ 330mA, 1A
• Current - Collector Cutoff (Max): 100µA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 400mA, 3V
• Power - Max: 100W
• Frequency - Transition: 5MHz
• Operating Temperature: -55°C ~ 125°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220-3

TRANS NPN 120V 6A TO-220

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 6A
• Voltage - Collector Emitter Breakdown (Max): 120V
• Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
• Current - Collector Cutoff (Max): 1mA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 5V
• Power - Max: 40W
• Frequency - Transition: 10MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220-3

TRANS PNP DARL 60V 5A TO-220

• Transistor Type: PNP - Darlington
• Current - Collector (Ic) (Max): 5A
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 4V @ 20mA, 5A
• Current - Collector Cutoff (Max): 2mA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 3V
• Power - Max: 2W
• Frequency - Transition: -
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220-3

TRANSISTOR NPN 15V 50MA SOT-23

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 15V
• Frequency - Transition: 1.1GHz
• Noise Figure (dB Typ @ f): -
• Gain: -
• Power - Max: 150mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V
• Current - Collector (Ic) (Max): 50mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3 (TO-236)

SMART POWER MODULE 15A SPM27-BA

• Type: IGBT
• Configuration: 3 Phase
• Current: 15A
• Voltage: 600V
• Voltage - Isolation: 2500Vrms
• Package / Case: 27-PowerDIP Module (1.205", 30.60mm)

DIODE ZENER 11V 500MW DO35

• Voltage - Zener (Nom) (Vz): 11V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 20 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 8V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 100mA
• Operating Temperature: -65°C ~ 200°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35

DIODE ARRAY GP 200V 200MA SOT23

• Diode Configuration: 1 Pair Common Anode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io) (per Diode): 200mA
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10nA @ 180V
• Operating Temperature - Junction: 150°C (Max)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

DIODE ARRAY GP 600V 4A TO220

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io) (per Diode): 4A
• Voltage - Forward (Vf) (Max) @ If: 2.4V @ 4A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 22ns
• Current - Reverse Leakage @ Vr: 100µA @ 600V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

IC USB SW CHARGER LI-ION 30WLCSP

• Battery Chemistry: Lithium-Ion/Polymer
• Number of Cells: 1
• Current - Charging: Constant - Programmable
• Programmable Features: Current, Timer, Voltage
• Fault Protection: Over Temperature, Over Voltage, Short Circuit
• Charge Current - Max: 1.5A
• Battery Pack Voltage: -
• Voltage - Supply (Max): 9.5V
• Interface: I2C
• Operating Temperature: -30°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: 30-UFBGA, WLCSP
• Supplier Device Package: 30-WLCSP (2.46x2.26)

IC SWIT PWM GREEN CM OVP HV 8DIP

• Output Isolation: Isolated
• Internal Switch(s): Yes
• Voltage - Breakdown: 650V
• Topology: Flyback
• Voltage - Start Up: 12V
• Voltage - Supply (Vcc/Vdd): 8 V ~ 20 V
• Duty Cycle: 77%
• Frequency - Switching: 100kHz
• Power (Watts): 27W
• Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
• Control Features: -
• Operating Temperature: -25°C ~ 85°C (TA)
• Package / Case: 8-DIP (0.300", 7.62mm)
• Supplier Device Package: 8-DIP
• Mounting Type: Through Hole

MULTIPLEXER QUAD 2IN LV 16SOIC

• Type: Multiplexer
• Circuit: 4 x 2:1
• Independent Circuits: 1
• Current - Output High, Low: 12mA, 12mA
• Voltage Supply Source: Single Supply
• Voltage - Supply: 2 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 16-SOIC

IC GATE NOR 4CH 2-INP 14-SOIC

• Logic Type: NOR Gate
• Number of Circuits: 4
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 2 V ~ 3.6 V
• Current - Quiescent (Max): 10µA
• Current - Output High, Low: 24mA, 24mA
• Logic Level - Low: 0.7 V ~ 0.8 V
• Logic Level - High: 1.7 V ~ 2 V
• Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 50pF
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Supplier Device Package: 14-SOP
• Package / Case: 14-SOIC (0.209", 5.30mm Width)

IC GATE NOR 1CH 2-INP SC-70-5

• Logic Type: NOR Gate
• Number of Circuits: 1
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 1.65 V ~ 5.5 V
• Current - Quiescent (Max): 2µA
• Current - Output High, Low: 32mA, 32mA
• Logic Level - Low: -
• Logic Level - High: -
• Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Supplier Device Package: SC-70-5
• Package / Case: 5-TSSOP, SC-70-5, SOT-353

IC TRANSCEIVER 3ST 8BIT 20DIP

• Logic Type: Transceiver, Non-Inverting
• Number of Elements: 1
• Number of Bits per Element: 8
• Input Type: -
• Output Type: Push-Pull
• Current - Output High, Low: 3mA, 24mA; 15mA, 64mA
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Through Hole
• Package / Case: 20-DIP (0.300", 7.62mm)
• Supplier Device Package: 20-PDIP

IC BUFFER DL UHS N-INV SC70-6

• Logic Type: Buffer, Non-Inverting
• Number of Elements: 2
• Number of Bits per Element: 1
• Input Type: -
• Output Type: Push-Pull
• Current - Output High, Low: 32mA, 32mA
• Voltage - Supply: 1.65 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: SC-70-6

LED RED DIFFUSED AXIAL

• Color: Red
• Configuration: -
• Lens Color: Red
• Lens Transparency: Diffused
• Millicandela Rating: 1.8mcd
• Lens Style/Size: Round with Domed Top, 1.75mm
• Voltage - Forward (Vf) (Typ): 1.6V
• Current - Test: 1mA
• Viewing Angle: 50°
• Mounting Type: Through Hole, Axial
• Wavelength - Dominant: -
• Wavelength - Peak: 660nm
• Features: -
• Package / Case: Axial, Flat Leads
• Supplier Device Package: Subminiature T-3/4
• Size / Dimension: 2.20mm L x 2.10mm W
• Height (Max): 2.92mm

TVS DIODE 100VWM 162VC DO15

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 100V
• Voltage - Breakdown (Min): 111V
• Voltage - Clamping (Max) @ Ipp: 162V
• Current - Peak Pulse (10/1000µs): 3.1A
• Power - Peak Pulse: 500W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-15

IC MOD RF POWER AMP 8PIN 3X3LCC

• Frequency: 1.92GHz ~ 1.98GHz
• P1dB: -
• Gain: 28dB
• Noise Figure: 4dB
• RF Type: W-CDMA
• Voltage - Supply: 3 V ~ 4.2 V
• Current - Supply: 45mA
• Test Frequency: -
• Package / Case: 8-TDFN Exposed Pad
• Supplier Device Package: 8-LCC (3x3)

OPTOISO 2.5KV 2CH TRANS 8DIP

• Number of Channels: 2
• Voltage - Isolation: 2500Vrms
• Current Transfer Ratio (Min): 7% @ 16mA
• Current Transfer Ratio (Max): 50% @ 16mA
• Turn On / Turn Off Time (Typ): 450ns, 500ns
• Rise / Fall Time (Typ): -
• Input Type: DC
• Output Type: Transistor
• Voltage - Output (Max): 20V
• Current - Output / Channel: 8mA
• Voltage - Forward (Vf) (Typ): 1.45V
• Current - DC Forward (If) (Max): 25mA
• Vce Saturation (Max): -
• Operating Temperature: -55°C ~ 100°C
• Mounting Type: Through Hole
• Package / Case: 8-DIP (0.400", 10.16mm)
• Supplier Device Package: 8-DIP

OPTOISOLATOR 5.3KV TRANS 6-DIP

• Number of Channels: 1
• Voltage - Isolation: 5300Vrms
• Current Transfer Ratio (Min): 108% @ 10mA
• Current Transfer Ratio (Max): 173% @ 10mA
• Turn On / Turn Off Time (Typ): 2µs, 3µs
• Rise / Fall Time (Typ): 1µs, 2µs
• Input Type: DC
• Output Type: Transistor
• Voltage - Output (Max): 30V
• Current - Output / Channel: 50mA
• Voltage - Forward (Vf) (Typ): 1.15V
• Current - DC Forward (If) (Max): 100mA
• Vce Saturation (Max): 400mV
• Operating Temperature: -55°C ~ 100°C
• Mounting Type: Through Hole
• Package / Case: 6-DIP (0.300", 7.62mm)
• Supplier Device Package: 6-DIP