Page 54 - GeneSiC Semiconductor Products

MBRH24040R
GeneSiC Semiconductor

DIODE SCHOTTKY 40V 240A D67

Package: D-67

Stock6,944
S300DR
GeneSiC Semiconductor

DIODE GEN REV 200V 300A DO205AB

Package: DO-205AB, DO-9, Stud

Stock3,568
FR70D05
GeneSiC Semiconductor

DIODE GEN PURP 200V 70A DO5

Package: DO-203AB, DO-5, Stud

Stock6,016
1N1188AR
GeneSiC Semiconductor

DIODE GEN PURP REV 400V 40A DO5

Package: DO-203AB, DO-5, Stud

Stock6,656
FR12D02
GeneSiC Semiconductor

DIODE GEN PURP 200V 12A DO4

Package: DO-203AA, DO-4, Stud

Stock3,376
1N1190R
GeneSiC Semiconductor

DIODE GEN PURP REV 600V 35A DO5

Package: DO-203AB, DO-5, Stud

Stock5,920
S16BR
GeneSiC Semiconductor

DIODE GEN REV 100V 16A DO203AA

Package: DO-203AA, DO-4, Stud

Stock5,024
1N3210
GeneSiC Semiconductor

DIODE GEN PURP 200V 15A DO5

Package: DO-203AB, DO-5, Stud

Stock6,564
MURF40010
GeneSiC Semiconductor

DIODE GEN PURP 100V 200A TO244

Package: TO-244AB

Stock4,624
MBRF500200
GeneSiC Semiconductor

DIODE SCHOTTKY 200V 250A TO244AB

Package: TO-244AB

Stock4,544
MBRF12040
GeneSiC Semiconductor

DIODE SCHOTTKY 40V 60A TO244AB

Package: TO-244AB

Stock2,432
MSRTA6001R
GeneSiC Semiconductor

DIODE MODULE 1.6KV 600A 3TOWER

Package: 3-SMD Module

Stock5,200
MUR20020CT
GeneSiC Semiconductor

DIODE MODULE 200V 200A 2TOWER

Package: Twin Tower

Stock3,200
MBR40080CT
GeneSiC Semiconductor

DIODE MODULE 80V 400A 2TOWER

Package: Twin Tower

Stock7,616
MBR30045CTR
GeneSiC Semiconductor

DIODE MODULE 45V 300A 2TOWER

Package: Twin Tower

Stock3,232
MBR120100CT
GeneSiC Semiconductor

DIODE MODULE 100V 120A 2TOWER

Package: Twin Tower

Stock5,456
MBR12020CT
GeneSiC Semiconductor

DIODE MODULE 20V 120A 2TOWER

Package: Twin Tower

Stock7,200
MBRT120100
GeneSiC Semiconductor

DIODE MODULE 100V 120A 3TOWER

Package: Three Tower

Stock3,824
MUR2X060A06
GeneSiC Semiconductor

DIODE GEN PURP 600V 120A SOT227

Package: SOT-227-4, miniBLOC

Stock6,372
GBPC25005W
GeneSiC Semiconductor

DIODE BRIDGE 50V 25A GBPC-W

Package: 4-Square, GBPC-W

Stock4,544

Part Number	Manufacturer	Description	Package	Stock
MBRH24040R	GeneSiC Semiconductor	DIODE SCHOTTKY 40V 240A D67 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 240A Voltage - Forward (Vf) (Max) @ If: 720mV @ 240A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 40V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -55°C ~ 150°C	Package: D-67	Stock6,944
S300DR	GeneSiC Semiconductor	DIODE GEN REV 200V 300A DO205AB Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 300A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 300A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-205AB, DO-9 Operating Temperature - Junction: -60°C ~ 200°C	Package: DO-205AB, DO-9, Stud	Stock3,568
FR70D05	GeneSiC Semiconductor	DIODE GEN PURP 200V 70A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 70A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 70A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 25µA @ 100V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -40°C ~ 125°C	Package: DO-203AB, DO-5, Stud	Stock6,016
1N1188AR	GeneSiC Semiconductor	DIODE GEN PURP REV 400V 40A DO5 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 40A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 200°C	Package: DO-203AB, DO-5, Stud	Stock6,656
FR12D02	GeneSiC Semiconductor	DIODE GEN PURP 200V 12A DO4 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 800mV @ 12A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 25µA @ 100V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 150°C	Package: DO-203AA, DO-4, Stud	Stock3,376
1N1190R	GeneSiC Semiconductor	DIODE GEN PURP REV 600V 35A DO5 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 35A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 35A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 190°C	Package: DO-203AB, DO-5, Stud	Stock5,920
S16BR	GeneSiC Semiconductor	DIODE GEN REV 100V 16A DO203AA Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 16A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-203AA, DO-4, Stud	Stock5,024
1N3210	GeneSiC Semiconductor	DIODE GEN PURP 200V 15A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-203AB, DO-5, Stud	Stock6,564
MURF40010	GeneSiC Semiconductor	DIODE GEN PURP 100V 200A TO244 Diode Configuration: 1 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io) (per Diode): 200A Voltage - Forward (Vf) (Max) @ If: 1V @ 200A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 25µA @ 100V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: TO-244AB Supplier Device Package: TO-244	Package: TO-244AB	Stock4,624
MBRF500200	GeneSiC Semiconductor	DIODE SCHOTTKY 200V 250A TO244AB Diode Configuration: 1 Pair Common Anode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io) (per Diode): 250A Voltage - Forward (Vf) (Max) @ If: 920mV @ 250A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 200V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: TO-244AB Supplier Device Package: TO-244AB	Package: TO-244AB	Stock4,544
MBRF12040	GeneSiC Semiconductor	DIODE SCHOTTKY 40V 60A TO244AB Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io) (per Diode): 60A Voltage - Forward (Vf) (Max) @ If: 700mV @ 60A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 40V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: TO-244AB Supplier Device Package: TO-244AB	Package: TO-244AB	Stock2,432
MSRTA6001R	GeneSiC Semiconductor	DIODE MODULE 1.6KV 600A 3TOWER Diode Configuration: - Diode Type: - Voltage - DC Reverse (Vr) (Max): 1600V Current - Average Rectified (Io) (per Diode): 600A (DC) Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: 3-SMD Module Supplier Device Package: Three Tower	Package: 3-SMD Module	Stock5,200
MUR20020CT	GeneSiC Semiconductor	DIODE MODULE 200V 200A 2TOWER Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io) (per Diode): 200A (DC) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 25µA @ 50V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Twin Tower Supplier Device Package: Twin Tower	Package: Twin Tower	Stock3,200
MBR40080CT	GeneSiC Semiconductor	DIODE MODULE 80V 400A 2TOWER Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io) (per Diode): 400A (DC) Voltage - Forward (Vf) (Max) @ If: 840mV @ 200A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5mA @ 20V Operating Temperature - Junction: - Mounting Type: Chassis Mount Package / Case: Twin Tower Supplier Device Package: Twin Tower	Package: Twin Tower	Stock7,616
MBR30045CTR	GeneSiC Semiconductor	DIODE MODULE 45V 300A 2TOWER Diode Configuration: 1 Pair Common Anode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io) (per Diode): 300A (DC) Voltage - Forward (Vf) (Max) @ If: 650mV @ 150A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 8mA @ 20V Operating Temperature - Junction: - Mounting Type: Chassis Mount Package / Case: Twin Tower Supplier Device Package: Twin Tower	Package: Twin Tower	Stock3,232
MBR120100CT	GeneSiC Semiconductor	DIODE MODULE 100V 120A 2TOWER Diode Configuration: 1 Pair Common Anode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io) (per Diode): 120A (DC) Voltage - Forward (Vf) (Max) @ If: 840mV @ 60A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 20V Operating Temperature - Junction: - Mounting Type: Chassis Mount Package / Case: Twin Tower Supplier Device Package: Twin Tower	Package: Twin Tower	Stock5,456
MBR12020CT	GeneSiC Semiconductor	DIODE MODULE 20V 120A 2TOWER Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io) (per Diode): 120A (DC) Voltage - Forward (Vf) (Max) @ If: 650mV @ 120A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 20V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Twin Tower Supplier Device Package: Twin Tower	Package: Twin Tower	Stock7,200
MBRT120100	GeneSiC Semiconductor	DIODE MODULE 100V 120A 3TOWER Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io) (per Diode): 120A (DC) Voltage - Forward (Vf) (Max) @ If: 880mV @ 60A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 20V Operating Temperature - Junction: - Mounting Type: Chassis Mount Package / Case: Three Tower Supplier Device Package: Three Tower	Package: Three Tower	Stock3,824
MUR2X060A06	GeneSiC Semiconductor	DIODE GEN PURP 600V 120A SOT227 Diode Configuration: 2 Independent Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io) (per Diode): 120A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 60A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90ns Current - Reverse Leakage @ Vr: 25µA @ 600V Operating Temperature - Junction: -55°C ~ 175°C Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227	Package: SOT-227-4, miniBLOC	Stock6,372
GBPC25005W	GeneSiC Semiconductor	DIODE BRIDGE 50V 25A GBPC-W Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 50V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 7.5A Current - Reverse Leakage @ Vr: 5µA @ 50V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-Square, GBPC-W Supplier Device Package: GBPC-W	Package: 4-Square, GBPC-W	Stock4,544
GBPC2502T	GeneSiC Semiconductor	DIODE BRIDGE 200V 25A GBPC-T/W Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 200V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A Current - Reverse Leakage @ Vr: 5µA @ 200V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: QC Terminal Package / Case: 4-Square, GBPC Supplier Device Package: GBPC	Package: 4-Square, GBPC	Stock5,136
GBPC1508T	GeneSiC Semiconductor	DIODE BRIDGE 800V 15A GBPC-T/W Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 7.5A Current - Reverse Leakage @ Vr: 5µA @ 800V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: QC Terminal Package / Case: 4-Square, GBPC Supplier Device Package: GBPC	Package: 4-Square, GBPC	Stock2,048
KBPC1510W	GeneSiC Semiconductor	DIODE BRIDGE 15A 1000V 1PH KBPCW Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1000V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 7.5A Current - Reverse Leakage @ Vr: 5µA @ 1000V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: 4-Square, KBPC-W Supplier Device Package: KBPC-W	Package: 4-Square, KBPC-W	Stock4,544
BR88	GeneSiC Semiconductor	DIODE BRIDGE 800V 8A BR-8 Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A Current - Reverse Leakage @ Vr: 10µA @ 600V Operating Temperature: -65°C ~ 125°C (TJ) Mounting Type: Through Hole Package / Case: 4-Square, BR-8 Supplier Device Package: BR-8	Package: 4-Square, BR-8	Stock7,056
BR1005	GeneSiC Semiconductor	DIODE BRIDGE 50V 10A BR-10 Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 50V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A Current - Reverse Leakage @ Vr: 10µA @ 50V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-Square, BR-10 Supplier Device Package: BR-10	Package: 4-Square, BR-10	Stock2,384
KBL608G	GeneSiC Semiconductor	DIODE BRIDGE 800V 6A KBL Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 6A Current - Reverse Leakage @ Vr: 5µA @ 800V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, KBL Supplier Device Package: KBL	Package: 4-SIP, KBL	Stock4,960
KBL402G	GeneSiC Semiconductor	DIODE BRIDGE 100V 4A KBL Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 100V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A Current - Reverse Leakage @ Vr: 5µA @ 100V Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, KBL Supplier Device Package: KBL	Package: 4-SIP, KBL	Stock5,040
KBU6M	GeneSiC Semiconductor	DIODE BRIDGE 1000V 6A KBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1000V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1V @ 6A Current - Reverse Leakage @ Vr: 10µA @ 1000V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, KBU Supplier Device Package: KBU	Package: 4-SIP, KBU	Stock16,944