|
|
GeneSiC Semiconductor |
DIODE FAST REC 400V 70A D67
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 70A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 70A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 90ns
- Current - Reverse Leakage @ Vr: 25µA @ 400V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: D-67
- Supplier Device Package: D-67
- Operating Temperature - Junction: -55°C ~ 155°C
|
Package: D-67 |
Stock4,944 |
|
|
|
GeneSiC Semiconductor |
DIODE MODULE 35V 120A D-67
- Diode Type: Schottky, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 35V
- Current - Average Rectified (Io): 120A
- Voltage - Forward (Vf) (Max) @ If: 650mV @ 120A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 4mA @ 20V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: D-67
- Supplier Device Package: D-67
- Operating Temperature - Junction: -
|
Package: D-67 |
Stock7,808 |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP REV 1.4KV DO205AA
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 1400V
- Current - Average Rectified (Io): 100A
- Voltage - Forward (Vf) (Max) @ If: 1.5V @ 100A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 7mA @ 1400V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-205AA, DO-8, Stud
- Supplier Device Package: DO-205AA (DO-8)
- Operating Temperature - Junction: -40°C ~ 200°C
|
Package: DO-205AA, DO-8, Stud |
Stock7,504 |
|
|
|
GeneSiC Semiconductor |
DIODE SCHOTTKY REV 40V DO5
- Diode Type: Schottky, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 60A
- Voltage - Forward (Vf) (Max) @ If: 650mV @ 60A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5mA @ 20V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-5
- Operating Temperature - Junction: -65°C ~ 150°C
|
Package: DO-203AB, DO-5, Stud |
Stock5,184 |
|
|
|
GeneSiC Semiconductor |
DIODE SCHOTTKY REV 30V DO4
- Diode Type: Schottky, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 35A
- Voltage - Forward (Vf) (Max) @ If: 680mV @ 35A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1.5mA @ 20V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AA, DO-4, Stud
- Supplier Device Package: DO-4
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: DO-203AA, DO-4, Stud |
Stock6,160 |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 400V 85A DO5
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 85A
- Voltage - Forward (Vf) (Max) @ If: 1.4V @ 85A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 500ns
- Current - Reverse Leakage @ Vr: 25µA @ 100V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-5
- Operating Temperature - Junction: -40°C ~ 125°C
|
Package: DO-203AB, DO-5, Stud |
Stock4,144 |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 600V 70A DO5
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 70A
- Voltage - Forward (Vf) (Max) @ If: 1.4V @ 70A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 250ns
- Current - Reverse Leakage @ Vr: 25µA @ 100V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-5
- Operating Temperature - Junction: -40°C ~ 125°C
|
Package: DO-203AB, DO-5, Stud |
Stock6,080 |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP REV 100V 70A DO5
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 70A
- Voltage - Forward (Vf) (Max) @ If: 1.4V @ 70A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 200ns
- Current - Reverse Leakage @ Vr: 25µA @ 100V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-5
- Operating Temperature - Junction: -40°C ~ 125°C
|
Package: DO-203AB, DO-5, Stud |
Stock2,160 |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 50V 40A DO203AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 40A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 40A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 50V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-203AB
- Operating Temperature - Junction: -65°C ~ 200°C
|
Package: DO-203AB, DO-5, Stud |
Stock4,512 |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP REV 600V 35A DO5
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 35A
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 35A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 50V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-5
- Operating Temperature - Junction: -65°C ~ 190°C
|
Package: DO-203AB, DO-5, Stud |
Stock5,680 |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 1.6KV 25A DO4
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1600V
- Current - Average Rectified (Io): 25A
- Voltage - Forward (Vf) (Max) @ If: 1.55V @ 60A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 4mA @ 1600V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AA, DO-4, Stud
- Supplier Device Package: DO-4
- Operating Temperature - Junction: -40°C ~ 180°C
|
Package: DO-203AA, DO-4, Stud |
Stock5,488 |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 1.6KV 95A DO5
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1600V
- Current - Average Rectified (Io): 95A
- Voltage - Forward (Vf) (Max) @ If: 1.5V @ 60A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10mA @ 1600V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-5
- Operating Temperature - Junction: -40°C ~ 180°C
|
Package: DO-203AB, DO-5, Stud |
Stock5,840 |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 1.2KV 95A DO5
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 95A
- Voltage - Forward (Vf) (Max) @ If: 1.5V @ 60A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10mA @ 1200V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-5
- Operating Temperature - Junction: -40°C ~ 180°C
|
Package: DO-203AB, DO-5, Stud |
Stock3,280 |
|
|
|
GeneSiC Semiconductor |
DIODE SCHOTTKY 35V 400A 3TOWER
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 35V
- Current - Average Rectified (Io) (per Diode): 400A
- Voltage - Forward (Vf) (Max) @ If: 720mV @ 400A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 35V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
|
Package: Three Tower |
Stock2,960 |
|
|
|
GeneSiC Semiconductor |
DIODE SCHOTTKY 30V 300A 3TOWER
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io) (per Diode): 300A
- Voltage - Forward (Vf) (Max) @ If: 580mV @ 300A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 30V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
|
Package: Three Tower |
Stock2,176 |
|
|
|
GeneSiC Semiconductor |
DIODE SCHOTTKY 60V 200A TO244AB
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io) (per Diode): 200A
- Voltage - Forward (Vf) (Max) @ If: 750mV @ 200A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 60V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: TO-244AB
- Supplier Device Package: TO-244AB
|
Package: TO-244AB |
Stock6,464 |
|
|
|
GeneSiC Semiconductor |
DIODE SCHOTTKY 80V 150A TO244AB
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 80V
- Current - Average Rectified (Io) (per Diode): 150A
- Voltage - Forward (Vf) (Max) @ If: 840mV @ 150A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 80V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: TO-244AB
- Supplier Device Package: TO-244AB
|
Package: TO-244AB |
Stock5,744 |
|
|
|
GeneSiC Semiconductor |
DIODE SCHOTTKY 60V 150A TO244AB
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io) (per Diode): 150A
- Voltage - Forward (Vf) (Max) @ If: 750mV @ 150A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 60V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: TO-244AB
- Supplier Device Package: TO-244AB
|
Package: TO-244AB |
Stock4,544 |
|
|
|
GeneSiC Semiconductor |
DIODE SCHOTTKY 200V 300A 3 TOWER
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io) (per Diode): 300A
- Voltage - Forward (Vf) (Max) @ If: 920mV @ 300A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 200V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
|
Package: Three Tower |
Stock2,064 |
|
|
|
GeneSiC Semiconductor |
DIODE MODULE 1.2KV 400A 3TOWER
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io) (per Diode): 400A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 400A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 25µA @ 600V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
|
Package: Three Tower |
Stock6,496 |
|
|
|
GeneSiC Semiconductor |
DIODE MODULE 200V 200A TO244
- Diode Configuration: 1 Pair Common Anode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io) (per Diode): 200A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 75ns
- Current - Reverse Leakage @ Vr: 25µA @ 50V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: TO-244AB
- Supplier Device Package: TO-244
|
Package: TO-244AB |
Stock6,576 |
|
|
|
GeneSiC Semiconductor |
DIODE MODULE 80V 300A 3TOWER
- Diode Configuration: 1 Pair Common Anode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 80V
- Current - Average Rectified (Io) (per Diode): 300A (DC)
- Voltage - Forward (Vf) (Max) @ If: 880mV @ 150A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 20V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
|
Package: Three Tower |
Stock5,360 |
|
|
|
GeneSiC Semiconductor |
DIODE MODULE 1.2KV 250A 3TOWER
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io) (per Diode): 250A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 250A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 15µA @ 600V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
|
Package: Three Tower |
Stock2,128 |
|
|
|
GeneSiC Semiconductor |
DIODE STD REC 800V 75A 3PH
- Diode Type: Three Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 800V
- Current - Average Rectified (Io): 75A
- Voltage - Forward (Vf) (Max) @ If: -
- Current - Reverse Leakage @ Vr: 10µA @ 800V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: 5-SMD Module
- Supplier Device Package: 5-SMD
|
Package: 5-SMD Module |
Stock7,616 |
|
|
|
GeneSiC Semiconductor |
DIODE BRIDGE 50V 15A GBPC-W
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 50V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 7.5A
- Current - Reverse Leakage @ Vr: 5µA @ 50V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-Square, GBPC-W
- Supplier Device Package: GBPC-W
|
Package: 4-Square, GBPC-W |
Stock5,424 |
|
|
|
GeneSiC Semiconductor |
DIODE BRIDGE 50V 2A KBP
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 50V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
- Current - Reverse Leakage @ Vr: 10µA @ 50V
- Operating Temperature: -50°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, KBP
- Supplier Device Package: KBP
|
Package: 4-SIP, KBP |
Stock6,944 |
|
|
|
GeneSiC Semiconductor |
DIODE MODULE GP 1.2KV 3TOWER
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io) (per Diode): 200A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
|
Package: - |
Request a Quote |
|
|
|
GeneSiC Semiconductor |
DIODE MODULE GP 800V 400A 3TOWER
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800 V
- Current - Average Rectified (Io) (per Diode): 400A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 400 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 25 µA @ 600 V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
|
Package: - |
Request a Quote |
|