|
|
Infineon Technologies |
DIODE MOD GP 4500V AIHV130-4
- Diode Configuration: 2 Independent
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 4500 V
- Current - Average Rectified (Io) (per Diode): -
- Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 1200 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Operating Temperature - Junction: -50°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: A-IHV130-4
|
Package: - |
Stock6 |
|
Standard | 4500 V | - | 3.1 V @ 1200 A | Standard Recovery >500ns, > 200mA (Io) | - | - | -50°C ~ 125°C | Chassis Mount | Module | A-IHV130-4 |
|
|
Infineon Technologies |
DIODE MOD GP 1800V 226A BGPB34SB
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1800 V
- Current - Average Rectified (Io) (per Diode): 226A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1 mA @ 1800 V
- Operating Temperature - Junction: -40°C ~ 135°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: BG-PB34SB-1
|
Package: - |
Request a Quote |
|
Standard | 1800 V | 226A | - | Standard Recovery >500ns, > 200mA (Io) | - | 1 mA @ 1800 V | -40°C ~ 135°C | Chassis Mount | Module | BG-PB34SB-1 |
|
|
Infineon Technologies |
DIODE SCHOTTKY
- Diode Configuration: -
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io) (per Diode): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Operating Temperature - Junction: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - |
|
|
Infineon Technologies |
DIODE MOD GP 1600V BGPB60E2A-1
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1600 V
- Current - Average Rectified (Io) (per Diode): 600A
- Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 1.8 kA
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 40 mA @ 1.6 kV
- Operating Temperature - Junction: 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: BG-PB60E2A-1
|
Package: - |
Request a Quote |
|
Standard | 1600 V | 600A | 1.32 V @ 1.8 kA | Standard Recovery >500ns, > 200mA (Io) | - | 40 mA @ 1.6 kV | 150°C | Chassis Mount | Module | BG-PB60E2A-1 |
|
|
Infineon Technologies |
DIODE MODULE GP 3200V 223A
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 3200 V
- Current - Average Rectified (Io) (per Diode): 223A
- Voltage - Forward (Vf) (Max) @ If: 2.05 V @ 600 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 20 mA @ 3200 V
- Operating Temperature - Junction: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
|
Package: - |
Request a Quote |
|
Standard | 3200 V | 223A | 2.05 V @ 600 A | Standard Recovery >500ns, > 200mA (Io) | - | 20 mA @ 3200 V | -40°C ~ 150°C | Chassis Mount | Module | Module |
|
|
Infineon Technologies |
DIODE MOD GP 1600V 89A POWRBLOK
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1600 V
- Current - Average Rectified (Io) (per Diode): 89A
- Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 300 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 20 mA @ 1600 V
- Operating Temperature - Junction: 150°C
- Mounting Type: Chassis Mount
- Package / Case: POW-R-BLOK™ Module
- Supplier Device Package: POW-R-BLOK™ Module
|
Package: - |
Request a Quote |
|
Standard | 1600 V | 89A | 1.5 V @ 300 A | Standard Recovery >500ns, > 200mA (Io) | - | 20 mA @ 1600 V | 150°C | Chassis Mount | POW-R-BLOK™ Module | POW-R-BLOK™ Module |
|
|
Infineon Technologies |
DIODE MODULE GP 400V 285A
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io) (per Diode): 285A
- Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 800 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 20 mA @ 400 V
- Operating Temperature - Junction: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
|
Package: - |
Request a Quote |
|
Standard | 400 V | 285A | 1.15 V @ 800 A | Standard Recovery >500ns, > 200mA (Io) | - | 20 mA @ 400 V | -40°C ~ 150°C | Chassis Mount | Module | Module |
|
|
Infineon Technologies |
DIODE MODULE GP 1.2KV 350A
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io) (per Diode): 350A
- Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 1000 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 30 mA @ 1200 V
- Operating Temperature - Junction: 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
|
Package: - |
Request a Quote |
|
Standard | 1200 V | 350A | 1.28 V @ 1000 A | Standard Recovery >500ns, > 200mA (Io) | - | 30 mA @ 1200 V | 150°C | Chassis Mount | Module | Module |
|
|
Infineon Technologies |
DIODE ARR SCHOTT 40V 120MA SOT23
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io) (per Diode): 120mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 1 µA @ 30 V
- Operating Temperature - Junction: 150°C
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23
|
Package: - |
Request a Quote |
|
Schottky | 40 V | 120mA (DC) | 1 V @ 40 mA | No Recovery Time > 500mA (Io) | 0 ns | 1 µA @ 30 V | 150°C | Surface Mount | TO-236-3, SC-59, SOT-23-3 | PG-SOT23 |
|
|
Infineon Technologies |
DIODE MODULE GP 1800V 260A
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1800 V
- Current - Average Rectified (Io) (per Diode): 260A
- Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 800 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 30 mA @ 1800 V
- Operating Temperature - Junction: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
|
Package: - |
Request a Quote |
|
Standard | 1800 V | 260A | 1.32 V @ 800 A | Standard Recovery >500ns, > 200mA (Io) | - | 30 mA @ 1800 V | -40°C ~ 150°C | Chassis Mount | Module | Module |
|
|
Infineon Technologies |
DIODE MODULE GP 2600V 540A
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 2600 V
- Current - Average Rectified (Io) (per Diode): 540A
- Voltage - Forward (Vf) (Max) @ If: 1.48 V @ 1700 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 40 mA @ 2600 V
- Operating Temperature - Junction: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
|
Package: - |
Request a Quote |
|
Standard | 2600 V | 540A | 1.48 V @ 1700 A | Standard Recovery >500ns, > 200mA (Io) | - | 40 mA @ 2600 V | -40°C ~ 150°C | Chassis Mount | Module | Module |
|
|
Infineon Technologies |
DIODE MODULE GP 1.6KV 350A
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1600 V
- Current - Average Rectified (Io) (per Diode): 350A
- Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 1000 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 30 mA @ 1600 V
- Operating Temperature - Junction: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
|
Package: - |
Stock12 |
|
Standard | 1600 V | 350A | 1.28 V @ 1000 A | Standard Recovery >500ns, > 200mA (Io) | - | 30 mA @ 1600 V | -40°C ~ 150°C | Chassis Mount | Module | Module |
|
|
Infineon Technologies |
DIODE MODULE GP 1600V
- Diode Configuration: 3 Independent
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1600 V
- Current - Average Rectified (Io) (per Diode): -
- Voltage - Forward (Vf) (Max) @ If: 1.61 V @ 300 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10 mA @ 1600 V
- Operating Temperature - Junction: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
|
Package: - |
Stock3 |
|
Standard | 1600 V | - | 1.61 V @ 300 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 mA @ 1600 V | -40°C ~ 150°C | Chassis Mount | Module | Module |
|
|
Infineon Technologies |
DIODE MODULE GP 1.4KV 261A
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1400 V
- Current - Average Rectified (Io) (per Diode): 261A
- Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 800 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200 mA @ 1400 V
- Operating Temperature - Junction: 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
|
Package: - |
Request a Quote |
|
Standard | 1400 V | 261A | 1.55 V @ 800 A | Standard Recovery >500ns, > 200mA (Io) | - | 200 mA @ 1400 V | 150°C | Chassis Mount | Module | Module |
|
|
Infineon Technologies |
DIODE MODULE GP 1KV 261A
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000 V
- Current - Average Rectified (Io) (per Diode): 261A
- Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 800 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200 mA @ 1000 V
- Operating Temperature - Junction: 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
|
Package: - |
Request a Quote |
|
Standard | 1000 V | 261A | 1.55 V @ 800 A | Standard Recovery >500ns, > 200mA (Io) | - | 200 mA @ 1000 V | 150°C | Chassis Mount | Module | Module |
|
|
Infineon Technologies |
DIODE MOD GP 3300V AGIHVB130-3
- Diode Configuration: 2 Independent
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 3300 V
- Current - Average Rectified (Io) (per Diode): 1000A (DC)
- Voltage - Forward (Vf) (Max) @ If: 3.85 V @ 1000 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Operating Temperature - Junction: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-IHVB130-3
|
Package: - |
Request a Quote |
|
Standard | 3300 V | 1000A (DC) | 3.85 V @ 1000 A | Standard Recovery >500ns, > 200mA (Io) | - | - | -40°C ~ 150°C | Chassis Mount | Module | AG-IHVB130-3 |
|
|
Infineon Technologies |
DIODE MODULE GP 1.2KV 171A
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io) (per Diode): 171A
- Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 500 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 20 mA @ 1200 V
- Operating Temperature - Junction: 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
|
Package: - |
Request a Quote |
|
Standard | 1200 V | 171A | 1.26 V @ 500 A | Standard Recovery >500ns, > 200mA (Io) | - | 20 mA @ 1200 V | 150°C | Chassis Mount | Module | Module |
|
|
Infineon Technologies |
DIODE MODULE GP 1200V 171A
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io) (per Diode): 171A
- Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 500 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 20 mA @ 1200 V
- Operating Temperature - Junction: 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
|
Package: - |
Stock18 |
|
Standard | 1200 V | 171A | 1.26 V @ 500 A | Standard Recovery >500ns, > 200mA (Io) | - | 20 mA @ 1200 V | 150°C | Chassis Mount | Module | - |
|
|
Infineon Technologies |
DIODE MOD GP 2200V BGPB50SB
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 2200 V
- Current - Average Rectified (Io) (per Diode): 390A
- Voltage - Forward (Vf) (Max) @ If: 1.34 V @ 800 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1 mA @ 2200 V
- Operating Temperature - Junction: -40°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: BG-PB50SB-1
|
Package: - |
Stock3 |
|
Standard | 2200 V | 390A | 1.34 V @ 800 A | Standard Recovery >500ns, > 200mA (Io) | - | 1 mA @ 2200 V | -40°C ~ 125°C | Chassis Mount | Module | BG-PB50SB-1 |
|
|
Infineon Technologies |
DIODE MODULE GP 1.6KV 330A
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1600 V
- Current - Average Rectified (Io) (per Diode): 330A
- Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 1600 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1 mA @ 1600 V
- Operating Temperature - Junction: -40°C ~ 130°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
|
Package: - |
Request a Quote |
|
Standard | 1600 V | 330A | 1.31 V @ 1600 A | Standard Recovery >500ns, > 200mA (Io) | - | 1 mA @ 1600 V | -40°C ~ 130°C | Chassis Mount | Module | Module |
|
|
Infineon Technologies |
DIODE MOD GP 6500V 250A AIHV130
- Diode Configuration: 2 Independent
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 6500 V
- Current - Average Rectified (Io) (per Diode): 250A (DC)
- Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 250 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Operating Temperature - Junction: -50°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: A-IHV130-6
|
Package: - |
Request a Quote |
|
Standard | 6500 V | 250A (DC) | 3.5 V @ 250 A | Standard Recovery >500ns, > 200mA (Io) | - | - | -50°C ~ 125°C | Chassis Mount | Module | A-IHV130-6 |
|
|
Infineon Technologies |
DIODE MODULE GP 3300V AIHV73-3
- Diode Configuration: -
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 3300 V
- Current - Average Rectified (Io) (per Diode): -
- Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 200 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Operating Temperature - Junction: -40°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: A-IHV73-3
|
Package: - |
Request a Quote |
|
Standard | 3300 V | - | 3.5 V @ 200 A | Standard Recovery >500ns, > 200mA (Io) | - | - | -40°C ~ 125°C | Chassis Mount | Module | A-IHV73-3 |
|
|
Infineon Technologies |
DIODE MOD GP 1200V 104A POWRBLOK
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io) (per Diode): 104A
- Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 300 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 20 mA @ 1200 V
- Operating Temperature - Junction: 150°C
- Mounting Type: Chassis Mount
- Package / Case: POW-R-BLOK™ Module
- Supplier Device Package: POW-R-BLOK™ Module
|
Package: - |
Request a Quote |
|
Standard | 1200 V | 104A | 1.4 V @ 300 A | Standard Recovery >500ns, > 200mA (Io) | - | 20 mA @ 1200 V | 150°C | Chassis Mount | POW-R-BLOK™ Module | POW-R-BLOK™ Module |
|
|
Infineon Technologies |
DIODE MODULE GP 1.4KV 171A
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1400 V
- Current - Average Rectified (Io) (per Diode): 171A
- Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 500 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 20 mA @ 1400 V
- Operating Temperature - Junction: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
|
Package: - |
Request a Quote |
|
Standard | 1400 V | 171A | 1.26 V @ 500 A | Standard Recovery >500ns, > 200mA (Io) | - | 20 mA @ 1400 V | -40°C ~ 150°C | Chassis Mount | Module | Module |
|
|
Infineon Technologies |
DIODE MODULE GP 4500V 800A
- Diode Configuration: 2 Independent
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 4500 V
- Current - Average Rectified (Io) (per Diode): 800A (DC)
- Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 800 A
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Operating Temperature - Junction: -50°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
|
Package: - |
Stock6 |
|
Standard | 4500 V | 800A (DC) | 3.1 V @ 800 A | - | - | - | -50°C ~ 125°C | Chassis Mount | Module | Module |
|
|
Infineon Technologies |
DIODE MODULE GP 1.2KV 600A
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io) (per Diode): 600A
- Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 1800 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 40 mA @ 1200 V
- Operating Temperature - Junction: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
|
Package: - |
Request a Quote |
|
Standard | 1200 V | 600A | 1.32 V @ 1800 A | Standard Recovery >500ns, > 200mA (Io) | - | 40 mA @ 1200 V | -40°C ~ 150°C | Chassis Mount | Module | Module |
|
|
Infineon Technologies |
DIODE ARRAY GP 80V 200MA
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 80 V
- Current - Average Rectified (Io) (per Diode): 200mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 4 ns
- Current - Reverse Leakage @ Vr: 150 nA @ 70 V
- Operating Temperature - Junction: 150°C
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: -
|
Package: - |
Request a Quote |
|
Standard | 80 V | 200mA (DC) | 1.25 V @ 150 mA | Small Signal =< 200mA (Io), Any Speed | 4 ns | 150 nA @ 70 V | 150°C | Surface Mount | TO-236-3, SC-59, SOT-23-3 | - |
|
|
Infineon Technologies |
DIODE MOD GP 1600V 600A BGPB60-1
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1600 V
- Current - Average Rectified (Io) (per Diode): 600A
- Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 1800 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 40 mA @ 1600 V
- Operating Temperature - Junction: 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: BG-PB60-1
|
Package: - |
Request a Quote |
|
Standard | 1600 V | 600A | 1.32 V @ 1800 A | Standard Recovery >500ns, > 200mA (Io) | - | 40 mA @ 1600 V | 150°C | Chassis Mount | Module | BG-PB60-1 |