Page 19 - Infineon Technologies Products - Diodes - Rectifiers - Single

IDH04G65C6XKSA1
Infineon Technologies

SIC DIODES

Package: -

Stock3,552
IDK04G65C5XTMA2
Infineon Technologies

DIODE SCHOTTKY 650V 4A TO263-2

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,808
IDP18E120XKSA1
Infineon Technologies

DIODE GEN PURP 1.2KV 31A TO220-2

Package: TO-220-2

Stock4,960
IDK03G65C5XTMA2
Infineon Technologies

DIODE SCHOTTKY 650V 3A TO263-2

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,136
IDW30E60FKSA1
Infineon Technologies

DIODE GEN PURP 600V 60A TO247-3

Package: TO-247-3

Stock5,856
IDB30E60ATMA1
Infineon Technologies

DIODE GEN PURP 600V 52.3A TO263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,528
IDP30E60XKSA1
Infineon Technologies

DIODE GEN PURP 600V 52.3A TO220

Package: TO-220-2

Stock7,312
IDP30E65D2XKSA1
Infineon Technologies

DIODE GEN PURP 650V 60A TO220-2

Package: TO-220-2

Stock3,296
IDK02G65C5XTMA2
Infineon Technologies

DIODE SCHOTTKY 650V 2A TO263-2

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,944
IDB15E60ATMA1
Infineon Technologies

DIODE GEN PURP 600V 29.2A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,360
IDP12E120XKSA1
Infineon Technologies

DIODE GEN PURP 1.2KV 28A TO220-2

Package: TO-220-2

Stock3,600
IDP15E60XKSA1
Infineon Technologies

DIODE GEN PURP 600V 29.2A TO220

Package: TO-220-2

Stock4,048
IDP20E65D2XKSA1
Infineon Technologies

DIODE GEN PURP 650V 40A TO220-2

Package: TO-220-2

Stock2,336
BAT2402ELSE6327XTSA1
Infineon Technologies

DIODE SCHOTTKY 4V 110MA SC79-2

Package: 2-XFDFN

Stock3,232
IDD15E60BUMA2
Infineon Technologies

DIODE GEN PURP 600V 29.2A TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,648
IDD09E60BUMA1
Infineon Technologies

DIODE GEN PURP 600V 19.3A TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,064
IDD06E60BUMA1
Infineon Technologies

DIODE GEN PURP 600V 14.7A TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,488
BAT1502LSE6433XTMA1
Infineon Technologies

DIODE SCHOTTKY 4V 110MA TSSLP-2

Package: 2-XFDFN

Stock3,488
BAT1502ELE6327XTMA1
Infineon Technologies

DIODE SCHOTTKY 4V 110MA TSLP-2

Package: 2-XDFN

Stock3,328
BAW78DH6327XTSA1
Infineon Technologies

DIODE GP 400V 1A SOT89

Package: TO-243AA

Stock5,488

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
IDH04G65C6XKSA1	Infineon Technologies	SIC DIODES Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Stock3,552	-	-	-	-	-	-	-	-	-	-	-
IDK04G65C5XTMA2	Infineon Technologies	DIODE SCHOTTKY 650V 4A TO263-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 4A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 4A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 670µA @ 650V Capacitance @ Vr, F: 130pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-2 Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,808	650V	4A (DC)	1.8V @ 4A	No Recovery Time > 500mA (Io)	0ns	670µA @ 650V	130pF @ 1V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	PG-TO263-2	-55°C ~ 175°C
IDP18E120XKSA1	Infineon Technologies	DIODE GEN PURP 1.2KV 31A TO220-2 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 31A (DC) Voltage - Forward (Vf) (Max) @ If: 2.15V @ 18A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 195ns Current - Reverse Leakage @ Vr: 100µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: PG-TO220-2 Operating Temperature - Junction: -55°C ~ 150°C	Package: TO-220-2	Stock4,960	1200V	31A (DC)	2.15V @ 18A	Fast Recovery =< 500ns, > 200mA (Io)	195ns	100µA @ 1200V	-	Through Hole	TO-220-2	PG-TO220-2	-55°C ~ 150°C
IDK03G65C5XTMA2	Infineon Technologies	DIODE SCHOTTKY 650V 3A TO263-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 3A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 3A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 500µA @ 650V Capacitance @ Vr, F: 100pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-2 Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,136	650V	3A (DC)	1.8V @ 3A	No Recovery Time > 500mA (Io)	0ns	500µA @ 650V	100pF @ 1V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	PG-TO263-2	-55°C ~ 175°C
IDW30E60FKSA1	Infineon Technologies	DIODE GEN PURP 600V 60A TO247-3 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 60A (DC) Voltage - Forward (Vf) (Max) @ If: 2V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 143ns Current - Reverse Leakage @ Vr: 40µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3 Operating Temperature - Junction: -40°C ~ 175°C	Package: TO-247-3	Stock5,856	600V	60A (DC)	2V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	143ns	40µA @ 600V	-	Through Hole	TO-247-3	TO-247-3	-40°C ~ 175°C
IDB30E60ATMA1	Infineon Technologies	DIODE GEN PURP 600V 52.3A TO263 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 52.3A (DC) Voltage - Forward (Vf) (Max) @ If: 2V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 126ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-3-2 Operating Temperature - Junction: -40°C ~ 175°C	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,528	600V	52.3A (DC)	2V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	126ns	50µA @ 600V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	PG-TO263-3-2	-40°C ~ 175°C
IDP30E60XKSA1	Infineon Technologies	DIODE GEN PURP 600V 52.3A TO220 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 52.3A (DC) Voltage - Forward (Vf) (Max) @ If: 2V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 126ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: PG-TO220-2 Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-220-2	Stock7,312	600V	52.3A (DC)	2V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	126ns	50µA @ 600V	-	Through Hole	TO-220-2	PG-TO220-2	-55°C ~ 175°C
IDP30E65D2XKSA1	Infineon Technologies	DIODE GEN PURP 650V 60A TO220-2 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 60A (DC) Voltage - Forward (Vf) (Max) @ If: 2.2V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 42ns Current - Reverse Leakage @ Vr: 40µA @ 650V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: PG-TO220-2-1 Operating Temperature - Junction: -40°C ~ 175°C	Package: TO-220-2	Stock3,296	650V	60A (DC)	2.2V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	42ns	40µA @ 650V	-	Through Hole	TO-220-2	PG-TO220-2-1	-40°C ~ 175°C
IDK02G65C5XTMA2	Infineon Technologies	DIODE SCHOTTKY 650V 2A TO263-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 2A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 2A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 330µA @ 650V Capacitance @ Vr, F: 70pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-2 Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,944	650V	2A (DC)	1.8V @ 2A	No Recovery Time > 500mA (Io)	0ns	330µA @ 650V	70pF @ 1V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	PG-TO263-2	-55°C ~ 175°C
IDB15E60ATMA1	Infineon Technologies	DIODE GEN PURP 600V 29.2A D2PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 29.2A (DC) Voltage - Forward (Vf) (Max) @ If: 2V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 87ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-3 Operating Temperature - Junction: -40°C ~ 175°C	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,360	600V	29.2A (DC)	2V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	87ns	50µA @ 600V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	PG-TO263-3	-40°C ~ 175°C
IDP12E120XKSA1	Infineon Technologies	DIODE GEN PURP 1.2KV 28A TO220-2 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 28A (DC) Voltage - Forward (Vf) (Max) @ If: 2.15V @ 12A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 100µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: PG-TO220-2 Operating Temperature - Junction: -55°C ~ 150°C	Package: TO-220-2	Stock3,600	1200V	28A (DC)	2.15V @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	100µA @ 1200V	-	Through Hole	TO-220-2	PG-TO220-2	-55°C ~ 150°C
IDP15E60XKSA1	Infineon Technologies	DIODE GEN PURP 600V 29.2A TO220 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 29.2A (DC) Voltage - Forward (Vf) (Max) @ If: 2V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 87ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: PG-TO220-2 Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-220-2	Stock4,048	600V	29.2A (DC)	2V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	87ns	50µA @ 600V	-	Through Hole	TO-220-2	PG-TO220-2	-55°C ~ 175°C
IDP20E65D2XKSA1	Infineon Technologies	DIODE GEN PURP 650V 40A TO220-2 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 40A (DC) Voltage - Forward (Vf) (Max) @ If: 2.2V @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 32ns Current - Reverse Leakage @ Vr: 40µA @ 650V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: PG-TO220-2-1 Operating Temperature - Junction: -40°C ~ 175°C	Package: TO-220-2	Stock2,336	650V	40A (DC)	2.2V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	32ns	40µA @ 650V	-	Through Hole	TO-220-2	PG-TO220-2-1	-40°C ~ 175°C
BAT2402ELSE6327XTSA1	Infineon Technologies	DIODE SCHOTTKY 4V 110MA SC79-2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 4V Current - Average Rectified (Io): 110mA (DC) Voltage - Forward (Vf) (Max) @ If: 410mV @ 10mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 1V Capacitance @ Vr, F: 230pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 2-XFDFN Supplier Device Package: PG-TSSLP-2-1 Operating Temperature - Junction: -55°C ~ 150°C	Package: 2-XFDFN	Stock3,232	4V	110mA (DC)	410mV @ 10mA	Small Signal =< 200mA (Io), Any Speed	-	5µA @ 1V	230pF @ 0V, 1MHz	Surface Mount	2-XFDFN	PG-TSSLP-2-1	-55°C ~ 150°C
IDD15E60BUMA2	Infineon Technologies	DIODE GEN PURP 600V 29.2A TO252 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 29.2A (DC) Voltage - Forward (Vf) (Max) @ If: 2V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 87ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: PG-TO252-3 Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,648	600V	29.2A (DC)	2V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	87ns	50µA @ 600V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	PG-TO252-3	-55°C ~ 175°C
IDD09E60BUMA1	Infineon Technologies	DIODE GEN PURP 600V 19.3A TO252 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 19.3A (DC) Voltage - Forward (Vf) (Max) @ If: 2V @ 9A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: PG-TO252-3 Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,064	600V	19.3A (DC)	2V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	50µA @ 600V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	PG-TO252-3	-55°C ~ 175°C
IDD06E60BUMA1	Infineon Technologies	DIODE GEN PURP 600V 14.7A TO252 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 14.7A (DC) Voltage - Forward (Vf) (Max) @ If: 2V @ 6A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 70ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: PG-TO252-3 Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,488	600V	14.7A (DC)	2V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	70ns	50µA @ 600V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	PG-TO252-3	-55°C ~ 175°C
BAT1502LSE6433XTMA1	Infineon Technologies	DIODE SCHOTTKY 4V 110MA TSSLP-2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 4V Current - Average Rectified (Io): 110mA (DC) Voltage - Forward (Vf) (Max) @ If: 410mV @ 10mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 1V Capacitance @ Vr, F: 350pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 2-XFDFN Supplier Device Package: PG-TSSLP-2-3 Operating Temperature - Junction: -55°C ~ 150°C	Package: 2-XFDFN	Stock3,488	4V	110mA (DC)	410mV @ 10mA	Small Signal =< 200mA (Io), Any Speed	-	5µA @ 1V	350pF @ 0V, 1MHz	Surface Mount	2-XFDFN	PG-TSSLP-2-3	-55°C ~ 150°C
BAT1502ELE6327XTMA1	Infineon Technologies	DIODE SCHOTTKY 4V 110MA TSLP-2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 4V Current - Average Rectified (Io): 110mA (DC) Voltage - Forward (Vf) (Max) @ If: 410mV @ 10mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 1V Capacitance @ Vr, F: 350pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 2-XDFN Supplier Device Package: PG-TSLP-2-19 Operating Temperature - Junction: -55°C ~ 150°C	Package: 2-XDFN	Stock3,328	4V	110mA (DC)	410mV @ 10mA	Small Signal =< 200mA (Io), Any Speed	-	5µA @ 1V	350pF @ 0V, 1MHz	Surface Mount	2-XDFN	PG-TSLP-2-19	-55°C ~ 150°C
BAW78DH6327XTSA1	Infineon Technologies	DIODE GP 400V 1A SOT89 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A (DC) Voltage - Forward (Vf) (Max) @ If: 1.6V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1µs Current - Reverse Leakage @ Vr: 1µA @ 400V Capacitance @ Vr, F: 10pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PG-SOT89 Operating Temperature - Junction: 150°C (Max)	Package: TO-243AA	Stock5,488	400V	1A (DC)	1.6V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1µs	1µA @ 400V	10pF @ 0V, 1MHz	Surface Mount	TO-243AA	PG-SOT89	150°C (Max)
BAT6202VH6327XTSA1	Infineon Technologies	DIODE SCHOTTKY 40V SC79-2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 20mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 2mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 40V Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: PG-SC79-2 Operating Temperature - Junction: 150°C (Max)	Package: SC-79, SOD-523	Stock2,208	40V	20mA (DC)	1V @ 2mA	Small Signal =< 200mA (Io), Any Speed	-	10µA @ 40V	0.6pF @ 0V, 1MHz	Surface Mount	SC-79, SOD-523	PG-SC79-2	150°C (Max)
BAS3005S02LRHE6327XTSA1	Infineon Technologies	DIODE SCHOTTKY 30V 500MA TSLP-2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 500mA (DC) Voltage - Forward (Vf) (Max) @ If: 500mV @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 300µA @ 30V Capacitance @ Vr, F: 15pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-882 Supplier Device Package: PG-TSLP-2 Operating Temperature - Junction: -55°C ~ 150°C	Package: SOD-882	Stock3,568	30V	500mA (DC)	500mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	300µA @ 30V	15pF @ 5V, 1MHz	Surface Mount	SOD-882	PG-TSLP-2	-55°C ~ 150°C
BAT5402LRHE6327XTSA1	Infineon Technologies	DIODE SCHOTTKY 30V 200MA TSLP-2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5ns Current - Reverse Leakage @ Vr: 2µA @ 25V Capacitance @ Vr, F: 10pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-882 Supplier Device Package: PG-TSLP-2 Operating Temperature - Junction: 150°C (Max)	Package: SOD-882	Stock3,552	30V	200mA (DC)	800mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	5ns	2µA @ 25V	10pF @ 1V, 1MHz	Surface Mount	SOD-882	PG-TSLP-2	150°C (Max)
BAS7002VH6327XTSA1	Infineon Technologies	DIODE SCHOTTKY HS 70V 70MA SC79 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 70V Current - Average Rectified (Io): 70mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 100ps Current - Reverse Leakage @ Vr: 100nA @ 50V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: PG-SOD323-2 Operating Temperature - Junction: 150°C (Max)	Package: SC-79, SOD-523	Stock2,368	70V	70mA (DC)	1V @ 15mA	Small Signal =< 200mA (Io), Any Speed	100ps	100nA @ 50V	2pF @ 0V, 1MHz	Surface Mount	SC-79, SOD-523	PG-SOD323-2	150°C (Max)
BAS5202VH6433XTMA1	Infineon Technologies	DIODE SCHOTTKY 45V 750MA SC79-2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 750mA (DC) Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 45V Capacitance @ Vr, F: 10pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: PG-SC79-2 Operating Temperature - Junction: 150°C (Max)	Package: SC-79, SOD-523	Stock7,280	45V	750mA (DC)	600mV @ 200mA	Fast Recovery =< 500ns, > 200mA (Io)	-	10µA @ 45V	10pF @ 10V, 1MHz	Surface Mount	SC-79, SOD-523	PG-SC79-2	150°C (Max)
BAS7002LE6327XTMA1	Infineon Technologies	DIODE SCHOTTKY 70V 70MA TSLP-2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 70V Current - Average Rectified (Io): 70mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 100ps Current - Reverse Leakage @ Vr: 100nA @ 50V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-882 Supplier Device Package: PG-TSLP-2 Operating Temperature - Junction: -55°C ~ 125°C	Package: SOD-882	Stock3,920	70V	70mA (DC)	1V @ 15mA	Small Signal =< 200mA (Io), Any Speed	100ps	100nA @ 50V	2pF @ 0V, 1MHz	Surface Mount	SOD-882	PG-TSLP-2	-55°C ~ 125°C
BAS4002LE6327XTMA1	Infineon Technologies	DIODE SCHOTTKY 40V 120MA TSLP-2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 120mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 40mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 100ps Current - Reverse Leakage @ Vr: 1µA @ 30V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-882 Supplier Device Package: PG-TSLP-2 Operating Temperature - Junction: -55°C ~ 150°C	Package: SOD-882	Stock3,184	40V	120mA (DC)	1V @ 40mA	Small Signal =< 200mA (Io), Any Speed	100ps	1µA @ 30V	5pF @ 0V, 1MHz	Surface Mount	SOD-882	PG-TSLP-2	-55°C ~ 150°C
BAT54WH6327XTSA1	Infineon Technologies	DIODE SCHOTTKY 30V 200MA SOT323 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5ns Current - Reverse Leakage @ Vr: 2µA @ 25V Capacitance @ Vr, F: 10pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3 Operating Temperature - Junction: 150°C (Max)	Package: SC-70, SOT-323	Stock7,776	30V	200mA (DC)	800mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	5ns	2µA @ 25V	10pF @ 1V, 1MHz	Surface Mount	SC-70, SOT-323	PG-SOT323-3	150°C (Max)