Page 2 - Infineon Technologies Products - Diodes - Rectifiers - Single

IDP2308T1XUMA1
Infineon Technologies

AC/DC DIGITAL PLATFORM

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SIDC14D60F6X7SA1
Infineon Technologies

DIODE GEN PURP 600V 45A DIE

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SIDC03D60C8F1SA1
Infineon Technologies

DIODE GEN PURP 600V 10A DIE

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DZ600N12KHPSA1
Infineon Technologies

DIODE GEN PURP 1.2KV 735A MODULE

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Stock6
GATELEAD28134XPSA1
Infineon Technologies

DUMMY 57

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SIDC03D60C8X7SA2
Infineon Technologies

DIODE GEN PURP 600V 10A DIE

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BAW78C
Infineon Technologies

DIODE GEN PURP 200V 1A SOT89-4-2

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ND261N26KHPSA1
Infineon Technologies

DIODE GP 2.6KV 260A PB50ND-1

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PX8847DDQG004XUMA1
Infineon Technologies

LED PX8847DDQG004XUMA1

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D452N12EVFXPSA1
Infineon Technologies

DIODE GEN PURP 1.2KV 450A FL54

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AIDW30S65C5XKSA1
Infineon Technologies

DIODE SIL CARB 650V 30A TO247-3

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Stock72
D650N06TXPSA1
Infineon Technologies

DIODE GEN PURP 600V 650A

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IDH10SG60CXKSA2
Infineon Technologies

DIODE SIL CARB 600V 10A TO220-1

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Stock1,056
D1800N40TVFXPSA1
Infineon Technologies

DIODE GEN PURP 4KV 1800A

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IDWD40E120D7XKSA1
Infineon Technologies

INDUSTRY 14

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Stock720
D170S25CXPSA1
Infineon Technologies

DIODE GEN PURP 2.5KV 255A

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D475N36BXPSA1
Infineon Technologies

DIODE GEN PURP 3.6KV 475A

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IDH04SG60CXKSA2
Infineon Technologies

DIODE SIL CARB 600V 4A TO220-2-1

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Stock1,197
AIDK12S65C5ATMA1
Infineon Technologies

DISCRETE DIODES

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Stock2,940
D4201N20TXPSA1
Infineon Technologies

DIODE GEN PURP 2KV 6010A

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Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
IDP2308T1XUMA1	Infineon Technologies	AC/DC DIGITAL PLATFORM Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
SIDC14D60F6X7SA1	Infineon Technologies	DIODE GEN PURP 600V 45A DIE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 45A Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 45 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die Operating Temperature - Junction: -40°C ~ 175°C	Package: -	Request a Quote	600 V	45A	1.6 V @ 45 A	Standard Recovery >500ns, > 200mA (Io)	-	27 µA @ 600 V	-	Surface Mount	Die	Die	-40°C ~ 175°C
SIDC03D60C8F1SA1	Infineon Technologies	DIODE GEN PURP 600V 10A DIE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 10 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die Operating Temperature - Junction: -40°C ~ 175°C	Package: -	Request a Quote	600 V	10A	1.95 V @ 10 A	Standard Recovery >500ns, > 200mA (Io)	-	27 µA @ 600 V	-	Surface Mount	Die	Die	-40°C ~ 175°C
DZ600N12KHPSA1	Infineon Technologies	DIODE GEN PURP 1.2KV 735A MODULE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 735A Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 2200 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 40 mA @ 1200 V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module Operating Temperature - Junction: -40°C ~ 150°C	Package: -	Stock6	1200 V	735A	1.4 V @ 2200 A	Standard Recovery >500ns, > 200mA (Io)	-	40 mA @ 1200 V	-	Chassis Mount	Module	Module	-40°C ~ 150°C
GATELEAD28134XPSA1	Infineon Technologies	DUMMY 57 Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
SIDC03D60C8X7SA2	Infineon Technologies	DIODE GEN PURP 600V 10A DIE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 10 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die Operating Temperature - Junction: -40°C ~ 175°C	Package: -	Request a Quote	600 V	10A	1.95 V @ 10 A	Standard Recovery >500ns, > 200mA (Io)	-	27 µA @ 600 V	-	Surface Mount	Die	Die	-40°C ~ 175°C
BAW78C	Infineon Technologies	DIODE GEN PURP 200V 1A SOT89-4-2 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1 µs Current - Reverse Leakage @ Vr: 1 µA @ 200 V Capacitance @ Vr, F: 10pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PG-SOT89-4-2 Operating Temperature - Junction: 150°C	Package: -	Request a Quote	200 V	1A	1.6 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	1 µs	1 µA @ 200 V	10pF @ 0V, 1MHz	Surface Mount	TO-243AA	PG-SOT89-4-2	150°C
ND261N26KHPSA1	Infineon Technologies	DIODE GP 2.6KV 260A PB50ND-1 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2600 V Current - Average Rectified (Io): 260A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 40 mA @ 2600 V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: BG-PB50ND-1 Operating Temperature - Junction: -40°C ~ 135°C	Package: -	Request a Quote	2600 V	260A	-	Standard Recovery >500ns, > 200mA (Io)	-	40 mA @ 2600 V	-	Chassis Mount	Module	BG-PB50ND-1	-40°C ~ 135°C
PX8847DDQG004XUMA1	Infineon Technologies	LED PX8847DDQG004XUMA1 Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
D452N12EVFXPSA1	Infineon Technologies	DIODE GEN PURP 1.2KV 450A FL54 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 450A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 mA @ 1200 V Capacitance @ Vr, F: - Mounting Type: Screw Mount Package / Case: Nonstandard Supplier Device Package: FL54 Operating Temperature - Junction: -40°C ~ 180°C	Package: -	Request a Quote	1200 V	450A	-	Standard Recovery >500ns, > 200mA (Io)	-	50 mA @ 1200 V	-	Screw Mount	Nonstandard	FL54	-40°C ~ 180°C
AIDW30S65C5XKSA1	Infineon Technologies	DIODE SIL CARB 650V 30A TO247-3 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 120 µA @ 650 V Capacitance @ Vr, F: 860pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3-41 Operating Temperature - Junction: -40°C ~ 175°C	Package: -	Stock72	650 V	30A	1.7 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	120 µA @ 650 V	860pF @ 1V, 1MHz	Through Hole	TO-247-3	PG-TO247-3-41	-40°C ~ 175°C
D650N06TXPSA1	Infineon Technologies	DIODE GEN PURP 600V 650A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 650A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 450 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20 mA @ 600 V Capacitance @ Vr, F: - Mounting Type: Clamp On Package / Case: DO-200AA, A-PUK Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 180°C	Package: -	Request a Quote	600 V	650A	950 mV @ 450 A	Standard Recovery >500ns, > 200mA (Io)	-	20 mA @ 600 V	-	Clamp On	DO-200AA, A-PUK	-	-40°C ~ 180°C
IDH10SG60CXKSA2	Infineon Technologies	DIODE SIL CARB 600V 10A TO220-1 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 10 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 90 µA @ 600 V Capacitance @ Vr, F: 290pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: PG-TO220-2-1 Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Stock1,056	600 V	10A	2.1 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	90 µA @ 600 V	290pF @ 1V, 1MHz	Through Hole	TO-220-2	PG-TO220-2-1	-55°C ~ 175°C
D1800N40TVFXPSA1	Infineon Technologies	DIODE GEN PURP 4KV 1800A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 4000 V Current - Average Rectified (Io): 1800A Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 1500 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 mA @ 4000 V Capacitance @ Vr, F: - Mounting Type: Clamp On Package / Case: DO-200AC, K-PUK Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 160°C	Package: -	Request a Quote	4000 V	1800A	1.32 V @ 1500 A	Standard Recovery >500ns, > 200mA (Io)	-	100 mA @ 4000 V	-	Clamp On	DO-200AC, K-PUK	-	-40°C ~ 160°C
IDWD40E120D7XKSA1	Infineon Technologies	INDUSTRY 14 Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Stock720	-	-	-	-	-	-	-	-	-	-	-
D170S25CXPSA1	Infineon Technologies	DIODE GEN PURP 2.5KV 255A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2500 V Current - Average Rectified (Io): 255A Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 800 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 mA @ 2500 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 140°C	Package: -	Request a Quote	2500 V	255A	2.3 V @ 800 A	Standard Recovery >500ns, > 200mA (Io)	-	5 mA @ 2500 V	-	Stud Mount	DO-205AA, DO-8, Stud	-	-40°C ~ 140°C
D475N36BXPSA1	Infineon Technologies	DIODE GEN PURP 3.6KV 475A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 3600 V Current - Average Rectified (Io): 475A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 40 mA @ 3600 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 160°C	Package: -	Request a Quote	3600 V	475A	-	Standard Recovery >500ns, > 200mA (Io)	-	40 mA @ 3600 V	-	Stud Mount	DO-205AA, DO-8, Stud	-	-40°C ~ 160°C
IDH04SG60CXKSA2	Infineon Technologies	DIODE SIL CARB 600V 4A TO220-2-1 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 4 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 25 µA @ 600 V Capacitance @ Vr, F: 80pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: PG-TO220-2-1 Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Stock1,197	600 V	4A	2.3 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	25 µA @ 600 V	80pF @ 1V, 1MHz	Through Hole	TO-220-2	PG-TO220-2-1	-55°C ~ 175°C
AIDK12S65C5ATMA1	Infineon Technologies	DISCRETE DIODES Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 70 µA @ 650 V Capacitance @ Vr, F: 363pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-2 Operating Temperature - Junction: -40°C ~ 175°C	Package: -	Stock2,940	650 V	12A	1.7 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	70 µA @ 650 V	363pF @ 1V, 1MHz	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	PG-TO263-2	-40°C ~ 175°C
D4201N20TXPSA1	Infineon Technologies	DIODE GEN PURP 2KV 6010A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2000 V Current - Average Rectified (Io): 6010A Voltage - Forward (Vf) (Max) @ If: 1 V @ 4000 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 mA @ 2000 V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AE Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 160°C	Package: -	Request a Quote	2000 V	6010A	1 V @ 4000 A	Standard Recovery >500ns, > 200mA (Io)	-	200 mA @ 2000 V	-	Chassis Mount	DO-200AE	-	-40°C ~ 160°C
IDK10G65C5XTMA2	Infineon Technologies	DIODE SIL CARB 650V 10A TO263-2 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: 300pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-2 Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Stock6,540	650 V	10A	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	-	300pF @ 1V, 1MHz	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	PG-TO263-2	-55°C ~ 175°C
56DN06B02ELEMXPSA1	Infineon Technologies	DIODE GP 600V 11140A E-EUPEC-0 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 11140A Voltage - Forward (Vf) (Max) @ If: 940 mV @ 8000 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 60 mA @ 600 V Capacitance @ Vr, F: - Mounting Type: Clamp On Package / Case: DO-200AB, B-PUK Supplier Device Package: E-EUPEC-0 Operating Temperature - Junction: 180°C (Max)	Package: -	Stock36	600 V	11140A	940 mV @ 8000 A	Standard Recovery >500ns, > 200mA (Io)	-	60 mA @ 600 V	-	Clamp On	DO-200AB, B-PUK	E-EUPEC-0	180°C (Max)
IDC40D120T6HX1SA1	Infineon Technologies	DIODE GEN PURP 1.2KV 75A D2PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 75A Voltage - Forward (Vf) (Max) @ If: 2.25 V @ 75 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 14 µA @ 1200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -40°C ~ 175°C	Package: -	Request a Quote	1200 V	75A	2.25 V @ 75 A	Standard Recovery >500ns, > 200mA (Io)	-	14 µA @ 1200 V	-	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	D2PAK	-40°C ~ 175°C
ND260N08KHPSA1	Infineon Technologies	DIODE GP 800V 260A PB50ND-1 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 260A Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 800 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 30 mA @ 800 V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: BG-PB50ND-1 Operating Temperature - Junction: 150°C (Max)	Package: -	Request a Quote	800 V	260A	1.32 V @ 800 A	Standard Recovery >500ns, > 200mA (Io)	-	30 mA @ 800 V	-	Chassis Mount	Module	BG-PB50ND-1	150°C (Max)
D950N18TXPSA1	Infineon Technologies	DIODE GEN PURP 1.8KV 950A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1800 V Current - Average Rectified (Io): 950A Voltage - Forward (Vf) (Max) @ If: 1.12 V @ 650 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 40 mA @ 1800 V Capacitance @ Vr, F: - Mounting Type: Clamp On Package / Case: DO-200AA, A-PUK Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 180°C	Package: -	Stock21	1800 V	950A	1.12 V @ 650 A	Standard Recovery >500ns, > 200mA (Io)	-	40 mA @ 1800 V	-	Clamp On	DO-200AA, A-PUK	-	-40°C ~ 180°C
IDD06SG60CXTMA2	Infineon Technologies	DIODE SIL CARB 600V 6A TO252-3 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 6 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 50 µA @ 600 V Capacitance @ Vr, F: 130pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: PG-TO252-3 Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Stock29,925	600 V	6A	2.3 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 600 V	130pF @ 1V, 1MHz	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	PG-TO252-3	-55°C ~ 175°C
56DN06ELEMEVMITPRXPSA1	Infineon Technologies	DIODE GP 600V 6400A E-EUPEC-0 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 6400A Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 10000 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 mA @ 600 V Capacitance @ Vr, F: - Mounting Type: Clamp On Package / Case: DO-200AB, B-PUK Supplier Device Package: E-EUPEC-0 Operating Temperature - Junction: 180°C (Max)	Package: -	Request a Quote	600 V	6400A	1.15 V @ 10000 A	Standard Recovery >500ns, > 200mA (Io)	-	100 mA @ 600 V	-	Clamp On	DO-200AB, B-PUK	E-EUPEC-0	180°C (Max)
IDWD75E120D7XKSA1	Infineon Technologies	INDUSTRY 14 Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Stock720	-	-	-	-	-	-	-	-	-	-	-