Page 27 - Infineon Technologies Products - Diodes - Rectifiers - Single

IDL12G65C5XUMA1
Infineon Technologies

DIODE SCHOTTKY 650V 12A VSON-4

Package: 4-PowerTSFN

Stock3,024
IDL10G65C5XUMA1
Infineon Technologies

DIODE SCHOTTKY 650V 10A VSON-4

Package: 4-PowerTSFN

Stock4,496
IDL08G65C5XUMA1
Infineon Technologies

DIODE SCHOTTKY 650V 8A VSON-4

Package: 4-PowerTSFN

Stock4,976
IDL06G65C5XUMA1
Infineon Technologies

DIODE SCHOTTKY 650V 6A VSON-4

Package: 4-PowerTSFN

Stock7,568
IDL04G65C5XUMA1
Infineon Technologies

DIODE SCHOTTKY 650V 4A VSON-4

Package: 4-PowerTSFN

Stock2,576
IDL02G65C5XUMA1
Infineon Technologies

DIODE SCHOTTKY 650V 2A VSON-4

Package: 4-PowerTSFN

Stock4,816
IDK12G65C5XTMA1
Infineon Technologies

DIODE SCHOTTKY 650V 12A TO263-2

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,144
IDK10G65C5XTMA1
Infineon Technologies

DIODE SCHOTTKY 650V 10A TO263-2

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,312
IDK09G65C5XTMA1
Infineon Technologies

DIODE SCHOTTKY 650V 9A TO263-2

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,656
IDK08G65C5XTMA1
Infineon Technologies

DIODE SCHOTTKY 650V 8A TO263-2

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,296
IDK06G65C5XTMA1
Infineon Technologies

DIODE SCHOTTKY 650V 6A TO263-2

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,552
IDK05G65C5XTMA1
Infineon Technologies

DIODE SCHOTTKY 650V 5A TO263-2

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,736
IDK04G65C5XTMA1
Infineon Technologies

DIODE SCHOTTKY 650V 4A TO263-2

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,168
IDK03G65C5XTMA1
Infineon Technologies

DIODE SCHOTTKY 650V 3A TO263-2

Package: TO-262

Stock4,272
IDK02G65C5XTMA1
Infineon Technologies

DIODE SCHOTTKY 650V 2A TO263-2

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,160
IDH12G65C5XKSA1
Infineon Technologies

DIODE SCHOTTKY 650V 12A TO220-2

Package: TO-220-2

Stock5,936
IDH02G65C5XKSA1
Infineon Technologies

DIODE SCHOTTKY 650V 2A TO220-2

Package: TO-220-2

Stock6,032
62-0254PBF
Infineon Technologies

DIODE SHOCTTKY

Package: -

Stock7,040
62-0253PBF
Infineon Technologies

DIODE SHOCTTKY

Package: -

Stock4,080
62-0245PBF
Infineon Technologies

DIODE SHOCTTKY

Package: -

Stock3,744

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
IDL12G65C5XUMA1	Infineon Technologies	DIODE SCHOTTKY 650V 12A VSON-4 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 12A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 12A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 190µA @ 650V Capacitance @ Vr, F: 360pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: 4-PowerTSFN Supplier Device Package: PG-VSON-4 Operating Temperature - Junction: -55°C ~ 150°C	Package: 4-PowerTSFN	Stock3,024	650V	12A (DC)	1.7V @ 12A	No Recovery Time > 500mA (Io)	0ns	190µA @ 650V	360pF @ 1V, 1MHz	Surface Mount	4-PowerTSFN	PG-VSON-4	-55°C ~ 150°C
IDL10G65C5XUMA1	Infineon Technologies	DIODE SCHOTTKY 650V 10A VSON-4 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 10A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 180µA @ 650V Capacitance @ Vr, F: 300pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: 4-PowerTSFN Supplier Device Package: PG-VSON-4 Operating Temperature - Junction: -55°C ~ 150°C	Package: 4-PowerTSFN	Stock4,496	650V	10A (DC)	1.7V @ 10A	No Recovery Time > 500mA (Io)	0ns	180µA @ 650V	300pF @ 1V, 1MHz	Surface Mount	4-PowerTSFN	PG-VSON-4	-55°C ~ 150°C
IDL08G65C5XUMA1	Infineon Technologies	DIODE SCHOTTKY 650V 8A VSON-4 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 8A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 140µA @ 650V Capacitance @ Vr, F: 250pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: 4-PowerTSFN Supplier Device Package: PG-VSON-4 Operating Temperature - Junction: -55°C ~ 150°C	Package: 4-PowerTSFN	Stock4,976	650V	8A (DC)	1.7V @ 8A	No Recovery Time > 500mA (Io)	0ns	140µA @ 650V	250pF @ 1V, 1MHz	Surface Mount	4-PowerTSFN	PG-VSON-4	-55°C ~ 150°C
IDL06G65C5XUMA1	Infineon Technologies	DIODE SCHOTTKY 650V 6A VSON-4 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 6A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 110µA @ 650V Capacitance @ Vr, F: 190pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: 4-PowerTSFN Supplier Device Package: PG-VSON-4 Operating Temperature - Junction: -55°C ~ 150°C	Package: 4-PowerTSFN	Stock7,568	650V	6A (DC)	1.7V @ 6A	No Recovery Time > 500mA (Io)	0ns	110µA @ 650V	190pF @ 1V, 1MHz	Surface Mount	4-PowerTSFN	PG-VSON-4	-55°C ~ 150°C
IDL04G65C5XUMA1	Infineon Technologies	DIODE SCHOTTKY 650V 4A VSON-4 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 4A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 4A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 70µA @ 650V Capacitance @ Vr, F: 130pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: 4-PowerTSFN Supplier Device Package: PG-VSON-4 Operating Temperature - Junction: -55°C ~ 175°C	Package: 4-PowerTSFN	Stock2,576	650V	4A (DC)	1.7V @ 4A	No Recovery Time > 500mA (Io)	0ns	70µA @ 650V	130pF @ 1V, 1MHz	Surface Mount	4-PowerTSFN	PG-VSON-4	-55°C ~ 175°C
IDL02G65C5XUMA1	Infineon Technologies	DIODE SCHOTTKY 650V 2A VSON-4 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 2A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 2A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 35µA @ 650V Capacitance @ Vr, F: 70pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: 4-PowerTSFN Supplier Device Package: PG-VSON-4 Operating Temperature - Junction: -55°C ~ 175°C	Package: 4-PowerTSFN	Stock4,816	650V	2A (DC)	1.7V @ 2A	No Recovery Time > 500mA (Io)	0ns	35µA @ 650V	70pF @ 1V, 1MHz	Surface Mount	4-PowerTSFN	PG-VSON-4	-55°C ~ 175°C
IDK12G65C5XTMA1	Infineon Technologies	DIODE SCHOTTKY 650V 12A TO263-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 12A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 12A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 2.1mA @ 650V Capacitance @ Vr, F: 360pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-2 Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,144	650V	12A (DC)	1.8V @ 12A	No Recovery Time > 500mA (Io)	0ns	2.1mA @ 650V	360pF @ 1V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	PG-TO263-2	-55°C ~ 175°C
IDK10G65C5XTMA1	Infineon Technologies	DIODE SCHOTTKY 650V 10A TO263-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 10A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 1.7mA @ 650V Capacitance @ Vr, F: 300pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-2 Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,312	650V	10A (DC)	1.8V @ 10A	No Recovery Time > 500mA (Io)	0ns	1.7mA @ 650V	300pF @ 1V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	PG-TO263-2	-55°C ~ 175°C
IDK09G65C5XTMA1	Infineon Technologies	DIODE SCHOTTKY 650V 9A TO263-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 9A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 9A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 1.6mA @ 650V Capacitance @ Vr, F: 270pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-2 Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,656	650V	9A (DC)	1.8V @ 9A	No Recovery Time > 500mA (Io)	0ns	1.6mA @ 650V	270pF @ 1V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	PG-TO263-2	-55°C ~ 175°C
IDK08G65C5XTMA1	Infineon Technologies	DIODE SCHOTTKY 650V 8A TO263-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 8A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 8A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 1.4mA @ 650V Capacitance @ Vr, F: 250pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-2 Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,296	650V	8A (DC)	1.8V @ 8A	No Recovery Time > 500mA (Io)	0ns	1.4mA @ 650V	250pF @ 1V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	PG-TO263-2	-55°C ~ 175°C
IDK06G65C5XTMA1	Infineon Technologies	DIODE SCHOTTKY 650V 6A TO263-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 6A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 6A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 1.1mA @ 650V Capacitance @ Vr, F: 190pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-2 Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,552	650V	6A (DC)	1.8V @ 6A	No Recovery Time > 500mA (Io)	0ns	1.1mA @ 650V	190pF @ 1V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	PG-TO263-2	-55°C ~ 175°C
IDK05G65C5XTMA1	Infineon Technologies	DIODE SCHOTTKY 650V 5A TO263-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 5A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 830µA @ 650V Capacitance @ Vr, F: 160pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-2 Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,736	650V	5A (DC)	1.8V @ 5A	No Recovery Time > 500mA (Io)	0ns	830µA @ 650V	160pF @ 1V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	PG-TO263-2	-55°C ~ 175°C
IDK04G65C5XTMA1	Infineon Technologies	DIODE SCHOTTKY 650V 4A TO263-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 4A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 4A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 670µA @ 650V Capacitance @ Vr, F: 130pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-2 Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,168	650V	4A (DC)	1.8V @ 4A	No Recovery Time > 500mA (Io)	0ns	670µA @ 650V	130pF @ 1V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	PG-TO263-2	-55°C ~ 175°C
IDK03G65C5XTMA1	Infineon Technologies	DIODE SCHOTTKY 650V 3A TO263-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 3A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 3A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 500µA @ 650V Capacitance @ Vr, F: 100pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-262 Supplier Device Package: PG-TO263-2 Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-262	Stock4,272	650V	3A (DC)	1.8V @ 3A	No Recovery Time > 500mA (Io)	0ns	500µA @ 650V	100pF @ 1V, 1MHz	Surface Mount	TO-262	PG-TO263-2	-55°C ~ 175°C
IDK02G65C5XTMA1	Infineon Technologies	DIODE SCHOTTKY 650V 2A TO263-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 2A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 2A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 330µA @ 650V Capacitance @ Vr, F: 70pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-2 Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,160	650V	2A (DC)	1.8V @ 2A	No Recovery Time > 500mA (Io)	0ns	330µA @ 650V	70pF @ 1V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	PG-TO263-2	-55°C ~ 175°C
IDH12G65C5XKSA1	Infineon Technologies	DIODE SCHOTTKY 650V 12A TO220-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 12A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 12A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 190µA @ 650V Capacitance @ Vr, F: 360pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: PG-TO220-2 Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-220-2	Stock5,936	650V	12A (DC)	1.7V @ 12A	No Recovery Time > 500mA (Io)	0ns	190µA @ 650V	360pF @ 1V, 1MHz	Through Hole	TO-220-2	PG-TO220-2	-55°C ~ 175°C
IDH02G65C5XKSA1	Infineon Technologies	DIODE SCHOTTKY 650V 2A TO220-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 2A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 2A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 35µA @ 650V Capacitance @ Vr, F: 70pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: PG-TO220-2 Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-220-2	Stock6,032	650V	2A (DC)	1.7V @ 2A	No Recovery Time > 500mA (Io)	0ns	35µA @ 650V	70pF @ 1V, 1MHz	Through Hole	TO-220-2	PG-TO220-2	-55°C ~ 175°C
62-0254PBF	Infineon Technologies	DIODE SHOCTTKY Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Stock7,040	-	-	-	-	-	-	-	-	-	-	-
62-0253PBF	Infineon Technologies	DIODE SHOCTTKY Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Stock4,080	-	-	-	-	-	-	-	-	-	-	-
62-0245PBF	Infineon Technologies	DIODE SHOCTTKY Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Stock3,744	-	-	-	-	-	-	-	-	-	-	-
62-0239PBF	Infineon Technologies	DIODE SHOCTTKY Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Stock6,864	-	-	-	-	-	-	-	-	-	-	-
62-0216PBF	Infineon Technologies	DIODE SHOCTTKY Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Stock3,040	-	-	-	-	-	-	-	-	-	-	-
62-0209PBF	Infineon Technologies	DIODE SHOCTTKY Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Stock3,216	-	-	-	-	-	-	-	-	-	-	-
BAS21E6359HTMA1	Infineon Technologies	DIODE GP 200V 250MA SOT23-3 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 250mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 100nA @ 200V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3 Operating Temperature - Junction: 150°C (Max)	Package: TO-236-3, SC-59, SOT-23-3	Stock5,632	200V	250mA (DC)	1V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	50ns	100nA @ 200V	5pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3	150°C (Max)
BAS16E6393HTSA1	Infineon Technologies	DIODE GP 80V 250MA SOT23-3 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 250mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 1µA @ 75V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3 Operating Temperature - Junction: 150°C (Max)	Package: TO-236-3, SC-59, SOT-23-3	Stock3,312	80V	250mA (DC)	1.25V @ 150mA	Fast Recovery =< 500ns, > 200mA (Io)	4ns	1µA @ 75V	2pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3	150°C (Max)
IDD04S60CBUMA1	Infineon Technologies	DIODE SCHOTTKY 600V 5.6A TO252-3 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 5.6A Voltage - Forward (Vf) (Max) @ If: 1.9V @ 4A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: 130pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: PG-TO252-3 Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,296	600V	5.6A	1.9V @ 4A	No Recovery Time > 500mA (Io)	0ns	50µA @ 600V	130pF @ 1V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	PG-TO252-3	-55°C ~ 175°C
BAS7002WH6327XTSA1	Infineon Technologies	DIODE SCHOTTKY 70V 70MA SCD80-2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 70V Current - Average Rectified (Io): 70mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 100ps Current - Reverse Leakage @ Vr: 100nA @ 50V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-80 Supplier Device Package: PG-SCD80-2 Operating Temperature - Junction: -55°C ~ 125°C	Package: SC-80	Stock5,520	70V	70mA (DC)	1V @ 15mA	Small Signal =< 200mA (Io), Any Speed	100ps	100nA @ 50V	2pF @ 0V, 1MHz	Surface Mount	SC-80	PG-SCD80-2	-55°C ~ 125°C
BAS1602WH6327XTSA1	Infineon Technologies	DIODE GEN PURP 80V 200MA SCD80-2 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 1µA @ 75V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-80 Supplier Device Package: PG-SCD80-2 Operating Temperature - Junction: 150°C (Max)	Package: SC-80	Stock3,344	80V	200mA (DC)	1.25V @ 150mA	Small Signal =< 200mA (Io), Any Speed	4ns	1µA @ 75V	2pF @ 0V, 1MHz	Surface Mount	SC-80	PG-SCD80-2	150°C (Max)