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Infineon Technologies |
MOSFET 2N-CH 8TDSON
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 20A
- Rds On (Max) @ Id, Vgs: 15.5 mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id: 4V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 25V
- Power - Max: 50W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PG-TDSON-8-4
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Package: 8-PowerVDFN |
Stock4,000 |
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Standard | 60V | 20A | 15.5 mOhm @ 17A, 10V | 4V @ 20µA | 29nC @ 10V | 2260pF @ 25V | 50W | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerVDFN | PG-TDSON-8-4 |
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Infineon Technologies |
MOSFET N/P-CH 30V 6.8A/4.6A 8-SO
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6.8A, 4.6A
- Rds On (Max) @ Id, Vgs: 27 mOhm @ 6.8A, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 10µA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 398pF @ 15V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock3,216 |
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Logic Level Gate | 30V | 6.8A, 4.6A | 27 mOhm @ 6.8A, 10V | 2.3V @ 10µA | 14nC @ 10V | 398pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET 2N-CH 25V 86A/303A PQFN
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 86A, 303A
- Rds On (Max) @ Id, Vgs: 2.75 mOhm @ 27A, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 35µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1735pF @ 13V
- Power - Max: 156W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 32-PowerWFQFN
- Supplier Device Package: 32-PQFN (6x6)
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Package: 32-PowerWFQFN |
Stock4,400 |
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Logic Level Gate | 25V | 86A, 303A | 2.75 mOhm @ 27A, 10V | 2.1V @ 35µA | 20nC @ 4.5V | 1735pF @ 13V | 156W | -55°C ~ 150°C (TJ) | Surface Mount | 32-PowerWFQFN | 32-PQFN (6x6) |
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Infineon Technologies |
MOSFET 2N-CH 25V 64A/105A PQFN
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 64A, 105A
- Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 35µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 13V
- Power - Max: 31W, 38W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PQFN (5x6)
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Package: 8-PowerVDFN |
Stock5,472 |
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Logic Level Gate | 25V | 64A, 105A | 3.2 mOhm @ 30A, 10V | 2.1V @ 35µA | 15nC @ 4.5V | 1314pF @ 13V | 31W, 38W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PQFN (5x6) |
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Infineon Technologies |
MOSFET 2P-CH 30V 14A DIRECTFET
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 14A
- Rds On (Max) @ Id, Vgs: 7 mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3241pF @ 15V
- Power - Max: 2.1W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DirectFET? Isometric MC
- Supplier Device Package: DIRECTFET? MC
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Package: DirectFET? Isometric MC |
Stock6,960 |
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Logic Level Gate | 30V | 14A | 7 mOhm @ 14A, 10V | 2.4V @ 50µA | 64nC @ 10V | 3241pF @ 15V | 2.1W | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET? Isometric MC | DIRECTFET? MC |
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Infineon Technologies |
MOSFET 2N-CH 25V 16A SA
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 16A
- Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 35µA
- Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 13V
- Power - Max: 1.7W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DirectFET? Isometric SA
- Supplier Device Package: DIRECTFET? SA
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Package: DirectFET? Isometric SA |
Stock3,936 |
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Logic Level Gate | 25V | 16A | 4.2 mOhm @ 16A, 10V | 2.1V @ 35µA | 13nC @ 4.5V | 1350pF @ 13V | 1.7W | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET? Isometric SA | DIRECTFET? SA |
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Infineon Technologies |
MOSFET N/P-CH 30V 3.5A/2.3A 8SO
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3.5A, 2.3A
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock555,780 |
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Logic Level Gate | 30V | 3.5A, 2.3A | 100 mOhm @ 2.2A, 10V | 3V @ 250µA | 14nC @ 10V | 190pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET N/P-CH 30V 5.8A 8SOIC
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5.8A, 4.3A
- Rds On (Max) @ Id, Vgs: 45 mOhm @ 5.8A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
- Power - Max: 2.5W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock426,360 |
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Logic Level Gate | 30V | 5.8A, 4.3A | 45 mOhm @ 5.8A, 10V | 3V @ 250µA | 25nC @ 10V | 520pF @ 25V | 2.5W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET 2P-CH 55V 3.4A 8SOIC
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 3.4A
- Rds On (Max) @ Id, Vgs: 105 mOhm @ 3.4A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock3,680 |
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Logic Level Gate | 55V | 3.4A | 105 mOhm @ 3.4A, 10V | 3V @ 250µA | 38nC @ 10V | 690pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET 2N-CH 55V 5.1A 8SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 5.1A
- Rds On (Max) @ Id, Vgs: 50 mOhm @ 5.1A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 25V
- Power - Max: 2.4W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock3,872 |
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Logic Level Gate | 55V | 5.1A | 50 mOhm @ 5.1A, 10V | 3V @ 250µA | 44nC @ 10V | 780pF @ 25V | 2.4W | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET N/P-CH 30V 8SOIC
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6.5A, 4.9A
- Rds On (Max) @ Id, Vgs: 29 mOhm @ 5.8A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC
- Supplier Device Package: 8-SO
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Package: 8-SOIC |
Stock260,448 |
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Logic Level Gate | 30V | 6.5A, 4.9A | 29 mOhm @ 5.8A, 10V | 3V @ 250µA | 33nC @ 10V | 650pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SO |
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Infineon Technologies |
MOSFET 2P-CH 30V 4.9A 8SOIC
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: 58 mOhm @ 4.9A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC
- Supplier Device Package: 8-SO
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Package: 8-SOIC |
Stock67,488 |
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Logic Level Gate | 30V | - | 58 mOhm @ 4.9A, 10V | 3V @ 250µA | 34nC @ 10V | 710pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SO |
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Infineon Technologies |
MOSFET 2N-CH 30V 6.5A 8SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6.9A
- Rds On (Max) @ Id, Vgs: 29 mOhm @ 6.9A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 755pF @ 25V
- Power - Max: 2.4W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC
- Supplier Device Package: 8-SO
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Package: 8-SOIC |
Stock6,384 |
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Logic Level Gate | 30V | 6.9A | 29 mOhm @ 6.9A, 10V | 3V @ 250µA | 33nC @ 10V | 755pF @ 25V | 2.4W | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC | 8-SO |
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Infineon Technologies |
MOSFET N/P-CH 30V 4A/3A 8SOIC
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 4A, 3A
- Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.4A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
- Power - Max: 1.4W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC
- Supplier Device Package: 8-SO
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Package: 8-SOIC |
Stock3,216 |
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Logic Level Gate | 30V | 4A, 3A | 50 mOhm @ 2.4A, 10V | 3V @ 250µA | 25nC @ 4.5V | 520pF @ 15V | 1.4W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SO |
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Infineon Technologies |
MOSFET 2P-CH 20V 4A 8SOIC
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4.3A
- Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.2A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC
- Supplier Device Package: 8-SO
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Package: 8-SOIC |
Stock2,560 |
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Logic Level Gate | 20V | 4.3A | 90 mOhm @ 2.2A, 4.5V | 1.5V @ 250µA | 22nC @ 4.5V | 610pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SO |
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Infineon Technologies |
MOSFET 2N-CH 30V 5.3A 8SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5.3A
- Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.7A, 10V
- Vgs(th) (Max) @ Id: 3V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 515pF @ 25V
- Power - Max: 2.4W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC
- Supplier Device Package: 8-SO
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Package: 8-SOIC |
Stock75,660 |
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Logic Level Gate | 30V | 5.3A | 50 mOhm @ 2.7A, 10V | 3V @ 100µA | 21nC @ 10V | 515pF @ 25V | 2.4W | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC | 8-SO |
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Infineon Technologies |
MOSFET 2N-CH 50V 3A 8SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 3A
- Rds On (Max) @ Id, Vgs: 130 mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 25V
- Power - Max: 2.4W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock4,992 |
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Standard | 50V | 3A | 130 mOhm @ 3A, 10V | 3V @ 250µA | 15nC @ 10V | 255pF @ 25V | 2.4W | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET 2N-CH 20V 2.3A 6TSOP
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 2.3A
- Rds On (Max) @ Id, Vgs: 57 mOhm @ 2.3A, 2.5V
- Vgs(th) (Max) @ Id: 750mV @ 11µA
- Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 2.5V
- Input Capacitance (Ciss) (Max) @ Vds: 259pF @ 10V
- Power - Max: 500mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: PG-TSOP6-6
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Package: SOT-23-6 Thin, TSOT-23-6 |
Stock7,568 |
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Logic Level Gate | 20V | 2.3A | 57 mOhm @ 2.3A, 2.5V | 750mV @ 11µA | 1.7nC @ 2.5V | 259pF @ 10V | 500mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | PG-TSOP6-6 |
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Infineon Technologies |
MOSFET 2P-CH 30V 2A 6TSOP
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 2A
- Rds On (Max) @ Id, Vgs: 80 mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id: 1V @ 11µA
- Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V
- Power - Max: 500mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: PG-TSOP6-6
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Package: SOT-23-6 Thin, TSOT-23-6 |
Stock3,424 |
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Logic Level Gate | 30V | 2A | 80 mOhm @ 2A, 10V | 1V @ 11µA | 5nC @ 10V | 500pF @ 15V | 500mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | PG-TSOP6-6 |
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Infineon Technologies |
MOSFET 2N-CH 20V 2.1A 6TSOP
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 2.1A
- Rds On (Max) @ Id, Vgs: 70 mOhm @ 2.1A, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 11µA
- Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V
- Power - Max: 500mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: PG-TSOP6-6
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Package: SOT-23-6 Thin, TSOT-23-6 |
Stock5,728 |
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Logic Level Gate | 20V | 2.1A | 70 mOhm @ 2.1A, 4.5V | 1.2V @ 11µA | 2.1nC @ 4.5V | 419pF @ 10V | 500mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | PG-TSOP6-6 |
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Infineon Technologies |
MOSFET N/P-CH 30V 2.3A/2A 6TSOP
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 2.3A, 2A
- Rds On (Max) @ Id, Vgs: 80 mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id: 2V @ 11µA
- Gate Charge (Qg) (Max) @ Vgs: 500nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 15V
- Power - Max: 500mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: 6-TSOP
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Package: SOT-23-6 Thin, TSOT-23-6 |
Stock2,864 |
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Logic Level Gate | 30V | 2.3A, 2A | 80 mOhm @ 2A, 10V | 2V @ 11µA | 500nC @ 10V | 275pF @ 15V | 500mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 6-TSOP |
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Infineon Technologies |
MOSFET 2N-CH 30V 8.1A 8SO
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8.1A
- Rds On (Max) @ Id, Vgs: 17.9 mOhm @ 8.1A, 4.5V
- Vgs(th) (Max) @ Id: 1.1V @ 10µA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 25V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock3,840 |
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Logic Level Gate | 30V | 8.1A | 17.9 mOhm @ 8.1A, 4.5V | 1.1V @ 10µA | 11nC @ 4.5V | 1020pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET 2N-CH 30V 15A DIRECTFET
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 15A
- Rds On (Max) @ Id, Vgs: 6.6 mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 2.35V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 15V
- Power - Max: 2.7W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DirectFET? Isometric MA
- Supplier Device Package: DIRECTFET? MA
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Package: DirectFET? Isometric MA |
Stock6,048 |
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Logic Level Gate | 30V | 15A | 6.6 mOhm @ 15A, 10V | 2.35V @ 25µA | 14nC @ 4.5V | 1380pF @ 15V | 2.7W | -55°C ~ 175°C (TJ) | Surface Mount | DirectFET? Isometric MA | DIRECTFET? MA |
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Infineon Technologies |
MOSFET 2N-CH 30V 15A DIRECTFET
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 15A
- Rds On (Max) @ Id, Vgs: 6.6 mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 2.35V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 15V
- Power - Max: 2.7W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DirectFET? Isometric MA
- Supplier Device Package: DIRECTFET? MA
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Package: DirectFET? Isometric MA |
Stock2,160 |
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Logic Level Gate | 30V | 15A | 6.6 mOhm @ 15A, 10V | 2.35V @ 25µA | 14nC @ 4.5V | 1380pF @ 15V | 2.7W | -55°C ~ 175°C (TJ) | Surface Mount | DirectFET? Isometric MA | DIRECTFET? MA |
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Infineon Technologies |
MOSFET N/P-CH 55V 4.7/3.4A 8SOIC
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.4A
- Rds On (Max) @ Id, Vgs: 50 mOhm @ 4.7A, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC
- Supplier Device Package: 8-SO
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Package: 8-SOIC |
Stock2,640 |
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Logic Level Gate | 55V | 4.7A, 3.4A | 50 mOhm @ 4.7A, 10V | 1V @ 250µA | 36nC @ 10V | 740pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SO |
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Infineon Technologies |
MOSFET 2P-CH 20V 3.9A 8TSSOP
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3.9A
- Rds On (Max) @ Id, Vgs: 51 mOhm @ 3.7A, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1090pF @ 15V
- Power - Max: 1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
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Package: 8-TSSOP (0.173", 4.40mm Width) |
Stock2,768 |
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Logic Level Gate | 20V | 3.9A | 51 mOhm @ 3.7A, 4.5V | 1.2V @ 250µA | 17nC @ 4.5V | 1090pF @ 15V | 1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
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Infineon Technologies |
MOSFET 2P-CH 12V 5.5A 8TSSOP
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 5.5A
- Rds On (Max) @ Id, Vgs: 25 mOhm @ 5.4A, 4.5V
- Vgs(th) (Max) @ Id: 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1984pF @ 6V
- Power - Max: 1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
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Package: 8-TSSOP (0.173", 4.40mm Width) |
Stock3,152 |
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Logic Level Gate | 12V | 5.5A | 25 mOhm @ 5.4A, 4.5V | 900mV @ 250µA | 22nC @ 4.5V | 1984pF @ 6V | 1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
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Infineon Technologies |
MOSFET 2N-CH 30V 4.6A 8TSSOP
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 4.6A
- Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.6A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 861pF @ 25V
- Power - Max: 1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
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Package: 8-TSSOP (0.173", 4.40mm Width) |
Stock4,704 |
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Logic Level Gate | 30V | 4.6A | 30 mOhm @ 4.6A, 10V | 2V @ 250µA | 9nC @ 4.5V | 861pF @ 25V | 1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |