Infineon Technologies Products - Transistors - FETs, MOSFETs - Arrays

MOSFET 2P-CH 55V 3.4A 8SOIC

• FET Type: MOSFET (Metal Oxide)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 3.4A
• Rds On (Max) @ Id, Vgs: 105mOhm @ 3.4A, 10V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V
• Power - Max: 2W
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

TRENCH <= 40V

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: -
• Rds On (Max) @ Id, Vgs: -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 8-PowerWDFN
• Supplier Device Package: PG-WHSON-8

MOSFET 2N-CH 30V 6.5A 8DSO-902

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
• Rds On (Max) @ Id, Vgs: 29mOhm @ 5.8A, 10V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
• Power - Max: 2W (Ta)
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: PG-DSO-8-902

MOSFET 2N-CH 40V 60A 8TDSON

• FET Type: MOSFET (Metal Oxide)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
• Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V
• Vgs(th) (Max) @ Id: 2V @ 13µA
• Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1136pF @ 25V
• Power - Max: 52W (Tc)
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerVDFN
• Supplier Device Package: PG-TDSON-8-57

MOSFET 2P-CH 30V 2.3A PQFN

• FET Type: MOSFET (Metal Oxide)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 2.3A
• Rds On (Max) @ Id, Vgs: 170mOhm @ 3.1A, 10V
• Vgs(th) (Max) @ Id: 2.4V @ 10µA
• Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V
• Power - Max: 1.4W
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 6-PowerVDFN
• Supplier Device Package: 6-PQFN Dual (2x2)

MOSFET

• FET Type: -
• FET Feature: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Rds On (Max) @ Id, Vgs: -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

SIC 4N-CH 1200V AG-EASY1B-2

• FET Type: Silicon Carbide (SiC)
• FET Feature: -
• Drain to Source Voltage (Vdss): 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
• Rds On (Max) @ Id, Vgs: 11.3mOhm @ 100A, 15V
• Vgs(th) (Max) @ Id: 5.55V @ 40mA
• Gate Charge (Qg) (Max) @ Vgs: 248nC @ 15V
• Input Capacitance (Ciss) (Max) @ Vds: 7360pF @ 800V
• Power - Max: -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: AG-EASY1B-2

MOSFET 2N-CH 40V 20A 8TDSON

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
• Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V
• Vgs(th) (Max) @ Id: 4V @ 30µA
• Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 25V
• Power - Max: 65W (Tc)
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount, Wettable Flank
• Package / Case: 8-PowerVDFN
• Supplier Device Package: PG-TDSON-8-10

MOSFET 2N-CH 40V 60A 8TDSON

• FET Type: MOSFET (Metal Oxide)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
• Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
• Vgs(th) (Max) @ Id: 2V @ 25µA
• Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2128pF @ 25V
• Power - Max: 75W (Tc)
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerVDFN
• Supplier Device Package: PG-TDSON-8-56

MOSFET 2N-CH 30V 11.5A 8TDSON

• FET Type: MOSFET (Metal Oxide)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 11.5A
• Rds On (Max) @ Id, Vgs: 7.2mOhm @ 20A, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 15V
• Power - Max: 57W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerVDFN
• Supplier Device Package: PG-TDSON-8-4

MOSFET 2N-CH 20V 10A 8DSO-902

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
• Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V
• Vgs(th) (Max) @ Id: 2.55V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 10V
• Power - Max: 2W (Ta)
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: PG-DSO-8-902

SIC 2N-CH 1200V AG-EASY1BM

• FET Type: Silicon Carbide (SiC)
• FET Feature: -
• Drain to Source Voltage (Vdss): 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C: 25A (Tj)
• Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V
• Vgs(th) (Max) @ Id: 5.55V @ 10mA
• Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V
• Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 800V
• Power - Max: -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: AG-EASY1BM

MOSFET

• FET Type: -
• FET Feature: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Rds On (Max) @ Id, Vgs: -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

SIC 4N-CH 1200V 45A AG-EASY1B

• FET Type: Silicon Carbide (SiC)
• FET Feature: -
• Drain to Source Voltage (Vdss): 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C: 45A (Tj)
• Rds On (Max) @ Id, Vgs: 22.5mOhm @ 50A, 15V
• Vgs(th) (Max) @ Id: 5.55V @ 20mA
• Gate Charge (Qg) (Max) @ Vgs: 124nC @ 15V
• Input Capacitance (Ciss) (Max) @ Vds: 3680pF @ 800V
• Power - Max: -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: AG-EASY1B-2

MOSFET 2N-CH 30V 4.9A 8-SOIC

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 4.9A
• Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
• Power - Max: 2W
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

MOSFET 2N-CH 30V 6.5A 8-SOIC

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 6.5A
• Rds On (Max) @ Id, Vgs: 29mOhm @ 5.8A, 10V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
• Power - Max: 2W
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

MOSFET 2N-CH 30V 3.5A 8DSO-902

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
• Rds On (Max) @ Id, Vgs: 100mOhm @ 2.2A, 10V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V
• Power - Max: 2W (Ta)
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: PG-DSO-8-902

MOSFET 2N-CH 200V 9.1A TO220-5

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 9.1A (Tc)
• Rds On (Max) @ Id, Vgs: 100mOhm @ 5.5A, 10V
• Vgs(th) (Max) @ Id: 4.9V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 25V
• Power - Max: 21W (Tc)
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-5 Full Pack, Formed Leads
• Supplier Device Package: TO-220-5 Full-Pak

SIC 2N-CH 1200V 375A AG-62MM

• FET Type: Silicon Carbide (SiC)
• FET Feature: -
• Drain to Source Voltage (Vdss): 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
• Rds On (Max) @ Id, Vgs: 2.83mOhm @ 375A, 15V
• Vgs(th) (Max) @ Id: 5.15V @ 168mA
• Gate Charge (Qg) (Max) @ Vgs: 1000nC @ 15V
• Input Capacitance (Ciss) (Max) @ Vds: 29800pF @ 25V
• Power - Max: -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: AG-62MM

SIC 1200V AG-EASY1B

• FET Type: Silicon Carbide (SiC)
• FET Feature: -
• Drain to Source Voltage (Vdss): 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C: -
• Rds On (Max) @ Id, Vgs: -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: -
• Operating Temperature: -
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: AG-EASY1B

SIC 6N-CH 1200V AG-HYBRIDD

• FET Type: Silicon Carbide (SiC)
• FET Feature: -
• Drain to Source Voltage (Vdss): 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C: 400A
• Rds On (Max) @ Id, Vgs: 3.7mOhm @ 400A, 15V
• Vgs(th) (Max) @ Id: 5.55V @ 240mA
• Gate Charge (Qg) (Max) @ Vgs: 1320nC @ 15V
• Input Capacitance (Ciss) (Max) @ Vds: 42500pF @ 600V
• Power - Max: -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: AG-HYBRIDD-2

MOSFET N/P-CH 25V 8-SOIC

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 25V
• Current - Continuous Drain (Id) @ 25°C: 3.5A, 2.3A
• Rds On (Max) @ Id, Vgs: 100mOhm @ 1A, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 15V
• Power - Max: 2W
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

MOSFET 2N-CH 30V 8A 8DSO

• FET Type: MOSFET (Metal Oxide)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 8A
• Rds On (Max) @ Id, Vgs: 15mOhm @ 9.3A, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V
• Power - Max: 1.4W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: PG-DSO-8

SIC 2N-CH 1200V AG-EASY1BM-2

• FET Type: Silicon Carbide (SiC)
• FET Feature: -
• Drain to Source Voltage (Vdss): 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C: 50A
• Rds On (Max) @ Id, Vgs: 23mOhm @ 50A, 15V
• Vgs(th) (Max) @ Id: 5.5V @ 20mA
• Gate Charge (Qg) (Max) @ Vgs: 125nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 3950pF @ 800V
• Power - Max: -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: AG-EASY1BM-2

MOSFET 2N-CH 55V 20A 8TDSON

• FET Type: MOSFET (Metal Oxide)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 20A
• Rds On (Max) @ Id, Vgs: 65mOhm @ 15A, 10V
• Vgs(th) (Max) @ Id: 2V @ 14µA
• Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V
• Power - Max: 43W
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerVDFN
• Supplier Device Package: PG-TDSON-8-4

SIC 2N-CH 1200V 200A MODULE

• FET Type: Silicon Carbide (SiC)
• FET Feature: -
• Drain to Source Voltage (Vdss): 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
• Rds On (Max) @ Id, Vgs: 5.63mOhm @ 200A, 15V
• Vgs(th) (Max) @ Id: 5.55V @ 80mA
• Gate Charge (Qg) (Max) @ Vgs: 496nC @ 15V
• Input Capacitance (Ciss) (Max) @ Vds: 14700pF @ 800V
• Power - Max: -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

MOSFET N/P-CH 55V 8-SOIC

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.4A
• Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V
• Power - Max: 2W
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

SIC 2N-CH 1200V AG-EASY1BM-2

• FET Type: Silicon Carbide (SiC)
• FET Feature: -
• Drain to Source Voltage (Vdss): 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
• Rds On (Max) @ Id, Vgs: 22.5mOhm @ 50A, 15V
• Vgs(th) (Max) @ Id: 5.55V @ 20mA
• Gate Charge (Qg) (Max) @ Vgs: 124nC @ 15V
• Input Capacitance (Ciss) (Max) @ Vds: 3680pF @ 800V
• Power - Max: -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: AG-EASY1BM-2