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Infineon Technologies |
MOSFET N/P-CH 20V 8TDSON
- FET Type: N and P-Channel Complementary
- FET Feature: Logic Level Gate, 2.5V Drive
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 5.1A, 3.2A
- Rds On (Max) @ Id, Vgs: 55 mOhm @ 5.1A, 4.5V
- Vgs(th) (Max) @ Id: 1.4V @ 110µA
- Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V
- Power - Max: 2.5W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: PG-TSDSON-8-FL
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Package: 8-PowerTDFN |
Stock2,048 |
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Logic Level Gate, 2.5V Drive | 20V | 5.1A, 3.2A | 55 mOhm @ 5.1A, 4.5V | 1.4V @ 110µA | 2.8nC @ 4.5V | 419pF @ 10V | 2.5W | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TSDSON-8-FL |
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Infineon Technologies |
MOSFET 2N-CH 8TDSON
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 20A
- Rds On (Max) @ Id, Vgs: 11.6 mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 15µA
- Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 25V
- Power - Max: 41W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PG-TDSON-8-4
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Package: 8-PowerVDFN |
Stock5,728 |
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Logic Level Gate | 40V | 20A | 11.6 mOhm @ 17A, 10V | 2.2V @ 15µA | 26nC @ 10V | 1990pF @ 25V | 41W | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerVDFN | PG-TDSON-8-4 |
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Infineon Technologies |
MOSFET 2P-CH 20V 4.7A 8SOIC
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4.7A
- Rds On (Max) @ Id, Vgs: 67 mOhm @ 4.7A, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs: 23.9nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 15V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: P-DSO-8
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock4,992 |
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Logic Level Gate | 20V | 4.7A | 67 mOhm @ 4.7A, 4.5V | 1.2V @ 25µA | 23.9nC @ 4.5V | 920pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | P-DSO-8 |
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Infineon Technologies |
MOSFET 2N-CH 30V 9.1A/11A 8-SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 9.1A, 11A
- Rds On (Max) @ Id, Vgs: 16.4 mOhm @ 9.1A, 10V
- Vgs(th) (Max) @ Id: 2.35V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 15V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock103,440 |
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Logic Level Gate | 30V | 9.1A, 11A | 16.4 mOhm @ 9.1A, 10V | 2.35V @ 25µA | 10nC @ 4.5V | 850pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET 2P-CH 20V 5.3A 8-SOIC
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 5.3A
- Rds On (Max) @ Id, Vgs: 58 mOhm @ 2.9A, 4.5V
- Vgs(th) (Max) @ Id: 700mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 15V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock2,090,124 |
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Logic Level Gate | 20V | 5.3A | 58 mOhm @ 2.9A, 4.5V | 700mV @ 250µA | 29nC @ 4.5V | 780pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET 2P-CH 20V 4.3A 8-SOIC
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4.3A
- Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.2A, 4.5V
- Vgs(th) (Max) @ Id: 700mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock49,428 |
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Logic Level Gate | 20V | 4.3A | 90 mOhm @ 2.2A, 4.5V | 700mV @ 250µA | 22nC @ 4.5V | 610pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET N/P-CH 30V 8SOIC
- FET Type: N and P-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: 29 mOhm @ 5.8A, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock444,180 |
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Standard | 30V | - | 29 mOhm @ 5.8A, 10V | 1V @ 250µA | 33nC @ 10V | 650pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET 2N-CH 20V 5.2A 8-SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 5.2A
- Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.6A, 4.5V
- Vgs(th) (Max) @ Id: 700mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock4,496 |
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Logic Level Gate | 20V | 5.2A | 50 mOhm @ 2.6A, 4.5V | 700mV @ 250µA | 20nC @ 4.5V | 660pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET N/P-CH 30V 8-SOIC
- FET Type: N and P-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5.8A, 4.3A
- Rds On (Max) @ Id, Vgs: 45 mOhm @ 5.8A, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
- Power - Max: 2.5W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock819,072 |
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Standard | 30V | 5.8A, 4.3A | 45 mOhm @ 5.8A, 10V | 1V @ 250µA | 25nC @ 10V | 520pF @ 25V | 2.5W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET 2N-CH 20V 7A 8-SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 7A
- Rds On (Max) @ Id, Vgs: 30 mOhm @ 7A, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 16V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock556,428 |
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Logic Level Gate | 20V | 7A | 30 mOhm @ 7A, 4.5V | 1.2V @ 250µA | 20nC @ 4.5V | 1340pF @ 16V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET 2N-CH 30V 7.8A/8.9A 8SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7.8A, 8.9A
- Rds On (Max) @ Id, Vgs: 21.8 mOhm @ 7.8A, 10V
- Vgs(th) (Max) @ Id: 2.25V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock617,328 |
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Logic Level Gate | 30V | 7.8A, 8.9A | 21.8 mOhm @ 7.8A, 10V | 2.25V @ 25µA | 6.9nC @ 4.5V | 600pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET 2N-CH 30V 7.6A/11A 8-SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7.6A, 11A
- Rds On (Max) @ Id, Vgs: 16.2 mOhm @ 7.6A, 10V
- Vgs(th) (Max) @ Id: 2.25V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 15V
- Power - Max: 1.4W, 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock26,796 |
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Logic Level Gate | 30V | 7.6A, 11A | 16.2 mOhm @ 7.6A, 10V | 2.25V @ 25µA | 11nC @ 4.5V | 910pF @ 15V | 1.4W, 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET 2P-CH 30V 3.6A 8-SOIC
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3.6A
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 1.8A, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock265,440 |
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Logic Level Gate | 30V | 3.6A | 100 mOhm @ 1.8A, 10V | 1V @ 250µA | 25nC @ 10V | 440pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET 2P-CH 20V 2.3A 8-SOIC
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 2.3A
- Rds On (Max) @ Id, Vgs: 250 mOhm @ 1A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock17,280 |
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Logic Level Gate | 20V | 2.3A | 250 mOhm @ 1A, 10V | 3V @ 250µA | 25nC @ 10V | 290pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET 2P-CH 30V 3.6A 8-SOIC
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3.6A
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 1.8A, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock453,648 |
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Logic Level Gate | 30V | 3.6A | 100 mOhm @ 1.8A, 10V | 1V @ 250µA | 25nC @ 10V | 440pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET 2N-CH 20V 4.5A PQFN
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4.5A
- Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.4A, 4.5V
- Vgs(th) (Max) @ Id: 1.1V @ 10µA
- Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V
- Power - Max: 1.5W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-VQFN
- Supplier Device Package: 6-PQFN (2x2)
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Package: 6-VQFN |
Stock39,000 |
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Logic Level Gate | 20V | 4.5A | 45 mOhm @ 3.4A, 4.5V | 1.1V @ 10µA | 3.1nC @ 4.5V | 310pF @ 10V | 1.5W | -55°C ~ 150°C (TJ) | Surface Mount | 6-VQFN | 6-PQFN (2x2) |
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Infineon Technologies |
MOSFET 2N-CH 30V 9.7A 8-SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 9.7A
- Rds On (Max) @ Id, Vgs: 15.5 mOhm @ 9.7A, 10V
- Vgs(th) (Max) @ Id: 2.35V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock484,608 |
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Logic Level Gate | 30V | 9.7A | 15.5 mOhm @ 9.7A, 10V | 2.35V @ 25µA | 9nC @ 4.5V | 760pF @ 15V | 2W | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET 2N-CH 30V 2.4A MICRO8
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 2.4A
- Rds On (Max) @ Id, Vgs: 135 mOhm @ 1.7A, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 25V
- Power - Max: 1.25W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Supplier Device Package: Micro8?
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Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
Stock91,512 |
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Logic Level Gate | 30V | 2.4A | 135 mOhm @ 1.7A, 10V | 1V @ 250µA | 12nC @ 10V | 210pF @ 25V | 1.25W | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Micro8? |
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Infineon Technologies |
MOSFET 2N-CH 30V 17A/31A TISON8
- FET Type: 2 N-Channel (Dual) Asymmetrical
- FET Feature: Logic Level Gate, 4.5V Drive
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 17A, 31A
- Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.9nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1025pF @ 15V
- Power - Max: 1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: PG-TISON-8
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Package: 8-PowerTDFN |
Stock42,804 |
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Logic Level Gate, 4.5V Drive | 30V | 17A, 31A | 5 mOhm @ 20A, 10V | 2V @ 250µA | 8.9nC @ 4.5V | 1025pF @ 15V | 1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TISON-8 |
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Infineon Technologies |
MOSFET 2N-CH 8TDSON
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 20A
- Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 22µA
- Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3050pF @ 25V
- Power - Max: 54W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PG-TDSON-8-4
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Package: 8-PowerVDFN |
Stock49,350 |
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Logic Level Gate | 40V | 20A | 8.2 mOhm @ 17A, 10V | 2.2V @ 22µA | 39nC @ 10V | 3050pF @ 25V | 54W | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerVDFN | PG-TDSON-8-4 |
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Infineon Technologies |
MOSFET 2N-CH 8TDSON
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
- Rds On (Max) @ Id, Vgs: 35 mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 2V @ 27µA
- Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V
- Power - Max: 65W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PG-TDSON-8-10
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Package: 8-PowerVDFN |
Stock39,828 |
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Logic Level Gate | 55V | 2A (Tc) | 35 mOhm @ 15A, 10V | 2V @ 27µA | 23nC @ 10V | 790pF @ 25V | 65W | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerVDFN | PG-TDSON-8-10 |
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Infineon Technologies |
MOSFET 2N-CH 30V 20A 8WISON
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate, 4.5V Drive
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Rds On (Max) @ Id, Vgs: 18 mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 15V
- Power - Max: 17W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PG-WISON-8
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Package: 8-PowerVDFN |
Stock46,122 |
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Logic Level Gate, 4.5V Drive | 30V | 20A (Tc) | 18 mOhm @ 9A, 10V | 2V @ 250µA | 2.6nC @ 4.5V | 360pF @ 15V | 17W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PG-WISON-8 |
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Infineon Technologies |
MOSFET N/P-CH 30V 2.3A/2A 6TSOP
- FET Type: N and P-Channel Complementary
- FET Feature: Logic Level Gate, 4.5V Drive
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 2.3A, 2A
- Rds On (Max) @ Id, Vgs: 57 mOhm @ 2.3A, 10V
- Vgs(th) (Max) @ Id: 2V @ 11µA
- Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 15V
- Power - Max: 500mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: PG-TSOP6-6
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Package: SOT-23-6 Thin, TSOT-23-6 |
Stock22,398 |
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Logic Level Gate, 4.5V Drive | 30V | 2.3A, 2A | 57 mOhm @ 2.3A, 10V | 2V @ 11µA | 1.5nC @ 10V | 275pF @ 15V | 500mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | PG-TSOP6-6 |
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Infineon Technologies |
MOSFET N/P-CH 30V 1.4A/1.5A TSOP
- FET Type: N and P-Channel Complementary
- FET Feature: Logic Level Gate, 4.5V Drive
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 1.4A, 1.5A
- Rds On (Max) @ Id, Vgs: 160 mOhm @ 1.4A, 10V
- Vgs(th) (Max) @ Id: 2V @ 3.7µA
- Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 282pF @ 15V
- Power - Max: 500mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: PG-TSOP6-6
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Package: SOT-23-6 Thin, TSOT-23-6 |
Stock68,490 |
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Logic Level Gate, 4.5V Drive | 30V | 1.4A, 1.5A | 160 mOhm @ 1.4A, 10V | 2V @ 3.7µA | 0.6nC @ 5V | 282pF @ 15V | 500mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | PG-TSOP6-6 |
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Infineon Technologies |
MOSFET 2N-CH 30V 6.4A/9.7A 8SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6.4A, 9.7A
- Rds On (Max) @ Id, Vgs: 22.6 mOhm @ 6.4A, 10V
- Vgs(th) (Max) @ Id: 2.25V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 15V
- Power - Max: 1.4W, 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock219,264 |
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Logic Level Gate | 30V | 6.4A, 9.7A | 22.6 mOhm @ 6.4A, 10V | 2.25V @ 25µA | 6.9nC @ 4.5V | 580pF @ 15V | 1.4W, 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET 2P-CH 12V 9.2A 8-SOIC
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 9.2A
- Rds On (Max) @ Id, Vgs: 17 mOhm @ 9.2A, 4.5V
- Vgs(th) (Max) @ Id: 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 57nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 3450pF @ 10V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock29,730 |
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Logic Level Gate | 12V | 9.2A | 17 mOhm @ 9.2A, 4.5V | 900mV @ 250µA | 57nC @ 4.5V | 3450pF @ 10V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET N/P-CH 30V 8-SOIC
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: 29 mOhm @ 5.8A, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
- Power - Max: 2.5W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock4,080 |
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Logic Level Gate | 30V | - | 29 mOhm @ 5.8A, 10V | 1V @ 250µA | 33nC @ 10V | 650pF @ 25V | 2.5W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET 2P-CH 20V 4.3A 8-SOIC
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4.3A
- Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.2A, 4.5V
- Vgs(th) (Max) @ Id: 700mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock144,000 |
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Logic Level Gate | 20V | 4.3A | 90 mOhm @ 2.2A, 4.5V | 700mV @ 250µA | 22nC @ 4.5V | 610pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |