Page 124 - Infineon Technologies Products - Transistors - FETs, MOSFETs - Single

IPU50R3K0CEBKMA1
Infineon Technologies

MOSFET N-CH 500V 1.7A TO-251

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock7,488
SPW47N60C3
Infineon Technologies

MOSFET N-CH 650V 47A TO-247

Package: TO-247-3

Stock1,142,304
IRF4905SPBF
Infineon Technologies

MOSFET P-CH 55V 42A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock30,000
IPL65R070C7AUMA1
Infineon Technologies

MOSFET N-CH 4VSON

Package: 4-PowerTSFN

Stock4,880
IRL40SC228
Infineon Technologies

MOSFET N-CH 40V 557A D2PAK-7

Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Stock5,200
IRL40SC209
Infineon Technologies

MOSFET N-CH 40V 478A D2PAK-7

Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Stock5,616
IPB017N10N5ATMA1
Infineon Technologies

MOSFET N-CH 100V 180A D2PAK-7

Package: TO-263-7, D2Pak (6 Leads + Tab)

Stock5,872
IPT012N08N5ATMA1
Infineon Technologies

MOSFET N-CH 80V 300A 8HSOF

Package: 8-PowerSFN

Stock5,168
IPB65R099C6ATMA1
Infineon Technologies

MOSFET N-CH 650V 38A TO263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,016
IPT020N10N3ATMA1
Infineon Technologies

MOSFET N-CH 100V 300A 8HSOF

Package: 8-PowerSFN

Stock7,888
IPB200N25N3 G
Infineon Technologies

MOSFET N-CH 250V 64A TO263-3

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock120,000
IPB025N10N3 G
Infineon Technologies

MOSFET N-CH 100V 180A TO263-7

Package: TO-263-7, D2Pak (6 Leads + Tab)

Stock3,824
IPB117N20NFDATMA1
Infineon Technologies

MOSFET N-CH 200V 84A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,760
IPT007N06NATMA1
Infineon Technologies

MOSFET N-CH 60V 300A 8HSOF

Package: 8-PowerSFN

Stock3,248
AUIRF7749L2TR
Infineon Technologies

MOSFET NCH 60V 36A DIRECTFET

Package: DirectFET? Isometric L8

Stock3,584
IPT60R102G7XTMA1
Infineon Technologies

MOSFET N-CH 650V 23A HSOF-8

Package: 8-PowerSFN

Stock7,584
IPB60R125CP
Infineon Technologies

MOSFET N-CH 600V 25A TO263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock15,324
IRF1324STRL-7PP
Infineon Technologies

MOSFET N-CH 24V 429A D2PAK-7

Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Stock3,536
IRF7799L2TRPBF
Infineon Technologies

MOSFET N-CH 250V DIRECTFET L8

Package: DirectFET? Isometric L8

Stock9,096
IRF7749L2TRPBF
Infineon Technologies

MOSFET N-CH 60V DIRECTFET L8

Package: DirectFET? Isometric L8

Stock6,480

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPU50R3K0CEBKMA1	Infineon Technologies	MOSFET N-CH 500V 1.7A TO-251 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 13V Vgs(th) (Max) @ Id: 3.5V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 84pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 18W (Tc) Rds On (Max) @ Id, Vgs: 3 Ohm @ 400mA, 13V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock7,488	MOSFET (Metal Oxide)	500V	1.7A (Tc)	13V	3.5V @ 30µA	4.3nC @ 10V	84pF @ 100V	±20V	-	18W (Tc)	3 Ohm @ 400mA, 13V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO251-3	TO-251-3 Short Leads, IPak, TO-251AA
SPW47N60C3	Infineon Technologies	MOSFET N-CH 650V 47A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 2.7mA Gate Charge (Qg) (Max) @ Vgs: 320nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 415W (Tc) Rds On (Max) @ Id, Vgs: 70 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock1,142,304	MOSFET (Metal Oxide)	650V	47A (Tc)	10V	3.9V @ 2.7mA	320nC @ 10V	6800pF @ 25V	±20V	-	415W (Tc)	70 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3	TO-247-3
IRF4905SPBF	Infineon Technologies	MOSFET P-CH 55V 42A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 170W (Tc) Rds On (Max) @ Id, Vgs: 20 mOhm @ 42A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock30,000	MOSFET (Metal Oxide)	55V	42A (Tc)	10V	4V @ 250µA	180nC @ 10V	3500pF @ 25V	±20V	-	170W (Tc)	20 mOhm @ 42A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPL65R070C7AUMA1	Infineon Technologies	MOSFET N-CH 4VSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 850µA Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 169W (Tc) Rds On (Max) @ Id, Vgs: 70 mOhm @ 8.5A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-VSON-4 Package / Case: 4-PowerTSFN	Package: 4-PowerTSFN	Stock4,880	MOSFET (Metal Oxide)	650V	28A (Tc)	10V	4V @ 850µA	64nC @ 10V	3020pF @ 100V	±20V	-	169W (Tc)	70 mOhm @ 8.5A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	PG-VSON-4	4-PowerTSFN
IRL40SC228	Infineon Technologies	MOSFET N-CH 40V 557A D2PAK-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 557A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 307nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 19680pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 416W (Tc) Rds On (Max) @ Id, Vgs: 0.65 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Stock5,200	MOSFET (Metal Oxide)	40V	557A (Tc)	4.5V, 10V	2.4V @ 250µA	307nC @ 4.5V	19680pF @ 25V	±20V	-	416W (Tc)	0.65 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (7-Lead)	TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
IRL40SC209	Infineon Technologies	MOSFET N-CH 40V 478A D2PAK-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 478A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 267nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 15270pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 0.8 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Stock5,616	MOSFET (Metal Oxide)	40V	478A (Tc)	4.5V, 10V	2.4V @ 250µA	267nC @ 4.5V	15270pF @ 25V	±20V	-	375W (Tc)	0.8 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (7-Lead)	TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
IPB017N10N5ATMA1	Infineon Technologies	MOSFET N-CH 100V 180A D2PAK-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 279µA Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 15600pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7 Package / Case: TO-263-7, D2Pak (6 Leads + Tab)	Package: TO-263-7, D2Pak (6 Leads + Tab)	Stock5,872	MOSFET (Metal Oxide)	100V	180A (Tc)	6V, 10V	3.8V @ 279µA	210nC @ 10V	15600pF @ 50V	±20V	-	375W (Tc)	1.7 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-7	TO-263-7, D2Pak (6 Leads + Tab)
IPT012N08N5ATMA1	Infineon Technologies	MOSFET N-CH 80V 300A 8HSOF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 280µA Gate Charge (Qg) (Max) @ Vgs: 223nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 17000pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 1.2 mOhm @ 150A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8-1 Package / Case: 8-PowerSFN	Package: 8-PowerSFN	Stock5,168	MOSFET (Metal Oxide)	80V	300A (Tc)	6V, 10V	3.8V @ 280µA	223nC @ 10V	17000pF @ 40V	±20V	-	375W (Tc)	1.2 mOhm @ 150A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-HSOF-8-1	8-PowerSFN
IPB65R099C6ATMA1	Infineon Technologies	MOSFET N-CH 650V 38A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1.2mA Gate Charge (Qg) (Max) @ Vgs: 127nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2780pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 278W (Tc) Rds On (Max) @ Id, Vgs: 99 mOhm @ 12.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,016	MOSFET (Metal Oxide)	650V	38A (Tc)	10V	3.5V @ 1.2mA	127nC @ 10V	2780pF @ 100V	±20V	-	278W (Tc)	99 mOhm @ 12.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPT020N10N3ATMA1	Infineon Technologies	MOSFET N-CH 100V 300A 8HSOF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.5V @ 272µA Gate Charge (Qg) (Max) @ Vgs: 156nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 2 mOhm @ 150A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8-1 Package / Case: 8-PowerSFN	Package: 8-PowerSFN	Stock7,888	MOSFET (Metal Oxide)	100V	300A (Tc)	6V, 10V	3.5V @ 272µA	156nC @ 10V	11200pF @ 50V	±20V	-	375W (Tc)	2 mOhm @ 150A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-HSOF-8-1	8-PowerSFN
IPB200N25N3 G	Infineon Technologies	MOSFET N-CH 250V 64A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 270µA Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7100pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 20 mOhm @ 64A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock120,000	MOSFET (Metal Oxide)	250V	64A (Tc)	10V	4V @ 270µA	86nC @ 10V	7100pF @ 100V	±20V	-	300W (Tc)	20 mOhm @ 64A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPB025N10N3 G	Infineon Technologies	MOSFET N-CH 100V 180A TO263-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.5V @ 275µA Gate Charge (Qg) (Max) @ Vgs: 206nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14800pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7 Package / Case: TO-263-7, D2Pak (6 Leads + Tab)	Package: TO-263-7, D2Pak (6 Leads + Tab)	Stock3,824	MOSFET (Metal Oxide)	100V	180A (Tc)	6V, 10V	3.5V @ 275µA	206nC @ 10V	14800pF @ 50V	±20V	-	300W (Tc)	2.5 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-7	TO-263-7, D2Pak (6 Leads + Tab)
IPB117N20NFDATMA1	Infineon Technologies	MOSFET N-CH 200V 84A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 84A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 270µA Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6650pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 11.7 mOhm @ 84A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-3 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,760	MOSFET (Metal Oxide)	200V	84A (Tc)	10V	4V @ 270µA	87nC @ 10V	6650pF @ 100V	±20V	-	300W (Tc)	11.7 mOhm @ 84A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPT007N06NATMA1	Infineon Technologies	MOSFET N-CH 60V 300A 8HSOF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.3V @ 280µA Gate Charge (Qg) (Max) @ Vgs: 216nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 16000pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 0.75 mOhm @ 150A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8-1 Package / Case: 8-PowerSFN	Package: 8-PowerSFN	Stock3,248	MOSFET (Metal Oxide)	60V	300A (Tc)	6V, 10V	3.3V @ 280µA	216nC @ 10V	16000pF @ 30V	±20V	-	375W (Tc)	0.75 mOhm @ 150A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-HSOF-8-1	8-PowerSFN
AUIRF7749L2TR	Infineon Technologies	MOSFET NCH 60V 36A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 345A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 275nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10655pF @ 25V Vgs (Max): 60V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 341W (Tc) Rds On (Max) @ Id, Vgs: 1.5 mOhm @ 120A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET L8 Package / Case: DirectFET? Isometric L8	Package: DirectFET? Isometric L8	Stock3,584	MOSFET (Metal Oxide)	60V	36A (Ta), 345A (Tc)	10V	4V @ 250µA	275nC @ 10V	10655pF @ 25V	60V	-	3.8W (Ta), 341W (Tc)	1.5 mOhm @ 120A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DIRECTFET L8	DirectFET? Isometric L8
IPT60R102G7XTMA1	Infineon Technologies	MOSFET N-CH 650V 23A HSOF-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 390µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1320pF @ 400V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 141W (Tc) Rds On (Max) @ Id, Vgs: 102 mOhm @ 7.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8 Package / Case: 8-PowerSFN	Package: 8-PowerSFN	Stock7,584	MOSFET (Metal Oxide)	650V	23A (Tc)	10V	4V @ 390µA	34nC @ 10V	1320pF @ 400V	±20V	-	141W (Tc)	102 mOhm @ 7.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-HSOF-8	8-PowerSFN
IPB60R125CP	Infineon Technologies	MOSFET N-CH 600V 25A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1.1mA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 125 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock15,324	MOSFET (Metal Oxide)	600V	25A (Tc)	10V	3.5V @ 1.1mA	70nC @ 10V	2500pF @ 100V	±20V	-	208W (Tc)	125 mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF1324STRL-7PP	Infineon Technologies	MOSFET N-CH 24V 429A D2PAK-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 252nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7700pF @ 19V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 1 mOhm @ 160A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Stock3,536	MOSFET (Metal Oxide)	24V	240A (Tc)	10V	4V @ 250µA	252nC @ 10V	7700pF @ 19V	±20V	-	300W (Tc)	1 mOhm @ 160A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (7-Lead)	TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
IRF7799L2TRPBF	Infineon Technologies	MOSFET N-CH 250V DIRECTFET L8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 375A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6714pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 4.3W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 38 mOhm @ 21A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET L8 Package / Case: DirectFET? Isometric L8	Package: DirectFET? Isometric L8	Stock9,096	MOSFET (Metal Oxide)	250V	375A (Tc)	10V	5V @ 250µA	165nC @ 10V	6714pF @ 25V	±30V	-	4.3W (Ta), 125W (Tc)	38 mOhm @ 21A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DIRECTFET L8	DirectFET? Isometric L8
IRF7749L2TRPBF	Infineon Technologies	MOSFET N-CH 60V DIRECTFET L8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 375A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 12320pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.3W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 1.5 mOhm @ 120A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET L8 Package / Case: DirectFET? Isometric L8	Package: DirectFET? Isometric L8	Stock6,480	MOSFET (Metal Oxide)	60V	33A (Ta), 375A (Tc)	10V	4V @ 250µA	300nC @ 10V	12320pF @ 25V	±20V	-	3.3W (Ta), 125W (Tc)	1.5 mOhm @ 120A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DIRECTFET L8	DirectFET? Isometric L8
IRL7472L1TRPBF	Infineon Technologies	MOSFET N-CH 40V 375A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 375A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 330nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 20082pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 341W (Tc) Rds On (Max) @ Id, Vgs: 0.59 mOhm @ 195A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET L8 Package / Case: DirectFET? Isometric L8	Package: DirectFET? Isometric L8	Stock3,408	MOSFET (Metal Oxide)	40V	375A (Tc)	4.5V, 10V	2.5V @ 250µA	330nC @ 4.5V	20082pF @ 25V	±20V	-	3.8W (Ta), 341W (Tc)	0.59 mOhm @ 195A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DIRECTFET L8	DirectFET? Isometric L8
IPL65R130C7AUMA1	Infineon Technologies	MOSFET N-CH 650V 15A 4VSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 440µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1670pF @ 400V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 102W (Tc) Rds On (Max) @ Id, Vgs: 130 mOhm @ 4.4A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-VSON-4 Package / Case: 4-PowerTSFN	Package: 4-PowerTSFN	Stock5,408	MOSFET (Metal Oxide)	650V	15A (Tc)	10V	4V @ 440µA	35nC @ 10V	1670pF @ 400V	±20V	-	102W (Tc)	130 mOhm @ 4.4A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	PG-VSON-4	4-PowerTSFN
IPB020NE7N3 G	Infineon Technologies	MOSFET N-CH 75V 120A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.8V @ 273µA Gate Charge (Qg) (Max) @ Vgs: 206nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 37.5V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 2 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,840	MOSFET (Metal Oxide)	75V	120A (Tc)	10V	3.8V @ 273µA	206nC @ 10V	14400pF @ 37.5V	±20V	-	300W (Tc)	2 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPB60R125C6	Infineon Technologies	MOSFET N-CH 600V 30A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 960µA Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2127pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 219W (Tc) Rds On (Max) @ Id, Vgs: 125 mOhm @ 14.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock15,852	MOSFET (Metal Oxide)	600V	30A (Tc)	10V	3.5V @ 960µA	96nC @ 10V	2127pF @ 100V	±20V	-	219W (Tc)	125 mOhm @ 14.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF6718L2TRPBF	Infineon Technologies	MOSFET N-CH 25V 61A DIRECTFET L6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 61A (Ta), 270A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 96nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 6500pF @ 13V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4.3W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 0.7 mOhm @ 61A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET L6 Package / Case: DirectFET? Isometric L6	Package: DirectFET? Isometric L6	Stock5,760	MOSFET (Metal Oxide)	25V	61A (Ta), 270A (Tc)	4.5V, 10V	2.35V @ 150µA	96nC @ 4.5V	6500pF @ 13V	±20V	-	4.3W (Ta), 83W (Tc)	0.7 mOhm @ 61A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DIRECTFET L6	DirectFET? Isometric L6
IPT60R125G7XTMA1	Infineon Technologies	MOSFET N-CH 650V 20A HSOF-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 320µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 400V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 120W (Tc) Rds On (Max) @ Id, Vgs: 125 mOhm @ 6.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8 Package / Case: 8-PowerSFN	Package: 8-PowerSFN	Stock6,032	MOSFET (Metal Oxide)	650V	20A (Tc)	10V	4V @ 320µA	27nC @ 10V	1080pF @ 400V	±20V	-	120W (Tc)	125 mOhm @ 6.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-HSOF-8	8-PowerSFN
IPB50R140CP	Infineon Technologies	MOSFET N-CH 550V 23A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 550V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 930µA Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2540pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 192W (Tc) Rds On (Max) @ Id, Vgs: 140 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock109,692	MOSFET (Metal Oxide)	550V	23A (Tc)	10V	3.5V @ 930µA	64nC @ 10V	2540pF @ 100V	±20V	-	192W (Tc)	140 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF7749L1TRPBF	Infineon Technologies	MOSFET N-CH 60V 33A DIRECTFETL8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 200A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 12320pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.3W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 1.5 mOhm @ 120A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET L8 Package / Case: DirectFET? Isometric L8	Package: DirectFET? Isometric L8	Stock3,488	MOSFET (Metal Oxide)	60V	33A (Ta), 200A (Tc)	10V	4V @ 250µA	300nC @ 10V	12320pF @ 25V	±20V	-	3.3W (Ta), 125W (Tc)	1.5 mOhm @ 120A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DIRECTFET L8	DirectFET? Isometric L8