Page 150 - Infineon Technologies Products - Transistors - FETs, MOSFETs - Single

BSO080P03NS3GXUMA1
Infineon Technologies

MOSFET P-CH 30V 12A 8DSO

Package: 8-SOIC (0.154", 3.90mm Width)

Stock2,528
IRF7821PBF
Infineon Technologies

MOSFET N-CH 30V 13.6A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock17,628
BSC094N06LS5ATMA1
Infineon Technologies

DIFFERENTIATED MOSFETS

Package: -

Stock7,296
IPD60R400CEAUMA1
Infineon Technologies

CONSUMER

Package: -

Stock6,592
BSO080P03NS3EGXUMA1
Infineon Technologies

MOSFET P-CH 30V 12A 8DSO

Package: 8-SOIC (0.154", 3.90mm Width)

Stock2,480
IRF7241PBF
Infineon Technologies

MOSFET P-CH 40V 6.2A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock148,740
BSF035NE2LQXUMA1
Infineon Technologies

MOSFET N-CH 25V 22A 2WDSON

Package: 3-WDSON

Stock6,080
IPD60R460CEAUMA1
Infineon Technologies

CONSUMER

Package: -

Stock6,336
IPD60R460CEATMA1
Infineon Technologies

MOSFET N-CH 600V TO-252-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,072
IPD50N06S4L08ATMA2
Infineon Technologies

MOSFET N-CH 60V 50A TO252-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,280
IPD30N06S223ATMA2
Infineon Technologies

MOSFET N-CH 55V 30A TO252-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,792
IPN60R600P7SATMA1
Infineon Technologies

CONSUMER

Package: -

Stock6,560
SIPC05N60C3X1SA1
Infineon Technologies

TRANSISTOR N-CH

Package: -

Stock3,408
IPD65R1K4C6ATMA1
Infineon Technologies

MOSFET N-CH TO252-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,032
IPA50R650CEXKSA2
Infineon Technologies

MOSFET N-CH 500V 4.6A TO-220FP

Package: TO-220-3 Full Pack

Stock4,512
IPSA70R600CEAKMA1
Infineon Technologies

MOSFET COOLMOS 700V TO251-3

Package: TO-251-3 Stub Leads, IPak

Stock3,712
IPS70R600CEAKMA2
Infineon Technologies

CONSUMER

Package: -

Stock6,544
IPA60R1K0CEXKSA1
Infineon Technologies

MOSFET N-CH 600V TO220-3

Package: TO-220-3 Full Pack

Stock3,872
BSO040N03MSGXUMA1
Infineon Technologies

MOSFET N-CH 30V 16A 8DSO

Package: 8-SOIC (0.154", 3.90mm Width)

Stock59,700
BSO200P03SHXUMA1
Infineon Technologies

MOSFET P-CH 30V 7.4A 8DSO

Package: 8-SOIC (0.154", 3.90mm Width)

Stock2,240

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
BSO080P03NS3GXUMA1	Infineon Technologies	MOSFET P-CH 30V 12A 8DSO FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.1V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6750pF @ 15V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 8 mOhm @ 14.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-DSO-8 Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock2,528	MOSFET (Metal Oxide)	30V	12A (Ta)	6V, 10V	3.1V @ 150µA	81nC @ 10V	6750pF @ 15V	±25V	-	1.6W (Ta)	8 mOhm @ 14.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-DSO-8	8-SOIC (0.154", 3.90mm Width)
IRF7821PBF	Infineon Technologies	MOSFET N-CH 30V 13.6A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 155°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock17,628	MOSFET (Metal Oxide)	30V	13.6A (Ta)	4.5V, 10V	1V @ 250µA	14nC @ 4.5V	1010pF @ 15V	±20V	-	2.5W (Ta)	9.1 mOhm @ 13A, 10V	-55°C ~ 155°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
BSC094N06LS5ATMA1	Infineon Technologies	DIFFERENTIATED MOSFETS FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock7,296	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPD60R400CEAUMA1	Infineon Technologies	CONSUMER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock6,592	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BSO080P03NS3EGXUMA1	Infineon Technologies	MOSFET P-CH 30V 12A 8DSO FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.1V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6750pF @ 15V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 8 mOhm @ 14.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-DSO-8 Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock2,480	MOSFET (Metal Oxide)	30V	12A (Ta)	6V, 10V	3.1V @ 150µA	81nC @ 10V	6750pF @ 15V	±25V	-	1.6W (Ta)	8 mOhm @ 14.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-DSO-8	8-SOIC (0.154", 3.90mm Width)
IRF7241PBF	Infineon Technologies	MOSFET P-CH 40V 6.2A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3220pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 41 mOhm @ 6.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock148,740	MOSFET (Metal Oxide)	40V	6.2A (Ta)	4.5V, 10V	3V @ 250µA	80nC @ 10V	3220pF @ 25V	±20V	-	2.5W (Ta)	41 mOhm @ 6.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
BSF035NE2LQXUMA1	Infineon Technologies	MOSFET N-CH 25V 22A 2WDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 69A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1862pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.2W (Ta), 28W (Tc) Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 30A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: MG-WDSON-2, CanPAK M? Package / Case: 3-WDSON	Package: 3-WDSON	Stock6,080	MOSFET (Metal Oxide)	25V	22A (Ta), 69A (Tc)	4.5V, 10V	2V @ 250µA	25nC @ 10V	1862pF @ 12V	±20V	-	2.2W (Ta), 28W (Tc)	3.5 mOhm @ 30A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	MG-WDSON-2, CanPAK M?	3-WDSON
IPD60R460CEAUMA1	Infineon Technologies	CONSUMER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock6,336	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPD60R460CEATMA1	Infineon Technologies	MOSFET N-CH 600V TO-252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 9.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 280µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 74W (Tc) Rds On (Max) @ Id, Vgs: 460 mOhm @ 3.4A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,072	MOSFET (Metal Oxide)	600V	9.1A (Tc)	10V	3.5V @ 280µA	28nC @ 10V	620pF @ 100V	±20V	-	74W (Tc)	460 mOhm @ 3.4A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	TO-252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
IPD50N06S4L08ATMA2	Infineon Technologies	MOSFET N-CH 60V 50A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 35µA Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4780pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 71W (Tc) Rds On (Max) @ Id, Vgs: 7.8 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-11 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,280	MOSFET (Metal Oxide)	60V	50A (Tc)	4.5V, 10V	2.2V @ 35µA	64nC @ 10V	4780pF @ 25V	±16V	-	71W (Tc)	7.8 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3-11	TO-252-3, DPak (2 Leads + Tab), SC-63
IPD30N06S223ATMA2	Infineon Technologies	MOSFET N-CH 55V 30A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 901pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 23 mOhm @ 21A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-11 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,792	MOSFET (Metal Oxide)	55V	30A (Tc)	10V	4V @ 50µA	32nC @ 10V	901pF @ 25V	±20V	-	100W (Tc)	23 mOhm @ 21A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3-11	TO-252-3, DPak (2 Leads + Tab), SC-63
IPN60R600P7SATMA1	Infineon Technologies	CONSUMER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock6,560	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SIPC05N60C3X1SA1	Infineon Technologies	TRANSISTOR N-CH FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock3,408	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPD65R1K4C6ATMA1	Infineon Technologies	MOSFET N-CH TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 28W (Tc) Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,032	MOSFET (Metal Oxide)	650V	3.2A (Tc)	10V	3.5V @ 100µA	10.5nC @ 10V	225pF @ 100V	±20V	-	28W (Tc)	1.4 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
IPA50R650CEXKSA2	Infineon Technologies	MOSFET N-CH 500V 4.6A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 13V Vgs(th) (Max) @ Id: 3.5V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 342pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 27.2W (Tc) Rds On (Max) @ Id, Vgs: 650 mOhm @ 1.8A, 13V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Full Pack Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock4,512	MOSFET (Metal Oxide)	500V	4.6A (Tc)	13V	3.5V @ 150µA	15nC @ 10V	342pF @ 100V	±20V	-	27.2W (Tc)	650 mOhm @ 1.8A, 13V	-40°C ~ 150°C (TJ)	Through Hole	TO-220 Full Pack	TO-220-3 Full Pack
IPSA70R600CEAKMA1	Infineon Technologies	MOSFET COOLMOS 700V TO251-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 210µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 474pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 86W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 1A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Stub Leads, IPak	Package: TO-251-3 Stub Leads, IPak	Stock3,712	MOSFET (Metal Oxide)	700V	10.5A (Tc)	10V	3.5V @ 210µA	22nC @ 10V	474pF @ 100V	±20V	-	86W (Tc)	600 mOhm @ 1A, 10V	-40°C ~ 150°C (TJ)	Through Hole	PG-TO251-3	TO-251-3 Stub Leads, IPak
IPS70R600CEAKMA2	Infineon Technologies	CONSUMER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock6,544	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPA60R1K0CEXKSA1	Infineon Technologies	MOSFET N-CH 600V TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 130µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 100V Vgs (Max): ±20V FET Feature: Super Junction Power Dissipation (Max): 26W (Tc) Rds On (Max) @ Id, Vgs: 1 Ohm @ 1.5A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock3,872	MOSFET (Metal Oxide)	600V	6.8A (Tc)	10V	3.5V @ 130µA	13nC @ 10V	280pF @ 100V	±20V	Super Junction	26W (Tc)	1 Ohm @ 1.5A, 10V	-40°C ~ 150°C (TJ)	Through Hole	PG-TO220 Full Pack	TO-220-3 Full Pack
BSO040N03MSGXUMA1	Infineon Technologies	MOSFET N-CH 30V 16A 8DSO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 73nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5700pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.56W (Ta) Rds On (Max) @ Id, Vgs: 4 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-DSO-8 Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock59,700	MOSFET (Metal Oxide)	30V	16A (Ta)	4.5V, 10V	2V @ 250µA	73nC @ 10V	5700pF @ 15V	±20V	-	1.56W (Ta)	4 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-DSO-8	8-SOIC (0.154", 3.90mm Width)
BSO200P03SHXUMA1	Infineon Technologies	MOSFET P-CH 30V 7.4A 8DSO FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 1.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2330pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 1.56W (Ta) Rds On (Max) @ Id, Vgs: 20 mOhm @ 9.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-DSO-8 Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock2,240	MOSFET (Metal Oxide)	30V	7.4A (Ta)	10V	1.5V @ 100µA	54nC @ 10V	2330pF @ 25V	±25V	-	1.56W (Ta)	20 mOhm @ 9.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-DSO-8	8-SOIC (0.154", 3.90mm Width)
IPD80R2K8CEATMA1	Infineon Technologies	MOSFET N-CH 800V 1.9A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 120µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 42W (Tc) Rds On (Max) @ Id, Vgs: 2.8 Ohm @ 1.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,056	MOSFET (Metal Oxide)	800V	1.9A (Tc)	10V	3.9V @ 120µA	12nC @ 10V	290pF @ 100V	±20V	-	42W (Tc)	2.8 Ohm @ 1.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
IRFH7921TRPBF	Infineon Technologies	MOSFET N-CH 30V 15A PQFN56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1210pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta) Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PQFN (5x6) Single Die Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock8,904	MOSFET (Metal Oxide)	30V	15A (Ta), 34A (Tc)	4.5V, 10V	2.35V @ 25µA	14nC @ 4.5V	1210pF @ 15V	±20V	-	3.1W (Ta)	8.5 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PQFN (5x6) Single Die	8-PowerVDFN
IPU60R1K4C6AKMA1	Infineon Technologies	MOSFET N-CH 600V TO-251-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 90µA Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 28.4W (Tc) Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 1.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock3,008	MOSFET (Metal Oxide)	600V	3.2A (Tc)	10V	3.5V @ 90µA	9.4nC @ 10V	200pF @ 100V	±20V	-	28.4W (Tc)	1.4 Ohm @ 1.1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO251	TO-251-3 Short Leads, IPak, TO-251AA
BSC0504NSIATMA1	Infineon Technologies	MOSFET N-CH 30V 21A TDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 72A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock2,272	MOSFET (Metal Oxide)	30V	21A (Ta), 72A (Tc)	4.5V, 10V	2V @ 250µA	15nC @ 10V	960pF @ 15V	±20V	-	2.5W (Ta), 30W (Tc)	3.7 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8	8-PowerTDFN
BSZ0703LSATMA1	Infineon Technologies	MOSFET N-CH 8TDSON FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock2,576	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BSC032NE2LSATMA1	Infineon Technologies	MOSFET N-CH 25V 22A TDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 84A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 78W (Tc) Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock4,944	MOSFET (Metal Oxide)	25V	22A (Ta), 84A (Tc)	4.5V, 10V	2V @ 250µA	16nC @ 10V	1200pF @ 12V	±20V	-	2.8W (Ta), 78W (Tc)	3.2 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8	8-PowerTDFN
IPS65R650CEAKMA1	Infineon Technologies	MOSFET COOLMOS 650V TO251-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 10.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 210µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 86W (Tc) Rds On (Max) @ Id, Vgs: 650 mOhm @ 2.1A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Stub Leads, IPak	Package: TO-251-3 Stub Leads, IPak	Stock7,952	MOSFET (Metal Oxide)	700V	10.1A (Tc)	10V	3.5V @ 210µA	23nC @ 10V	440pF @ 100V	±20V	-	86W (Tc)	650 mOhm @ 2.1A, 10V	-40°C ~ 150°C (TJ)	Through Hole	PG-TO251-3	TO-251-3 Stub Leads, IPak
IPC90N04S5L3R3ATMA1	Infineon Technologies	MOSFET N-CH 20V 40V 8TDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 23µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2145pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 62W (Tc) Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 45A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-34 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock3,408	MOSFET (Metal Oxide)	40V	90A (Tc)	4.5V, 10V	2V @ 23µA	40nC @ 10V	2145pF @ 25V	±16V	-	62W (Tc)	3.3 mOhm @ 45A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TDSON-8-34	8-PowerTDFN