Page 158 - Infineon Technologies Products - Transistors - FETs, MOSFETs - Single

IPD65R600C6ATMA1
Infineon Technologies

LOW POWER_LEGACY

Package: -

Stock2,544
IPD65R600E6ATMA1
Infineon Technologies

MOSFET N-CH 650V 7.3A TO252-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,048
IPD65R600E6BTMA1
Infineon Technologies

MOSFET N-CH 650V 7.3A TO252-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,552
IPC80N04S403ATMA1
Infineon Technologies

MOSFET N-CH 8TDSON

Package: 8-PowerVDFN

Stock5,024
IRFR3411PBF
Infineon Technologies

MOSFET N-CH 100V 32A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,736
IPAN70R600P7SXKSA1
Infineon Technologies

CONSUMER

Package: -

Stock3,632
IPI80P04P4L06AKSA1
Infineon Technologies

MOSFET P-CH TO262-3

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock7,312
IPI80P04P407AKSA1
Infineon Technologies

MOSFET P-CH TO262-3

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock6,416
IPB80P04P4L06ATMA1
Infineon Technologies

MOSFET P-CH TO263-3

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,216
IPB80P04P407ATMA1
Infineon Technologies

MOSFET P-CH TO263-3

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,984
IRF7834TRPBF
Infineon Technologies

MOSFET N-CH 30V 19A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock537,672
IPP60R750E6XKSA1
Infineon Technologies

MOSFET N-CH 600V 5.7A TO220

Package: TO-220-3

Stock2,480
AUIRF7647S2TR
Infineon Technologies

MOSFET N-CH 100V 5.9A DIRECTFET

Package: DirectFET? Isometric SC

Stock7,264
IRLR3802PBF
Infineon Technologies

MOSFET N-CH 12V 84A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,432
IPI80N06S407AKSA2
Infineon Technologies

MOSFET N-CH 60V 80A TO262-3

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock7,776
IPI80N06S4L07AKSA2
Infineon Technologies

MOSFET N-CH 60V 80A TO262-3

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock3,504
IPD90N06S4L05ATMA2
Infineon Technologies

MOSFET N-CH 60V 90A TO252-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,152
IRFH5110TRPBF
Infineon Technologies

MOSFET N-CH 100V 11A 8-PQFN

Package: 8-PowerVDFN

Stock7,552
BSZ0501NSIATMA1
Infineon Technologies

MOSFET N-CH 30V 25A 8SON

Package: 8-PowerTDFN

Stock5,024
BSC0702LSATMA1
Infineon Technologies

MOSFET N-CH 8TDSON

Package: -

Stock2,736

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPD65R600C6ATMA1	Infineon Technologies	LOW POWER_LEGACY FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock2,544	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPD65R600E6ATMA1	Infineon Technologies	MOSFET N-CH 650V 7.3A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 210µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 63W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 2.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,048	MOSFET (Metal Oxide)	650V	7.3A (Tc)	10V	3.5V @ 210µA	23nC @ 10V	440pF @ 100V	±20V	-	63W (Tc)	600 mOhm @ 2.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
IPD65R600E6BTMA1	Infineon Technologies	MOSFET N-CH 650V 7.3A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 210µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 63W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 2.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,552	MOSFET (Metal Oxide)	650V	7.3A (Tc)	10V	3.5V @ 210µA	23nC @ 10V	440pF @ 100V	±20V	-	63W (Tc)	600 mOhm @ 2.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
IPC80N04S403ATMA1	Infineon Technologies	MOSFET N-CH 8TDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 60µA Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5720pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-23 Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock5,024	MOSFET (Metal Oxide)	40V	80A (Tc)	10V	4V @ 60µA	71nC @ 10V	5720pF @ 25V	±20V	-	100W (Tc)	3.3 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TDSON-8-23	8-PowerVDFN
IRFR3411PBF	Infineon Technologies	MOSFET N-CH 100V 32A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1960pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 130W (Tc) Rds On (Max) @ Id, Vgs: 44 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,736	MOSFET (Metal Oxide)	100V	32A (Tc)	10V	4V @ 250µA	71nC @ 10V	1960pF @ 25V	±20V	-	130W (Tc)	44 mOhm @ 16A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IPAN70R600P7SXKSA1	Infineon Technologies	CONSUMER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock3,632	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPI80P04P4L06AKSA1	Infineon Technologies	MOSFET P-CH TO262-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 104nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6580pF @ 25V Vgs (Max): +5V, -16V FET Feature: - Power Dissipation (Max): 88W (Tc) Rds On (Max) @ Id, Vgs: 6.7 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3-1 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock7,312	MOSFET (Metal Oxide)	40V	80A (Tc)	4.5V, 10V	2.2V @ 150µA	104nC @ 10V	6580pF @ 25V	+5V, -16V	-	88W (Tc)	6.7 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO262-3-1	TO-262-3 Long Leads, I2Pak, TO-262AA
IPI80P04P407AKSA1	Infineon Technologies	MOSFET P-CH TO262-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 89nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6085pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 88W (Tc) Rds On (Max) @ Id, Vgs: 7.7 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3-1 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock6,416	MOSFET (Metal Oxide)	40V	80A (Tc)	10V	4V @ 150µA	89nC @ 10V	6085pF @ 25V	±20V	-	88W (Tc)	7.7 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO262-3-1	TO-262-3 Long Leads, I2Pak, TO-262AA
IPB80P04P4L06ATMA1	Infineon Technologies	MOSFET P-CH TO263-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 104nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6580pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 88W (Tc) Rds On (Max) @ Id, Vgs: 6.4 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,216	MOSFET (Metal Oxide)	40V	80A (Tc)	4.5V, 10V	2.2V @ 150µA	104nC @ 10V	6580pF @ 25V	±16V	-	88W (Tc)	6.4 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPB80P04P407ATMA1	Infineon Technologies	MOSFET P-CH TO263-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 89nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6085pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 88W (Tc) Rds On (Max) @ Id, Vgs: 7.4 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,984	MOSFET (Metal Oxide)	40V	80A (Tc)	10V	4V @ 150µA	89nC @ 10V	6085pF @ 25V	±20V	-	88W (Tc)	7.4 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF7834TRPBF	Infineon Technologies	MOSFET N-CH 30V 19A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 19A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3710pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 19A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock537,672	MOSFET (Metal Oxide)	30V	19A (Ta)	4.5V, 10V	2.25V @ 250µA	44nC @ 4.5V	3710pF @ 15V	±20V	-	2.5W (Ta)	4.5 mOhm @ 19A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IPP60R750E6XKSA1	Infineon Technologies	MOSFET N-CH 600V 5.7A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 170µA Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 373pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 48W (Tc) Rds On (Max) @ Id, Vgs: 750 mOhm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock2,480	MOSFET (Metal Oxide)	600V	5.7A (Tc)	10V	3.5V @ 170µA	17.2nC @ 10V	373pF @ 100V	±20V	-	48W (Tc)	750 mOhm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO-220-3	TO-220-3
AUIRF7647S2TR	Infineon Technologies	MOSFET N-CH 100V 5.9A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta), 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 41W (Tc) Rds On (Max) @ Id, Vgs: 31 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? SC Package / Case: DirectFET? Isometric SC	Package: DirectFET? Isometric SC	Stock7,264	MOSFET (Metal Oxide)	100V	5.9A (Ta), 24A (Tc)	10V	5V @ 50µA	21nC @ 10V	910pF @ 25V	±20V	-	2.5W (Ta), 41W (Tc)	31 mOhm @ 14A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DIRECTFET? SC	DirectFET? Isometric SC
IRLR3802PBF	Infineon Technologies	MOSFET N-CH 12V 84A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 84A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.8V, 4.5V Vgs(th) (Max) @ Id: 1.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2490pF @ 6V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 88W (Tc) Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 15A, 4.5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,432	MOSFET (Metal Oxide)	12V	84A (Tc)	2.8V, 4.5V	1.9V @ 250µA	41nC @ 5V	2490pF @ 6V	±12V	-	88W (Tc)	8.5 mOhm @ 15A, 4.5V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IPI80N06S407AKSA2	Infineon Technologies	MOSFET N-CH 60V 80A TO262-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 40µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 79W (Tc) Rds On (Max) @ Id, Vgs: 7.4 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3-1 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock7,776	MOSFET (Metal Oxide)	60V	80A (Tc)	10V	4V @ 40µA	56nC @ 10V	4500pF @ 25V	±20V	-	79W (Tc)	7.4 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO262-3-1	TO-262-3 Long Leads, I2Pak, TO-262AA
IPI80N06S4L07AKSA2	Infineon Technologies	MOSFET N-CH 60V 80A TO262-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 40µA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5680pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 79W (Tc) Rds On (Max) @ Id, Vgs: 6.7 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3-1 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock3,504	MOSFET (Metal Oxide)	60V	80A (Tc)	4.5V, 10V	2.2V @ 40µA	72nC @ 10V	5680pF @ 25V	±16V	-	79W (Tc)	6.7 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO262-3-1	TO-262-3 Long Leads, I2Pak, TO-262AA
IPD90N06S4L05ATMA2	Infineon Technologies	MOSFET N-CH 60V 90A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 60µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8180pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 107W (Tc) Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 90A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-11 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,152	MOSFET (Metal Oxide)	60V	90A (Tc)	4.5V, 10V	2.2V @ 60µA	110nC @ 10V	8180pF @ 25V	±16V	-	107W (Tc)	4.6 mOhm @ 90A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3-11	TO-252-3, DPak (2 Leads + Tab), SC-63
IRFH5110TRPBF	Infineon Technologies	MOSFET N-CH 100V 11A 8-PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 63A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3152pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 114W (Tc) Rds On (Max) @ Id, Vgs: 12.4 mOhm @ 37A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PQFN (5x6) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock7,552	MOSFET (Metal Oxide)	100V	11A (Ta), 63A (Tc)	10V	4V @ 100µA	72nC @ 10V	3152pF @ 25V	±20V	-	3.6W (Ta), 114W (Tc)	12.4 mOhm @ 37A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PQFN (5x6)	8-PowerVDFN
BSZ0501NSIATMA1	Infineon Technologies	MOSFET N-CH 30V 25A 8SON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 2 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8-FL Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock5,024	MOSFET (Metal Oxide)	30V	25A (Ta), 40A (Tc)	4.5V, 10V	2V @ 250µA	33nC @ 10V	2000pF @ 15V	±20V	-	2.1W (Ta), 50W (Tc)	2 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSDSON-8-FL	8-PowerTDFN
BSC0702LSATMA1	Infineon Technologies	MOSFET N-CH 8TDSON FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock2,736	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPD60R600E6ATMA1	Infineon Technologies	MOSFET N-CH 600V 7.3A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 20.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 63W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 2.4A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,688	MOSFET (Metal Oxide)	600V	7.3A (Tc)	10V	3.5V @ 200µA	20.5nC @ 10V	440pF @ 100V	±20V	-	63W (Tc)	600 mOhm @ 2.4A, 10V	-	Surface Mount	TO-252	TO-252-3, DPak (2 Leads + Tab), SC-63
IRL520NSTRLPBF	Infineon Technologies	MOSFET N-CH 100V 10A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 48W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock18,696	MOSFET (Metal Oxide)	100V	10A (Tc)	4V, 10V	2V @ 250µA	20nC @ 5V	440pF @ 25V	±16V	-	3.8W (Ta), 48W (Tc)	180 mOhm @ 6A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BSB104N08NP3GXUSA1	Infineon Technologies	MOSFET N-CH 80V 13A 2WDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 40µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 10.4 mOhm @ 10A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: MG-WDSON-2, CanPAK M? Package / Case: 3-WDSON	Package: 3-WDSON	Stock6,400	MOSFET (Metal Oxide)	80V	13A (Ta), 50A (Tc)	10V	3.5V @ 40µA	31nC @ 10V	2100pF @ 40V	±20V	-	2.8W (Ta), 42W (Tc)	10.4 mOhm @ 10A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	MG-WDSON-2, CanPAK M?	3-WDSON
IPI70P04P409AKSA1	Infineon Technologies	MOSFET N-CH TO262-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 120µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4810pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 70A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3-1 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock2,608	MOSFET (Metal Oxide)	40V	72A (Tc)	10V	4V @ 120µA	70nC @ 10V	4810pF @ 25V	±20V	-	75W (Tc)	9.4 mOhm @ 70A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO262-3-1	TO-262-3 Long Leads, I2Pak, TO-262AA
IPB70P04P409ATMA1	Infineon Technologies	MOSFET N-CH TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 120µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4810pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 70A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,016	MOSFET (Metal Oxide)	40V	72A (Tc)	10V	4V @ 120µA	70nC @ 10V	4810pF @ 25V	±20V	-	75W (Tc)	9.1 mOhm @ 70A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPI80N04S4L04AKSA1	Infineon Technologies	MOSFET N-CH 40V 80A TO262-3-1 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 35µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4690pF @ 25V Vgs (Max): +20V, -16V FET Feature: - Power Dissipation (Max): 71W (Tc) Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock2,560	MOSFET (Metal Oxide)	40V	80A (Tc)	4.5V, 10V	2.2V @ 35µA	60nC @ 10V	4690pF @ 25V	+20V, -16V	-	71W (Tc)	4.3 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO262-3	TO-262-3 Long Leads, I2Pak, TO-262AA
IPI80N04S404AKSA1	Infineon Technologies	MOSFET N-CH 40V 80A TO262-3-1 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 35µA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3440pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 71W (Tc) Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock6,688	MOSFET (Metal Oxide)	40V	80A (Tc)	10V	4V @ 35µA	43nC @ 10V	3440pF @ 25V	±20V	-	71W (Tc)	4.6 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO262-3	TO-262-3 Long Leads, I2Pak, TO-262AA
IPB80N04S4L04ATMA1	Infineon Technologies	MOSFET N-CH 40V 80A TO263-3-2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 35µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4690pF @ 25V Vgs (Max): +20V, -16V FET Feature: - Power Dissipation (Max): 71W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,312	MOSFET (Metal Oxide)	40V	80A (Tc)	4.5V, 10V	2.2V @ 35µA	60nC @ 10V	4690pF @ 25V	+20V, -16V	-	71W (Tc)	4 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB