Page 166 - Infineon Technologies Products - Transistors - FETs, MOSFETs - Single

IPD046N08N5ATMA1
Infineon Technologies

MOSFET N-CH TO-252-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,072
IRF1018ESPBF
Infineon Technologies

MOSFET N-CH 60V 79A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock390,000
IPB80N06S208ATMA2
Infineon Technologies

MOSFET N-CH 55V 80A TO263-3

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,560
IRLU2905PBF
Infineon Technologies

MOSFET N-CH 55V 42A I-PAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock125,964
IRLZ44NSPBF
Infineon Technologies

MOSFET N-CH 55V 47A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock61,092
SPD07N60C3ATMA1
Infineon Technologies

LOW POWER_LEGACY

Package: -

Stock5,728
IPS110N12N3GBKMA1
Infineon Technologies

MOSFET N-CH 120V 75A TO251-3

Package: TO-251-3 Stub Leads, IPak

Stock7,264
IRFH5302DTRPBF
Infineon Technologies

MOSFET N-CH 30V 29A 8VQFN

Package: 8-PowerVDFN

Stock432,600
IRL7833SPBF
Infineon Technologies

MOSFET N-CH 30V 150A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,008
AUIRF7484QTR
Infineon Technologies

MOSFET N CH 40V 14A 8-SO

Package: 8-SOIC (0.154", 3.90mm Width)

Stock31,260
IRFI7440GPBF
Infineon Technologies

MOSFET N-CH 40V 95A

Package: TO-220-3 Full Pack

Stock4,928
IPB80P03P405ATMA1
Infineon Technologies

MOSFET P-CH 30V 80A TO263-3

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,640
AUIRF7734M2TR
Infineon Technologies

MOSFET N-CH 40V 17A DIRECTFET

Package: DirectFET? Isometric M2

Stock5,488
BSC019N02KSGAUMA1
Infineon Technologies

MOSFET N-CH 20V 100A TDSON-8

Package: 8-PowerTDFN

Stock5,808
IRFH7110TRPBF
Infineon Technologies

MOSFET N CH 100V 11A PQFN 5X6

Package: 8-TQFN Exposed Pad

Stock3,264
IPB70N12S3L12ATMA1
Infineon Technologies

MOSFET N-CHANNEL_100+

Package: -

Stock5,328
IPB70N12S311ATMA1
Infineon Technologies

MOSFET N-CHANNEL_100+

Package: -

Stock5,440
AUIRFR3504TRL
Infineon Technologies

MOSFET N-CH 40V 87A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,360
IRFZ44ESTRRPBF
Infineon Technologies

MOSFET N-CH 60V 48A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,528
IPAW60R280CEXKSA1
Infineon Technologies

MOSFET N-CH 600V TO220-3

Package: TO-220-3 Full Pack

Stock7,424

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPD046N08N5ATMA1	Infineon Technologies	MOSFET N-CH TO-252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 65µA Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3800pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 45A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,072	MOSFET (Metal Oxide)	80V	90A (Tc)	6V, 10V	3.8V @ 65µA	53nC @ 10V	3800pF @ 40V	±20V	-	125W (Tc)	4.6 mOhm @ 45A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
IRF1018ESPBF	Infineon Technologies	MOSFET N-CH 60V 79A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 79A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2290pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 47A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock390,000	MOSFET (Metal Oxide)	60V	79A (Tc)	10V	4V @ 100µA	69nC @ 10V	2290pF @ 50V	±20V	-	110W (Tc)	8.4 mOhm @ 47A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPB80N06S208ATMA2	Infineon Technologies	MOSFET N-CH 55V 80A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2860pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 215W (Tc) Rds On (Max) @ Id, Vgs: 7.7 mOhm @ 58A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,560	MOSFET (Metal Oxide)	55V	80A (Tc)	10V	4V @ 150µA	96nC @ 10V	2860pF @ 25V	±20V	-	215W (Tc)	7.7 mOhm @ 58A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRLU2905PBF	Infineon Technologies	MOSFET N-CH 55V 42A I-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 27 mOhm @ 25A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock125,964	MOSFET (Metal Oxide)	55V	42A (Tc)	-	2V @ 250µA	48nC @ 5V	1700pF @ 25V	-	-	-	27 mOhm @ 25A, 10V	-	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
IRLZ44NSPBF	Infineon Technologies	MOSFET N-CH 55V 47A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 110W (Tc) Rds On (Max) @ Id, Vgs: 22 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock61,092	MOSFET (Metal Oxide)	55V	47A (Tc)	4V, 10V	2V @ 250µA	48nC @ 5V	1700pF @ 25V	±16V	-	3.8W (Ta), 110W (Tc)	22 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SPD07N60C3ATMA1	Infineon Technologies	LOW POWER_LEGACY FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock5,728	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPS110N12N3GBKMA1	Infineon Technologies	MOSFET N-CH 120V 75A TO251-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 83µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4310pF @ 60V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 11 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Stub Leads, IPak	Package: TO-251-3 Stub Leads, IPak	Stock7,264	MOSFET (Metal Oxide)	120V	75A (Tc)	10V	4V @ 83µA	65nC @ 10V	4310pF @ 60V	±20V	-	136W (Tc)	11 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO251-3	TO-251-3 Stub Leads, IPak
IRFH5302DTRPBF	Infineon Technologies	MOSFET N-CH 30V 29A 8VQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3635pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PQFN (5x6) Single Die Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock432,600	MOSFET (Metal Oxide)	30V	29A (Ta), 100A (Tc)	4.5V, 10V	2.35V @ 100µA	55nC @ 10V	3635pF @ 25V	±20V	-	3.6W (Ta), 104W (Tc)	2.5 mOhm @ 50A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PQFN (5x6) Single Die	8-PowerVDFN
IRL7833SPBF	Infineon Technologies	MOSFET N-CH 30V 150A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4170pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 38A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,008	MOSFET (Metal Oxide)	30V	150A (Tc)	4.5V, 10V	2.3V @ 250µA	47nC @ 4.5V	4170pF @ 15V	±20V	-	140W (Tc)	3.8 mOhm @ 38A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
AUIRF7484QTR	Infineon Technologies	MOSFET N CH 40V 14A 8-SO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Drive Voltage (Max Rds On, Min Rds On): 7V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 7V Input Capacitance (Ciss) (Max) @ Vds: 3520pF @ 25V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 10 mOhm @ 14A, 7V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock31,260	MOSFET (Metal Oxide)	40V	14A (Ta)	7V	2V @ 250µA	100nC @ 7V	3520pF @ 25V	±8V	-	2.5W (Ta)	10 mOhm @ 14A, 7V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRFI7440GPBF	Infineon Technologies	MOSFET N-CH 40V 95A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 95A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 132nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4549pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 42W (Tc) Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 57A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Full-Pak Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock4,928	MOSFET (Metal Oxide)	40V	95A (Tc)	10V	3.9V @ 100µA	132nC @ 10V	4549pF @ 25V	±20V	-	42W (Tc)	2.5 mOhm @ 57A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB Full-Pak	TO-220-3 Full Pack
IPB80P03P405ATMA1	Infineon Technologies	MOSFET P-CH 30V 80A TO263-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 253µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 137W (Tc) Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,640	MOSFET (Metal Oxide)	30V	80A (Tc)	10V	4V @ 253µA	130nC @ 10V	10300pF @ 25V	±20V	-	137W (Tc)	4.7 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
AUIRF7734M2TR	Infineon Technologies	MOSFET N-CH 40V 17A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2545pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 46W (Tc) Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 43A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? M2 Package / Case: DirectFET? Isometric M2	Package: DirectFET? Isometric M2	Stock5,488	MOSFET (Metal Oxide)	40V	17A (Ta)	10V	4V @ 100µA	72nC @ 10V	2545pF @ 25V	±20V	-	2.5W (Ta), 46W (Tc)	4.9 mOhm @ 43A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DIRECTFET? M2	DirectFET? Isometric M2
BSC019N02KSGAUMA1	Infineon Technologies	MOSFET N-CH 20V 100A TDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 350µA Gate Charge (Qg) (Max) @ Vgs: 85nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 1.95 mOhm @ 50A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock5,808	MOSFET (Metal Oxide)	20V	30A (Ta), 100A (Tc)	2.5V, 4.5V	1.2V @ 350µA	85nC @ 4.5V	13000pF @ 10V	±12V	-	2.8W (Ta), 104W (Tc)	1.95 mOhm @ 50A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8	8-PowerTDFN
IRFH7110TRPBF	Infineon Technologies	MOSFET N CH 100V 11A PQFN 5X6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 58A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3240pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 35A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6) Package / Case: 8-TQFN Exposed Pad	Package: 8-TQFN Exposed Pad	Stock3,264	MOSFET (Metal Oxide)	100V	11A (Ta), 58A (Tc)	10V	4V @ 100µA	87nC @ 10V	3240pF @ 25V	±20V	-	3.6W (Ta), 104W (Tc)	13.5 mOhm @ 35A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PQFN (5x6)	8-TQFN Exposed Pad
IPB70N12S3L12ATMA1	Infineon Technologies	MOSFET N-CHANNEL_100+ FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock5,328	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPB70N12S311ATMA1	Infineon Technologies	MOSFET N-CHANNEL_100+ FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock5,440	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AUIRFR3504TRL	Infineon Technologies	MOSFET N-CH 40V 87A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 9.2 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252AA) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,360	MOSFET (Metal Oxide)	40V	56A (Tc)	10V	4V @ 250µA	71nC @ 10V	2150pF @ 25V	±20V	-	140W (Tc)	9.2 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-PAK (TO-252AA)	TO-252-3, DPak (2 Leads + Tab), SC-63
IRFZ44ESTRRPBF	Infineon Technologies	MOSFET N-CH 60V 48A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 23 mOhm @ 29A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,528	MOSFET (Metal Oxide)	60V	48A (Tc)	10V	4V @ 250µA	60nC @ 10V	1360pF @ 25V	±20V	-	110W (Tc)	23 mOhm @ 29A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPAW60R280CEXKSA1	Infineon Technologies	MOSFET N-CH 600V TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 19.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 430µA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 100V Vgs (Max): ±20V FET Feature: Super Junction Power Dissipation (Max): 32W (Tc) Rds On (Max) @ Id, Vgs: 280 mOhm @ 6.5A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock7,424	MOSFET (Metal Oxide)	600V	19.3A (Tc)	10V	3.5V @ 430µA	43nC @ 10V	950pF @ 100V	±20V	Super Junction	32W (Tc)	280 mOhm @ 6.5A, 10V	-40°C ~ 150°C (TJ)	Through Hole	PG-TO220 Full Pack	TO-220-3 Full Pack
BSC027N06LS5ATMA1	Infineon Technologies	DIFFERENTIATED MOSFETS FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock7,760	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFH5004TRPBF	Infineon Technologies	MOSFET N-CH 40V 28A 8VQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4490pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 156W (Tc) Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PQFN (5x6) Single Die Package / Case: 8-VQFN	Package: 8-VQFN	Stock5,056	MOSFET (Metal Oxide)	40V	28A (Ta), 100A (Tc)	10V	4V @ 150µA	110nC @ 10V	4490pF @ 20V	±20V	-	3.6W (Ta), 156W (Tc)	2.6 mOhm @ 50A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PQFN (5x6) Single Die	8-VQFN
IPD100N04S4L02ATMA1	Infineon Technologies	MOSFET N-CHANNEL_30/40V FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock3,152	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRF5305STRRPBF	Infineon Technologies	MOSFET P-CH 55V 31A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 110W (Tc) Rds On (Max) @ Id, Vgs: 60 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock28,536	MOSFET (Metal Oxide)	55V	31A (Tc)	10V	4V @ 250µA	63nC @ 10V	1200pF @ 25V	±20V	-	3.8W (Ta), 110W (Tc)	60 mOhm @ 16A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF9540NSTRRPBF	Infineon Technologies	MOSFET P-CH 100V 23A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 110W (Tc) Rds On (Max) @ Id, Vgs: 117 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,400	MOSFET (Metal Oxide)	100V	23A (Tc)	10V	4V @ 250µA	110nC @ 10V	1450pF @ 25V	±20V	-	3.1W (Ta), 110W (Tc)	117 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPD60R280P7ATMA1	Infineon Technologies	LOW POWER_NEW FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock6,048	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPB80P03P4L04ATMA1	Infineon Technologies	MOSFET P-CH 30V 80A TO263-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 253µA Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11300pF @ 25V Vgs (Max): +5V, -16V FET Feature: - Power Dissipation (Max): 137W (Tc) Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,240	MOSFET (Metal Oxide)	30V	80A (Tc)	4.5V, 10V	2V @ 253µA	160nC @ 10V	11300pF @ 25V	+5V, -16V	-	137W (Tc)	4.1 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
AUIRF7416QTR	Infineon Technologies	MOSFET P-CH 30V 10A 8SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.04V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 20 mOhm @ 5.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock23,928	MOSFET (Metal Oxide)	30V	10A (Ta)	4.5V, 10V	2.04V @ 250µA	92nC @ 10V	1700pF @ 25V	±20V	-	2.5W (Ta)	20 mOhm @ 5.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)