Page 194 - Infineon Technologies Products - Transistors - FETs, MOSFETs - Single

IRLU2905
Infineon Technologies

MOSFET N-CH 55V 42A I-PAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock493,164
IRLU3103
Infineon Technologies

MOSFET N-CH 30V 55A I-PAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock12,348
IRF7403TR
Infineon Technologies

MOSFET N-CH 30V 8.5A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock329,556
94-4007
Infineon Technologies

MOSFET N-CH 30V 35A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,320
IRL5602S
Infineon Technologies

MOSFET P-CH 20V 24A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock174,000
IRL3502S
Infineon Technologies

MOSFET N-CH 20V 110A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,984
94-2386
Infineon Technologies

MOSFET N-CH 55V 49A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,424
IRF7421D1
Infineon Technologies

MOSFET N-CH 30V 5.8A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock4,320
IRFP150N
Infineon Technologies

MOSFET N-CH 100V 42A TO-247AC

Package: TO-247-3

Stock6,528
IRFP140N
Infineon Technologies

MOSFET N-CH 100V 33A TO-247AC

Package: TO-247-3

Stock109,512
IRFP048N
Infineon Technologies

MOSFET N-CH 55V 64A TO-247AC

Package: TO-247-3

Stock7,744
IRLR3103
Infineon Technologies

MOSFET N-CH 30V 55A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock527,508
IRL3803S
Infineon Technologies

MOSFET N-CH 30V 140A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock224,856
IRL3303S
Infineon Technologies

MOSFET N-CH 30V 38A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock10,356
IRL3103S
Infineon Technologies

MOSFET N-CH 30V 64A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock759,060
IRL3103D1S
Infineon Technologies

MOSFET N-CH 30V 64A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock319,800
IRFZ44ES
Infineon Technologies

MOSFET N-CH 60V 48A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock15,204
IRF3415S
Infineon Technologies

MOSFET N-CH 150V 43A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock36,048
IRF3315S
Infineon Technologies

MOSFET N-CH 150V 21A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock312,384
IRF2807S
Infineon Technologies

MOSFET N-CH 75V 82A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock28,836

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRLU2905	Infineon Technologies	MOSFET N-CH 55V 42A I-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 27 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock493,164	MOSFET (Metal Oxide)	55V	42A (Tc)	4V, 10V	2V @ 250µA	48nC @ 5V	1700pF @ 25V	±16V	-	110W (Tc)	27 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
IRLU3103	Infineon Technologies	MOSFET N-CH 30V 55A I-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 107W (Tc) Rds On (Max) @ Id, Vgs: 19 mOhm @ 33A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock12,348	MOSFET (Metal Oxide)	30V	55A (Tc)	4.5V, 10V	1V @ 250µA	50nC @ 4.5V	1600pF @ 25V	±16V	-	107W (Tc)	19 mOhm @ 33A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
IRF7403TR	Infineon Technologies	MOSFET N-CH 30V 8.5A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 22 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock329,556	MOSFET (Metal Oxide)	30V	8.5A (Ta)	4.5V, 10V	1V @ 250µA	57nC @ 10V	1200pF @ 25V	±20V	-	2.5W (Ta)	22 mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
94-4007	Infineon Technologies	MOSFET N-CH 30V 35A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 31 mOhm @ 21A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,320	MOSFET (Metal Oxide)	30V	35A (Tc)	4.5V, 10V	1V @ 250µA	26nC @ 4.5V	870pF @ 25V	±16V	-	68W (Tc)	31 mOhm @ 21A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRL5602S	Infineon Technologies	MOSFET P-CH 20V 24A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1460pF @ 15V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 42 mOhm @ 12A, 4.5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock174,000	MOSFET (Metal Oxide)	20V	24A (Tc)	2.5V, 4.5V	1V @ 250µA	44nC @ 4.5V	1460pF @ 15V	±8V	-	75W (Tc)	42 mOhm @ 12A, 4.5V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRL3502S	Infineon Technologies	MOSFET N-CH 20V 110A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 15V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 64A, 7V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,984	MOSFET (Metal Oxide)	20V	110A (Tc)	4.5V, 7V	700mV @ 250µA	110nC @ 4.5V	4700pF @ 15V	±10V	-	140W (Tc)	7 mOhm @ 64A, 7V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
94-2386	Infineon Technologies	MOSFET N-CH 55V 49A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 49A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 94W (Tc) Rds On (Max) @ Id, Vgs: 17.5 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,424	MOSFET (Metal Oxide)	55V	49A (Tc)	10V	4V @ 250µA	63nC @ 10V	1470pF @ 25V	±20V	-	3.8W (Ta), 94W (Tc)	17.5 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF7421D1	Infineon Technologies	MOSFET N-CH 30V 5.8A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V Vgs (Max): ±20V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock4,320	MOSFET (Metal Oxide)	30V	5.8A (Ta)	4.5V, 10V	1V @ 250µA	27nC @ 10V	510pF @ 25V	±20V	Schottky Diode (Isolated)	2W (Ta)	35 mOhm @ 4.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRFP150N	Infineon Technologies	MOSFET N-CH 100V 42A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 36 mOhm @ 23A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	Package: TO-247-3	Stock6,528	MOSFET (Metal Oxide)	100V	42A (Tc)	10V	4V @ 250µA	110nC @ 10V	1900pF @ 25V	±20V	-	160W (Tc)	36 mOhm @ 23A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247AC	TO-247-3
IRFP140N	Infineon Technologies	MOSFET N-CH 100V 33A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 52 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	Package: TO-247-3	Stock109,512	MOSFET (Metal Oxide)	100V	33A (Tc)	10V	4V @ 250µA	94nC @ 10V	1400pF @ 25V	±20V	-	140W (Tc)	52 mOhm @ 16A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247AC	TO-247-3
IRFP048N	Infineon Technologies	MOSFET N-CH 55V 64A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 89nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 16 mOhm @ 37A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	Package: TO-247-3	Stock7,744	MOSFET (Metal Oxide)	55V	64A (Tc)	10V	4V @ 250µA	89nC @ 10V	1900pF @ 25V	±20V	-	140W (Tc)	16 mOhm @ 37A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247AC	TO-247-3
IRLR3103	Infineon Technologies	MOSFET N-CH 30V 55A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 107W (Tc) Rds On (Max) @ Id, Vgs: 19 mOhm @ 33A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock527,508	MOSFET (Metal Oxide)	30V	55A (Tc)	4.5V, 10V	1V @ 250µA	50nC @ 4.5V	1600pF @ 25V	±16V	-	107W (Tc)	19 mOhm @ 33A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRL3803S	Infineon Technologies	MOSFET N-CH 30V 140A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 71A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock224,856	MOSFET (Metal Oxide)	30V	140A (Tc)	4.5V, 10V	1V @ 250µA	140nC @ 4.5V	5000pF @ 25V	±16V	-	3.8W (Ta), 200W (Tc)	6 mOhm @ 71A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRL3303S	Infineon Technologies	MOSFET N-CH 30V 38A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 68W (Tc) Rds On (Max) @ Id, Vgs: 26 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock10,356	MOSFET (Metal Oxide)	30V	38A (Tc)	4.5V, 10V	1V @ 250µA	26nC @ 4.5V	870pF @ 25V	±16V	-	3.8W (Ta), 68W (Tc)	26 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRL3103S	Infineon Technologies	MOSFET N-CH 30V 64A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 94W (Tc) Rds On (Max) @ Id, Vgs: 12 mOhm @ 34A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock759,060	MOSFET (Metal Oxide)	30V	64A (Tc)	4.5V, 10V	1V @ 250µA	33nC @ 4.5V	1650pF @ 25V	±16V	-	94W (Tc)	12 mOhm @ 34A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRL3103D1S	Infineon Technologies	MOSFET N-CH 30V 64A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 34A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock319,800	MOSFET (Metal Oxide)	30V	64A (Tc)	4.5V, 10V	1V @ 250µA	43nC @ 4.5V	1900pF @ 25V	±16V	-	3.1W (Ta), 89W (Tc)	14 mOhm @ 34A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFZ44ES	Infineon Technologies	MOSFET N-CH 60V 48A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 23 mOhm @ 29A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock15,204	MOSFET (Metal Oxide)	60V	48A (Tc)	10V	4V @ 250µA	60nC @ 10V	1360pF @ 25V	±20V	-	110W (Tc)	23 mOhm @ 29A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF3415S	Infineon Technologies	MOSFET N-CH 150V 43A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 43A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Rds On (Max) @ Id, Vgs: 42 mOhm @ 22A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock36,048	MOSFET (Metal Oxide)	150V	43A (Tc)	10V	4V @ 250µA	200nC @ 10V	2400pF @ 25V	±20V	-	3.8W (Ta), 200W (Tc)	42 mOhm @ 22A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF3315S	Infineon Technologies	MOSFET N-CH 150V 21A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 94W (Tc) Rds On (Max) @ Id, Vgs: 82 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock312,384	MOSFET (Metal Oxide)	150V	21A (Tc)	10V	4V @ 250µA	95nC @ 10V	1300pF @ 25V	±20V	-	3.8W (Ta), 94W (Tc)	82 mOhm @ 12A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF2807S	Infineon Technologies	MOSFET N-CH 75V 82A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 82A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3820pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 43A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock28,836	MOSFET (Metal Oxide)	75V	82A (Tc)	10V	4V @ 250µA	160nC @ 10V	3820pF @ 25V	±20V	-	230W (Tc)	13 mOhm @ 43A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRLIZ34N	Infineon Technologies	MOSFET N-CH 55V 22A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 37W (Tc) Rds On (Max) @ Id, Vgs: 35 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Full-Pak Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock104,640	MOSFET (Metal Oxide)	55V	22A (Tc)	4V, 10V	2V @ 250µA	25nC @ 5V	880pF @ 25V	±16V	-	37W (Tc)	35 mOhm @ 12A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB Full-Pak	TO-220-3 Full Pack
IRLI540N	Infineon Technologies	MOSFET N-CH 100V 23A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 74nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 54W (Tc) Rds On (Max) @ Id, Vgs: 44 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Full-Pak Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock6,624	MOSFET (Metal Oxide)	100V	23A (Tc)	4V, 10V	2V @ 250µA	74nC @ 5V	1800pF @ 25V	±16V	-	54W (Tc)	44 mOhm @ 12A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB Full-Pak	TO-220-3 Full Pack
IRLI530N	Infineon Technologies	MOSFET N-CH 100V 12A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 41W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Full-Pak Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock4,320	MOSFET (Metal Oxide)	100V	12A (Tc)	4V, 10V	2V @ 250µA	34nC @ 5V	800pF @ 25V	±16V	-	41W (Tc)	100 mOhm @ 9A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB Full-Pak	TO-220-3 Full Pack
IRLI520N	Infineon Technologies	MOSFET N-CH 100V 8.1A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Full-Pak Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock75,372	MOSFET (Metal Oxide)	100V	8.1A (Tc)	4V, 10V	2V @ 250µA	20nC @ 5V	440pF @ 25V	±16V	-	30W (Tc)	180 mOhm @ 6A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB Full-Pak	TO-220-3 Full Pack
IRLI3803	Infineon Technologies	MOSFET N-CH 30V 76A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 76A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 63W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Full-Pak Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock4,304	MOSFET (Metal Oxide)	30V	76A (Tc)	4.5V, 10V	1V @ 250µA	140nC @ 4.5V	5000pF @ 25V	±16V	-	63W (Tc)	6 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB Full-Pak	TO-220-3 Full Pack
IRLI2203N	Infineon Technologies	MOSFET N-CH 30V 61A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 61A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 47W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 37A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Full-Pak Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock45,204	MOSFET (Metal Oxide)	30V	61A (Tc)	4.5V, 10V	1V @ 250µA	110nC @ 4.5V	3500pF @ 25V	±16V	-	47W (Tc)	7 mOhm @ 37A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB Full-Pak	TO-220-3 Full Pack
IRL3303	Infineon Technologies	MOSFET N-CH 30V 38A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 26 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock10,428	MOSFET (Metal Oxide)	30V	38A (Tc)	4.5V, 10V	1V @ 250µA	26nC @ 4.5V	870pF @ 25V	±16V	-	68W (Tc)	26 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRL3103D1	Infineon Technologies	MOSFET N-CH 30V 64A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 2W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 34A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock6,608	MOSFET (Metal Oxide)	30V	64A (Tc)	4.5V, 10V	1V @ 250µA	43nC @ 4.5V	1900pF @ 25V	±16V	-	2W (Ta), 89W (Tc)	14 mOhm @ 34A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3