Page 199 - Infineon Technologies Products - Transistors - FETs, MOSFETs - Single

IRF3706
Infineon Technologies

MOSFET N-CH 20V 77A TO-220AB

Package: TO-220-3

Stock2,000
IRF3704
Infineon Technologies

MOSFET N-CH 20V 77A TO-220AB

Package: TO-220-3

Stock39,144
IRLI2505
Infineon Technologies

MOSFET N-CH 55V 58A TO220FP

Package: TO-220-3 Full Pack

Stock87,912
IRL3402
Infineon Technologies

MOSFET N-CH 20V 85A TO-220AB

Package: TO-220-3

Stock3,504
IRL3215
Infineon Technologies

MOSFET N-CH 150V 12A TO-220AB

Package: TO-220-3

Stock12,720
IRLBL1304
Infineon Technologies

MOSFET N-CH 40V 185A SUPER D2PAK

Package: Super D2-Pak

Stock3,360
IRFBL3703
Infineon Technologies

MOSFET N-CH 30V 260A SUPER D2PAK

Package: Super D2-Pak

Stock3,488
IRLBA3803P
Infineon Technologies

MOSFET N-CH 30V 179A SUPER-220

Package: Super-220?-3 (Straight Leads)

Stock4,992
IRLBA1304P
Infineon Technologies

MOSFET N-CH 40V 185A SUPER-220

Package: Super-220?-3 (Straight Leads)

Stock11,916
IRLBA1304
Infineon Technologies

MOSFET N-CH 40V 185A SUPER-220

Package: Super-220?-3 (Straight Leads)

Stock6,960
IRFBA1404P
Infineon Technologies

MOSFET N-CH 40V 206A SUPER-220

Package: Super-220?-3 (Straight Leads)

Stock3,696
IRLL2703
Infineon Technologies

MOSFET N-CH 30V 3.9A SOT223

Package: TO-261-4, TO-261AA

Stock180,888
IRFL1006
Infineon Technologies

MOSFET N-CH 60V 1.6A SOT223

Package: TO-261-4, TO-261AA

Stock5,344
IRFL024N
Infineon Technologies

MOSFET N-CH 55V 2.8A SOT223

Package: TO-261-4, TO-261AA

Stock295,968
SI4420DY
Infineon Technologies

MOSFET N-CH 30V 12.5A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock145,284
IRF7468
Infineon Technologies

MOSFET N-CH 40V 9.4A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock4,336
IRF7467
Infineon Technologies

MOSFET N-CH 30V 11A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock2,544
IRF7466
Infineon Technologies

MOSFET N-CH 30V 11A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock12,960
IRF7464
Infineon Technologies

MOSFET N-CH 200V 1.2A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock43,512
IRF7460
Infineon Technologies

MOSFET N-CH 20V 12A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock198,000

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF3706	Infineon Technologies	MOSFET N-CH 20V 77A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 77A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 88W (Tc) Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock2,000	MOSFET (Metal Oxide)	20V	77A (Tc)	2.8V, 10V	2V @ 250µA	35nC @ 4.5V	2410pF @ 10V	±12V	-	88W (Tc)	8.5 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRF3704	Infineon Technologies	MOSFET N-CH 20V 77A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 77A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1996pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 87W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock39,144	MOSFET (Metal Oxide)	20V	77A (Tc)	4.5V, 10V	3V @ 250µA	19nC @ 4.5V	1996pF @ 10V	±20V	-	87W (Tc)	9 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRLI2505	Infineon Technologies	MOSFET N-CH 55V 58A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 63W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 31A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Full-Pak Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock87,912	MOSFET (Metal Oxide)	55V	58A (Tc)	4V, 10V	2V @ 250µA	130nC @ 5V	5000pF @ 25V	±16V	-	63W (Tc)	8 mOhm @ 31A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB Full-Pak	TO-220-3 Full Pack
IRL3402	Infineon Technologies	MOSFET N-CH 20V 85A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 78nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 15V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 51A, 7V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock3,504	MOSFET (Metal Oxide)	20V	85A (Tc)	4.5V, 7V	700mV @ 250µA	78nC @ 4.5V	3300pF @ 15V	±10V	-	110W (Tc)	8 mOhm @ 51A, 7V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRL3215	Infineon Technologies	MOSFET N-CH 150V 12A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 775pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 166 mOhm @ 7.2A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock12,720	MOSFET (Metal Oxide)	150V	12A (Tc)	4V, 10V	2V @ 250µA	35nC @ 5V	775pF @ 25V	±16V	-	80W (Tc)	166 mOhm @ 7.2A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRLBL1304	Infineon Technologies	MOSFET N-CH 40V 185A SUPER D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 185A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 7660pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 110A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: SUPER D2-PAK Package / Case: Super D2-Pak	Package: Super D2-Pak	Stock3,360	MOSFET (Metal Oxide)	40V	185A (Tc)	4.5V, 10V	1V @ 250µA	140nC @ 4.5V	7660pF @ 25V	±16V	-	300W (Tc)	4.5 mOhm @ 110A, 10V	-	Surface Mount	SUPER D2-PAK	Super D2-Pak
IRFBL3703	Infineon Technologies	MOSFET N-CH 30V 260A SUPER D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 260A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 209nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8250pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 300W (Tc) Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 76A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: SUPER D2-PAK Package / Case: Super D2-Pak	Package: Super D2-Pak	Stock3,488	MOSFET (Metal Oxide)	30V	260A (Tc)	7V, 10V	4V @ 250µA	209nC @ 10V	8250pF @ 25V	±20V	-	3.8W (Ta), 300W (Tc)	2.5 mOhm @ 76A, 10V	-	Surface Mount	SUPER D2-PAK	Super D2-Pak
IRLBA3803P	Infineon Technologies	MOSFET N-CH 30V 179A SUPER-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 179A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 25V Vgs (Max): - FET Feature: - Power Dissipation (Max): 270W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 71A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: SUPER-220? (TO-273AA) Package / Case: Super-220?-3 (Straight Leads)	Package: Super-220?-3 (Straight Leads)	Stock4,992	MOSFET (Metal Oxide)	30V	179A (Tc)	-	1V @ 250µA	140nC @ 4.5V	5000pF @ 25V	-	-	270W (Tc)	5 mOhm @ 71A, 10V	-55°C ~ 175°C (TJ)	Through Hole	SUPER-220? (TO-273AA)	Super-220?-3 (Straight Leads)
IRLBA1304P	Infineon Technologies	MOSFET N-CH 40V 185A SUPER-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 185A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 7660pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 110A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: SUPER-220? (TO-273AA) Package / Case: Super-220?-3 (Straight Leads)	Package: Super-220?-3 (Straight Leads)	Stock11,916	MOSFET (Metal Oxide)	40V	185A (Tc)	4.5V, 10V	1V @ 250µA	140nC @ 4.5V	7660pF @ 25V	±16V	-	300W (Tc)	4 mOhm @ 110A, 10V	-55°C ~ 175°C (TJ)	Through Hole	SUPER-220? (TO-273AA)	Super-220?-3 (Straight Leads)
IRLBA1304	Infineon Technologies	MOSFET N-CH 40V 185A SUPER-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 185A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 7660pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 110A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: SUPER-220? (TO-273AA) Package / Case: Super-220?-3 (Straight Leads)	Package: Super-220?-3 (Straight Leads)	Stock6,960	MOSFET (Metal Oxide)	40V	185A (Tc)	4.5V, 10V	1V @ 250µA	140nC @ 4.5V	7660pF @ 25V	±16V	-	300W (Tc)	4 mOhm @ 110A, 10V	-55°C ~ 175°C (TJ)	Through Hole	SUPER-220? (TO-273AA)	Super-220?-3 (Straight Leads)
IRFBA1404P	Infineon Technologies	MOSFET N-CH 40V 206A SUPER-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 206A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7360pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 95A, 10V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: SUPER-220? (TO-273AA) Package / Case: Super-220?-3 (Straight Leads)	Package: Super-220?-3 (Straight Leads)	Stock3,696	MOSFET (Metal Oxide)	40V	206A (Tc)	10V	4V @ 250µA	200nC @ 10V	7360pF @ 25V	±20V	-	300W (Tc)	3.7 mOhm @ 95A, 10V	-40°C ~ 175°C (TJ)	Through Hole	SUPER-220? (TO-273AA)	Super-220?-3 (Straight Leads)
IRLL2703	Infineon Technologies	MOSFET N-CH 30V 3.9A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock180,888	MOSFET (Metal Oxide)	30V	3.9A (Ta)	4V, 10V	2.4V @ 250µA	14nC @ 5V	530pF @ 25V	±16V	-	1W (Ta)	45 mOhm @ 3.9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
IRFL1006	Infineon Technologies	MOSFET N-CH 60V 1.6A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 220 mOhm @ 1.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock5,344	MOSFET (Metal Oxide)	60V	1.6A (Ta)	10V	4V @ 250µA	8nC @ 10V	160pF @ 25V	±20V	-	1W (Ta)	220 mOhm @ 1.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
IRFL024N	Infineon Technologies	MOSFET N-CH 55V 2.8A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 75 mOhm @ 2.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock295,968	MOSFET (Metal Oxide)	55V	2.8A (Ta)	10V	4V @ 250µA	18.3nC @ 10V	400pF @ 25V	±20V	-	1W (Ta)	75 mOhm @ 2.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
SI4420DY	Infineon Technologies	MOSFET N-CH 30V 12.5A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2240pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 9 mOhm @ 12.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock145,284	MOSFET (Metal Oxide)	30V	12.5A (Ta)	4.5V, 10V	1V @ 250µA	78nC @ 10V	2240pF @ 15V	±20V	-	2.5W (Ta)	9 mOhm @ 12.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRF7468	Infineon Technologies	MOSFET N-CH 40V 9.4A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2460pF @ 20V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 15.5 mOhm @ 9.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock4,336	MOSFET (Metal Oxide)	40V	9.4A (Ta)	4.5V, 10V	2V @ 250µA	34nC @ 4.5V	2460pF @ 20V	±12V	-	2.5W (Ta)	15.5 mOhm @ 9.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRF7467	Infineon Technologies	MOSFET N-CH 30V 11A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2530pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 12 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock2,544	MOSFET (Metal Oxide)	30V	11A (Ta)	2.8V, 10V	2V @ 250µA	32nC @ 4.5V	2530pF @ 15V	±12V	-	2.5W (Ta)	12 mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRF7466	Infineon Technologies	MOSFET N-CH 30V 11A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock12,960	MOSFET (Metal Oxide)	30V	11A (Ta)	4.5V, 10V	3V @ 250µA	23nC @ 4.5V	2100pF @ 15V	±20V	-	2.5W (Ta)	12.5 mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRF7464	Infineon Technologies	MOSFET N-CH 200V 1.2A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 730 mOhm @ 720mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock43,512	MOSFET (Metal Oxide)	200V	1.2A (Ta)	10V	5.5V @ 250µA	14nC @ 10V	280pF @ 25V	±30V	-	2.5W (Ta)	730 mOhm @ 720mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRF7460	Infineon Technologies	MOSFET N-CH 20V 12A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 10 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock198,000	MOSFET (Metal Oxide)	20V	12A (Ta)	4.5V, 10V	3V @ 250µA	19nC @ 4.5V	2050pF @ 10V	±20V	-	2.5W (Ta)	10 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRF7459	Infineon Technologies	MOSFET N-CH 20V 12A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2480pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 9 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock70,644	MOSFET (Metal Oxide)	20V	12A (Ta)	2.8V, 10V	2V @ 250µA	35nC @ 4.5V	2480pF @ 10V	±12V	-	2.5W (Ta)	9 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRF7457	Infineon Technologies	MOSFET N-CH 20V 15A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 7 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock5,456	MOSFET (Metal Oxide)	20V	15A (Ta)	4.5V, 10V	3V @ 250µA	42nC @ 4.5V	3100pF @ 10V	±20V	-	2.5W (Ta)	7 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRF7452	Infineon Technologies	MOSFET N-CH 100V 4.5A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 60 mOhm @ 2.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock6,592	MOSFET (Metal Oxide)	100V	4.5A (Ta)	10V	5.5V @ 250µA	50nC @ 10V	930pF @ 25V	±30V	-	2.5W (Ta)	60 mOhm @ 2.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRF7413A	Infineon Technologies	MOSFET N-CH 30V 12A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 79nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 6.6A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock4,112	MOSFET (Metal Oxide)	30V	12A (Ta)	4.5V, 10V	1V @ 250µA	79nC @ 10V	1800pF @ 25V	±20V	-	2.5W (Ta)	13.5 mOhm @ 6.6A, 10V	-	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRF7607	Infineon Technologies	MOSFET N-CH 20V 6.5A MICRO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1310pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 30 mOhm @ 6.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Micro8? Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Stock30,576	MOSFET (Metal Oxide)	20V	6.5A (Ta)	2.5V, 4.5V	1.2V @ 250µA	22nC @ 5V	1310pF @ 15V	±12V	-	1.8W (Ta)	30 mOhm @ 6.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	Micro8?	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
IRF7523D1	Infineon Technologies	MOSFET N-CH 30V 2.7A MICRO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 25V Vgs (Max): ±20V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 130 mOhm @ 1.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Micro8? Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Stock7,792	MOSFET (Metal Oxide)	30V	2.7A (Ta)	4.5V, 10V	1V @ 250µA	12nC @ 10V	210pF @ 25V	±20V	Schottky Diode (Isolated)	1.25W (Ta)	130 mOhm @ 1.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	Micro8?	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
IRF7521D1	Infineon Technologies	MOSFET N-CH 20V 2.4A MICRO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 15V Vgs (Max): ±12V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 135 mOhm @ 1.7A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Micro8? Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Stock5,120	MOSFET (Metal Oxide)	20V	2.4A (Ta)	2.7V, 4.5V	700mV @ 250µA	8nC @ 4.5V	260pF @ 15V	±12V	Schottky Diode (Isolated)	1.3W (Ta)	135 mOhm @ 1.7A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	Micro8?	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
IRLMS2002	Infineon Technologies	MOSFET N-CH 20V 6.5A TSOP-6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1310pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 30 mOhm @ 6.5A, 4.5V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: Micro6?(SOT23-6) Package / Case: SOT-23-6	Package: SOT-23-6	Stock5,808	MOSFET (Metal Oxide)	20V	6.5A (Ta)	2.5V, 4.5V	1.2V @ 250µA	22nC @ 5V	1310pF @ 15V	±12V	-	2W (Ta)	30 mOhm @ 6.5A, 4.5V	-	Surface Mount	Micro6?(SOT23-6)	SOT-23-6