Page 210 - Infineon Technologies Products - Transistors - FETs, MOSFETs - Single

IRF1704
Infineon Technologies

MOSFET N-CH 40V 170A TO-220AB

Package: TO-220-3

Stock4,992
IRF630NL
Infineon Technologies

MOSFET N-CH 200V 9.3A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock2,240
IRF3709
Infineon Technologies

MOSFET N-CH 30V 90A TO-220AB

Package: TO-220-3

Stock42,552
IRF3711L
Infineon Technologies

MOSFET N-CH 20V 110A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock41,208
IRF3711
Infineon Technologies

MOSFET N-CH 20V 110A TO-220AB

Package: TO-220-3

Stock456,324
IRF3709L
Infineon Technologies

MOSFET N-CH 30V 90A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock2,016
IRFR3711
Infineon Technologies

MOSFET N-CH 20V 100A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock22,728
IRF3711S
Infineon Technologies

MOSFET N-CH 20V 110A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock495,696
IRFU3711
Infineon Technologies

MOSFET N-CH 20V 100A I-PAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock7,520
IRF3709S
Infineon Technologies

MOSFET N-CH 30V 90A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock393,120
IRFU3709
Infineon Technologies

MOSFET N-CH 30V 90A I-PAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock124,800
IRF7477
Infineon Technologies

MOSFET N-CH 30V 14A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock4,272
IRF7453
Infineon Technologies

MOSFET N-CH 250V 2.2A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock24,000
IRF7465
Infineon Technologies

MOSFET N-CH 150V 1.9A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock24,000
IRFZ48VS
Infineon Technologies

MOSFET N-CH 60V 72A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock402,492
IRFU2407
Infineon Technologies

MOSFET N-CH 75V 42A I-PAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock184,452
IRF7703
Infineon Technologies

MOSFET P-CH 40V 6A 8-TSSOP

Package: 8-TSSOP (0.173", 4.40mm Width)

Stock2,464
IRF7707
Infineon Technologies

MOSFET P-CH 20V 7A 8-TSSOP

Package: 8-TSSOP (0.173", 4.40mm Width)

Stock3,184
IRF7805A
Infineon Technologies

MOSFET N-CH 30V 13A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock4,304
IRF7705
Infineon Technologies

MOSFET P-CH 30V 8A 8-TSSOP

Package: 8-TSSOP (0.173", 4.40mm Width)

Stock33,492

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF1704	Infineon Technologies	MOSFET N-CH 40V 170A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6950pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock4,992	MOSFET (Metal Oxide)	40V	170A (Tc)	10V	4V @ 250µA	260nC @ 10V	6950pF @ 25V	±20V	-	230W (Tc)	4 mOhm @ 100A, 10V	-55°C ~ 200°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRF630NL	Infineon Technologies	MOSFET N-CH 200V 9.3A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 575pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 82W (Tc) Rds On (Max) @ Id, Vgs: 300 mOhm @ 5.4A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock2,240	MOSFET (Metal Oxide)	200V	9.3A (Tc)	10V	4V @ 250µA	35nC @ 10V	575pF @ 25V	±20V	-	82W (Tc)	300 mOhm @ 5.4A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
IRF3709	Infineon Technologies	MOSFET N-CH 30V 90A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2672pF @ 16V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 120W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock42,552	MOSFET (Metal Oxide)	30V	90A (Tc)	4.5V, 10V	3V @ 250µA	41nC @ 5V	2672pF @ 16V	±20V	-	3.1W (Ta), 120W (Tc)	9 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRF3711L	Infineon Technologies	MOSFET N-CH 20V 110A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2980pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 120W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock41,208	MOSFET (Metal Oxide)	20V	110A (Tc)	4.5V, 10V	3V @ 250µA	44nC @ 4.5V	2980pF @ 10V	±20V	-	3.1W (Ta), 120W (Tc)	6 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
IRF3711	Infineon Technologies	MOSFET N-CH 20V 110A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2980pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 120W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock456,324	MOSFET (Metal Oxide)	20V	110A (Tc)	4.5V, 10V	3V @ 250µA	44nC @ 4.5V	2980pF @ 10V	±20V	-	3.1W (Ta), 120W (Tc)	6 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRF3709L	Infineon Technologies	MOSFET N-CH 30V 90A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2672pF @ 16V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 120W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock2,016	MOSFET (Metal Oxide)	30V	90A (Tc)	4.5V, 10V	3V @ 250µA	41nC @ 5V	2672pF @ 16V	±20V	-	3.1W (Ta), 120W (Tc)	9 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
IRFR3711	Infineon Technologies	MOSFET N-CH 20V 100A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2980pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 120W (Tc) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock22,728	MOSFET (Metal Oxide)	20V	100A (Tc)	4.5V, 10V	3V @ 250µA	44nC @ 4.5V	2980pF @ 10V	±20V	-	2.5W (Ta), 120W (Tc)	6.5 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRF3711S	Infineon Technologies	MOSFET N-CH 20V 110A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2980pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 120W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock495,696	MOSFET (Metal Oxide)	20V	110A (Tc)	4.5V, 10V	3V @ 250µA	44nC @ 4.5V	2980pF @ 10V	±20V	-	3.1W (Ta), 120W (Tc)	6 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFU3711	Infineon Technologies	MOSFET N-CH 20V 100A I-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2980pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 120W (Tc) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock7,520	MOSFET (Metal Oxide)	20V	100A (Tc)	4.5V, 10V	3V @ 250µA	44nC @ 4.5V	2980pF @ 10V	±20V	-	2.5W (Ta), 120W (Tc)	6.5 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Through Hole	IPAK (TO-251)	TO-251-3 Short Leads, IPak, TO-251AA
IRF3709S	Infineon Technologies	MOSFET N-CH 30V 90A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2672pF @ 16V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 120W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock393,120	MOSFET (Metal Oxide)	30V	90A (Tc)	4.5V, 10V	3V @ 250µA	41nC @ 5V	2672pF @ 16V	±20V	-	3.1W (Ta), 120W (Tc)	9 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFU3709	Infineon Technologies	MOSFET N-CH 30V 90A I-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2672pF @ 16V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 120W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock124,800	MOSFET (Metal Oxide)	30V	90A (Tc)	4.5V, 10V	3V @ 250µA	41nC @ 4.5V	2672pF @ 16V	±20V	-	120W (Tc)	9 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Through Hole	IPAK (TO-251)	TO-251-3 Short Leads, IPak, TO-251AA
IRF7477	Infineon Technologies	MOSFET N-CH 30V 14A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2710pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock4,272	MOSFET (Metal Oxide)	30V	14A (Ta)	4.5V, 10V	2.5V @ 250µA	38nC @ 4.5V	2710pF @ 15V	±20V	-	2.5W (Ta)	8.5 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRF7453	Infineon Technologies	MOSFET N-CH 250V 2.2A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 230 mOhm @ 1.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock24,000	MOSFET (Metal Oxide)	250V	2.2A (Ta)	10V	5.5V @ 250µA	38nC @ 10V	930pF @ 25V	±30V	-	2.5W (Ta)	230 mOhm @ 1.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRF7465	Infineon Technologies	MOSFET N-CH 150V 1.9A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 280 mOhm @ 1.14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock24,000	MOSFET (Metal Oxide)	150V	1.9A (Ta)	10V	5.5V @ 250µA	15nC @ 10V	330pF @ 25V	±30V	-	2.5W (Ta)	280 mOhm @ 1.14A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRFZ48VS	Infineon Technologies	MOSFET N-CH 60V 72A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1985pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 12 mOhm @ 43A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock402,492	MOSFET (Metal Oxide)	60V	72A (Tc)	10V	4V @ 250µA	110nC @ 10V	1985pF @ 25V	±20V	-	150W (Tc)	12 mOhm @ 43A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFU2407	Infineon Technologies	MOSFET N-CH 75V 42A I-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 26 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock184,452	MOSFET (Metal Oxide)	75V	42A (Tc)	10V	4V @ 250µA	110nC @ 10V	2400pF @ 25V	±20V	-	110W (Tc)	26 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	IPAK (TO-251)	TO-251-3 Short Leads, IPak, TO-251AA
IRF7703	Infineon Technologies	MOSFET P-CH 40V 6A 8-TSSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 5220pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 28 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width)	Package: 8-TSSOP (0.173", 4.40mm Width)	Stock2,464	MOSFET (Metal Oxide)	40V	6A (Ta)	4.5V, 10V	3V @ 250µA	62nC @ 4.5V	5220pF @ 25V	±20V	-	1.5W (Ta)	28 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP	8-TSSOP (0.173", 4.40mm Width)
IRF7707	Infineon Technologies	MOSFET P-CH 20V 7A 8-TSSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2361pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 22 mOhm @ 7A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width)	Package: 8-TSSOP (0.173", 4.40mm Width)	Stock3,184	MOSFET (Metal Oxide)	20V	7A (Ta)	2.5V, 4.5V	1.2V @ 250µA	47nC @ 4.5V	2361pF @ 15V	±12V	-	1.5W (Ta)	22 mOhm @ 7A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP	8-TSSOP (0.173", 4.40mm Width)
IRF7805A	Infineon Technologies	MOSFET N-CH 30V 13A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 11 mOhm @ 7A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock4,304	MOSFET (Metal Oxide)	30V	13A (Ta)	4.5V	3V @ 250µA	31nC @ 5V	-	±12V	-	2.5W (Ta)	11 mOhm @ 7A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRF7705	Infineon Technologies	MOSFET P-CH 30V 8A 8-TSSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2774pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Tc) Rds On (Max) @ Id, Vgs: 18 mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width)	Package: 8-TSSOP (0.173", 4.40mm Width)	Stock33,492	MOSFET (Metal Oxide)	30V	8A (Tc)	4.5V, 10V	2.5V @ 250µA	88nC @ 10V	2774pF @ 25V	±20V	-	1.5W (Tc)	18 mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP	8-TSSOP (0.173", 4.40mm Width)
IRF7433	Infineon Technologies	MOSFET P-CH 12V 8.9A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1877pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 24 mOhm @ 8.7A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock3,632	MOSFET (Metal Oxide)	12V	8.9A (Ta)	1.8V, 4.5V	900mV @ 250µA	20nC @ 4.5V	1877pF @ 10V	±8V	-	2.5W (Ta)	24 mOhm @ 8.7A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRF7450	Infineon Technologies	MOSFET N-CH 200V 2.5A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 940pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 170 mOhm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock6,752	MOSFET (Metal Oxide)	200V	2.5A (Ta)	10V	5.5V @ 250µA	39nC @ 10V	940pF @ 25V	±30V	-	2.5W (Ta)	170 mOhm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRF7420	Infineon Technologies	MOSFET P-CH 12V 11.5A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3529pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 14 mOhm @ 11.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock15,432	MOSFET (Metal Oxide)	12V	11.5A (Tc)	1.8V, 4.5V	900mV @ 250µA	38nC @ 4.5V	3529pF @ 10V	±8V	-	2.5W (Ta)	14 mOhm @ 11.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRFU9014N	Infineon Technologies	MOSFET P-CH 60V 5.1A I-PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 500 mOhm @ 3.1A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock5,104	MOSFET (Metal Oxide)	60V	5.1A (Tc)	10V	4V @ 250µA	12nC @ 10V	270pF @ 25V	±20V	-	2.5W (Ta), 25W (Tc)	500 mOhm @ 3.1A, 10V	-	Through Hole	IPAK (TO-251)	TO-251-3 Short Leads, IPak, TO-251AA
IRF7704	Infineon Technologies	MOSFET P-CH 40V 4.6A 8-TSSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3150pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 46 mOhm @ 4.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width)	Package: 8-TSSOP (0.173", 4.40mm Width)	Stock12,300	MOSFET (Metal Oxide)	40V	4.6A (Ta)	4.5V, 10V	3V @ 250µA	38nC @ 4.5V	3150pF @ 25V	±20V	-	1.5W (Ta)	46 mOhm @ 4.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP	8-TSSOP (0.173", 4.40mm Width)
IRF7425	Infineon Technologies	MOSFET P-CH 20V 15A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 7980pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 15A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock7,552	MOSFET (Metal Oxide)	20V	15A (Ta)	2.5V, 4.5V	1.2V @ 250µA	130nC @ 4.5V	7980pF @ 15V	±12V	-	2.5W (Ta)	8.2 mOhm @ 15A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRF7809AV	Infineon Technologies	MOSFET N-CH 30V 13.3A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 3780pF @ 16V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 9 mOhm @ 15A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock8,820	MOSFET (Metal Oxide)	30V	13.3A (Ta)	4.5V	1V @ 250µA	62nC @ 5V	3780pF @ 16V	±12V	-	2.5W (Ta)	9 mOhm @ 15A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRF7701	Infineon Technologies	MOSFET P-CH 12V 10A 8-TSSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 5050pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 11 mOhm @ 10A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width)	Package: 8-TSSOP (0.173", 4.40mm Width)	Stock4,160	MOSFET (Metal Oxide)	12V	10A (Tc)	1.8V, 4.5V	1.2V @ 250µA	100nC @ 4.5V	5050pF @ 10V	±8V	-	1.5W (Ta)	11 mOhm @ 10A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP	8-TSSOP (0.173", 4.40mm Width)