Page 226 - Infineon Technologies Products - Transistors - FETs, MOSFETs - Single

IRF3805S
Infineon Technologies

MOSFET N-CH 55V 75A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,336
IRF3805
Infineon Technologies

MOSFET N-CH 55V 75A TO-220AB

Package: TO-220-3

Stock24,012
IRF1405ZS-7P
Infineon Technologies

MOSFET N-CH 55V 120A D2PAK7

Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Stock478,872
IRFSL4610PBF
Infineon Technologies

MOSFET N-CH 100V 73A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock5,488
IRFSL4610
Infineon Technologies

MOSFET N-CH 100V 73A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock3,376
IRFSL4410
Infineon Technologies

MOSFET N-CH 100V 96A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock8,796
IRFSL3507
Infineon Technologies

MOSFET N-CH 75V 97A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock5,840
IRFSL3307
Infineon Technologies

MOSFET N-CH 75V 130A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock5,520
IRFSL3207
Infineon Technologies

MOSFET N-CH 75V 180A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock37,668
IRFS4610PBF
Infineon Technologies

MOSFET N-CH 100V 73A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock37,452
IRFS4610
Infineon Technologies

MOSFET N-CH 100V 73A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,488
IRFS4410
Infineon Technologies

MOSFET N-CH 100V 96A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock416,268
IRFS3307
Infineon Technologies

MOSFET N-CH 75V 130A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,104
IRFB4610
Infineon Technologies

MOSFET N-CH 100V 73A TO-220AB

Package: TO-220-3

Stock522,156
IRFB4410
Infineon Technologies

MOSFET N-CH 100V 96A TO-220AB

Package: TO-220-3

Stock4,704
IRFB3507PBF
Infineon Technologies

MOSFET N-CH 75V 97A TO-220AB

Package: TO-220-3

Stock47,148
IRFB3507
Infineon Technologies

MOSFET N-CH 75V 97A TO-220AB

Package: TO-220-3

Stock3,344
IRFB3307
Infineon Technologies

MOSFET N-CH 75V 130A TO-220AB

Package: TO-220-3

Stock6,416
IRFP4232PBF
Infineon Technologies

MOSFET N-CH 250V 60A TO-247AC

Package: TO-247-3

Stock7,908
IRF2804STRL-7P
Infineon Technologies

MOSFET N-CH 40V 160A D2PAK7

Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Stock296,940

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF3805S	Infineon Technologies	MOSFET N-CH 55V 75A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 290nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7960pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 330W (Tc) Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,336	MOSFET (Metal Oxide)	55V	75A (Tc)	10V	4V @ 250µA	290nC @ 10V	7960pF @ 25V	±20V	-	330W (Tc)	3.3 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF3805	Infineon Technologies	MOSFET N-CH 55V 75A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 290nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7960pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 330W (Tc) Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock24,012	MOSFET (Metal Oxide)	55V	75A (Tc)	10V	4V @ 250µA	290nC @ 10V	7960pF @ 25V	±20V	-	330W (Tc)	3.3 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRF1405ZS-7P	Infineon Technologies	MOSFET N-CH 55V 120A D2PAK7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5360pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 88A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Stock478,872	MOSFET (Metal Oxide)	55V	120A (Tc)	10V	4V @ 150µA	230nC @ 10V	5360pF @ 25V	±20V	-	230W (Tc)	4.9 mOhm @ 88A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (7-Lead)	TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
IRFSL4610PBF	Infineon Technologies	MOSFET N-CH 100V 73A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 73A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3550pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 44A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock5,488	MOSFET (Metal Oxide)	100V	73A (Tc)	10V	4V @ 100µA	140nC @ 10V	3550pF @ 50V	±20V	-	190W (Tc)	14 mOhm @ 44A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
IRFSL4610	Infineon Technologies	MOSFET N-CH 100V 73A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 73A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3550pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 44A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock3,376	MOSFET (Metal Oxide)	100V	73A (Tc)	10V	4V @ 100µA	140nC @ 10V	3550pF @ 50V	±20V	-	190W (Tc)	14 mOhm @ 44A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
IRFSL4410	Infineon Technologies	MOSFET N-CH 100V 96A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 96A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5150pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 58A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock8,796	MOSFET (Metal Oxide)	100V	96A (Tc)	10V	4V @ 150µA	180nC @ 10V	5150pF @ 50V	±20V	-	250W (Tc)	10 mOhm @ 58A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
IRFSL3507	Infineon Technologies	MOSFET N-CH 75V 97A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 97A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3540pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 8.8 mOhm @ 58A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock5,840	MOSFET (Metal Oxide)	75V	97A (Tc)	10V	4V @ 100µA	130nC @ 10V	3540pF @ 50V	±20V	-	190W (Tc)	8.8 mOhm @ 58A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
IRFSL3307	Infineon Technologies	MOSFET N-CH 75V 130A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5150pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock5,520	MOSFET (Metal Oxide)	75V	130A (Tc)	10V	4V @ 150µA	180nC @ 10V	5150pF @ 50V	±20V	-	250W (Tc)	6.3 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
IRFSL3207	Infineon Technologies	MOSFET N-CH 75V 180A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 330W (Tc) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock37,668	MOSFET (Metal Oxide)	75V	180A (Tc)	10V	4V @ 250µA	260nC @ 10V	7600pF @ 50V	±20V	-	330W (Tc)	4.5 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
IRFS4610PBF	Infineon Technologies	MOSFET N-CH 100V 73A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 73A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3550pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 44A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock37,452	MOSFET (Metal Oxide)	100V	73A (Tc)	10V	4V @ 100µA	140nC @ 10V	3550pF @ 50V	±20V	-	190W (Tc)	14 mOhm @ 44A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFS4610	Infineon Technologies	MOSFET N-CH 100V 73A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 73A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3550pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 44A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,488	MOSFET (Metal Oxide)	100V	73A (Tc)	10V	4V @ 100µA	140nC @ 10V	3550pF @ 50V	±20V	-	190W (Tc)	14 mOhm @ 44A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFS4410	Infineon Technologies	MOSFET N-CH 100V 96A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 96A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5150pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 58A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock416,268	MOSFET (Metal Oxide)	100V	96A (Tc)	10V	4V @ 150µA	180nC @ 10V	5150pF @ 50V	±20V	-	250W (Tc)	10 mOhm @ 58A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFS3307	Infineon Technologies	MOSFET N-CH 75V 130A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5150pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,104	MOSFET (Metal Oxide)	75V	130A (Tc)	10V	4V @ 150µA	180nC @ 10V	5150pF @ 50V	±20V	-	250W (Tc)	6.3 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFB4610	Infineon Technologies	MOSFET N-CH 100V 73A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 73A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3550pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 44A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock522,156	MOSFET (Metal Oxide)	100V	73A (Tc)	10V	4V @ 100µA	140nC @ 10V	3550pF @ 50V	±20V	-	190W (Tc)	14 mOhm @ 44A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRFB4410	Infineon Technologies	MOSFET N-CH 100V 96A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 96A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5150pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 58A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock4,704	MOSFET (Metal Oxide)	100V	96A (Tc)	10V	4V @ 150µA	180nC @ 10V	5150pF @ 50V	±20V	-	250W (Tc)	10 mOhm @ 58A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRFB3507PBF	Infineon Technologies	MOSFET N-CH 75V 97A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 97A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3540pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 8.8 mOhm @ 58A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock47,148	MOSFET (Metal Oxide)	75V	97A (Tc)	10V	4V @ 100µA	130nC @ 10V	3540pF @ 50V	±20V	-	190W (Tc)	8.8 mOhm @ 58A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRFB3507	Infineon Technologies	MOSFET N-CH 75V 97A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 97A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3540pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 8.8 mOhm @ 58A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock3,344	MOSFET (Metal Oxide)	75V	97A (Tc)	10V	4V @ 100µA	130nC @ 10V	3540pF @ 50V	±20V	-	190W (Tc)	8.8 mOhm @ 58A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRFB3307	Infineon Technologies	MOSFET N-CH 75V 130A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5150pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock6,416	MOSFET (Metal Oxide)	75V	130A (Tc)	10V	4V @ 150µA	180nC @ 10V	5150pF @ 50V	±20V	-	250W (Tc)	6.3 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRFP4232PBF	Infineon Technologies	MOSFET N-CH 250V 60A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7290pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 430W (Tc) Rds On (Max) @ Id, Vgs: 35.7 mOhm @ 42A, 10V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	Package: TO-247-3	Stock7,908	MOSFET (Metal Oxide)	250V	60A (Tc)	10V	5V @ 250µA	240nC @ 10V	7290pF @ 25V	±20V	-	430W (Tc)	35.7 mOhm @ 42A, 10V	-40°C ~ 175°C (TJ)	Through Hole	TO-247AC	TO-247-3
IRF2804STRL-7P	Infineon Technologies	MOSFET N-CH 40V 160A D2PAK7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6930pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 330W (Tc) Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 160A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Stock296,940	MOSFET (Metal Oxide)	40V	160A (Tc)	10V	4V @ 250µA	260nC @ 10V	6930pF @ 25V	±20V	-	330W (Tc)	1.6 mOhm @ 160A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (7-Lead)	TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
IRF450	Infineon Technologies	MOSFET N-CH 500V 12A TO-3-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 500 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-204AA (TO-3) Package / Case: TO-204AA, TO-3	Package: TO-204AA, TO-3	Stock5,216	MOSFET (Metal Oxide)	500V	12A (Tc)	10V	4V @ 250µA	120nC @ 10V	2700pF @ 25V	±20V	-	150W (Tc)	500 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-204AA (TO-3)	TO-204AA, TO-3
IRLL024Z	Infineon Technologies	MOSFET N-CH 55V 5A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 60 mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock180,000	MOSFET (Metal Oxide)	55V	5A (Tc)	4.5V, 10V	3V @ 250µA	11nC @ 5V	380pF @ 25V	±16V	-	1W (Ta)	60 mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
IRFB4215	Infineon Technologies	MOSFET N-CH 60V 115A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 115A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4080pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 270W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 54A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock4,160	MOSFET (Metal Oxide)	60V	115A (Tc)	10V	4V @ 250µA	170nC @ 10V	4080pF @ 25V	±20V	-	270W (Tc)	9 mOhm @ 54A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRF3305	Infineon Technologies	MOSFET N-CH 55V 75A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3650pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 330W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock3,504	MOSFET (Metal Oxide)	55V	75A (Tc)	10V	4V @ 250µA	150nC @ 10V	3650pF @ 25V	±20V	-	330W (Tc)	8 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
64-9146	Infineon Technologies	MOSFET N-CH 20V 32A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 71nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 6580pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 1.8 mOhm @ 15A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? MT Package / Case: DirectFET? Isometric MT	Package: DirectFET? Isometric MT	Stock7,760	MOSFET (Metal Oxide)	20V	32A (Ta), 180A (Tc)	4.5V, 10V	2.5V @ 250µA	71nC @ 4.5V	6580pF @ 10V	±12V	-	2.8W (Ta), 89W (Tc)	1.8 mOhm @ 15A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? MT	DirectFET? Isometric MT
IRLIB4343	Infineon Technologies	MOSFET N-CH 55V 19A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 39W (Tc) Rds On (Max) @ Id, Vgs: 50 mOhm @ 4.7A, 10V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Full-Pak Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock5,808	MOSFET (Metal Oxide)	55V	19A (Tc)	4.5V, 10V	1V @ 250µA	42nC @ 10V	740pF @ 50V	±20V	-	39W (Tc)	50 mOhm @ 4.7A, 10V	-40°C ~ 175°C (TJ)	Through Hole	TO-220AB Full-Pak	TO-220-3 Full Pack
IRF540Z	Infineon Technologies	MOSFET N-CH 100V 36A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 92W (Tc) Rds On (Max) @ Id, Vgs: 26.5 mOhm @ 22A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock5,312	MOSFET (Metal Oxide)	100V	36A (Tc)	10V	4V @ 250µA	63nC @ 10V	1770pF @ 25V	±20V	-	92W (Tc)	26.5 mOhm @ 22A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRF4104	Infineon Technologies	MOSFET N-CH 40V 75A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock18,600	MOSFET (Metal Oxide)	40V	75A (Tc)	10V	4V @ 250µA	100nC @ 10V	3000pF @ 25V	±20V	-	140W (Tc)	5.5 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3