Page 232 - Infineon Technologies Products - Transistors - FETs, MOSFETs - Single

IRF1405LPBF
Infineon Technologies

MOSFET N-CH 55V 131A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock180,540
IRL3705NSPBF
Infineon Technologies

MOSFET N-CH 55V 89A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,352
IRL2203NSPBF
Infineon Technologies

MOSFET N-CH 30V 116A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock12,516
IRLI2203NPBF
Infineon Technologies

MOSFET N-CH 30V 61A TO220FP

Package: TO-220-3 Full Pack

Stock100,344
IRL1004SPBF
Infineon Technologies

MOSFET N-CH 40V 130A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,816
IRL3103D1PBF
Infineon Technologies

MOSFET N-CH 30V 64A TO-220AB

Package: TO-220-3

Stock2,672
IRL3103SPBF
Infineon Technologies

MOSFET N-CH 30V 64A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock34,200
IRL1404LPBF
Infineon Technologies

MOSFET N-CH 40V 160A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock49,368
64-2092PBF
Infineon Technologies

MOSFET N-CH 55V 75A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,464
IRF2807ZSPBF
Infineon Technologies

MOSFET N-CH 75V 75A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,048
IRFS4710PBF
Infineon Technologies

MOSFET N-CH 100V 75A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,320
IRL3502SPBF
Infineon Technologies

MOSFET N-CH 20V 110A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock39,288
IRL3502PBF
Infineon Technologies

MOSFET N-CH 20V 110A TO-220AB

Package: TO-220-3

Stock7,328
IRFS23N20DPBF
Infineon Technologies

MOSFET N-CH 200V 24A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,224
IRL1104LPBF
Infineon Technologies

MOSFET N-CH 40V 104A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock4,320
IRL1104PBF
Infineon Technologies

MOSFET N-CH 40V 104A TO-220AB

Package: TO-220-3

Stock35,856
IRL1104SPBF
Infineon Technologies

MOSFET N-CH 40V 104A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock243,624
IRFS33N15DPBF
Infineon Technologies

MOSFET N-CH 150V 33A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,480
IRF3315LPBF
Infineon Technologies

MOSFET N-CH 150V 21A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock3,648
IRF3315SPBF
Infineon Technologies

MOSFET N-CH 150V 21A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock28,200

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF1405LPBF	Infineon Technologies	MOSFET N-CH 55V 131A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 131A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5480pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 101A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock180,540	MOSFET (Metal Oxide)	55V	131A (Tc)	10V	4V @ 250µA	260nC @ 10V	5480pF @ 25V	±20V	-	200W (Tc)	5.3 mOhm @ 101A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
IRL3705NSPBF	Infineon Technologies	MOSFET N-CH 55V 89A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 89A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 98nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 170W (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 46A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,352	MOSFET (Metal Oxide)	55V	89A (Tc)	4V, 10V	2V @ 250µA	98nC @ 5V	3600pF @ 25V	±16V	-	3.8W (Ta), 170W (Tc)	10 mOhm @ 46A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRL2203NSPBF	Infineon Technologies	MOSFET N-CH 30V 116A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 116A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3290pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 180W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock12,516	MOSFET (Metal Oxide)	30V	116A (Tc)	4.5V, 10V	3V @ 250µA	60nC @ 4.5V	3290pF @ 25V	±16V	-	3.8W (Ta), 180W (Tc)	7 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRLI2203NPBF	Infineon Technologies	MOSFET N-CH 30V 61A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 61A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 47W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 37A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Full-Pak Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock100,344	MOSFET (Metal Oxide)	30V	61A (Tc)	4.5V, 10V	1V @ 250µA	110nC @ 4.5V	3500pF @ 25V	±16V	-	47W (Tc)	7 mOhm @ 37A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB Full-Pak	TO-220-3 Full Pack
IRL1004SPBF	Infineon Technologies	MOSFET N-CH 40V 130A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 5330pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 78A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,816	MOSFET (Metal Oxide)	40V	130A (Tc)	4.5V, 10V	1V @ 250µA	100nC @ 4.5V	5330pF @ 25V	±16V	-	3.8W (Ta), 200W (Tc)	6.5 mOhm @ 78A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRL3103D1PBF	Infineon Technologies	MOSFET N-CH 30V 64A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 2W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 34A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock2,672	MOSFET (Metal Oxide)	30V	64A (Tc)	4.5V, 10V	1V @ 250µA	43nC @ 4.5V	1900pF @ 25V	±16V	-	2W (Ta), 89W (Tc)	14 mOhm @ 34A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRL3103SPBF	Infineon Technologies	MOSFET N-CH 30V 64A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 94W (Tc) Rds On (Max) @ Id, Vgs: 12 mOhm @ 34A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock34,200	MOSFET (Metal Oxide)	30V	64A (Tc)	4.5V, 10V	1V @ 250µA	33nC @ 4.5V	1650pF @ 25V	±16V	-	94W (Tc)	12 mOhm @ 34A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRL1404LPBF	Infineon Technologies	MOSFET N-CH 40V 160A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 95A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock49,368	MOSFET (Metal Oxide)	40V	160A (Tc)	4.3V, 10V	3V @ 250µA	140nC @ 5V	6600pF @ 25V	±20V	-	3.8W (Ta), 200W (Tc)	4 mOhm @ 95A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
64-2092PBF	Infineon Technologies	MOSFET N-CH 55V 75A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3450pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 170W (Tc) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 66A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,464	MOSFET (Metal Oxide)	55V	75A (Tc)	10V	4V @ 250µA	110nC @ 10V	3450pF @ 25V	±20V	-	170W (Tc)	6.5 mOhm @ 66A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF2807ZSPBF	Infineon Technologies	MOSFET N-CH 75V 75A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3270pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 170W (Tc) Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 53A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,048	MOSFET (Metal Oxide)	75V	75A (Tc)	10V	4V @ 250µA	110nC @ 10V	3270pF @ 25V	±20V	-	170W (Tc)	9.4 mOhm @ 53A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFS4710PBF	Infineon Technologies	MOSFET N-CH 100V 75A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6160pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 45A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,320	MOSFET (Metal Oxide)	100V	75A (Tc)	10V	5.5V @ 250µA	170nC @ 10V	6160pF @ 25V	±20V	-	3.8W (Ta), 200W (Tc)	14 mOhm @ 45A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRL3502SPBF	Infineon Technologies	MOSFET N-CH 20V 110A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 15V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 64A, 7V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock39,288	MOSFET (Metal Oxide)	20V	110A (Tc)	4.5V, 7V	700mV @ 250µA	110nC @ 4.5V	4700pF @ 15V	±10V	-	140W (Tc)	7 mOhm @ 64A, 7V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRL3502PBF	Infineon Technologies	MOSFET N-CH 20V 110A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 15V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 64A, 7V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock7,328	MOSFET (Metal Oxide)	20V	110A (Tc)	4.5V, 7V	700mV @ 250µA	110nC @ 4.5V	4700pF @ 15V	±10V	-	140W (Tc)	7 mOhm @ 64A, 7V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRFS23N20DPBF	Infineon Technologies	MOSFET N-CH 200V 24A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1960pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 170W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,224	MOSFET (Metal Oxide)	200V	24A (Tc)	10V	5.5V @ 250µA	86nC @ 10V	1960pF @ 25V	±30V	-	3.8W (Ta), 170W (Tc)	100 mOhm @ 14A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRL1104LPBF	Infineon Technologies	MOSFET N-CH 40V 104A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 104A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 68nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3445pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 167W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 62A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock4,320	MOSFET (Metal Oxide)	40V	104A (Tc)	4.5V, 10V	1V @ 250µA	68nC @ 4.5V	3445pF @ 25V	±16V	-	2.4W (Ta), 167W (Tc)	8 mOhm @ 62A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
IRL1104PBF	Infineon Technologies	MOSFET N-CH 40V 104A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 104A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 68nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3445pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 167W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 62A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock35,856	MOSFET (Metal Oxide)	40V	104A (Tc)	4.5V, 10V	1V @ 250µA	68nC @ 4.5V	3445pF @ 25V	±16V	-	167W (Tc)	8 mOhm @ 62A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRL1104SPBF	Infineon Technologies	MOSFET N-CH 40V 104A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 104A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 68nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3445pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 167W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 62A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock243,624	MOSFET (Metal Oxide)	40V	104A (Tc)	4.5V, 10V	1V @ 250µA	68nC @ 4.5V	3445pF @ 25V	±16V	-	2.4W (Ta), 167W (Tc)	8 mOhm @ 62A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFS33N15DPBF	Infineon Technologies	MOSFET N-CH 150V 33A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2020pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 170W (Tc) Rds On (Max) @ Id, Vgs: 56 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,480	MOSFET (Metal Oxide)	150V	33A (Tc)	10V	5.5V @ 250µA	90nC @ 10V	2020pF @ 25V	±30V	-	3.8W (Ta), 170W (Tc)	56 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF3315LPBF	Infineon Technologies	MOSFET N-CH 150V 21A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 94W (Tc) Rds On (Max) @ Id, Vgs: 82 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock3,648	MOSFET (Metal Oxide)	150V	21A (Tc)	10V	4V @ 250µA	95nC @ 10V	1300pF @ 25V	±20V	-	3.8W (Ta), 94W (Tc)	82 mOhm @ 12A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
IRF3315SPBF	Infineon Technologies	MOSFET N-CH 150V 21A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 94W (Tc) Rds On (Max) @ Id, Vgs: 82 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock28,200	MOSFET (Metal Oxide)	150V	21A (Tc)	10V	4V @ 250µA	95nC @ 10V	1300pF @ 25V	±20V	-	3.8W (Ta), 94W (Tc)	82 mOhm @ 12A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFB4215PBF	Infineon Technologies	MOSFET N-CH 60V 115A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 115A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4080pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 270W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 54A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock2,000	MOSFET (Metal Oxide)	60V	115A (Tc)	10V	4V @ 250µA	170nC @ 10V	4080pF @ 25V	±20V	-	270W (Tc)	9 mOhm @ 54A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRFS17N20DPBF	Infineon Technologies	MOSFET N-CH 200V 16A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 140W (Tc) Rds On (Max) @ Id, Vgs: 170 mOhm @ 9.8A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,696	MOSFET (Metal Oxide)	200V	16A (Tc)	10V	5.5V @ 250µA	50nC @ 10V	1100pF @ 25V	±30V	-	3.8W (Ta), 140W (Tc)	170 mOhm @ 9.8A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF3305PBF	Infineon Technologies	MOSFET N-CH 55V 75A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3650pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 330W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock2,000	MOSFET (Metal Oxide)	55V	75A (Tc)	10V	4V @ 250µA	150nC @ 10V	3650pF @ 25V	±20V	-	330W (Tc)	8 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRL3303SPBF	Infineon Technologies	MOSFET N-CH 30V 38A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 68W (Tc) Rds On (Max) @ Id, Vgs: 26 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,312	MOSFET (Metal Oxide)	30V	38A (Tc)	4.5V, 10V	1V @ 250µA	26nC @ 4.5V	870pF @ 25V	±16V	-	3.8W (Ta), 68W (Tc)	26 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF2807ZLPBF	Infineon Technologies	MOSFET N-CH 75V 75A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3270pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 170W (Tc) Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 53A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock30,000	MOSFET (Metal Oxide)	75V	75A (Tc)	10V	4V @ 250µA	110nC @ 10V	3270pF @ 25V	±20V	-	170W (Tc)	9.4 mOhm @ 53A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
IRFZ46NSPBF	Infineon Technologies	MOSFET N-CH 55V 53A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 53A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1696pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 107W (Tc) Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 28A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock83,448	MOSFET (Metal Oxide)	55V	53A (Tc)	10V	4V @ 250µA	72nC @ 10V	1696pF @ 25V	±20V	-	3.8W (Ta), 107W (Tc)	16.5 mOhm @ 28A, 10V	-	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRL540NLPBF	Infineon Technologies	MOSFET N-CH 100V 36A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 74nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 140W (Tc) Rds On (Max) @ Id, Vgs: 44 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock86,400	MOSFET (Metal Oxide)	100V	36A (Tc)	4V, 10V	2V @ 250µA	74nC @ 5V	1800pF @ 25V	±16V	-	3.8W (Ta), 140W (Tc)	44 mOhm @ 18A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
IRF1010EZSPBF	Infineon Technologies	MOSFET N-CH 60V 75A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2810pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 51A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,000	MOSFET (Metal Oxide)	60V	75A (Tc)	10V	4V @ 100µA	86nC @ 10V	2810pF @ 25V	±20V	-	140W (Tc)	8.5 mOhm @ 51A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB