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Infineon Technologies |
N-CHANNEL POWER MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55 V
- Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 90µA
- Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 120W (Tc)
- Rds On (Max) @ Id, Vgs: 18mOhm @ 12A, 10V
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-5-2
- Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
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Package: - |
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MOSFET (Metal Oxide) | 55 V | 33A (Tc) | 4.5V, 10V | 2V @ 90µA | 90 nC @ 10 V | 1730 pF @ 25 V | ±20V | - | 120W (Tc) | 18mOhm @ 12A, 10V | -40°C ~ 175°C (TJ) | Surface Mount | PG-TO263-5-2 | TO-263-5, D2PAK (4 Leads + Tab), TO-263BB |
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Infineon Technologies |
MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 12V
- Vgs(th) (Max) @ Id: 4.5V @ 1.44mA
- Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V
- Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 300 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 416W (Tc)
- Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HDSOP-22-1
- Package / Case: 22-PowerBSOP Module
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 600 V | 24A (Tc) | 12V | 4.5V @ 1.44mA | 150 nC @ 12 V | 5640 pF @ 300 V | ±20V | - | 416W (Tc) | 22mOhm @ 23A, 12V | -40°C ~ 150°C (TJ) | Surface Mount | PG-HDSOP-22-1 | 22-PowerBSOP Module |
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Infineon Technologies |
MOSFET N-CH 120V 56A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 120 V
- Current - Continuous Drain (Id) @ 25°C: 56A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 61µA
- Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 60 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 107W (Tc)
- Rds On (Max) @ Id, Vgs: 14.4mOhm @ 56A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Package: - |
Stock7,638 |
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MOSFET (Metal Oxide) | 120 V | 56A (Ta) | 10V | 4V @ 61µA | 49 nC @ 10 V | 3220 pF @ 60 V | ±20V | - | 107W (Tc) | 14.4mOhm @ 56A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
POWER FIELD-EFFECT TRANSISTOR, 1
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 44A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
- Rds On (Max) @ Id, Vgs: 9.1mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-6
- Package / Case: 8-PowerTDFN
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 30 V | 12A (Ta), 44A (Tc) | 4.5V, 10V | 2V @ 250µA | 20 nC @ 10 V | 1500 pF @ 15 V | ±20V | - | 2.5W (Ta), 28W (Tc) | 9.1mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-6 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 40V 120A 8TDSON-33
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
- Vgs(th) (Max) @ Id: 3.4V @ 90µA
- Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 7360 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 0.9mOhm @ 60A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-33
- Package / Case: 8-PowerTDFN
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 40 V | 120A (Tc) | 7V, 10V | 3.4V @ 90µA | 115 nC @ 10 V | 7360 pF @ 25 V | ±20V | - | 150W (Tc) | 0.9mOhm @ 60A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8-33 | 8-PowerTDFN |
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Infineon Technologies |
40V 4.6M OPTIMOS MOSFET SUPERSO8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 77A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
- Vgs(th) (Max) @ Id: 3.4V @ 17µA
- Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 50W (Tc)
- Rds On (Max) @ Id, Vgs: 4.6mOhm @ 35A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8 FL
- Package / Case: 8-PowerTDFN
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Package: - |
Stock44,835 |
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MOSFET (Metal Oxide) | 40 V | 19A (Ta), 77A (Tc) | 7V, 10V | 3.4V @ 17µA | 21 nC @ 10 V | 1400 pF @ 20 V | ±20V | - | 3W (Ta), 50W (Tc) | 4.6mOhm @ 35A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8 FL | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH TO262-3
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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- | - | 80A (Tc) | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 60V 87A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.3V @ 36µA
- Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 38W (Tc)
- Rds On (Max) @ Id, Vgs: 2.9mOhm @ 87A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220 Full Pack
- Package / Case: TO-220-3 Full Pack
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Package: - |
Stock1,437 |
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MOSFET (Metal Oxide) | 60 V | 87A (Tc) | 6V, 10V | 3.3V @ 36µA | 74 nC @ 10 V | 5300 pF @ 30 V | ±20V | - | 38W (Tc) | 2.9mOhm @ 87A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET P-CH 60V 180MA SOT23-3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 11µA
- Gate Charge (Qg) (Max) @ Vgs: 0.59 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 18 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 400mW (Ta)
- Rds On (Max) @ Id, Vgs: 5.5Ohm @ 180mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT23-3-5
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: - |
Stock300,603 |
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MOSFET (Metal Oxide) | 60 V | 180mA (Ta) | 4.5V, 10V | 2V @ 11µA | 0.59 nC @ 10 V | 18 pF @ 30 V | ±20V | - | 400mW (Ta) | 5.5Ohm @ 180mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT23-3-5 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET 100V 170A DIE
- FET Type: -
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 170A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 9mOhm @ 170A, 10V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 100 V | 170A | 10V | - | - | - | - | - | - | 9mOhm @ 170A, 10V | - | Surface Mount | Die | Die |
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Infineon Technologies |
MOSFET P-CH 20V 12A 8DSO
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 15 V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta)
- Rds On (Max) @ Id, Vgs: 8mOhm @ 14.9A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-DSO-8
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: - |
Stock33,915 |
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MOSFET (Metal Oxide) | 20 V | 12A (Ta) | 2.5V, 4.5V | 1.2V @ 250µA | 88 nC @ 4.5 V | 9600 pF @ 15 V | ±12V | - | 1.6W (Ta) | 8mOhm @ 14.9A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | PG-DSO-8 | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 60V 80A TO263-3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 5.5mA
- Gate Charge (Qg) (Max) @ Vgs: 173 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 5033 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 340W (Tc)
- Rds On (Max) @ Id, Vgs: 23mOhm @ 64A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Package: - |
Stock9,099 |
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MOSFET (Metal Oxide) | 60 V | 80A (Tc) | 10V | 4V @ 5.5mA | 173 nC @ 10 V | 5033 pF @ 25 V | ±20V | - | 340W (Tc) | 23mOhm @ 64A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 600V 29A HDSOP-10
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 490µA
- Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 400 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 174W (Tc)
- Rds On (Max) @ Id, Vgs: 80mOhm @ 9.7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HDSOP-10-1
- Package / Case: 10-PowerSOP Module
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Package: - |
Stock9,300 |
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MOSFET (Metal Oxide) | 600 V | 29A (Tc) | 10V | 4V @ 490µA | 42 nC @ 10 V | 1640 pF @ 400 V | ±20V | - | 174W (Tc) | 80mOhm @ 9.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-HDSOP-10-1 | 10-PowerSOP Module |
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Infineon Technologies |
N-CHANNEL POWER MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 50 V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 50W
- Rds On (Max) @ Id, Vgs: 100mOhm @ 9A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO220-3-5
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 50 V | 17A (Tc) | 10V | 3.5V @ 1mA | - | 600 pF @ 25 V | ±20V | - | 50W | 100mOhm @ 9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO220-3-5 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 90A TO252-31
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 45µA
- Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 94W (Tc)
- Rds On (Max) @ Id, Vgs: 3.6mOhm @ 90A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3-11
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock125,349 |
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MOSFET (Metal Oxide) | 40 V | 90A (Tc) | 4.5V, 10V | 2V @ 45µA | 78 nC @ 10 V | 6300 pF @ 20 V | ±20V | - | 94W (Tc) | 3.6mOhm @ 90A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-11 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Infineon Technologies |
SILICON CARBIDE MOSFET
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-4
- Package / Case: TO-247-4
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - | Through Hole | PG-TO247-4 | TO-247-4 |
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Infineon Technologies |
SMALL SIGNAL N-CHANNEL MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 3.7µA
- Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds: 143 pF @ 10 V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 140mOhm @ 1.5A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT363-6-6
- Package / Case: 6-VSSOP, SC-88, SOT-363
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 20 V | 1.5A (Ta) | 2.5V, 4.5V | 1.2V @ 3.7µA | 0.8 nC @ 5 V | 143 pF @ 10 V | ±12V | - | 500mW (Ta) | 140mOhm @ 1.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT363-6-6 | 6-VSSOP, SC-88, SOT-363 |
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Infineon Technologies |
MOSFET N-CH 100V 27A/202A 8HSOF
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 202A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 158µA
- Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 214W (Tc)
- Rds On (Max) @ Id, Vgs: 2.6mOhm @ 150A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOF-8-1
- Package / Case: 8-PowerSFN
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Package: - |
Stock21,648 |
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MOSFET (Metal Oxide) | 100 V | 27A (Ta), 202A (Tc) | 6V, 10V | 3.8V @ 158µA | 120 nC @ 10 V | 8800 pF @ 50 V | ±20V | - | 214W (Tc) | 2.6mOhm @ 150A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOF-8-1 | 8-PowerSFN |
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Infineon Technologies |
IC MOSFET
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 30V 12A/40A TSDSON
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSDSON-8-FL
- Package / Case: 8-PowerTDFN
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Package: - |
Stock109,578 |
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MOSFET (Metal Oxide) | 30 V | 12A (Ta), 40A (Tc) | 4.5V, 10V | 2V @ 250µA | 10 nC @ 10 V | 670 pF @ 15 V | ±20V | - | - | 6.5mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
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Infineon Technologies |
TRENCH >=100V
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 120 V
- Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 222A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
- Vgs(th) (Max) @ Id: 3.6V @ 169µA
- Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 60 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 278W (Tc)
- Rds On (Max) @ Id, Vgs: 2.6mOhm @ 115A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HDSOP-16-2
- Package / Case: 16-PowerSOP Module
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Package: - |
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MOSFET (Metal Oxide) | 120 V | 26A (Ta), 222A (Tc) | 8V, 10V | 3.6V @ 169µA | 88 nC @ 10 V | 6500 pF @ 60 V | ±20V | - | 3.8W (Ta), 278W (Tc) | 2.6mOhm @ 115A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-HDSOP-16-2 | 16-PowerSOP Module |
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Infineon Technologies |
MOSFET N-CH 600V 101A TO247-4-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 101A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 2.03mA
- Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 7144 pF @ 400 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 291W (Tc)
- Rds On (Max) @ Id, Vgs: 24mOhm @ 42A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-4-3
- Package / Case: TO-247-4
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Package: - |
Stock630 |
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MOSFET (Metal Oxide) | 600 V | 101A (Tc) | 10V | 4V @ 2.03mA | 164 nC @ 10 V | 7144 pF @ 400 V | ±20V | - | 291W (Tc) | 24mOhm @ 42A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-4-3 | TO-247-4 |
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Infineon Technologies |
TRENCH >=100V DIRECTFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
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MOSFET (Metal Oxide) | 150 V | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 20V 4.2A SOT-23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 15 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 45mOhm @ 4.2A, 4.5V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: Micro3™/SOT-23
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: - |
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MOSFET (Metal Oxide) | 20 V | 4.2A (Ta) | - | 1.2V @ 250µA | 12 nC @ 5 V | 740 pF @ 15 V | - | - | - | 45mOhm @ 4.2A, 4.5V | - | Surface Mount | Micro3™/SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
OPTIMOS 5 POWER MOSFET 60 V
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 242A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.3V @ 95µA
- Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
- Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOF-5-1
- Package / Case: 5-PowerSFN
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Package: - |
Stock5,193 |
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MOSFET (Metal Oxide) | 60 V | 36A (Ta), 242A (Tc) | 6V, 10V | 3.3V @ 95µA | 89 nC @ 10 V | 5200 pF @ 30 V | ±20V | - | 3.8W (Ta), 167W (Tc) | 1.5mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOF-5-1 | 5-PowerSFN |
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Infineon Technologies |
MOSFET N-CH 40V 8.9A/31A TSDSON
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 31A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 10µA
- Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 25W (Tc)
- Rds On (Max) @ Id, Vgs: 16.5mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSDSON-8
- Package / Case: 8-PowerTDFN
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Package: - |
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MOSFET (Metal Oxide) | 40 V | 8.9A (Ta), 31A (Tc) | 10V | 4V @ 10µA | 10 nC @ 10 V | 840 pF @ 20 V | ±20V | - | 2.1W (Ta), 25W (Tc) | 16.5mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
N-CHANNEL POWER MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 220µA
- Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 100 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 60W (Tc)
- Rds On (Max) @ Id, Vgs: 600mOhm @ 3.3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Package: - |
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MOSFET (Metal Oxide) | 600 V | 6.1A (Tc) | 10V | 3.5V @ 220µA | 27 nC @ 10 V | 550 pF @ 100 V | ±20V | - | 60W (Tc) | 600mOhm @ 3.3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 600V 13.8A TO247-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 430µA
- Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 104W (Tc)
- Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3-1
- Package / Case: TO-247-3
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Package: - |
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MOSFET (Metal Oxide) | 600 V | 13.8A (Tc) | 10V | 3.5V @ 430µA | 43 nC @ 10 V | 950 pF @ 100 V | ±20V | - | 104W (Tc) | 280mOhm @ 6.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3-1 | TO-247-3 |