Page 241 - Infineon Technologies Products - Transistors - FETs, MOSFETs - Single

SPD07N60S5T
Infineon Technologies

MOSFET N-CH 600V 7.3A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,920
SPD07N60C3T
Infineon Technologies

MOSFET N-CH 650V 7.3A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,448
IPB06N03LAT
Infineon Technologies

MOSFET N-CH 25V 50A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,416
IPB05N03LAT
Infineon Technologies

MOSFET N-CH 25V 80A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,240
BSS87E6327T
Infineon Technologies

MOSFET N-CH 240V 260MA SOT-89

Package: TO-243AA

Stock3,536
BSS192PE6327T
Infineon Technologies

MOSFET P-CH 250V 0.19A SOT-89

Package: TO-243AA

Stock6,240
BSP88L6327HTSA1
Infineon Technologies

MOSFET N-CH 240V 350MA SOT223

Package: TO-261-4, TO-261AA

Stock5,008
BSP317PE6327T
Infineon Technologies

MOSFET P-CH 250V 0.43A SOT223

Package: TO-261-4, TO-261AA

Stock4,352
BSP316PE6327T
Infineon Technologies

MOSFET P-CH 100V 0.68A SOT223

Package: TO-261-4, TO-261AA

Stock2,016
BSP315PE6327T
Infineon Technologies

MOSFET P-CH 60V 1.17A SOT-223

Package: TO-261-4, TO-261AA

Stock2,288
BSP295E6327T
Infineon Technologies

MOSFET N-CH 60V 1.8A SOT223

Package: TO-261-4, TO-261AA

Stock4,752
BSP171PE6327T
Infineon Technologies

MOSFET P-CH 60V 1.9A SOT223

Package: TO-261-4, TO-261AA

Stock2,560
BSP170PE6327T
Infineon Technologies

MOSFET P-CH 60V 1.9A SOT223

Package: TO-261-4, TO-261AA

Stock6,160
BSP129E6327T
Infineon Technologies

MOSFET N-CH 240V 350MA SOT223

Package: TO-261-4, TO-261AA

Stock3,456
BSP123E6327T
Infineon Technologies

MOSFET N-CH 100V 370MA SOT223

Package: TO-261-4, TO-261AA

Stock3,296
BSO4822T
Infineon Technologies

MOSFET N-CH 30V 12.7A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock3,104
BSO4420T
Infineon Technologies

MOSFET N-CH 30V 13A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock3,584
BSO4410T
Infineon Technologies

MOSFET N-CH 30V 11.1A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock7,472
BSO201SPNTMA1
Infineon Technologies

MOSFET P-CH 20V 14.9A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock6,912
BSL211SPT
Infineon Technologies

MOSFET P-CH 20V 4.7A 6-TSOP

Package: SOT-23-6 Thin, TSOT-23-6

Stock6,640

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
SPD07N60S5T	Infineon Technologies	MOSFET N-CH 600V 7.3A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 350µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 4.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,920	MOSFET (Metal Oxide)	600V	7.3A (Tc)	10V	5.5V @ 350µA	35nC @ 10V	970pF @ 25V	±20V	-	83W (Tc)	600 mOhm @ 4.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
SPD07N60C3T	Infineon Technologies	MOSFET N-CH 650V 7.3A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 350µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 4.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,448	MOSFET (Metal Oxide)	650V	7.3A (Tc)	10V	3.9V @ 350µA	27nC @ 10V	790pF @ 25V	±20V	-	83W (Tc)	600 mOhm @ 4.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
IPB06N03LAT	Infineon Technologies	MOSFET N-CH 25V 50A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 40µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2653pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,416	MOSFET (Metal Oxide)	25V	50A (Tc)	4.5V, 10V	2V @ 40µA	22nC @ 5V	2653pF @ 15V	±20V	-	83W (Tc)	5.9 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPB05N03LAT	Infineon Technologies	MOSFET N-CH 25V 80A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 3110pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 94W (Tc) Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 55A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,240	MOSFET (Metal Oxide)	25V	80A (Tc)	4.5V, 10V	2V @ 50µA	25nC @ 5V	3110pF @ 15V	±20V	-	94W (Tc)	4.6 mOhm @ 55A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BSS87E6327T	Infineon Technologies	MOSFET N-CH 240V 260MA SOT-89 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 240V Current - Continuous Drain (Id) @ 25°C: 260mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.8V @ 108µA Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 97pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 6 Ohm @ 260mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT89-4-2 Package / Case: TO-243AA	Package: TO-243AA	Stock3,536	MOSFET (Metal Oxide)	240V	260mA (Ta)	4.5V, 10V	1.8V @ 108µA	5.5nC @ 10V	97pF @ 25V	±20V	-	1W (Ta)	6 Ohm @ 260mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT89-4-2	TO-243AA
BSS192PE6327T	Infineon Technologies	MOSFET P-CH 250V 0.19A SOT-89 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 190mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V Vgs(th) (Max) @ Id: 2V @ 130µA Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 104pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 12 Ohm @ 190mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT89 Package / Case: TO-243AA	Package: TO-243AA	Stock6,240	MOSFET (Metal Oxide)	250V	190mA (Ta)	2.8V, 10V	2V @ 130µA	6.1nC @ 10V	104pF @ 25V	±20V	-	1W (Ta)	12 Ohm @ 190mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT89	TO-243AA
BSP88L6327HTSA1	Infineon Technologies	MOSFET N-CH 240V 350MA SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 240V Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.8V, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 108µA Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 95pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.7W (Ta) Rds On (Max) @ Id, Vgs: 6 Ohm @ 350mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock5,008	MOSFET (Metal Oxide)	240V	350mA (Ta)	2.8V, 4.5V	1.4V @ 108µA	6.8nC @ 10V	95pF @ 25V	±20V	-	1.7W (Ta)	6 Ohm @ 350mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT223-4	TO-261-4, TO-261AA
BSP317PE6327T	Infineon Technologies	MOSFET P-CH 250V 0.43A SOT223 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 430mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 370µA Gate Charge (Qg) (Max) @ Vgs: 15.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 262pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 4 Ohm @ 430mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock4,352	MOSFET (Metal Oxide)	250V	430mA (Ta)	4.5V, 10V	2V @ 370µA	15.1nC @ 10V	262pF @ 25V	±20V	-	1.8W (Ta)	4 Ohm @ 430mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT223-4	TO-261-4, TO-261AA
BSP316PE6327T	Infineon Technologies	MOSFET P-CH 100V 0.68A SOT223 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 680mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 170µA Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 146pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 680mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock2,016	MOSFET (Metal Oxide)	100V	680mA (Ta)	4.5V, 10V	2V @ 170µA	6.4nC @ 10V	146pF @ 25V	±20V	-	1.8W (Ta)	1.8 Ohm @ 680mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT223-4	TO-261-4, TO-261AA
BSP315PE6327T	Infineon Technologies	MOSFET P-CH 60V 1.17A SOT-223 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 1.17A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 160µA Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 800 mOhm @ 1.17A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock2,288	MOSFET (Metal Oxide)	60V	1.17A (Ta)	4.5V, 10V	2V @ 160µA	7.8nC @ 10V	160pF @ 25V	±20V	-	1.8W (Ta)	800 mOhm @ 1.17A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT223-4	TO-261-4, TO-261AA
BSP295E6327T	Infineon Technologies	MOSFET N-CH 60V 1.8A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.8V @ 400µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 368pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock4,752	MOSFET (Metal Oxide)	60V	1.8A (Ta)	4.5V, 10V	1.8V @ 400µA	17nC @ 10V	368pF @ 25V	±20V	-	1.8W (Ta)	300 mOhm @ 1.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT223-4	TO-261-4, TO-261AA
BSP171PE6327T	Infineon Technologies	MOSFET P-CH 60V 1.9A SOT223 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 460µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock2,560	MOSFET (Metal Oxide)	60V	1.9A (Ta)	4.5V, 10V	2V @ 460µA	20nC @ 10V	460pF @ 25V	±20V	-	1.8W (Ta)	300 mOhm @ 1.9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT223-4	TO-261-4, TO-261AA
BSP170PE6327T	Infineon Technologies	MOSFET P-CH 60V 1.9A SOT223 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock6,160	MOSFET (Metal Oxide)	60V	1.9A (Ta)	10V	4V @ 250µA	14nC @ 10V	410pF @ 25V	±20V	-	1.8W (Ta)	300 mOhm @ 1.9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT223-4	TO-261-4, TO-261AA
BSP129E6327T	Infineon Technologies	MOSFET N-CH 240V 350MA SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 240V Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 0V, 10V Vgs(th) (Max) @ Id: 1V @ 108µA Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 108pF @ 25V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 6 Ohm @ 350mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock3,456	MOSFET (Metal Oxide)	240V	350mA (Ta)	0V, 10V	1V @ 108µA	5.7nC @ 5V	108pF @ 25V	±20V	Depletion Mode	1.8W (Ta)	6 Ohm @ 350mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT223-4	TO-261-4, TO-261AA
BSP123E6327T	Infineon Technologies	MOSFET N-CH 100V 370MA SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 370mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V Vgs(th) (Max) @ Id: 1.8V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.79W (Ta) Rds On (Max) @ Id, Vgs: 6 Ohm @ 370mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock3,296	MOSFET (Metal Oxide)	100V	370mA (Ta)	2.8V, 10V	1.8V @ 50µA	2.4nC @ 10V	70pF @ 25V	±20V	-	1.79W (Ta)	6 Ohm @ 370mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT223-4	TO-261-4, TO-261AA
BSO4822T	Infineon Technologies	MOSFET N-CH 30V 12.7A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 55µA Gate Charge (Qg) (Max) @ Vgs: 26.2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1640pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 10 mOhm @ 12.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock3,104	MOSFET (Metal Oxide)	30V	12.7A (Ta)	4.5V, 10V	2V @ 55µA	26.2nC @ 5V	1640pF @ 25V	±20V	-	2.5W (Ta)	10 mOhm @ 12.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
BSO4420T	Infineon Technologies	MOSFET N-CH 30V 13A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 80µA Gate Charge (Qg) (Max) @ Vgs: 33.7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2213pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 7.8 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock3,584	MOSFET (Metal Oxide)	30V	13A (Ta)	4.5V, 10V	2V @ 80µA	33.7nC @ 5V	2213pF @ 25V	±20V	-	2.5W (Ta)	7.8 mOhm @ 13A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
BSO4410T	Infineon Technologies	MOSFET N-CH 30V 11.1A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 42µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1280pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 13 mOhm @ 11.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock7,472	MOSFET (Metal Oxide)	30V	11.1A (Ta)	4.5V, 10V	2V @ 42µA	21nC @ 5V	1280pF @ 25V	±20V	-	2.5W (Ta)	13 mOhm @ 11.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
BSO201SPNTMA1	Infineon Technologies	MOSFET P-CH 20V 14.9A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 128nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 5962pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 8 mOhm @ 14.9A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock6,912	MOSFET (Metal Oxide)	20V	14.9A (Ta)	2.5V, 4.5V	1.2V @ 250µA	128nC @ 4.5V	5962pF @ 15V	±12V	-	2.5W (Ta)	8 mOhm @ 14.9A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
BSL211SPT	Infineon Technologies	MOSFET P-CH 20V 4.7A 6-TSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 12.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 654pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 67 mOhm @ 4.7A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: P-TSOP6-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock6,640	MOSFET (Metal Oxide)	20V	4.7A (Ta)	2.5V, 4.5V	1.2V @ 25µA	12.4nC @ 4.5V	654pF @ 15V	±12V	-	2W (Ta)	67 mOhm @ 4.7A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	P-TSOP6-6	SOT-23-6 Thin, TSOT-23-6
BSL207SPL6327HTSA1	Infineon Technologies	MOSFET P-CH 20V 6A 6-TSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 40µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1007pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 41 mOhm @ 6A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSOP6-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock5,696	MOSFET (Metal Oxide)	20V	6A (Ta)	2.5V, 4.5V	1.2V @ 40µA	20nC @ 4.5V	1007pF @ 15V	±12V	-	2W (Ta)	41 mOhm @ 6A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSOP6-6	SOT-23-6 Thin, TSOT-23-6
SPP42N03S2L13	Infineon Technologies	MOSFET N-CH 30V 42A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 37µA Gate Charge (Qg) (Max) @ Vgs: 30.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 12.9 mOhm @ 21A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	Package: TO-220-3	Stock6,384	MOSFET (Metal Oxide)	30V	42A (Tc)	4.5V, 10V	2V @ 37µA	30.5nC @ 10V	1130pF @ 25V	±20V	-	83W (Tc)	12.9 mOhm @ 21A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
SPP100N03S2L03	Infineon Technologies	MOSFET N-CH 30V 100A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8180pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 3 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	Package: TO-220-3	Stock3,216	MOSFET (Metal Oxide)	30V	100A (Tc)	10V	2V @ 250µA	220nC @ 10V	8180pF @ 25V	±20V	-	300W (Tc)	3 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
SPP100N03S203	Infineon Technologies	MOSFET N-CH 30V 100A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7020pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	Package: TO-220-3	Stock6,016	MOSFET (Metal Oxide)	30V	100A (Tc)	10V	4V @ 250µA	150nC @ 10V	7020pF @ 25V	±20V	-	300W (Tc)	3.3 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
SPI100N03S2L03	Infineon Technologies	MOSFET N-CH 30V 100A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8180pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 3 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3-1 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock6,704	MOSFET (Metal Oxide)	30V	100A (Tc)	10V	2V @ 250µA	220nC @ 10V	8180pF @ 25V	±20V	-	300W (Tc)	3 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO262-3-1	TO-262-3 Long Leads, I2Pak, TO-262AA
SPD30N03S2L10T	Infineon Technologies	MOSFET N-CH 30V 30A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 41.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,496	MOSFET (Metal Oxide)	30V	30A (Tc)	4.5V, 10V	2V @ 50µA	41.8nC @ 10V	1550pF @ 25V	±20V	-	100W (Tc)	10 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
SPD30N03S2L07T	Infineon Technologies	MOSFET N-CH 30V 30A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 85µA Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2530pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 6.7 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock120,012	MOSFET (Metal Oxide)	30V	30A (Tc)	4.5V, 10V	2V @ 85µA	68nC @ 10V	2530pF @ 25V	±20V	-	136W (Tc)	6.7 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
SPD100N03S2L04T	Infineon Technologies	MOSFET N-CH 30V 100A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 89.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3320pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-5 Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD	Package: TO-252-5, DPak (4 Leads + Tab), TO-252AD	Stock7,120	MOSFET (Metal Oxide)	30V	100A (Tc)	4.5V, 10V	2V @ 100µA	89.7nC @ 10V	3320pF @ 25V	±20V	-	150W (Tc)	4.2 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-5	TO-252-5, DPak (4 Leads + Tab), TO-252AD