Page 253 - Infineon Technologies Products - Transistors - FETs, MOSFETs - Single

SPI10N10
Infineon Technologies

MOSFET N-CH 100V 10.3A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock7,040
SPI100N08S2-07
Infineon Technologies

MOSFET N-CH 75V 100A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock2,864
SPI100N03S2-03
Infineon Technologies

MOSFET N-CH 30V 100A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock2,480
SPI07N65C3HKSA1
Infineon Technologies

MOSFET N-CH 650V 7.3A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock2,672
SPI07N60S5HKSA1
Infineon Technologies

MOSFET N-CH 600V 7.3A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock7,120
SPD50N06S2L-13
Infineon Technologies

MOSFET N-CH 55V 50A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock452,748
SPD50N03S2-07
Infineon Technologies

MOSFET N-CH 30V 50A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock1,075,200
SPD30N08S2L-21
Infineon Technologies

MOSFET N-CH 75V 30A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock164,748
SPD30N08S2-22
Infineon Technologies

MOSFET N-CH 75V 30A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock387,504
SPD30N06S2L-23
Infineon Technologies

MOSFET N-CH 55V 30A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock326,244
SPD30N06S2L-13
Infineon Technologies

MOSFET N-CH 55V 30A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock377,688
SPD30N06S2-23
Infineon Technologies

MOSFET N-CH 55V 30A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock190,608
SPD30N06S2-15
Infineon Technologies

MOSFET N-CH 55V 30A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock999,096
SPD26N06S2L-35
Infineon Technologies

MOSFET N-CH 55V 30A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock690,696
SPD25N06S2-40
Infineon Technologies

MOSFET N-CH 55V 29A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock162,948
SPD22N08S2L-50
Infineon Technologies

MOSFET N-CH 75V 25A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock142,812
SPD15N06S2L-64
Infineon Technologies

MOSFET N-CH 55V 19A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock1,770,672
SPD14N06S2-80
Infineon Technologies

MOSFET N-CH 55V 17A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock924,612
SPD08P06P
Infineon Technologies

MOSFET P-CH 60V 8.83A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock579,672
SPB80P06P
Infineon Technologies

MOSFET P-CH 60V 80A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock402,168

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
SPI10N10	Infineon Technologies	MOSFET N-CH 100V 10.3A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 10.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 21µA Gate Charge (Qg) (Max) @ Vgs: 19.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 426pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 170 mOhm @ 7.8A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3-1 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock7,040	MOSFET (Metal Oxide)	100V	10.3A (Tc)	10V	4V @ 21µA	19.4nC @ 10V	426pF @ 25V	±20V	-	50W (Tc)	170 mOhm @ 7.8A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO262-3-1	TO-262-3 Long Leads, I2Pak, TO-262AA
SPI100N08S2-07	Infineon Technologies	MOSFET N-CH 75V 100A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: PG-TO262-3-1 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock2,864	MOSFET (Metal Oxide)	75V	100A (Ta)	10V	-	-	-	±20V	-	-	-	-	Through Hole	PG-TO262-3-1	TO-262-3 Long Leads, I2Pak, TO-262AA
SPI100N03S2-03	Infineon Technologies	MOSFET N-CH 30V 100A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7020pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3-1 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock2,480	MOSFET (Metal Oxide)	30V	100A (Tc)	10V	4V @ 250µA	150nC @ 10V	7020pF @ 25V	±20V	-	300W (Tc)	3.3 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO262-3-1	TO-262-3 Long Leads, I2Pak, TO-262AA
SPI07N65C3HKSA1	Infineon Technologies	MOSFET N-CH 650V 7.3A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 350µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 4.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3-1 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock2,672	MOSFET (Metal Oxide)	650V	7.3A (Tc)	10V	3.9V @ 350µA	27nC @ 10V	790pF @ 25V	±20V	-	83W (Tc)	600 mOhm @ 4.6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO262-3-1	TO-262-3 Long Leads, I2Pak, TO-262AA
SPI07N60S5HKSA1	Infineon Technologies	MOSFET N-CH 600V 7.3A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 350µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 4.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3-1 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock7,120	MOSFET (Metal Oxide)	600V	7.3A (Tc)	10V	5.5V @ 350µA	35nC @ 10V	970pF @ 25V	±20V	-	83W (Tc)	600 mOhm @ 4.6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO262-3-1	TO-262-3 Long Leads, I2Pak, TO-262AA
SPD50N06S2L-13	Infineon Technologies	MOSFET N-CH 55V 50A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 80µA Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 12.7 mOhm @ 34A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: P-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock452,748	MOSFET (Metal Oxide)	55V	50A (Tc)	4.5V, 10V	2V @ 80µA	69nC @ 10V	2300pF @ 25V	±20V	-	136W (Tc)	12.7 mOhm @ 34A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	P-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
SPD50N03S2-07	Infineon Technologies	MOSFET N-CH 30V 50A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 85µA Gate Charge (Qg) (Max) @ Vgs: 46.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2170pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 7.3 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock1,075,200	MOSFET (Metal Oxide)	30V	50A (Tc)	10V	4V @ 85µA	46.5nC @ 10V	2170pF @ 25V	±20V	-	136W (Tc)	7.3 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
SPD30N08S2L-21	Infineon Technologies	MOSFET N-CH 75V 30A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 80µA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2130pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 20.5 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: P-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock164,748	MOSFET (Metal Oxide)	75V	30A (Tc)	4.5V, 10V	2V @ 80µA	72nC @ 10V	2130pF @ 25V	±20V	-	136W (Tc)	20.5 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	P-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
SPD30N08S2-22	Infineon Technologies	MOSFET N-CH 75V 30A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 80µA Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 21.5 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: P-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock387,504	MOSFET (Metal Oxide)	75V	30A (Tc)	10V	4V @ 80µA	57nC @ 10V	1950pF @ 25V	±20V	-	136W (Tc)	21.5 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	P-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
SPD30N06S2L-23	Infineon Technologies	MOSFET N-CH 55V 30A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1390pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 23 mOhm @ 22A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: P-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock326,244	MOSFET (Metal Oxide)	55V	30A (Tc)	4.5V, 10V	2V @ 50µA	42nC @ 10V	1390pF @ 25V	±20V	-	100W (Tc)	23 mOhm @ 22A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	P-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
SPD30N06S2L-13	Infineon Technologies	MOSFET N-CH 55V 30A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 80µA Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: P-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock377,688	MOSFET (Metal Oxide)	55V	30A (Tc)	4.5V, 10V	2V @ 80µA	69nC @ 10V	2300pF @ 25V	±20V	-	136W (Tc)	13 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	P-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
SPD30N06S2-23	Infineon Technologies	MOSFET N-CH 55V 30A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 23 mOhm @ 21A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: P-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock190,608	MOSFET (Metal Oxide)	55V	30A (Tc)	10V	4V @ 50µA	32nC @ 10V	1250pF @ 25V	±20V	-	-	23 mOhm @ 21A, 10V	-	Surface Mount	P-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
SPD30N06S2-15	Infineon Technologies	MOSFET N-CH 55V 30A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 80µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 14.7 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: P-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock999,096	MOSFET (Metal Oxide)	55V	30A (Tc)	10V	4V @ 80µA	52nC @ 10V	2070pF @ 25V	±20V	-	136W (Tc)	14.7 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	P-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
SPD26N06S2L-35	Infineon Technologies	MOSFET N-CH 55V 30A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 26µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 35 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: P-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock690,696	MOSFET (Metal Oxide)	55V	30A (Tc)	4.5V, 10V	2V @ 26µA	24nC @ 10V	790pF @ 25V	±20V	-	68W (Tc)	35 mOhm @ 13A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	P-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
SPD25N06S2-40	Infineon Technologies	MOSFET N-CH 55V 29A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 26µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 40 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: P-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock162,948	MOSFET (Metal Oxide)	55V	29A (Tc)	10V	4V @ 26µA	18nC @ 10V	710pF @ 25V	±20V	-	68W (Tc)	40 mOhm @ 13A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	P-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
SPD22N08S2L-50	Infineon Technologies	MOSFET N-CH 75V 25A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 31µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 50 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: P-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock142,812	MOSFET (Metal Oxide)	75V	25A (Tc)	4.5V, 10V	2V @ 31µA	33nC @ 10V	850pF @ 25V	±20V	-	75W (Tc)	50 mOhm @ 11A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	P-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
SPD15N06S2L-64	Infineon Technologies	MOSFET N-CH 55V 19A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 14µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 445pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 47W (Tc) Rds On (Max) @ Id, Vgs: 64 mOhm @ 8A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: P-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock1,770,672	MOSFET (Metal Oxide)	55V	19A (Tc)	4.5V, 10V	2V @ 14µA	13nC @ 10V	445pF @ 25V	±20V	-	47W (Tc)	64 mOhm @ 8A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	P-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
SPD14N06S2-80	Infineon Technologies	MOSFET N-CH 55V 17A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 14µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 80 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: P-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock924,612	MOSFET (Metal Oxide)	55V	17A (Tc)	10V	4V @ 14µA	10nC @ 10V	400pF @ 25V	±20V	-	30W (Tc)	80 mOhm @ 7A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	P-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
SPD08P06P	Infineon Technologies	MOSFET P-CH 60V 8.83A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8.83A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V Vgs (Max): - FET Feature: - Power Dissipation (Max): 42W (Tc) Rds On (Max) @ Id, Vgs: 300 mOhm @ 6.2A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock579,672	MOSFET (Metal Oxide)	60V	8.83A (Ta)	-	4V @ 250µA	13nC @ 10V	420pF @ 25V	-	-	42W (Tc)	300 mOhm @ 6.2A, 10V	-	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
SPB80P06P	Infineon Technologies	MOSFET P-CH 60V 80A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 5.5mA Gate Charge (Qg) (Max) @ Vgs: 173nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5033pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 340W (Tc) Rds On (Max) @ Id, Vgs: 23 mOhm @ 64A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock402,168	MOSFET (Metal Oxide)	60V	80A (Tc)	10V	4V @ 5.5mA	173nC @ 10V	5033pF @ 25V	±20V	-	340W (Tc)	23 mOhm @ 64A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SPB80N10L	Infineon Technologies	MOSFET N-CH 100V 80A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4540pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 58A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock390,708	MOSFET (Metal Oxide)	100V	80A (Tc)	4.5V, 10V	2V @ 2mA	240nC @ 10V	4540pF @ 25V	±20V	-	250W (Tc)	14 mOhm @ 58A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SPB80N08S2L-07	Infineon Technologies	MOSFET N-CH 75V 80A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 233nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6820pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 67A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock14,460	MOSFET (Metal Oxide)	75V	80A (Tc)	4.5V, 10V	2V @ 250µA	233nC @ 10V	6820pF @ 25V	±20V	-	300W (Tc)	6.8 mOhm @ 67A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SPB80N08S2-07	Infineon Technologies	MOSFET N-CH 75V 80A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6130pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 7.1 mOhm @ 66A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,608	MOSFET (Metal Oxide)	75V	80A (Tc)	10V	4V @ 250µA	180nC @ 10V	6130pF @ 25V	±20V	-	300W (Tc)	7.1 mOhm @ 66A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SPB80N06S2L-H5	Infineon Technologies	MOSFET N-CH 55V 80A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 230µA Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6640pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock12,252	MOSFET (Metal Oxide)	55V	80A (Tc)	4.5V, 10V	2V @ 230µA	190nC @ 10V	6640pF @ 25V	±20V	-	300W (Tc)	5 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SPB80N06S2L-11	Infineon Technologies	MOSFET N-CH 55V 80A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 93µA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2650pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 158W (Tc) Rds On (Max) @ Id, Vgs: 11 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock33,924	MOSFET (Metal Oxide)	55V	80A (Tc)	4.5V, 10V	2V @ 93µA	80nC @ 10V	2650pF @ 25V	±20V	-	158W (Tc)	11 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SPB80N06S2L-09	Infineon Technologies	MOSFET N-CH 55V 80A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 125µA Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3480pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 52A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock13,848	MOSFET (Metal Oxide)	55V	80A (Tc)	4.5V, 10V	2V @ 125µA	105nC @ 10V	3480pF @ 25V	±20V	-	190W (Tc)	8.5 mOhm @ 52A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SPB80N06S2L-07	Infineon Technologies	MOSFET N-CH 55V 80A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4210pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 210W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock42,552	MOSFET (Metal Oxide)	55V	80A (Tc)	4.5V, 10V	2V @ 150µA	130nC @ 10V	4210pF @ 25V	±20V	-	210W (Tc)	7 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SPB80N06S2L-06	Infineon Technologies	MOSFET N-CH 55V 80A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 180µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5050pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 69A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,984	MOSFET (Metal Oxide)	55V	80A (Tc)	4.5V, 10V	2V @ 180µA	150nC @ 10V	5050pF @ 25V	±20V	-	250W (Tc)	6.3 mOhm @ 69A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB