Page 292 - Infineon Technologies Products - Transistors - FETs, MOSFETs - Single

IRF9383MTR1PBF
Infineon Technologies

MOSFET P-CH 30V 22A DIRECTFET

Package: DirectFET? Isometric MX

Stock2,432
IRF7820PBF
Infineon Technologies

MOSFET N CH 200V 3.7A 8-SO

Package: 8-SOIC (0.154", 3.90mm Width)

Stock7,040
IRFS7440PBF
Infineon Technologies

MOSFET N CH 40V 120A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,744
IRFS7437PBF
Infineon Technologies

MOSFET N CH 40V 195A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock39,240
IRFR7440PBF
Infineon Technologies

MOSFET N CH 40V 90A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock390,396
IRFS7437-7PPBF
Infineon Technologies

MOSFET N CH 40V 195A D2PAK-7PIN

Package: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

Stock5,584
IPA50R380CE
Infineon Technologies

MOSFET N-CH 500V 9.9A TO220FP

Package: TO-220-3 Full Pack

Stock45,180
IPA50R650CE
Infineon Technologies

MOSFET N-CH 500V 6.1A TO220FP

Package: TO-220-3 Full Pack

Stock3,648
IPA50R190CE
Infineon Technologies

MOSFET N-CH 500V 18.5A TO220FP

Package: TO-220-3 Full Pack

Stock6,528
IPA50R800CE
Infineon Technologies

MOSFET N-CH 500V 5A PG-TO220 FPK

Package: TO-220-3 Full Pack

Stock117,240
BSZ023N04LSATMA1
Infineon Technologies

MOSFET N-CH 40V 22A TSDSON-8

Package: 8-PowerTDFN

Stock3,216
BTS121AE3045ANTMA1
Infineon Technologies

MOSFET N CH 100V 22A TO-220AB

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,424
IPA50R500CE
Infineon Technologies

MOSFET N-CH 500V 7.6A PG-TO220FP

Package: TO-220-3 Full Pack

Stock37,500
IPA50R280CE
Infineon Technologies

MOSFET N-CH 500V 13A PG-TO220FP

Package: TO-220-3 Full Pack

Stock427,212
IPD50R280CE
Infineon Technologies

MOSFET N-CH 500V 13A PG-TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,976
IPD50R950CE
Infineon Technologies

MOSFET N-CH 500V 4.3A PG-TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock152,400
IPA50R950CE
Infineon Technologies

MOSFET N-CH 500V 4.3A PG-TO220FP

Package: TO-220-3 Full Pack

Stock114,960
IRF4104GPBF
Infineon Technologies

MOSFET N CH 40V 75A TO220AB

Package: TO-220-3

Stock3,632
IRF3710ZGPBF
Infineon Technologies

MOSFET N-CH 100V 59A TO-220AB

Package: TO-220-3

Stock2,608
IRF1902GPBF
Infineon Technologies

MOSFET N-CH 20V 4.2A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock5,616

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF9383MTR1PBF	Infineon Technologies	MOSFET P-CH 30V 22A DIRECTFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 160A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7305pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 113W (Tc) Rds On (Max) @ Id, Vgs: 2.9 mOhm @ 22A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? MX Package / Case: DirectFET? Isometric MX	Package: DirectFET? Isometric MX	Stock2,432	MOSFET (Metal Oxide)	30V	22A (Ta), 160A (Tc)	4.5V, 10V	2.4V @ 150µA	130nC @ 10V	7305pF @ 15V	±20V	-	2.1W (Ta), 113W (Tc)	2.9 mOhm @ 22A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? MX	DirectFET? Isometric MX
IRF7820PBF	Infineon Technologies	MOSFET N CH 200V 3.7A 8-SO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 78 mOhm @ 2.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock7,040	MOSFET (Metal Oxide)	200V	3.7A (Ta)	10V	5V @ 100µA	44nC @ 10V	1750pF @ 100V	±20V	-	2.5W (Ta)	78 mOhm @ 2.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRFS7440PBF	Infineon Technologies	MOSFET N CH 40V 120A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.9V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4730pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,744	MOSFET (Metal Oxide)	40V	120A (Tc)	6V, 10V	3.9V @ 100µA	135nC @ 10V	4730pF @ 25V	±20V	-	208W (Tc)	2.5 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2Pak)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFS7437PBF	Infineon Technologies	MOSFET N CH 40V 195A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.9V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7330pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 1.8 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock39,240	MOSFET (Metal Oxide)	40V	195A (Tc)	6V, 10V	3.9V @ 150µA	225nC @ 10V	7330pF @ 25V	±20V	-	230W (Tc)	1.8 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFR7440PBF	Infineon Technologies	MOSFET N CH 40V 90A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.9V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 134nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4610pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 90A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock390,396	MOSFET (Metal Oxide)	40V	90A (Tc)	6V, 10V	3.9V @ 100µA	134nC @ 10V	4610pF @ 25V	±20V	-	140W (Tc)	2.4 mOhm @ 90A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRFS7437-7PPBF	Infineon Technologies	MOSFET N CH 40V 195A D2PAK-7PIN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.9V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7437pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 231W (Tc) Rds On (Max) @ Id, Vgs: 1.4 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA	Package: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA	Stock5,584	MOSFET (Metal Oxide)	40V	195A (Tc)	6V, 10V	3.9V @ 150µA	225nC @ 10V	7437pF @ 25V	±20V	-	231W (Tc)	1.4 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (7-Lead)	TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
IPA50R380CE	Infineon Technologies	MOSFET N-CH 500V 9.9A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 9.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 13V Vgs(th) (Max) @ Id: 3.5V @ 260µA Gate Charge (Qg) (Max) @ Vgs: 24.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 584pF @ 100V Vgs (Max): ±20V FET Feature: Super Junction Power Dissipation (Max): 29.2W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 3.2A, 13V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock45,180	MOSFET (Metal Oxide)	500V	9.9A (Tc)	13V	3.5V @ 260µA	24.8nC @ 10V	584pF @ 100V	±20V	Super Junction	29.2W (Tc)	380 mOhm @ 3.2A, 13V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO-220-FP	TO-220-3 Full Pack
IPA50R650CE	Infineon Technologies	MOSFET N-CH 500V 6.1A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 13V Vgs(th) (Max) @ Id: 3.5V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 342pF @ 100V Vgs (Max): ±20V FET Feature: Super Junction Power Dissipation (Max): 27.2W (Tc) Rds On (Max) @ Id, Vgs: 650 mOhm @ 1.8A, 13V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock3,648	MOSFET (Metal Oxide)	500V	6.1A (Tc)	13V	3.5V @ 150µA	15nC @ 10V	342pF @ 100V	±20V	Super Junction	27.2W (Tc)	650 mOhm @ 1.8A, 13V	-40°C ~ 150°C (TJ)	Through Hole	PG-TO-220-FP	TO-220-3 Full Pack
IPA50R190CE	Infineon Technologies	MOSFET N-CH 500V 18.5A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 13V Vgs(th) (Max) @ Id: 3.5V @ 510µA Gate Charge (Qg) (Max) @ Vgs: 47.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1137pF @ 100V Vgs (Max): ±20V FET Feature: Super Junction Power Dissipation (Max): 32W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 6.2A, 13V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock6,528	MOSFET (Metal Oxide)	500V	18.5A (Tc)	13V	3.5V @ 510µA	47.2nC @ 10V	1137pF @ 100V	±20V	Super Junction	32W (Tc)	190 mOhm @ 6.2A, 13V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO-220-FP	TO-220-3 Full Pack
IPA50R800CE	Infineon Technologies	MOSFET N-CH 500V 5A PG-TO220 FPK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 13V Vgs(th) (Max) @ Id: 3.5V @ 130µA Gate Charge (Qg) (Max) @ Vgs: 12.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 100V Vgs (Max): ±20V FET Feature: Super Junction Power Dissipation (Max): 26.4W (Tc) Rds On (Max) @ Id, Vgs: 800 mOhm @ 1.5A, 13V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock117,240	MOSFET (Metal Oxide)	500V	5A (Tc)	13V	3.5V @ 130µA	12.4nC @ 10V	280pF @ 100V	±20V	Super Junction	26.4W (Tc)	800 mOhm @ 1.5A, 13V	-40°C ~ 150°C (TJ)	Through Hole	PG-TO-220-FP	TO-220-3 Full Pack
BSZ023N04LSATMA1	Infineon Technologies	MOSFET N-CH 40V 22A TSDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2630pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 69W (Tc) Rds On (Max) @ Id, Vgs: 2.35 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock3,216	MOSFET (Metal Oxide)	40V	22A (Ta), 40A (Tc)	4.5V, 10V	2V @ 250µA	37nC @ 10V	2630pF @ 20V	±20V	-	2.1W (Ta), 69W (Tc)	2.35 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8	8-PowerTDFN
BTS121AE3045ANTMA1	Infineon Technologies	MOSFET N CH 100V 22A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 95W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 9.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-220AB Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,424	MOSFET (Metal Oxide)	100V	22A (Tc)	4.5V	2.5V @ 1mA	-	1500pF @ 25V	±10V	-	95W (Tc)	100 mOhm @ 9.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	TO-220AB	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPA50R500CE	Infineon Technologies	MOSFET N-CH 500V 7.6A PG-TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 13V Vgs(th) (Max) @ Id: 3.5V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 18.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 433pF @ 100V Vgs (Max): ±20V FET Feature: Super Junction Power Dissipation (Max): 28W (Tc) Rds On (Max) @ Id, Vgs: 500 mOhm @ 2.3A, 13V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock37,500	MOSFET (Metal Oxide)	500V	7.6A (Tc)	13V	3.5V @ 200µA	18.7nC @ 10V	433pF @ 100V	±20V	Super Junction	28W (Tc)	500 mOhm @ 2.3A, 13V	-40°C ~ 150°C (TJ)	Through Hole	PG-TO220FP	TO-220-3 Full Pack
IPA50R280CE	Infineon Technologies	MOSFET N-CH 500V 13A PG-TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 13V Vgs(th) (Max) @ Id: 3.5V @ 350µA Gate Charge (Qg) (Max) @ Vgs: 32.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 773pF @ 100V Vgs (Max): ±20V FET Feature: Super Junction Power Dissipation (Max): 30.4W (Tc) Rds On (Max) @ Id, Vgs: 280 mOhm @ 4.2A, 13V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock427,212	MOSFET (Metal Oxide)	500V	13A (Tc)	13V	3.5V @ 350µA	32.6nC @ 10V	773pF @ 100V	±20V	Super Junction	30.4W (Tc)	280 mOhm @ 4.2A, 13V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220FP	TO-220-3 Full Pack
IPD50R280CE	Infineon Technologies	MOSFET N-CH 500V 13A PG-TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 13V Vgs(th) (Max) @ Id: 3.5V @ 350µA Gate Charge (Qg) (Max) @ Vgs: 32.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 773pF @ 100V Vgs (Max): ±20V FET Feature: Super Junction Power Dissipation (Max): 92W (Tc) Rds On (Max) @ Id, Vgs: 280 mOhm @ 4.2A, 13V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,976	MOSFET (Metal Oxide)	500V	13A (Tc)	13V	3.5V @ 350µA	32.6nC @ 10V	773pF @ 100V	±20V	Super Junction	92W (Tc)	280 mOhm @ 4.2A, 13V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
IPD50R950CE	Infineon Technologies	MOSFET N-CH 500V 4.3A PG-TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 13V Vgs(th) (Max) @ Id: 3.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 231pF @ 100V Vgs (Max): ±20V FET Feature: Super Junction Power Dissipation (Max): 34W (Tc) Rds On (Max) @ Id, Vgs: 950 mOhm @ 1.2A, 13V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock152,400	MOSFET (Metal Oxide)	500V	4.3A (Tc)	13V	3.5V @ 100µA	10.5nC @ 10V	231pF @ 100V	±20V	Super Junction	34W (Tc)	950 mOhm @ 1.2A, 13V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
IPA50R950CE	Infineon Technologies	MOSFET N-CH 500V 4.3A PG-TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 13V Vgs(th) (Max) @ Id: 3.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 231pF @ 100V Vgs (Max): ±20V FET Feature: Super Junction Power Dissipation (Max): 25.7W (Tc) Rds On (Max) @ Id, Vgs: 950 mOhm @ 1.2A, 13V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock114,960	MOSFET (Metal Oxide)	500V	4.3A (Tc)	13V	3.5V @ 100µA	10.5nC @ 10V	231pF @ 100V	±20V	Super Junction	25.7W (Tc)	950 mOhm @ 1.2A, 13V	-40°C ~ 150°C (TJ)	Through Hole	PG-TO220FP	TO-220-3 Full Pack
IRF4104GPBF	Infineon Technologies	MOSFET N CH 40V 75A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock3,632	MOSFET (Metal Oxide)	40V	75A (Tc)	10V	4V @ 250µA	100nC @ 10V	3000pF @ 25V	±20V	-	140W (Tc)	5.5 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRF3710ZGPBF	Infineon Technologies	MOSFET N-CH 100V 59A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 59A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250mA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 18 mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock2,608	MOSFET (Metal Oxide)	100V	59A (Tc)	10V	4V @ 250mA	120nC @ 10V	2900pF @ 25V	±20V	-	160W (Tc)	18 mOhm @ 35A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRF1902GPBF	Infineon Technologies	MOSFET N-CH 20V 4.2A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 85 mOhm @ 4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock5,616	MOSFET (Metal Oxide)	20V	4.2A (Ta)	-	700mV @ 250µA	7.5nC @ 4.5V	310pF @ 15V	-	-	-	85 mOhm @ 4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
AUIRLZ44ZS	Infineon Technologies	MOSFET N-CH 55V 51A D2PAK FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: - Package / Case: -	Package: -	Stock7,088	-	-	-	4.5V, 10V	-	-	-	±16V	-	-	-	-55°C ~ 175°C (TJ)	Surface Mount	-	-
AUIRLS4030-7P	Infineon Technologies	MOSFET N-CH 100V 190A D2PAK-7P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 190A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 11490pF @ 50V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 370W (Tc) Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 110A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-7, D2Pak (6 Leads + Tab)	Package: TO-263-7, D2Pak (6 Leads + Tab)	Stock23,400	MOSFET (Metal Oxide)	100V	190A (Tc)	4.5V, 10V	2.5V @ 250µA	140nC @ 4.5V	11490pF @ 50V	±16V	-	370W (Tc)	3.9 mOhm @ 110A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (7-Lead)	TO-263-7, D2Pak (6 Leads + Tab)
AUIRLS4030	Infineon Technologies	MOSFET N-CH 100V 180A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 11360pF @ 50V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 370W (Tc) Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 110A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,584	MOSFET (Metal Oxide)	100V	180A (Tc)	4.5V, 10V	2.5V @ 250µA	130nC @ 4.5V	11360pF @ 50V	±16V	-	370W (Tc)	4.3 mOhm @ 110A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
AUIRLS3114Z	Infineon Technologies	MOSFET N-CH 40V 42A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 53nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3617pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 143W (Tc) Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 56A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252AA) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,944	MOSFET (Metal Oxide)	40V	56A (Tc)	10V	2.5V @ 100µA	53nC @ 4.5V	3617pF @ 25V	±16V	-	143W (Tc)	4.9 mOhm @ 56A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-PAK (TO-252AA)	TO-252-3, DPak (2 Leads + Tab), SC-63
AUIRLS3036-7P	Infineon Technologies	MOSFET N-CH 60V 300A D2PAK-7P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 160nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 11270pF @ 50V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 380W (Tc) Rds On (Max) @ Id, Vgs: 1.9 mOhm @ 180A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-7, D2Pak (6 Leads + Tab)	Package: TO-263-7, D2Pak (6 Leads + Tab)	Stock6,992	MOSFET (Metal Oxide)	60V	240A (Tc)	4.5V, 10V	2.5V @ 250µA	160nC @ 4.5V	11270pF @ 50V	±16V	-	380W (Tc)	1.9 mOhm @ 180A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (7-Lead)	TO-263-7, D2Pak (6 Leads + Tab)
AUIRLS3036	Infineon Technologies	MOSFET N-CH 60V 270A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 11210pF @ 50V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 380W (Tc) Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 165A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,976	MOSFET (Metal Oxide)	60V	195A (Tc)	4.5V, 10V	2.5V @ 250µA	140nC @ 4.5V	11210pF @ 50V	±16V	-	380W (Tc)	2.4 mOhm @ 165A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
AUIRLS3034-7P	Infineon Technologies	MOSFET N-CH 40V 240A D2PAK-7P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 10990pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 380W (Tc) Rds On (Max) @ Id, Vgs: 1.4 mOhm @ 200A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA	Package: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA	Stock127,800	MOSFET (Metal Oxide)	40V	240A (Tc)	4.5V, 10V	2.5V @ 250µA	180nC @ 4.5V	10990pF @ 40V	±20V	-	380W (Tc)	1.4 mOhm @ 200A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (7-Lead)	TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
AUIRLS3034	Infineon Technologies	MOSFET N-CH 40V 343A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 162nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 10315pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 195A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,056	MOSFET (Metal Oxide)	40V	195A (Tc)	4.5V, 10V	2.5V @ 250µA	162nC @ 4.5V	10315pF @ 25V	±20V	-	375W (Tc)	1.7 mOhm @ 195A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB