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Infineon Technologies |
MOSFET N-CH 60V 90A TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 93µA
- Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 167W (Tc)
- Rds On (Max) @ Id, Vgs: 3.7mOhm @ 90A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 60 V | 90A (Tc) | 4.5V, 10V | 2.2V @ 93µA | 79 nC @ 4.5 V | 13000 pF @ 30 V | ±20V | - | 167W (Tc) | 3.7mOhm @ 90A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 30V 22A/40A TSDSON
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 1.9mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSDSON-8-FL
- Package / Case: 8-PowerTDFN
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Package: - |
Stock14,844 |
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MOSFET (Metal Oxide) | 30 V | 22A (Ta), 40A (Tc) | 4.5V, 10V | 2V @ 250µA | 44 nC @ 10 V | 2800 pF @ 15 V | ±20V | - | - | 1.9mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 700V 4A TO251-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 700 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 40µA
- Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 400 V
- Input Capacitance (Ciss) (Max) @ Vds: 158 pF @ 400 V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 22.7W (Tc)
- Rds On (Max) @ Id, Vgs: 1.4Ohm @ 700mA, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO251-3
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 700 V | 4A (Tc) | 10V | 3.5V @ 40µA | 4.7 nC @ 400 V | 158 pF @ 400 V | ±16V | - | 22.7W (Tc) | 1.4Ohm @ 700mA, 10V | -40°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
AUTOMOTIVE_COOLMOS PG-TO247-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 2.91mA
- Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 11659 pF @ 400 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 446W (Tc)
- Rds On (Max) @ Id, Vgs: 22mOhm @ 58.2A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3
- Package / Case: TO-247-3
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Package: - |
Stock393 |
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MOSFET (Metal Oxide) | 650 V | 96A (Tc) | 10V | 4.5V @ 2.91mA | 234 nC @ 10 V | 11659 pF @ 400 V | ±20V | - | 446W (Tc) | 22mOhm @ 58.2A, 10V | -40°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
SILICON CARBIDE MOSFET
- FET Type: -
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOF-8-1
- Package / Case: 8-PowerSFN
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Package: - |
Stock6,000 |
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SiCFET (Silicon Carbide) | 650 V | - | 18V | - | - | - | - | - | - | - | - | Surface Mount | PG-HSOF-8-1 | 8-PowerSFN |
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Infineon Technologies |
TRENCH 40<-<100V
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 139A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.3V @ 80µA
- Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 150W (Tc)
- Rds On (Max) @ Id, Vgs: 2.85mOhm @ 70A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock5,769 |
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MOSFET (Metal Oxide) | 60 V | 24A (Ta), 139A (Tc) | 6V, 10V | 3.3V @ 80µA | 102 nC @ 10 V | 4600 pF @ 30 V | ±20V | - | 3W (Ta), 150W (Tc) | 2.85mOhm @ 70A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Infineon Technologies |
IC DISCRETE
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 150V 50A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
- Vgs(th) (Max) @ Id: 4V @ 90µA
- Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 75 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 20mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Package: - |
Stock5,232 |
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MOSFET (Metal Oxide) | 150 V | 50A (Tc) | 8V, 10V | 4V @ 90µA | 31 nC @ 10 V | 1820 pF @ 75 V | ±20V | - | 150W (Tc) | 20mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
TRENCH >=100V
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250 V
- Current - Continuous Drain (Id) @ 25°C: 93A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 10880 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 520W (Tc)
- Rds On (Max) @ Id, Vgs: 17.5mOhm @ 56A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3-901
- Package / Case: TO-247-3
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Package: - |
Stock1,200 |
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MOSFET (Metal Oxide) | 250 V | 93A (Tc) | 10V | 5V @ 250µA | 270 nC @ 10 V | 10880 pF @ 50 V | ±20V | - | 520W (Tc) | 17.5mOhm @ 56A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO247-3-901 | TO-247-3 |
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Infineon Technologies |
TRENCH 40<-<100V
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 223A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.3V @ 129µA
- Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 188W (Tc)
- Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-7-U02
- Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
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Package: - |
Stock1,284 |
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MOSFET (Metal Oxide) | 60 V | 35A (Ta), 223A (Tc) | 6V, 10V | 3.3V @ 129µA | 162 nC @ 10 V | 7300 pF @ 30 V | ±20V | - | 3.8W (Ta), 188W (Tc) | 1.7mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-U02 | TO-263-7, D2PAK (6 Leads + Tab) |
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Infineon Technologies |
MOSFET N-CH 80V 89A TO220-FP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 270µA
- Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 40 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 42W (Tc)
- Rds On (Max) @ Id, Vgs: 2.8mOhm @ 89A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-FP
- Package / Case: TO-220-3 Full Pack
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 80 V | 89A (Tc) | 6V, 10V | 3.5V @ 270µA | 206 nC @ 10 V | 14200 pF @ 40 V | ±20V | - | 42W (Tc) | 2.8mOhm @ 89A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH BARE DIE
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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Infineon Technologies |
MOSFET N-CH 75V 42A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75 V
- Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 110W (Tc)
- Rds On (Max) @ Id, Vgs: 22mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3-901|DPAK
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 75 V | 42A (Tc) | 10V | 4V @ 50µA | 51 nC @ 10 V | 1440 pF @ 25 V | ±20V | - | 110W (Tc) | 22mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-901|DPAK | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 14A 8SO
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.35V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 8.5mOhm @ 14A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 30 V | 14A (Ta) | 4.5V, 10V | 2.35V @ 25µA | 12 nC @ 4.5 V | 1040 pF @ 15 V | ±20V | - | 2.5W (Ta) | 8.5mOhm @ 14A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
N-CHANNEL POWER MOSFET
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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Infineon Technologies |
TRENCH >=100V PG-TDSON-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 192A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
- Vgs(th) (Max) @ Id: 3.3V @ 116µA
- Gate Charge (Qg) (Max) @ Vgs: 72.5 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 217W (Tc)
- Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8 FL
- Package / Case: 8-PowerTDFN
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Package: - |
Stock16,332 |
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MOSFET (Metal Oxide) | 100 V | 23A (Ta), 192A (Tc) | 8V, 10V | 3.3V @ 116µA | 72.5 nC @ 10 V | 5500 pF @ 50 V | ±20V | - | 3W (Ta), 217W (Tc) | 2.7mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8 FL | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 15A 5X6 PQFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 44A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 2.35V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 1125 pF @ 15 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 8.1mOhm @ 15A, 10V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: PQFN (5x6) Single Die
- Package / Case: 8-PowerVDFN
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 30 V | 15A (Ta), 44A (Tc) | - | 2.35V @ 25µA | 12 nC @ 4.5 V | 1125 pF @ 15 V | - | - | - | 8.1mOhm @ 15A, 10V | - | Surface Mount | PQFN (5x6) Single Die | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 650V 11A TO263-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 240µA
- Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 996 pF @ 400 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 63W (Tc)
- Rds On (Max) @ Id, Vgs: 225mOhm @ 4.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 650 V | 11A (Tc) | 10V | 4V @ 240µA | 20 nC @ 10 V | 996 pF @ 400 V | ±20V | - | 63W (Tc) | 225mOhm @ 4.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 75A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): 140W (Tc)
- Rds On (Max) @ Id, Vgs: 5.5mOhm @ 75A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 40 V | 75A (Tc) | - | 4V @ 250µA | 100 nC @ 10 V | 3000 pF @ 25 V | - | - | 140W (Tc) | 5.5mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 800V 4A TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.9V @ 240µA
- Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 63W (Tc)
- Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3
- Package / Case: TO-220-3
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 800 V | 4A (Tc) | 10V | 3.9V @ 240µA | 31 nC @ 10 V | 570 pF @ 100 V | ±20V | - | 63W (Tc) | 1.3Ohm @ 2.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
OPTIMOS LOWVOLTAGE POWER MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 132A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.3V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
- Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-WHSON-8-1
- Package / Case: 8-PowerWDFN
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Package: - |
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MOSFET (Metal Oxide) | 60 V | 21A (Ta), 132A (Tc) | 6V, 10V | 3.3V @ 50µA | 49 nC @ 10 V | 3800 pF @ 30 V | ±20V | - | 2.5W (Ta), 100W (Tc) | 3mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-WHSON-8-1 | 8-PowerWDFN |
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Infineon Technologies |
MOSFET N-CH 60V 30A TSDSON-8-32
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 2.2V @ 10µA
- Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 30 V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 33W (Tc)
- Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSDSON-8-32
- Package / Case: 8-PowerTDFN
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Package: - |
Stock73,965 |
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MOSFET (Metal Oxide) | 60 V | 30A (Tj) | - | 2.2V @ 10µA | 12.2 nC @ 10 V | 888 pF @ 30 V | ±16V | - | 33W (Tc) | 14mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TSDSON-8-32 | 8-PowerTDFN |
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Infineon Technologies |
TRENCH >=100V
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
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Infineon Technologies |
TRENCH 40<-<100V
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 447A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 163µA
- Gate Charge (Qg) (Max) @ Vgs: 202 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 333W (Tc)
- Rds On (Max) @ Id, Vgs: 0.86mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSON-8-U04
- Package / Case: 8-PowerTDFN
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Package: - |
Stock14,523 |
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MOSFET (Metal Oxide) | 60 V | 42A (Ta), 447A (Tc) | 4.5V, 10V | 2.3V @ 163µA | 202 nC @ 10 V | 14000 pF @ 30 V | ±20V | - | 3W (Ta), 333W (Tc) | 0.86mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TSON-8-U04 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 900V 36A TO247-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900 V
- Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 2.9mA
- Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 417W (Tc)
- Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3-21
- Package / Case: TO-247-3
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Package: - |
Stock609 |
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MOSFET (Metal Oxide) | 900 V | 36A (Tc) | 10V | 3.5V @ 2.9mA | 270 nC @ 10 V | 6800 pF @ 100 V | ±20V | - | 417W (Tc) | 120mOhm @ 26A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3-21 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 600V 5.7A TO252-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 170µA
- Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 373 pF @ 100 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 48W (Tc)
- Rds On (Max) @ Id, Vgs: 750mOhm @ 2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
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MOSFET (Metal Oxide) | 600 V | 5.7A (Tc) | 10V | 3.5V @ 170µA | 17.2 nC @ 10 V | 373 pF @ 100 V | ±20V | - | 48W (Tc) | 750mOhm @ 2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Infineon Technologies |
TRENCH 40<-<100V PG-HSOG-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 184A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 108µA
- Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 40 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
- Rds On (Max) @ Id, Vgs: 2.5mOhm @ 150A 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOG-8-1
- Package / Case: 8-PowerSMD, Gull Wing
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 80 V | 28A (Ta), 184A (Tc) | 6V, 10V | 3.8V @ 108µA | 87 nC @ 10 V | 6500 pF @ 40 V | ±20V | - | 3.8W (Ta), 167W (Tc) | 2.5mOhm @ 150A 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOG-8-1 | 8-PowerSMD, Gull Wing |
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Infineon Technologies |
MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 351A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 267µA
- Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 40 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
- Rds On (Max) @ Id, Vgs: 1.23mOhm @ 150A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOF-8
- Package / Case: 8-PowerSFN
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Package: - |
Stock6,126 |
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MOSFET (Metal Oxide) | 80 V | 39A (Ta), 351A (Tc) | 6V, 10V | 3.8V @ 267µA | 255 nC @ 10 V | 12000 pF @ 40 V | ±20V | - | 3.8W (Ta), 300W (Tc) | 1.23mOhm @ 150A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOF-8 | 8-PowerSFN |