|
|
Infineon Technologies |
MOSFET N-CH 60V 13A/48A TDSON
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 48A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.3V @ 14µA
- Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1075 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 43W (Tc)
- Rds On (Max) @ Id, Vgs: 9.7mOhm @ 40A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-1
- Package / Case: 8-PowerTDFN
|
Package: - |
Stock12,675 |
|
MOSFET (Metal Oxide) | 60 V | 13A (Ta), 48A (Tc) | 6V, 10V | 3.3V @ 14µA | 15 nC @ 10 V | 1075 pF @ 30 V | ±20V | - | 3W (Ta), 43W (Tc) | 9.7mOhm @ 40A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
|
|
Infineon Technologies |
MOSFET
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
Infineon Technologies |
MOSFET_(75V 120V( PG-HSOF-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 360A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 275µA
- Gate Charge (Qg) (Max) @ Vgs: 216 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 16011 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 375W (Tc)
- Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOF-8-1
- Package / Case: 8-PowerSFN
|
Package: - |
Stock8,859 |
|
MOSFET (Metal Oxide) | 100 V | 360A (Tj) | 6V, 10V | 3.8V @ 275µA | 216 nC @ 10 V | 16011 pF @ 50 V | ±20V | - | 375W (Tc) | 1.4mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOF-8-1 | 8-PowerSFN |
|
|
Infineon Technologies |
HIGH POWER_NEW
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
|
Package: - |
Stock8,940 |
|
- | - | 18A (Tc) | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
Infineon Technologies |
MOSFET N-CH 600V 23.8A TO220-FP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 750µA
- Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 100 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 34W (Tc)
- Rds On (Max) @ Id, Vgs: 160mOhm @ 11.3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-FP
- Package / Case: TO-220-3 Full Pack
|
Package: - |
Stock1,500 |
|
MOSFET (Metal Oxide) | 600 V | 23.8A (Tc) | 10V | 3.5V @ 750µA | 75 nC @ 10 V | 1660 pF @ 100 V | ±20V | - | 34W (Tc) | 160mOhm @ 11.3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
|
|
Infineon Technologies |
MOSFET N-CH 200V 3.8A PQFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 50 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 99.9mOhm @ 5.8A, 10V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: PQFN (5x6)
- Package / Case: 8-VQFN Exposed Pad
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 200 V | 3.8A (Ta), 20A (Tc) | - | 5V @ 100µA | 30 nC @ 10 V | 1380 pF @ 50 V | - | - | - | 99.9mOhm @ 5.8A, 10V | - | Surface Mount | PQFN (5x6) | 8-VQFN Exposed Pad |
|
|
Infineon Technologies |
MOSFET N-CH 600V 13A THIN-PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 140µA
- Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 534 pF @ 400 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 74W (Tc)
- Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-52
- Package / Case: 8-PowerTDFN
|
Package: - |
Stock26,787 |
|
MOSFET (Metal Oxide) | 600 V | 13A (Tc) | 10V | 4.5V @ 140µA | 12.7 nC @ 10 V | 534 pF @ 400 V | ±20V | - | 74W (Tc) | 360mOhm @ 2.9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-52 | 8-PowerTDFN |
|
|
Infineon Technologies |
MOSFET_)40V 60V)
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
|
Package: - |
Stock5,400 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
Infineon Technologies |
SICFET N-CH 1700V 5.2A TO263-7
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1700 V
- Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 12V, 15V
- Vgs(th) (Max) @ Id: 5.7V @ 1.1mA
- Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 12 V
- Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 1000 V
- Vgs (Max): +20V, -10V
- FET Feature: -
- Power Dissipation (Max): 68W (Tc)
- Rds On (Max) @ Id, Vgs: 1000mOhm @ 1A, 15V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-7-13
- Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
|
Package: - |
Stock1,764 |
|
SiCFET (Silicon Carbide) | 1700 V | 5.2A (Tc) | 12V, 15V | 5.7V @ 1.1mA | 5 nC @ 12 V | 275 pF @ 1000 V | +20V, -10V | - | 68W (Tc) | 1000mOhm @ 1A, 15V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-13 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
|
|
Infineon Technologies |
TRENCH PG-TO220-3
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
|
Package: - |
Stock2,775 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
Infineon Technologies |
TRENCH <= 40V
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 197A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.4V @ 189µA
- Gate Charge (Qg) (Max) @ Vgs: 239 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
- Rds On (Max) @ Id, Vgs: 1.25mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
|
Package: - |
Stock2,400 |
|
MOSFET (Metal Oxide) | 40 V | 41A (Ta), 197A (Tc) | 6V, 10V | 3.4V @ 189µA | 239 nC @ 10 V | 11300 pF @ 20 V | ±20V | - | 3.8W (Ta), 250W (Tc) | 1.25mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
|
|
Infineon Technologies |
MOSFET N-CH 500V 7.6A TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 13V
- Vgs(th) (Max) @ Id: 3.5V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 433 pF @ 100 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 500mOhm @ 2.3A, 13V
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 500 V | 7.6A (Tc) | 13V | 3.5V @ 200µA | 18.7 nC @ 10 V | 433 pF @ 100 V | ±20V | - | - | 500mOhm @ 2.3A, 13V | - | Through Hole | PG-TO220-3-1 | TO-220-3 |
|
|
Infineon Technologies |
TRENCH >=100V
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 144W (Tc)
- Rds On (Max) @ Id, Vgs: 72.5mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-904
- Package / Case: TO-220-3
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 200 V | 25A (Tc) | 10V | 5V @ 100µA | 38 nC @ 10 V | 1710 pF @ 50 V | ±20V | - | 144W (Tc) | 72.5mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-904 | TO-220-3 |
|
|
Infineon Technologies |
MOSFET N-CH 600V 7.3A TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 63W (Tc)
- Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3
- Package / Case: TO-220-3
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 7.3A (Tc) | 10V | 3.5V @ 200µA | 20.5 nC @ 10 V | 440 pF @ 100 V | ±20V | - | 63W (Tc) | 600mOhm @ 2.4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
|
|
Infineon Technologies |
MOSFET N-CH 30V 8.8A PQFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 2.35V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 16mOhm @ 8.5A, 10V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSDSON-6
- Package / Case: 6-PowerVDFN
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 8.8A (Ta), 19A (Tc) | - | 2.35V @ 25µA | 8.7 nC @ 10 V | 600 pF @ 25 V | - | - | - | 16mOhm @ 8.5A, 10V | - | Surface Mount | PG-TSDSON-6 | 6-PowerVDFN |
|
|
Infineon Technologies |
MOSFET N CH
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 340µA
- Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 400 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 83W (Tc)
- Rds On (Max) @ Id, Vgs: 145mOhm @ 6.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA (DPAK)
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
|
Package: - |
Stock26,334 |
|
MOSFET (Metal Oxide) | 600 V | 16A (Tc) | 10V | 4.5V @ 340µA | 31 nC @ 10 V | 1330 pF @ 400 V | ±20V | - | 83W (Tc) | 145mOhm @ 6.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252AA (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
|
|
Infineon Technologies |
N-CHANNEL POWER MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 240 V
- Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
- Vgs(th) (Max) @ Id: 1V @ 108µA
- Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds: 108 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 1.8W (Ta)
- Rds On (Max) @ Id, Vgs: 6Ohm @ 350mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT223-4-21
- Package / Case: TO-261-4, TO-261AA
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 240 V | 350mA (Ta) | 0V, 10V | 1V @ 108µA | 5.7 nC @ 5 V | 108 pF @ 25 V | ±20V | Depletion Mode | 1.8W (Ta) | 6Ohm @ 350mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4-21 | TO-261-4, TO-261AA |
|
|
Infineon Technologies |
MOSFET N-CH 650V 10A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 140µA
- Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 534 pF @ 400 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 23W (Tc)
- Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-FP
- Package / Case: TO-220-3 Full Pack
|
Package: - |
Stock1,182 |
|
MOSFET (Metal Oxide) | 650 V | 10A (Tc) | 10V | 4.5V @ 140µA | 12.7 nC @ 10 V | 534 pF @ 400 V | ±20V | - | 23W (Tc) | 360mOhm @ 2.9A, 10V | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
|
|
Infineon Technologies |
SIC DISCRETE
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
|
Package: - |
Stock2,682 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
Infineon Technologies |
MOSFET 200V 50A DIE
- FET Type: -
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 50A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 40mOhm @ 50A, 10V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 200 V | 50A | 10V | - | - | - | - | - | - | 40mOhm @ 50A, 10V | - | Surface Mount | Die | Die |
|
|
Infineon Technologies |
SIC DISCRETE
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
- Vgs(th) (Max) @ Id: 5.2V @ 8.3mA
- Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds: 1620 nF @ 25 V
- Vgs (Max): +20V, -5V
- FET Feature: -
- Power Dissipation (Max): 227W (Tc)
- Rds On (Max) @ Id, Vgs: 54.4mOhm @ 19.3A, 18V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-4-8
- Package / Case: TO-247-4
|
Package: - |
Stock63 |
|
SiCFET (Silicon Carbide) | 1200 V | 55A (Tc) | 15V, 18V | 5.2V @ 8.3mA | 39 nC @ 18 V | 1620 nF @ 25 V | +20V, -5V | - | 227W (Tc) | 54.4mOhm @ 19.3A, 18V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO247-4-8 | TO-247-4 |
|
|
Infineon Technologies |
GANFET N-CH
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
- Vgs (Max): -10V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-DSO-20-87
- Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)
|
Package: - |
Stock3,237 |
|
GaNFET (Gallium Nitride) | 600 V | 31A (Tc) | - | 1.6V @ 2.6mA | - | 380 pF @ 400 V | -10V | - | 125W (Tc) | - | -55°C ~ 150°C (TJ) | Surface Mount | PG-DSO-20-87 | 20-PowerSOIC (0.433", 11.00mm Width) |
|
|
Infineon Technologies |
GANFET N-CH 600V 31A 20DSO
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
- Vgs (Max): -10V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-DSO-20-87
- Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)
|
Package: - |
Request a Quote |
|
GaNFET (Gallium Nitride) | 600 V | 31A (Tc) | - | 1.6V @ 2.6mA | - | 380 pF @ 400 V | -10V | - | 125W (Tc) | - | -55°C ~ 150°C (TJ) | Surface Mount | PG-DSO-20-87 | 20-PowerSOIC (0.433", 11.00mm Width) |
|
|
Infineon Technologies |
TRENCH PG-TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 121A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.4V @ 81µA
- Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
- Rds On (Max) @ Id, Vgs: 2.6mOhm @ 70A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-U05
- Package / Case: TO-220-3
|
Package: - |
Stock2,982 |
|
MOSFET (Metal Oxide) | 40 V | 29A (Ta), 121A (Tc) | 6V, 10V | 3.4V @ 81µA | 102 nC @ 10 V | 4800 pF @ 20 V | ±20V | - | 3.8W (Ta), 150W (Tc) | 2.6mOhm @ 70A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-U05 | TO-220-3 |
|
|
Infineon Technologies |
TRENCH 40<-<100V
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 182A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 139µA
- Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 40 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
- Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3
- Package / Case: TO-220-3
|
Package: - |
Stock879 |
|
MOSFET (Metal Oxide) | 80 V | 28A (Ta), 182A (Tc) | 6V, 10V | 3.8V @ 139µA | 133 nC @ 10 V | 6200 pF @ 40 V | ±20V | - | 3.8W (Ta), 214W (Tc) | 2.4mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
|
|
Infineon Technologies |
MOSFET N-CH 30V 24A PQFN56
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 104A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 2.35V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 4270 pF @ 15 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): 3.4W (Ta)
- Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PQFN (5x6) Single Die
- Package / Case: 8-PowerVDFN
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 24A (Ta), 104A (Tc) | - | 2.35V @ 100µA | 51 nC @ 4.5 V | 4270 pF @ 15 V | - | - | 3.4W (Ta) | 3.3mOhm @ 25A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) Single Die | 8-PowerVDFN |
|
|
Infineon Technologies |
MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 139A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 93µA
- Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
- Rds On (Max) @ Id, Vgs: 4.25mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-7
- Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
|
Package: - |
Stock843 |
|
MOSFET (Metal Oxide) | 100 V | 21A (Ta), 139A (Tc) | 6V, 10V | 3.8V @ 93µA | 85 nC @ 10 V | 4000 pF @ 50 V | ±20V | - | 3.8W (Ta), 167W (Tc) | 4.25mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7 | TO-263-7, D2PAK (6 Leads + Tab) |
|
|
Infineon Technologies |
TRENCH 40<-<100V PG-HSOF-5
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 290A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 148µA
- Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 40 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 313W (Tc)
- Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOF-5-1
- Package / Case: 5-PowerSFN
|
Package: - |
Stock3,783 |
|
MOSFET (Metal Oxide) | 80 V | 32A (Ta), 290A (Tc) | 6V, 10V | 3.8V @ 148µA | 132 nC @ 10 V | 6600 pF @ 40 V | ±20V | - | 3.8W (Ta), 313W (Tc) | 1.9mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOF-5-1 | 5-PowerSFN |