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Infineon Technologies |
MOSFET N-CH 800V 11A TO220FP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.9V @ 680µA
- Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 34W (Tc)
- Rds On (Max) @ Id, Vgs: 450 mOhm @ 7.1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-FP
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock704,808 |
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MOSFET (Metal Oxide) | 800V | 11A (Tc) | 10V | 3.9V @ 680µA | 85nC @ 10V | 1600pF @ 100V | ±20V | - | 34W (Tc) | 450 mOhm @ 7.1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 100V 190A D2PAK-7
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 190A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 9830pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 380W (Tc)
- Rds On (Max) @ Id, Vgs: 4 mOhm @ 110A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
|
Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
Stock18,540 |
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MOSFET (Metal Oxide) | 100V | 190A (Tc) | 10V | 4V @ 250µA | 230nC @ 10V | 9830pF @ 50V | ±20V | - | 380W (Tc) | 4 mOhm @ 110A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
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Infineon Technologies |
MOSFET N-CH 150V DIRECTFET L8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6660pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
- Rds On (Max) @ Id, Vgs: 11 mOhm @ 40A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DIRECTFET L8
- Package / Case: DirectFET? Isometric L8
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Package: DirectFET? Isometric L8 |
Stock117,468 |
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MOSFET (Metal Oxide) | 150V | 375A (Tc) | 10V | 5V @ 250µA | 150nC @ 10V | 6660pF @ 25V | ±20V | - | 3.3W (Ta), 125W (Tc) | 11 mOhm @ 40A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET L8 | DirectFET? Isometric L8 |
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Infineon Technologies |
MOSFET N-CH 100V 100A TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 117nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 8410pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 214W (Tc)
- Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO-220-3
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock77,052 |
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MOSFET (Metal Oxide) | 100V | 100A (Tc) | 6V, 10V | 3.5V @ 150µA | 117nC @ 10V | 8410pF @ 50V | ±20V | - | 214W (Tc) | 4.5 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 75V DIRECTFET L8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 375A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 12222pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
- Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 96A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DIRECTFET L8
- Package / Case: DirectFET? Isometric L8
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Package: DirectFET? Isometric L8 |
Stock32,148 |
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MOSFET (Metal Oxide) | 75V | 26A (Ta), 375A (Tc) | 10V | 4V @ 250µA | 300nC @ 10V | 12222pF @ 25V | ±20V | - | 3.3W (Ta), 125W (Tc) | 2.3 mOhm @ 96A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET L8 | DirectFET? Isometric L8 |
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Infineon Technologies |
MOSFET N-CH 100V DIRECTFET L8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 11560pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
- Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 74A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DIRECTFET L8
- Package / Case: DirectFET? Isometric L8
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Package: DirectFET? Isometric L8 |
Stock32,664 |
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MOSFET (Metal Oxide) | 100V | 375A (Tc) | 10V | 4V @ 250µA | 300nC @ 10V | 11560pF @ 25V | ±20V | - | 3.3W (Ta), 125W (Tc) | 3.5 mOhm @ 74A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET L8 | DirectFET? Isometric L8 |
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Infineon Technologies |
MOSFET N-CH 100V 180A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 215nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 9575pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 375W (Tc)
- Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 106A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock140,400 |
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MOSFET (Metal Oxide) | 100V | 180A (Tc) | 10V | 4V @ 250µA | 215nC @ 10V | 9575pF @ 50V | ±20V | - | 375W (Tc) | 4.7 mOhm @ 106A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 104A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 130nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 200W (Tc)
- Rds On (Max) @ Id, Vgs: 8 mOhm @ 54A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock15,504 |
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MOSFET (Metal Oxide) | 55V | 104A (Tc) | 4V, 10V | 2V @ 250µA | 130nC @ 5V | 5000pF @ 25V | ±16V | - | 200W (Tc) | 8 mOhm @ 54A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 800V 17A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.9V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 177nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 227W (Tc)
- Rds On (Max) @ Id, Vgs: 290 mOhm @ 11A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock1,362,132 |
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MOSFET (Metal Oxide) | 800V | 17A (Tc) | 10V | 3.9V @ 1mA | 177nC @ 10V | 2300pF @ 100V | ±20V | - | 227W (Tc) | 290 mOhm @ 11A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 80V 120A TO263-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 270µA
- Gate Charge (Qg) (Max) @ Vgs: 206nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 14200pF @ 40V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock44,784 |
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MOSFET (Metal Oxide) | 80V | 120A (Tc) | 6V, 10V | 3.5V @ 270µA | 206nC @ 10V | 14200pF @ 40V | ±20V | - | 300W (Tc) | 2.5 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 60V 120A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4520pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 230W (Tc)
- Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 75A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock19,512 |
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MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 4V @ 150µA | 120nC @ 10V | 4520pF @ 50V | ±20V | - | 230W (Tc) | 4.2 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 300A 8HSOF
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 230µA
- Gate Charge (Qg) (Max) @ Vgs: 287nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 22945pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 429W (Tc)
- Rds On (Max) @ Id, Vgs: 0.77 mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: H-PSOF-8-1
- Package / Case: 8-PowerSFN
|
Package: 8-PowerSFN |
Stock33,840 |
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MOSFET (Metal Oxide) | 40V | 300A (Tc) | 10V | 4V @ 230µA | 287nC @ 10V | 22945pF @ 25V | ±20V | - | 429W (Tc) | 0.77 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | H-PSOF-8-1 | 8-PowerSFN |
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Infineon Technologies |
MOSFET N-CH 55V 110A TO-247AC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 200W (Tc)
- Rds On (Max) @ Id, Vgs: 8 mOhm @ 59A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AC
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock161,508 |
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MOSFET (Metal Oxide) | 55V | 110A (Tc) | 10V | 4V @ 250µA | 170nC @ 10V | 4000pF @ 25V | ±20V | - | 200W (Tc) | 8 mOhm @ 59A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 900V 15A TO-263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 208W (Tc)
- Rds On (Max) @ Id, Vgs: 340 mOhm @ 9.2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock13,392 |
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MOSFET (Metal Oxide) | 900V | 15A (Tc) | 10V | 3.5V @ 1mA | 11nC @ 10V | 2400pF @ 100V | ±20V | - | 208W (Tc) | 340 mOhm @ 9.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 46A DIRECTFETL8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 270A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 11880pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 125W (Tc)
- Rds On (Max) @ Id, Vgs: 1 mOhm @ 160A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DIRECTFET L8
- Package / Case: DirectFET? Isometric L8
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Package: DirectFET? Isometric L8 |
Stock35,850 |
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MOSFET (Metal Oxide) | 40V | 46A (Ta), 270A (Tc) | 10V | 4V @ 250µA | 330nC @ 10V | 11880pF @ 25V | ±20V | - | 3.8W (Ta), 125W (Tc) | 1 mOhm @ 160A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET L8 | DirectFET? Isometric L8 |
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Infineon Technologies |
MOSFET N-CH 30V 300A 8HSOF
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 163nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 24000pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
- Rds On (Max) @ Id, Vgs: 0.4 mOhm @ 150A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOF-8-1
- Package / Case: 8-PowerSFN
|
Package: 8-PowerSFN |
Stock19,104 |
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MOSFET (Metal Oxide) | 30V | 300A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 163nC @ 4.5V | 24000pF @ 15V | ±20V | - | 3.8W (Ta), 300W (Tc) | 0.4 mOhm @ 150A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-HSOF-8-1 | 8-PowerSFN |
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Infineon Technologies |
MOSFET N-CH 60V 195A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 140nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 11210pF @ 50V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 380W (Tc)
- Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 165A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock112,044 |
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MOSFET (Metal Oxide) | 60V | 195A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 140nC @ 4.5V | 11210pF @ 50V | ±16V | - | 380W (Tc) | 2.4 mOhm @ 165A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 60V 180A TO263-7
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 196µA
- Gate Charge (Qg) (Max) @ Vgs: 166nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-7
- Package / Case: TO-263-7, D2Pak (6 Leads + Tab)
|
Package: TO-263-7, D2Pak (6 Leads + Tab) |
Stock21,258 |
|
MOSFET (Metal Oxide) | 60V | 180A (Tc) | 4.5V, 10V | 2.2V @ 196µA | 166nC @ 4.5V | 28000pF @ 30V | ±20V | - | 250W (Tc) | 1.6 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7 | TO-263-7, D2Pak (6 Leads + Tab) |
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Infineon Technologies |
MOSFET N-CH 100V 180A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 130nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 11360pF @ 50V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 370W (Tc)
- Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 110A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock444,540 |
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MOSFET (Metal Oxide) | 100V | 180A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 130nC @ 4.5V | 11360pF @ 50V | ±16V | - | 370W (Tc) | 4.3 mOhm @ 110A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 240A D2PAK7
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 9130pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 380W (Tc)
- Rds On (Max) @ Id, Vgs: 1.25 mOhm @ 195A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK (7-Lead)
- Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
|
Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
Stock18,624 |
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MOSFET (Metal Oxide) | 40V | 240A (Tc) | 10V | 4V @ 250µA | 240nC @ 10V | 9130pF @ 25V | ±20V | - | 380W (Tc) | 1.25 mOhm @ 195A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
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Infineon Technologies |
MOSFET P-CH 55V 42A TO-262
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 170W (Tc)
- Rds On (Max) @ Id, Vgs: 20 mOhm @ 42A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-262
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock3,600 |
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MOSFET (Metal Oxide) | 55V | 42A (Tc) | 10V | 4V @ 250µA | 180nC @ 10V | 3500pF @ 25V | ±20V | - | 170W (Tc) | 20 mOhm @ 42A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Infineon Technologies |
MOSFET P-CH 100V 38A D2PAK
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2780pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 170W (Tc)
- Rds On (Max) @ Id, Vgs: 60 mOhm @ 38A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock985,248 |
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MOSFET (Metal Oxide) | 100V | 38A (Tc) | 10V | 4V @ 250µA | 230nC @ 10V | 2780pF @ 25V | ±20V | - | 3.1W (Ta), 170W (Tc) | 60 mOhm @ 38A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 180A TO263-7
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 346nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 29000pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Rds On (Max) @ Id, Vgs: 1.1 mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-7-3
- Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
|
Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
Stock6,132 |
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MOSFET (Metal Oxide) | 40V | 180A (Tc) | 4.5V, 10V | 2V @ 200µA | 346nC @ 10V | 29000pF @ 20V | ±20V | - | 250W (Tc) | 1.1 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-3 | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
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Infineon Technologies |
MOSFET N-CH 60V 240A D2PAK-7
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 160nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 11270pF @ 50V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 380W (Tc)
- Rds On (Max) @ Id, Vgs: 1.9 mOhm @ 180A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK (7-Lead)
- Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
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Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
Stock14,532 |
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MOSFET (Metal Oxide) | 60V | 240A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 160nC @ 4.5V | 11270pF @ 50V | ±16V | - | 380W (Tc) | 1.9 mOhm @ 180A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
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Infineon Technologies |
MOSFET N-CH 150V 35A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 144W (Tc)
- Rds On (Max) @ Id, Vgs: 39 mOhm @ 21A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock132,528 |
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MOSFET (Metal Oxide) | 150V | 35A (Tc) | 10V | 5V @ 100µA | 26nC @ 10V | 1750pF @ 50V | ±20V | - | 144W (Tc) | 39 mOhm @ 21A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 75A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 290nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7960pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 75A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock29,400 |
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MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 4V @ 250µA | 290nC @ 10V | 7960pF @ 25V | ±20V | - | 300W (Tc) | 3.3 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 20A DIRECTFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 124A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 11560pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
- Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 74A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DIRECTFET L8
- Package / Case: DirectFET? Isometric L8
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Package: DirectFET? Isometric L8 |
Stock30,240 |
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MOSFET (Metal Oxide) | 100V | 20A (Ta), 124A (Tc) | 10V | 4V @ 250µA | 300nC @ 10V | 11560pF @ 25V | ±20V | - | 3.3W (Ta), 125W (Tc) | 3.5 mOhm @ 74A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET L8 | DirectFET? Isometric L8 |
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Infineon Technologies |
MOSFET N-CH 60V 120A TO263-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 196µA
- Gate Charge (Qg) (Max) @ Vgs: 166nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Rds On (Max) @ Id, Vgs: 1.9 mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock13,206 |
|
MOSFET (Metal Oxide) | 60V | 120A (Tc) | 4.5V, 10V | 2.2V @ 196µA | 166nC @ 4.5V | 28000pF @ 30V | ±20V | - | 250W (Tc) | 1.9 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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