Page 92 - Infineon Technologies Products - Transistors - FETs, MOSFETs - Single

IRF200B211
Infineon Technologies

MOSFET N-CH 200V 12A TO-220AB

Package: TO-220-3

Stock103,464
IPB160N04S4H1ATMA1
Infineon Technologies

MOSFET N-CH 40V 160A TO263-7

Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Stock18,240
IRLR2905ZPBF
Infineon Technologies

MOSFET N-CH 55V 42A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock390,492
IRL520NPBF
Infineon Technologies

MOSFET N-CH 100V 10A TO-220AB

Package: TO-220-3

Stock5,216
IRF1310NSTRLPBF
Infineon Technologies

MOSFET N-CH 100V 42A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock29,124
IRF640NPBF
Infineon Technologies

MOSFET N-CH 200V 18A TO-220AB

Package: TO-220-3

Stock897,036
IRF7478PBF
Infineon Technologies

MOSFET N-CH 60V 7A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock4,400
IRFU024NPBF
Infineon Technologies

MOSFET N-CH 55V 17A I-PAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock337,824
IRF2807ZSTRLPBF
Infineon Technologies

MOSFET N-CH 75V 75A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock15,582
IRFR3410PBF
Infineon Technologies

MOSFET N-CH 100V 31A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock13,884
IRLR3410PBF
Infineon Technologies

MOSFET N-CH 100V 17A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock15,096
IRF530NPBF
Infineon Technologies

MOSFET N-CH 100V 17A TO-220AB

Package: TO-220-3

Stock26,580
IRFU9024NPBF
Infineon Technologies

MOSFET P-CH 55V 11A I-PAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock216,768
SPP08P06PHXKSA1
Infineon Technologies

MOSFET P-CH 60V 8.8A TO-220

Package: TO-220-3

Stock14,994
IRF3205ZSTRLPBF
Infineon Technologies

MOSFET N-CH 55V 75A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock455,748
IRF3205STRLPBF
Infineon Technologies

MOSFET N-CH 55V 110A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock48,000
IRF7416PBF
Infineon Technologies

MOSFET P-CH 30V 10A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock4,400
IRF630NPBF
Infineon Technologies

MOSFET N-CH 200V 9.3A TO-220AB

Package: TO-220-3

Stock4,048
IRLB8748PBF
Infineon Technologies

MOSFET N-CH 30V 78A TO220AB

Package: TO-220-3

Stock67,632
IRF1010EZSTRLP
Infineon Technologies

MOSFET N-CH 60V 75A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock33,906

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF200B211	Infineon Technologies	MOSFET N-CH 200V 12A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.9V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 170 mOhm @ 7.2A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock103,464	MOSFET (Metal Oxide)	200V	12A (Tc)	10V	4.9V @ 50µA	23nC @ 10V	790pF @ 50V	±20V	-	80W (Tc)	170 mOhm @ 7.2A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IPB160N04S4H1ATMA1	Infineon Technologies	MOSFET N-CH 40V 160A TO263-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 110µA Gate Charge (Qg) (Max) @ Vgs: 137nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10920pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 167W (Tc) Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7-3 Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Stock18,240	MOSFET (Metal Oxide)	40V	160A (Tc)	10V	4V @ 110µA	137nC @ 10V	10920pF @ 25V	±20V	-	167W (Tc)	1.6 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-7-3	TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
IRLR2905ZPBF	Infineon Technologies	MOSFET N-CH 55V 42A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 36A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock390,492	MOSFET (Metal Oxide)	55V	42A (Tc)	4.5V, 10V	3V @ 250µA	35nC @ 5V	1570pF @ 25V	±16V	-	110W (Tc)	13.5 mOhm @ 36A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRL520NPBF	Infineon Technologies	MOSFET N-CH 100V 10A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 48W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock5,216	MOSFET (Metal Oxide)	100V	10A (Tc)	4V, 10V	2V @ 250µA	20nC @ 5V	440pF @ 25V	±16V	-	48W (Tc)	180 mOhm @ 6A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRF1310NSTRLPBF	Infineon Technologies	MOSFET N-CH 100V 42A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 160W (Tc) Rds On (Max) @ Id, Vgs: 36 mOhm @ 22A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock29,124	MOSFET (Metal Oxide)	100V	42A (Tc)	10V	4V @ 250µA	110nC @ 10V	1900pF @ 25V	±20V	-	3.8W (Ta), 160W (Tc)	36 mOhm @ 22A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF640NPBF	Infineon Technologies	MOSFET N-CH 200V 18A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 150 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock897,036	MOSFET (Metal Oxide)	200V	18A (Tc)	10V	4V @ 250µA	67nC @ 10V	1160pF @ 25V	±20V	-	150W (Tc)	150 mOhm @ 11A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRF7478PBF	Infineon Technologies	MOSFET N-CH 60V 7A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1740pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 26 mOhm @ 4.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock4,400	MOSFET (Metal Oxide)	60V	7A (Ta)	4.5V, 10V	3V @ 250µA	31nC @ 4.5V	1740pF @ 25V	±20V	-	2.5W (Ta)	26 mOhm @ 4.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRFU024NPBF	Infineon Technologies	MOSFET N-CH 55V 17A I-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 75 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock337,824	MOSFET (Metal Oxide)	55V	17A (Tc)	10V	4V @ 250µA	20nC @ 10V	370pF @ 25V	±20V	-	45W (Tc)	75 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Through Hole	IPAK (TO-251)	TO-251-3 Short Leads, IPak, TO-251AA
IRF2807ZSTRLPBF	Infineon Technologies	MOSFET N-CH 75V 75A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3270pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 170W (Tc) Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 53A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock15,582	MOSFET (Metal Oxide)	75V	75A (Tc)	10V	4V @ 250µA	110nC @ 10V	3270pF @ 25V	±20V	-	170W (Tc)	9.4 mOhm @ 53A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFR3410PBF	Infineon Technologies	MOSFET N-CH 100V 31A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1690pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 110W (Tc) Rds On (Max) @ Id, Vgs: 39 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock13,884	MOSFET (Metal Oxide)	100V	31A (Tc)	10V	4V @ 250µA	56nC @ 10V	1690pF @ 25V	±20V	-	3W (Ta), 110W (Tc)	39 mOhm @ 18A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRLR3410PBF	Infineon Technologies	MOSFET N-CH 100V 17A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 79W (Tc) Rds On (Max) @ Id, Vgs: 105 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock15,096	MOSFET (Metal Oxide)	100V	17A (Tc)	4V, 10V	2V @ 250µA	34nC @ 5V	800pF @ 25V	±16V	-	79W (Tc)	105 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRF530NPBF	Infineon Technologies	MOSFET N-CH 100V 17A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 90 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock26,580	MOSFET (Metal Oxide)	100V	17A (Tc)	10V	4V @ 250µA	37nC @ 10V	920pF @ 25V	±20V	-	70W (Tc)	90 mOhm @ 9A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRFU9024NPBF	Infineon Technologies	MOSFET P-CH 55V 11A I-PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 38W (Tc) Rds On (Max) @ Id, Vgs: 175 mOhm @ 6.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock216,768	MOSFET (Metal Oxide)	55V	11A (Tc)	10V	4V @ 250µA	19nC @ 10V	350pF @ 25V	±20V	-	38W (Tc)	175 mOhm @ 6.6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	IPAK (TO-251)	TO-251-3 Short Leads, IPak, TO-251AA
SPP08P06PHXKSA1	Infineon Technologies	MOSFET P-CH 60V 8.8A TO-220 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 42W (Tc) Rds On (Max) @ Id, Vgs: 300 mOhm @ 6.2A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock14,994	MOSFET (Metal Oxide)	60V	8.8A (Tc)	10V	4V @ 250µA	15nC @ 10V	420pF @ 25V	±20V	-	42W (Tc)	300 mOhm @ 6.2A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO-220-3	TO-220-3
IRF3205ZSTRLPBF	Infineon Technologies	MOSFET N-CH 55V 75A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3450pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 170W (Tc) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 66A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock455,748	MOSFET (Metal Oxide)	55V	75A (Tc)	10V	4V @ 250µA	110nC @ 10V	3450pF @ 25V	±20V	-	170W (Tc)	6.5 mOhm @ 66A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF3205STRLPBF	Infineon Technologies	MOSFET N-CH 55V 110A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 146nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3247pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 62A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock48,000	MOSFET (Metal Oxide)	55V	110A (Tc)	10V	4V @ 250µA	146nC @ 10V	3247pF @ 25V	±20V	-	200W (Tc)	8 mOhm @ 62A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF7416PBF	Infineon Technologies	MOSFET P-CH 30V 10A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 20 mOhm @ 5.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock4,400	MOSFET (Metal Oxide)	30V	10A (Ta)	4.5V, 10V	1V @ 250µA	92nC @ 10V	1700pF @ 25V	±20V	-	2.5W (Ta)	20 mOhm @ 5.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRF630NPBF	Infineon Technologies	MOSFET N-CH 200V 9.3A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 575pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 82W (Tc) Rds On (Max) @ Id, Vgs: 300 mOhm @ 5.4A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock4,048	MOSFET (Metal Oxide)	200V	9.3A (Tc)	10V	4V @ 250µA	35nC @ 10V	575pF @ 25V	±20V	-	82W (Tc)	300 mOhm @ 5.4A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRLB8748PBF	Infineon Technologies	MOSFET N-CH 30V 78A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 78A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2139pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock67,632	MOSFET (Metal Oxide)	30V	78A (Tc)	4.5V, 10V	2.35V @ 50µA	23nC @ 4.5V	2139pF @ 15V	±20V	-	75W (Tc)	4.8 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRF1010EZSTRLP	Infineon Technologies	MOSFET N-CH 60V 75A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2810pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 51A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock33,906	MOSFET (Metal Oxide)	60V	75A (Tc)	10V	4V @ 100µA	86nC @ 10V	2810pF @ 25V	±20V	-	140W (Tc)	8.5 mOhm @ 51A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPP45P03P4L11AKSA1	Infineon Technologies	MOSFET P-CH 30V 45A TO220-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 85µA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3770pF @ 25V Vgs (Max): +5V, -16V FET Feature: - Power Dissipation (Max): 58W (Tc) Rds On (Max) @ Id, Vgs: 11.1 mOhm @ 45A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	Package: TO-220-3	Stock20,064	MOSFET (Metal Oxide)	30V	45A (Tc)	4.5V, 10V	2V @ 85µA	55nC @ 10V	3770pF @ 25V	+5V, -16V	-	58W (Tc)	11.1 mOhm @ 45A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
IRL2703PBF	Infineon Technologies	MOSFET N-CH 30V 24A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 40 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock76,968	MOSFET (Metal Oxide)	30V	24A (Tc)	4.5V, 10V	1V @ 250µA	15nC @ 4.5V	450pF @ 25V	±16V	-	45W (Tc)	40 mOhm @ 14A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRFU5505PBF	Infineon Technologies	MOSFET P-CH 55V 18A I-PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 57W (Tc) Rds On (Max) @ Id, Vgs: 110 mOhm @ 9.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock24,300	MOSFET (Metal Oxide)	55V	18A (Tc)	10V	4V @ 250µA	32nC @ 10V	650pF @ 25V	±20V	-	57W (Tc)	110 mOhm @ 9.6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	IPAK (TO-251)	TO-251-3 Short Leads, IPak, TO-251AA
IRFR9024NPBF	Infineon Technologies	MOSFET P-CH 55V 11A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 38W (Tc) Rds On (Max) @ Id, Vgs: 175 mOhm @ 6.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock8,424	MOSFET (Metal Oxide)	55V	11A (Tc)	10V	4V @ 250µA	19nC @ 10V	350pF @ 25V	±20V	-	38W (Tc)	175 mOhm @ 6.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRLL2705PBF	Infineon Technologies	MOSFET N-CH 55V 3.8A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 40 mOhm @ 3.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock87,996	MOSFET (Metal Oxide)	55V	3.8A (Ta)	4V, 10V	2V @ 250µA	48nC @ 10V	870pF @ 25V	±16V	-	1W (Ta)	40 mOhm @ 3.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
IRFU220NPBF	Infineon Technologies	MOSFET N-CH 200V 5A I-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 43W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 2.9A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock143,988	MOSFET (Metal Oxide)	200V	5A (Tc)	10V	4V @ 250µA	23nC @ 10V	300pF @ 25V	±20V	-	43W (Tc)	600 mOhm @ 2.9A, 10V	-55°C ~ 175°C (TJ)	Through Hole	IPAK (TO-251)	TO-251-3 Short Leads, IPak, TO-251AA
BSC080P03LS G	Infineon Technologies	MOSFET P-CH 30V 30A TDSON-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 122.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6140pF @ 15V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock69,828	MOSFET (Metal Oxide)	30V	16A (Ta), 30A (Tc)	10V	2.2V @ 250µA	122.4nC @ 10V	6140pF @ 15V	±25V	-	2.5W (Ta), 89W (Tc)	8 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8	8-PowerTDFN
IRFH7004TRPBF	Infineon Technologies	MOSFET N CH 40V 100A PQFN 5X6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.9V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 194nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6419pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 156W (Tc) Rds On (Max) @ Id, Vgs: 1.4 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6) Package / Case: 8-VQFN Exposed Pad	Package: 8-VQFN Exposed Pad	Stock57,132	MOSFET (Metal Oxide)	40V	100A (Tc)	6V, 10V	3.9V @ 150µA	194nC @ 10V	6419pF @ 25V	±20V	-	156W (Tc)	1.4 mOhm @ 100A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PQFN (5x6)	8-VQFN Exposed Pad