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Infineon Technologies |
IGBT 3 CHIP 600V
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 30 A
- Current - Collector Pulsed (Icm): 90 A
- Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 30A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: - |
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600 V | 30 A | 90 A | 2.05V @ 15V, 30A | - | - | Standard | - | - | - | - | -40°C ~ 175°C (TJ) | Surface Mount | Die | Die |
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Infineon Technologies |
IGBT TRENCH 1200V 154A TO247-3
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 154 A
- Current - Collector Pulsed (Icm): 225 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
- Power - Max: 630 W
- Switching Energy: 5.13mJ (on), 3.48mJ (off)
- Input Type: Standard
- Gate Charge: 450 nC
- Td (on/off) @ 25°C: 38ns/190ns
- Test Condition: 600V, 75A, 2.1Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3-55
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Package: - |
Stock606 |
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1200 V | 154 A | 225 A | 2V @ 15V, 75A | 630 W | 5.13mJ (on), 3.48mJ (off) | Standard | 450 nC | 38ns/190ns | 600V, 75A, 2.1Ohm, 15V | - | -40°C ~ 175°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3-55 |
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Infineon Technologies |
IGBT TRENCH FS 600V 77A TO247-3
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 77 A
- Current - Collector Pulsed (Icm): 300 A
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
- Power - Max: 178 W
- Switching Energy: 2.65mJ (on), 1.3mJ (off)
- Input Type: Standard
- Gate Charge: 440 nC
- Td (on/off) @ 25°C: 32ns/210ns
- Test Condition: 400V, 75A, 5Ohm, 15V
- Reverse Recovery Time (trr): 107 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3-AI
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Package: - |
Stock732 |
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600 V | 77 A | 300 A | 2.3V @ 15V, 75A | 178 W | 2.65mJ (on), 1.3mJ (off) | Standard | 440 nC | 32ns/210ns | 400V, 75A, 5Ohm, 15V | 107 ns | -40°C ~ 175°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3-AI |
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Infineon Technologies |
IGBT TRENCH 100V
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: -
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
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Infineon Technologies |
IGBT TRENCH FS 1200V 109A TO247
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 109 A
- Current - Collector Pulsed (Icm): 300 A
- Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
- Power - Max: 549 W
- Switching Energy: 2.01mJ (on), 1.76mJ (off)
- Input Type: Standard
- Gate Charge: 550 nC
- Td (on/off) @ 25°C: 40ns/359ns
- Test Condition: -
- Reverse Recovery Time (trr): 95 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-4
- Supplier Device Package: PG-TO247-4-U02
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Package: - |
Stock510 |
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1200 V | 109 A | 300 A | 2.15V @ 15V, 75A | 549 W | 2.01mJ (on), 1.76mJ (off) | Standard | 550 nC | 40ns/359ns | - | 95 ns | -40°C ~ 175°C (TJ) | Through Hole | TO-247-4 | PG-TO247-4-U02 |
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Infineon Technologies |
IGBT 750V 150A TO247-3
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 750 V
- Current - Collector (Ic) (Max): 150 A
- Current - Collector Pulsed (Icm): 360 A
- Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 120A
- Power - Max: 577 W
- Switching Energy: 6.4mJ (on), 3.4mJ (off)
- Input Type: Standard
- Gate Charge: 481 nC
- Td (on/off) @ 25°C: 57ns/285ns
- Test Condition: 450V, 120A, 4.8Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3-51
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Package: - |
Stock645 |
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750 V | 150 A | 360 A | 1.65V @ 15V, 120A | 577 W | 6.4mJ (on), 3.4mJ (off) | Standard | 481 nC | 57ns/285ns | 450V, 120A, 4.8Ohm, 15V | - | -40°C ~ 175°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3-51 |
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Infineon Technologies |
IGBT TRENCH FS 600V 40A TO263-3
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 40 A
- Current - Collector Pulsed (Icm): 80 A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
- Power - Max: 170 W
- Switching Energy: 690µJ
- Input Type: Standard
- Gate Charge: 120 nC
- Td (on/off) @ 25°C: 16ns/194ns
- Test Condition: 400V, 20A, 14.6Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: PG-TO263-3
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Package: - |
Stock2,868 |
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600 V | 40 A | 80 A | 2.4V @ 15V, 20A | 170 W | 690µJ | Standard | 120 nC | 16ns/194ns | 400V, 20A, 14.6Ohm, 15V | - | -40°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | PG-TO263-3 |
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Infineon Technologies |
IGBT 3 CHIP 600V WAFER
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 30 A
- Current - Collector Pulsed (Icm): 90 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 44ns/324ns
- Test Condition: 400V, 30A, 11Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: - |
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600 V | 30 A | 90 A | 2.5V @ 15V, 30A | - | - | Standard | - | 44ns/324ns | 400V, 30A, 11Ohm, 15V | - | -55°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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Infineon Technologies |
FZ1200R16 - INSULATED GATE BIPOL
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: -
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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Infineon Technologies |
IGBT
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: -
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock2,250 |
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Infineon Technologies |
IGBT 3 CHIP 600V 200A WAFER
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 200 A
- Current - Collector Pulsed (Icm): 600 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 200A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: - |
Request a Quote |
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600 V | 200 A | 600 A | 1.9V @ 15V, 200A | - | - | Standard | - | - | - | - | -40°C ~ 175°C (TJ) | Surface Mount | Die | Die |
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Infineon Technologies |
IGBT TRENCH FS 600V 200A DIE
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 200 A
- Current - Collector Pulsed (Icm): 600 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 200A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: - |
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600 V | 200 A | 600 A | 1.9V @ 15V, 200A | - | - | Standard | - | - | - | - | -40°C ~ 175°C (TJ) | Surface Mount | Die | Die |
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Infineon Technologies |
IGBT 1200V 10A SAWN ON FOIL
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): 30 A
- Vce(on) (Max) @ Vge, Ic: 2.07V @ 15V, 8A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: - |
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1200 V | - | 30 A | 2.07V @ 15V, 8A | - | - | Standard | - | - | - | - | -40°C ~ 175°C (TJ) | Surface Mount | Die | Die |
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Infineon Technologies |
DISCRETE SWITCHES
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 50 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: PG-TO263-3-2
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Package: - |
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650 V | 50 A | - | - | - | - | Standard | - | - | - | - | - | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | PG-TO263-3-2 |
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Infineon Technologies |
IGBT IGNITION LL
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 430 V
- Current - Collector (Ic) (Max): 14 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2.65V @ 4.5V, 10A
- Power - Max: -
- Switching Energy: -
- Input Type: Logic
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: - |
Request a Quote |
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430 V | 14 A | - | 2.65V @ 4.5V, 10A | - | - | Logic | - | - | - | - | -40°C ~ 175°C (TJ) | Surface Mount | Die | Die |
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Infineon Technologies |
IGBT TRENCH FS 600V 150A DIE
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 150 A
- Current - Collector Pulsed (Icm): 450 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 150A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: - |
Request a Quote |
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600 V | 150 A | 450 A | 1.9V @ 15V, 150A | - | - | Standard | - | - | - | - | -40°C ~ 175°C (TJ) | Surface Mount | Die | Die |
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Infineon Technologies |
IGBT 650V 28A TO220-3
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 38 A
- Current - Collector Pulsed (Icm): 90 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 28A
- Power - Max: 130 W
- Switching Energy: 530µJ (on), 400µJ (off)
- Input Type: Standard
- Gate Charge: 50 nC
- Td (on/off) @ 25°C: 27ns/184ns
- Test Condition: 400V, 28A, 34Ohm, 15V
- Reverse Recovery Time (trr): 73 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: PG-TO220-3
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Package: - |
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650 V | 38 A | 90 A | 1.9V @ 15V, 28A | 130 W | 530µJ (on), 400µJ (off) | Standard | 50 nC | 27ns/184ns | 400V, 28A, 34Ohm, 15V | 73 ns | -40°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3 |
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Infineon Technologies |
IGBT 3 CHIP 600V WAFER
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 10 A
- Current - Collector Pulsed (Icm): 30 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 20ns/110ns
- Test Condition: 300V, 10A, 27Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: - |
Request a Quote |
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600 V | 10 A | 30 A | 2.5V @ 15V, 10A | - | - | Standard | - | 20ns/110ns | 300V, 10A, 27Ohm, 15V | - | -55°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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Infineon Technologies |
IGBT CHIP
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 10 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 1.3V @ 15V, 2A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: - |
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600 V | 10 A | - | 1.3V @ 15V, 2A | - | - | Standard | - | - | - | - | - | Surface Mount | Die | Die |
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Infineon Technologies |
IGBT TRENCH
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: -
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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Infineon Technologies |
IGBT TRENCH
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: -
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
IGBT TRENCH FS 1200V 92A TO247-3
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 92 A
- Current - Collector Pulsed (Icm): 300 A
- Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
- Power - Max: 549 W
- Switching Energy: 4.22mJ (on), 1.66mJ (off)
- Input Type: Standard
- Gate Charge: 535 nC
- Td (on/off) @ 25°C: 55ns/461ns
- Test Condition: -
- Reverse Recovery Time (trr): 145 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3-U06
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Package: - |
Stock1,140 |
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1200 V | 92 A | 300 A | 2.15V @ 15V, 75A | 549 W | 4.22mJ (on), 1.66mJ (off) | Standard | 535 nC | 55ns/461ns | - | 145 ns | -40°C ~ 175°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3-U06 |
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Infineon Technologies |
IGBT 3 CHIP 600V WAFER
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 20 A
- Current - Collector Pulsed (Icm): 60 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 21ns/110ns
- Test Condition: 300V, 20A, 13Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: - |
Request a Quote |
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600 V | 20 A | 60 A | 2.5V @ 15V, 20A | - | - | Standard | - | 21ns/110ns | 300V, 20A, 13Ohm, 15V | - | -55°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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Infineon Technologies |
IGBT 3 CHIP 600V WAFER
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 20 A
- Current - Collector Pulsed (Icm): 60 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 21ns/110ns
- Test Condition: 300V, 20A, 13Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: - |
Request a Quote |
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600 V | 20 A | 60 A | 2.5V @ 15V, 20A | - | - | Standard | - | 21ns/110ns | 300V, 20A, 13Ohm, 15V | - | -55°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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Infineon Technologies |
IGBT 3 CHIP 600V WAFER
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 20 A
- Current - Collector Pulsed (Icm): 60 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 21ns/110ns
- Test Condition: 300V, 20A, 13Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: - |
Request a Quote |
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600 V | 20 A | 60 A | 2.5V @ 15V, 20A | - | - | Standard | - | 21ns/110ns | 300V, 20A, 13Ohm, 15V | - | -55°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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Infineon Technologies |
IGBT 3 CHIP 600V WAFER
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 20 A
- Current - Collector Pulsed (Icm): 60 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 21ns/110ns
- Test Condition: 300V, 20A, 13Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: - |
Request a Quote |
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600 V | 20 A | 60 A | 2.5V @ 15V, 20A | - | - | Standard | - | 21ns/110ns | 300V, 20A, 13Ohm, 15V | - | -55°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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Infineon Technologies |
IGBT 3 CHIP 600V WAFER
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 20 A
- Current - Collector Pulsed (Icm): 60 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 21ns/110ns
- Test Condition: 300V, 20A, 13Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: - |
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600 V | 20 A | 60 A | 2.5V @ 15V, 20A | - | - | Standard | - | 21ns/110ns | 300V, 20A, 13Ohm, 15V | - | -55°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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Infineon Technologies |
IGBT TRENCH FS 650V 75A DIE
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 75 A
- Current - Collector Pulsed (Icm): 225 A
- Vce(on) (Max) @ Vge, Ic: 2.22V @ 15V, 75A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: - |
Request a Quote |
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650 V | 75 A | 225 A | 2.22V @ 15V, 75A | - | - | Standard | - | - | - | - | -40°C ~ 175°C (TJ) | Surface Mount | Die | Die |