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Infineon Technologies |
IC MOSFET DRVR HI/LO SIDE 16-DIP
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10 V ~ 20 V
- Logic Voltage - VIL, VIH: 6V, 9.5V
- Current - Peak Output (Source, Sink): 250mA, 500mA
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 80ns, 40ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 14-DIP (0.300", 7.62mm), 12 Leads
- Supplier Device Package: 14-PDIP
|
Package: 14-DIP (0.300", 7.62mm), 12 Leads |
Stock2,576 |
|
Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 6V, 9.5V | 250mA, 500mA | Non-Inverting | 600V | 80ns, 40ns | -40°C ~ 150°C (TJ) | Through Hole | 14-DIP (0.300", 7.62mm), 12 Leads | 14-PDIP |
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Infineon Technologies |
IC MOSFET DRVR HI/LO SIDE 14-DIP
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10 V ~ 20 V
- Logic Voltage - VIL, VIH: 6V, 9.5V
- Current - Peak Output (Source, Sink): 250mA, 500mA
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 80ns, 40ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 14-DIP (0.300", 7.62mm), 13 Leads
- Supplier Device Package: 14-PDIP
|
Package: 14-DIP (0.300", 7.62mm), 13 Leads |
Stock5,184 |
|
Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 6V, 9.5V | 250mA, 500mA | Non-Inverting | 600V | 80ns, 40ns | -40°C ~ 150°C (TJ) | Through Hole | 14-DIP (0.300", 7.62mm), 13 Leads | 14-PDIP |
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Infineon Technologies |
IC DRIVER HIGH/LOW SIDE 14-DIP
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 3.3 V ~ 20 V
- Logic Voltage - VIL, VIH: 6V, 9.5V
- Current - Peak Output (Source, Sink): 2A, 2A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 500V
- Rise / Fall Time (Typ): 25ns, 17ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 14-DIP (0.300", 7.62mm), 12 Leads
- Supplier Device Package: 14-PDIP
|
Package: 14-DIP (0.300", 7.62mm), 12 Leads |
Stock16,236 |
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Independent | 2 | IGBT, N-Channel MOSFET | 3.3 V ~ 20 V | 6V, 9.5V | 2A, 2A | Non-Inverting | 500V | 25ns, 17ns | -40°C ~ 150°C (TJ) | Through Hole | 14-DIP (0.300", 7.62mm), 12 Leads | 14-PDIP |
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Infineon Technologies |
IC DRIVER HIGH/LOW SIDE 14-SOIC
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 3V
- Current - Peak Output (Source, Sink): 210mA, 360mA
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 100ns, 50ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 14-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 14-SOIC
|
Package: 14-SOIC (0.154", 3.90mm Width) |
Stock2,784 |
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Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 3V | 210mA, 360mA | Non-Inverting | 600V | 100ns, 50ns | -40°C ~ 150°C (TJ) | Surface Mount | 14-SOIC (0.154", 3.90mm Width) | 14-SOIC |
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Infineon Technologies |
IC DRIVER HIGH/LOW SIDE 14-DIP
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 3V
- Current - Peak Output (Source, Sink): 210mA, 360mA
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 100ns, 50ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 14-DIP (0.300", 7.62mm)
- Supplier Device Package: 14-DIP
|
Package: 14-DIP (0.300", 7.62mm) |
Stock4,336 |
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Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 3V | 210mA, 360mA | Non-Inverting | 600V | 100ns, 50ns | -40°C ~ 150°C (TJ) | Through Hole | 14-DIP (0.300", 7.62mm) | 14-DIP |
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Infineon Technologies |
IC DRIVER 3-PHASE BRIDGE 28-SOIC
- Driven Configuration: Half-Bridge
- Channel Type: 3-Phase
- Number of Drivers: 6
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 2V
- Current - Peak Output (Source, Sink): 250mA, 500mA
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): 1200V
- Rise / Fall Time (Typ): 90ns, 40ns
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 28-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 28-SOIC
|
Package: 28-SOIC (0.295", 7.50mm Width) |
Stock80,448 |
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3-Phase | 6 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2V | 250mA, 500mA | Inverting | 1200V | 90ns, 40ns | 125°C (TJ) | Surface Mount | 28-SOIC (0.295", 7.50mm Width) | 28-SOIC |
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Infineon Technologies |
IC DRIVER 3-PHASE BRIDGE 44-PLCC
- Driven Configuration: Half-Bridge
- Channel Type: 3-Phase
- Number of Drivers: 6
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 2V
- Current - Peak Output (Source, Sink): 250mA, 500mA
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): 1200V
- Rise / Fall Time (Typ): 90ns, 40ns
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 44-LCC (J-Lead), 32 Leads
- Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
|
Package: 44-LCC (J-Lead), 32 Leads |
Stock297,192 |
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3-Phase | 6 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2V | 250mA, 500mA | Inverting | 1200V | 90ns, 40ns | 125°C (TJ) | Surface Mount | 44-LCC (J-Lead), 32 Leads | 44-PLCC, 32 Leads (16.58x16.58) |
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Infineon Technologies |
IC DRIVER 3-PHASE BRIDGE 28-DIP
- Driven Configuration: Half-Bridge
- Channel Type: 3-Phase
- Number of Drivers: 6
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 2V
- Current - Peak Output (Source, Sink): 250mA, 500mA
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): 1200V
- Rise / Fall Time (Typ): 90ns, 40ns
- Operating Temperature: 125°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 28-DIP (0.600", 15.24mm)
- Supplier Device Package: 28-DIP
|
Package: 28-DIP (0.600", 15.24mm) |
Stock15,840 |
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3-Phase | 6 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2V | 250mA, 500mA | Inverting | 1200V | 90ns, 40ns | 125°C (TJ) | Through Hole | 28-DIP (0.600", 15.24mm) | 28-DIP |
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Infineon Technologies |
IC DRIVER 3-PHASE BRIDGE 28-SOIC
- Driven Configuration: Half-Bridge
- Channel Type: 3-Phase
- Number of Drivers: 6
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 2V
- Current - Peak Output (Source, Sink): 250mA, 500mA
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): 1200V
- Rise / Fall Time (Typ): 90ns, 40ns
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 28-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 28-SOIC
|
Package: 28-SOIC (0.295", 7.50mm Width) |
Stock86,232 |
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3-Phase | 6 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2V | 250mA, 500mA | Inverting | 1200V | 90ns, 40ns | 125°C (TJ) | Surface Mount | 28-SOIC (0.295", 7.50mm Width) | 28-SOIC |
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Infineon Technologies |
IC DRIVER 3-PHASE BRIDGE 28-DIP
- Driven Configuration: Half-Bridge
- Channel Type: 3-Phase
- Number of Drivers: 6
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 2V
- Current - Peak Output (Source, Sink): 250mA, 500mA
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): 1200V
- Rise / Fall Time (Typ): 90ns, 40ns
- Operating Temperature: 125°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 28-DIP (0.600", 15.24mm)
- Supplier Device Package: 28-DIP
|
Package: 28-DIP (0.600", 15.24mm) |
Stock5,472 |
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3-Phase | 6 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2V | 250mA, 500mA | Inverting | 1200V | 90ns, 40ns | 125°C (TJ) | Through Hole | 28-DIP (0.600", 15.24mm) | 28-DIP |
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Infineon Technologies |
IC DRIVER HIGH/LOW SIDE 16-SOIC
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 12 V ~ 20 V
- Logic Voltage - VIL, VIH: 6V, 9.5V
- Current - Peak Output (Source, Sink): 2A, 2.5A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 1200V
- Rise / Fall Time (Typ): 25ns, 17ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 16-SOIC
|
Package: 16-SOIC (0.295", 7.50mm Width) |
Stock26,400 |
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Independent | 2 | IGBT, N-Channel MOSFET | 12 V ~ 20 V | 6V, 9.5V | 2A, 2.5A | Non-Inverting | 1200V | 25ns, 17ns | -55°C ~ 150°C (TJ) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
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Infineon Technologies |
IC DRIVER HIGH/LOW SIDE 14-DIP
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 12 V ~ 20 V
- Logic Voltage - VIL, VIH: 6V, 9.5V
- Current - Peak Output (Source, Sink): 2A, 2.5A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 1200V
- Rise / Fall Time (Typ): 25ns, 17ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 14-DIP (0.300", 7.62mm)
- Supplier Device Package: 14-DIP
|
Package: 14-DIP (0.300", 7.62mm) |
Stock5,488 |
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Independent | 2 | IGBT, N-Channel MOSFET | 12 V ~ 20 V | 6V, 9.5V | 2A, 2.5A | Non-Inverting | 1200V | 25ns, 17ns | -55°C ~ 150°C (TJ) | Through Hole | 14-DIP (0.300", 7.62mm) | 14-DIP |
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Infineon Technologies |
IC DRVR HALF BRDG SELF-OSC 8-DIP
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10 V ~ 20 V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 250mA, 500mA
- Input Type: RC Input Circuit
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 80ns, 45ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-DIP
|
Package: 8-DIP (0.300", 7.62mm) |
Stock4,288 |
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Synchronous | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | - | 250mA, 500mA | RC Input Circuit | 600V | 80ns, 45ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP |
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Infineon Technologies |
IC DRVR HALF BRDG SELF-OSC 8SOIC
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 10 V ~ 15.6 V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): -
- Input Type: RC Input Circuit
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 80ns, 45ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock416,052 |
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Synchronous | 2 | N-Channel MOSFET | 10 V ~ 15.6 V | - | - | RC Input Circuit | 600V | 80ns, 45ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC DRVR HALF BRDG SELF-OSC 8SOIC
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 10 V ~ 15.6 V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): -
- Input Type: RC Input Circuit
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 80ns, 45ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock412,608 |
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Synchronous | 2 | N-Channel MOSFET | 10 V ~ 15.6 V | - | - | RC Input Circuit | 600V | 80ns, 45ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC DRVR HALF BRDG SELF-OSC 8SOIC
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 10 V ~ 15.6 V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): -
- Input Type: RC Input Circuit
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 80ns, 45ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock41,316 |
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Synchronous | 2 | N-Channel MOSFET | 10 V ~ 15.6 V | - | - | RC Input Circuit | 600V | 80ns, 45ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC DRVR HALF BRDG SELF-OSC 8-DIP
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 10 V ~ 15.6 V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): -
- Input Type: RC Input Circuit
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 80ns, 45ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-DIP
|
Package: 8-DIP (0.300", 7.62mm) |
Stock71,364 |
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Synchronous | 2 | N-Channel MOSFET | 10 V ~ 15.6 V | - | - | RC Input Circuit | 600V | 80ns, 45ns | -40°C ~ 125°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP |
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Infineon Technologies |
IC DRVR HALF BRDG SELF-OSC 8SOIC
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10 V ~ 20 V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 125mA, 250mA
- Input Type: RC Input Circuit
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 80ns, 40ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock18,576 |
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Synchronous | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | - | 125mA, 250mA | RC Input Circuit | 600V | 80ns, 40ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC DRVR HALF BRDG SELF-OSC 8SOIC
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10 V ~ 20 V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 125mA, 250mA
- Input Type: RC Input Circuit
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 80ns, 40ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock52,440 |
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Synchronous | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | - | 125mA, 250mA | RC Input Circuit | 600V | 80ns, 40ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC DRIVER BRIDGE 3-PHASE 64-MQFP
- Driven Configuration: Half-Bridge
- Channel Type: 3-Phase
- Number of Drivers: 3
- Gate Type: IGBT
- Voltage - Supply: 12.5 V ~ 20 V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): -
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 115ns, 25ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 64-BQFP
- Supplier Device Package: 64-MQFP (20x14)
|
Package: 64-BQFP |
Stock7,552 |
|
3-Phase | 3 | IGBT | 12.5 V ~ 20 V | - | - | Inverting | 600V | 115ns, 25ns | -40°C ~ 150°C (TJ) | Surface Mount | 64-BQFP | 64-MQFP (20x14) |
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Infineon Technologies |
IC DRIVER BRIDGE 3-PHASE 64-PLCC
- Driven Configuration: Half-Bridge
- Channel Type: 3-Phase
- Number of Drivers: 3
- Gate Type: IGBT
- Voltage - Supply: 12.5 V ~ 20 V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): -
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 115ns, 25ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 68-PLCC
- Supplier Device Package: 68-PLCC
|
Package: 68-PLCC |
Stock6,192 |
|
3-Phase | 3 | IGBT | 12.5 V ~ 20 V | - | - | Inverting | 600V | 115ns, 25ns | -40°C ~ 150°C (TJ) | Surface Mount | 68-PLCC | 68-PLCC |
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Infineon Technologies |
IC DRIVER BRIDGE 3-PHASE 28-SOIC
- Driven Configuration: Half-Bridge
- Channel Type: 3-Phase
- Number of Drivers: 6
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 3V
- Current - Peak Output (Source, Sink): 200mA, 350mA
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 125ns, 50ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 28-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 28-SOIC
|
Package: 28-SOIC (0.295", 7.50mm Width) |
Stock329,724 |
|
3-Phase | 6 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 3V | 200mA, 350mA | Inverting | 600V | 125ns, 50ns | -40°C ~ 150°C (TJ) | Surface Mount | 28-SOIC (0.295", 7.50mm Width) | 28-SOIC |
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Infineon Technologies |
IC DRIVER BRIDGE 3-PHASE 44-PLCC
- Driven Configuration: Half-Bridge
- Channel Type: 3-Phase
- Number of Drivers: 6
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 3V
- Current - Peak Output (Source, Sink): 200mA, 350mA
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 125ns, 50ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 44-LCC (J-Lead), 32 Leads
- Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
|
Package: 44-LCC (J-Lead), 32 Leads |
Stock927,696 |
|
3-Phase | 6 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 3V | 200mA, 350mA | Inverting | 600V | 125ns, 50ns | -40°C ~ 150°C (TJ) | Surface Mount | 44-LCC (J-Lead), 32 Leads | 44-PLCC, 32 Leads (16.58x16.58) |
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Infineon Technologies |
IC DRIVER BRIDGE 3-PHASE 28-SOIC
- Driven Configuration: Half-Bridge
- Channel Type: 3-Phase
- Number of Drivers: 6
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 11.5 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 3V
- Current - Peak Output (Source, Sink): 200mA, 350mA
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 125ns, 50ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 28-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 28-SOIC
|
Package: 28-SOIC (0.295", 7.50mm Width) |
Stock156,012 |
|
3-Phase | 6 | IGBT, N-Channel MOSFET | 11.5 V ~ 20 V | 0.8V, 3V | 200mA, 350mA | Inverting, Non-Inverting | 600V | 125ns, 50ns | -40°C ~ 150°C (TJ) | Surface Mount | 28-SOIC (0.295", 7.50mm Width) | 28-SOIC |
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|
Infineon Technologies |
IC DRIVER BRIDGE 3-PHASE 44-PLCC
- Driven Configuration: Half-Bridge
- Channel Type: 3-Phase
- Number of Drivers: 6
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 11.5 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 3V
- Current - Peak Output (Source, Sink): 200mA, 350mA
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 125ns, 50ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 44-LCC (J-Lead), 32 Leads
- Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
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Package: 44-LCC (J-Lead), 32 Leads |
Stock97,896 |
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3-Phase | 6 | IGBT, N-Channel MOSFET | 11.5 V ~ 20 V | 0.8V, 3V | 200mA, 350mA | Inverting, Non-Inverting | 600V | 125ns, 50ns | -40°C ~ 150°C (TJ) | Surface Mount | 44-LCC (J-Lead), 32 Leads | 44-PLCC, 32 Leads (16.58x16.58) |
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Infineon Technologies |
IC DRIVER BRIDGE 3-PHASE 28-DIP
- Driven Configuration: Half-Bridge
- Channel Type: 3-Phase
- Number of Drivers: 6
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 11.5 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 3V
- Current - Peak Output (Source, Sink): 200mA, 350mA
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 125ns, 50ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 28-DIP (0.600", 15.24mm)
- Supplier Device Package: 28-DIP
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Package: 28-DIP (0.600", 15.24mm) |
Stock32,340 |
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3-Phase | 6 | IGBT, N-Channel MOSFET | 11.5 V ~ 20 V | 0.8V, 3V | 200mA, 350mA | Inverting, Non-Inverting | 600V | 125ns, 50ns | -40°C ~ 150°C (TJ) | Through Hole | 28-DIP (0.600", 15.24mm) | 28-DIP |
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Infineon Technologies |
IC DRIVER BRIDGE 3-PHASE 28-SOIC
- Driven Configuration: Half-Bridge
- Channel Type: 3-Phase
- Number of Drivers: 6
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 2.2V
- Current - Peak Output (Source, Sink): 250mA, 500mA
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 90ns, 40ns
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 28-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 28-SOIC
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Package: 28-SOIC (0.295", 7.50mm Width) |
Stock119,676 |
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3-Phase | 6 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.2V | 250mA, 500mA | Inverting | 600V | 90ns, 40ns | 125°C (TJ) | Surface Mount | 28-SOIC (0.295", 7.50mm Width) | 28-SOIC |
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Infineon Technologies |
IC DRIVER BRIDGE 3-PHASE 44-PLCC
- Driven Configuration: Half-Bridge
- Channel Type: 3-Phase
- Number of Drivers: 6
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 2.2V
- Current - Peak Output (Source, Sink): 250mA, 500mA
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 90ns, 40ns
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 44-LCC (J-Lead), 32 Leads
- Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
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Package: 44-LCC (J-Lead), 32 Leads |
Stock12,024 |
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3-Phase | 6 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.2V | 250mA, 500mA | Inverting | 600V | 90ns, 40ns | 125°C (TJ) | Surface Mount | 44-LCC (J-Lead), 32 Leads | 44-PLCC, 32 Leads (16.58x16.58) |