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Infineon Technologies |
IGBT 600V 36A 206W TO220AB
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 36A
- Current - Collector Pulsed (Icm): 72A
- Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 18A
- Power - Max: 206W
- Switching Energy: 95µJ (on), 350µJ (off)
- Input Type: Standard
- Gate Charge: 35nC
- Td (on/off) @ 25°C: 40ns/105ns
- Test Condition: 400V, 18A, 22 Ohm, 15V
- Reverse Recovery Time (trr): 100ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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Package: TO-220-3 |
Stock27,504 |
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Infineon Technologies |
IGBT 600V 78A 370W D2PAK
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 78A
- Current - Collector Pulsed (Icm): 120A
- Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 30A
- Power - Max: 370W
- Switching Energy: 350µJ (on), 825µJ (off)
- Input Type: Standard
- Gate Charge: 102nC
- Td (on/off) @ 25°C: 46ns/185ns
- Test Condition: 400V, 30A, 10 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock14,472 |
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Infineon Technologies |
MOSFET N-CH 30V 30A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 41.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 100W (Tc)
- Rds On (Max) @ Id, Vgs: 10 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock4,496 |
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Infineon Technologies |
MOSFET N-CH 30V 32A DIRECTFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 150A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.25V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 56nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 4860pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.9W (Ta), 89W (Tc)
- Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 27A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DIRECTFET? MX
- Package / Case: DirectFET? Isometric MX
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Package: DirectFET? Isometric MX |
Stock7,320 |
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Infineon Technologies |
MOSFET N-CH BARE DIE
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Stock3,360 |
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Infineon Technologies |
MOSFET N-CH 100V 17A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 34nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 79W (Tc)
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 9A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock260,220 |
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Infineon Technologies |
MOSFET N-CH 600V 4VSON
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 15.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 530µA
- Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 126W (Tc)
- Rds On (Max) @ Id, Vgs: 255 mOhm @ 6.4A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-VSON-4
- Package / Case: 4-PowerTSFN
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Package: 4-PowerTSFN |
Stock21,756 |
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Infineon Technologies |
IC FET RF LDMOS 55W H-36265-2
- Transistor Type: LDMOS
- Frequency: 960MHz
- Gain: 18.5dB
- Voltage - Test: 28V
- Current Rating: 10µA
- Noise Figure: -
- Current - Test: 600mA
- Power - Output: 55W
- Voltage - Rated: 65V
- Package / Case: 2-Flatpack, Fin Leads
- Supplier Device Package: H-36265-2
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Package: 2-Flatpack, Fin Leads |
Stock7,104 |
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Infineon Technologies |
TRANS PNP 30V 0.1A SOT-323
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
- Power - Max: 250mW
- Frequency - Transition: 250MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: PG-SOT323-3
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Package: SC-70, SOT-323 |
Stock7,712 |
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Infineon Technologies |
IC REG LINEAR 5V 400MA P-TO252-3
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 40V
- Voltage - Output (Min/Fixed): 5V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.5V @ 250mA
- Current - Output: 400mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): 220µA ~ 30mA
- PSRR: 60dB (100Hz)
- Control Features: -
- Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: P-TO252-3
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock3,744 |
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Infineon Technologies |
IC SWITCH SMART LOWSIDE TO252-3
- Switch Type: General Purpose
- Number of Outputs: 1
- Ratio - Input:Output: 1:1
- Output Configuration: Low Side
- Output Type: N-Channel
- Interface: On/Off
- Voltage - Load: 31V (Max)
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 2A
- Rds On (Typ): 108 mOhm
- Input Type: Non-Inverting
- Features: Auto Restart
- Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: PG-TO252-3-313
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock4,800 |
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Infineon Technologies |
IC MCU 32BIT 1MB FLASH 144LQFP
- Core Processor: ARM? Cortex?-M4
- Core Size: 32-Bit
- Speed: 120MHz
- Connectivity: CAN, EBI/EMI, Ethernet, I2C, LIN, SPI, UART, USB
- Peripherals: DMA, I2S, LED, POR, PWM, WDT
- Number of I/O: 91
- Program Memory Size: 1MB (1M x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 160K x 8
- Voltage - Supply (Vcc/Vdd): 3.13 V ~ 3.63 V
- Data Converters: A/D 32x12b, D/A 2x12b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: -
- Package / Case: 144-LQFP Exposed Pad
- Supplier Device Package: 144-LQFP (20x20)
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Package: 144-LQFP Exposed Pad |
Stock3,264 |
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Infineon Technologies |
IC SECURITY CTRLR 8/16BIT DS08
- Applications: Security
- Core Processor: -
- Program Memory Type: -
- Controller Series: -
- RAM Size: -
- Interface: -
- Number of I/O: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: PG-DSO-8
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock5,904 |
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Infineon Technologies |
TVS DIODE 14VWM 28VC TSLP2-17
- Type: Zener
- Unidirectional Channels: -
- Bidirectional Channels: 1
- Voltage - Reverse Standoff (Typ): 14V (Max)
- Voltage - Breakdown (Min): 8.5V
- Voltage - Clamping (Max) @ Ipp: 28V
- Current - Peak Pulse (10/1000µs): 1A (8/20µs)
- Power - Peak Pulse: -
- Power Line Protection: No
- Applications: Automotive
- Capacitance @ Frequency: 4pF @ 1MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOD-882
- Supplier Device Package: PG-TSLP-2
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Package: SOD-882 |
Stock5,418 |
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Infineon Technologies |
IC REG BUCK 28VQFN
- Output Type: -
- Function: -
- Output Configuration: -
- Topology: -
- Number of Outputs: -
- Output Phases: -
- Voltage - Supply (Vcc/Vdd): -
- Frequency - Switching: -
- Duty Cycle (Max): -
- Synchronous Rectifier: -
- Clock Sync: -
- Serial Interfaces: -
- Control Features: -
- Operating Temperature: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock5,328 |
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Infineon Technologies |
IC MCU 32BIT 44MQFP
- Core Processor: -
- Core Size: -
- Speed: -
- Connectivity: -
- Peripherals: -
- Number of I/O: -
- Program Memory Size: -
- Program Memory Type: -
- EEPROM Size: -
- RAM Size: -
- Voltage - Supply (Vcc/Vdd): -
- Data Converters: -
- Oscillator Type: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock5,376 |
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Infineon Technologies |
SCR MODULE 1400V 1250A DO200AA
- Structure: Single
- Number of SCRs, Diodes: 1 SCR
- Voltage - Off State: 1.4 kV
- Current - On State (It (AV)) (Max): 681 A
- Current - On State (It (RMS)) (Max): 1250 A
- Voltage - Gate Trigger (Vgt) (Max): 2.2 V
- Current - Gate Trigger (Igt) (Max): 250 mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 11000A @ 50Hz
- Current - Hold (Ih) (Max): 300 mA
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Clamp On
- Package / Case: DO-200AA, A-PUK
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Package: - |
Request a Quote |
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Infineon Technologies |
IGBT TRENCH 1200V 100A TO247-3
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 100 A
- Current - Collector Pulsed (Icm): 150 A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 60A
- Power - Max: 375 W
- Switching Energy: 9.5mJ
- Input Type: Standard
- Gate Charge: 280 nC
- Td (on/off) @ 25°C: 50ns/480ns
- Test Condition: 600V, 60A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3-1
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Package: - |
Stock24 |
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Infineon Technologies |
IGBT 3 CHIP 600V WAFER
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 15 A
- Current - Collector Pulsed (Icm): 45 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 31ns/261ns
- Test Condition: 400V, 15A, 21Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: - |
Request a Quote |
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Infineon Technologies |
CONSUMER / IOT MCUS
- Core Processor: ARM® Cortex®-M0+
- Core Size: 32-Bit
- Speed: 48MHz
- Connectivity: I2C, Microwire, SPI, SSP, UART/USART
- Peripherals: Brown-out Detect/Reset, CapSense, POR, PWM, WDT
- Number of I/O: 21
- Program Memory Size: 32KB (32K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 4K x 8
- Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
- Data Converters: -
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 25-XFBGA, WLCSP
- Supplier Device Package: 25-WLCSP (1.96x2.05)
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Package: - |
Request a Quote |
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Infineon Technologies |
IC PSRAM 128MBIT HYPERBUS 24FBGA
- Memory Type: Volatile
- Memory Format: PSRAM
- Technology: PSRAM (Pseudo SRAM)
- Memory Size: 128Mbit
- Memory Interface: HyperBus
- Clock Frequency: 200 MHz
- Write Cycle Time - Word, Page: 35ns
- Access Time: 35 ns
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 24-VBGA
- Supplier Device Package: 24-FBGA (6x8)
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Package: - |
Request a Quote |
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Infineon Technologies |
IC SS CLOCK GENERATOR 8SOIC
- Type: Spread Spectrum Clock Generator
- PLL: Yes
- Input: LVCMOS, Crystal
- Output: Clock
- Number of Circuits: 1
- Ratio - Input:Output: 1:3
- Differential - Input:Output: No/No
- Frequency - Max: 166MHz
- Divider/Multiplier: Yes/No
- Voltage - Supply: 2.25V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: - |
Request a Quote |
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Infineon Technologies |
INTEGRATED CIRCUIT
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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Infineon Technologies |
IGBT MOD 1200V 2560A 5600W
- IGBT Type: -
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 2560 A
- Power - Max: 5600 W
- Vce(on) (Max) @ Vge, Ic: -
- Current - Collector Cutoff (Max): -
- Input Capacitance (Cies) @ Vce: -
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -25°C ~ 60°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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Package: - |
Request a Quote |
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Infineon Technologies |
TRAVEO-40NM
- Core Processor: ARM® Cortex®-R5F
- Core Size: 32-Bit
- Speed: 40MHz
- Connectivity: CANbus, CSIO, I2C, LINbus, SPI, UART/USART
- Peripherals: DMA, POR, PWM, WDT
- Number of I/O: 144
- Program Memory Size: 832KB (832K x 8)
- Program Memory Type: FLASH
- EEPROM Size: 112K x 8
- RAM Size: 92K x 8
- Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
- Data Converters: A/D 56x12b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 144-LQFP
- Supplier Device Package: 144-LQFP (20x20)
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Package: - |
Request a Quote |
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Infineon Technologies |
IC FLASH 2GBIT SPI/QUAD 24FBGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR (SLC)
- Memory Size: 2Gbit
- Memory Interface: SPI - Quad I/O, QPI
- Clock Frequency: 133 MHz
- Write Cycle Time - Word, Page: 1.7ms
- Access Time: 6 ns
- Voltage - Supply: 1.7V ~ 2V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 24-TBGA
- Supplier Device Package: 24-FBGA (8x8)
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Package: - |
Request a Quote |
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Infineon Technologies |
MOSFET N-CH 900V 5.1A TO262-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900 V
- Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 310µA
- Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 83W (Tc)
- Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3-1
- Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
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Package: - |
Request a Quote |
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Infineon Technologies |
PSOC4 - GENERAL
- Core Processor: ARM® Cortex®-M0+
- Core Size: 32-Bit
- Speed: 24MHz
- Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
- Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
- Number of I/O: 24
- Program Memory Size: 32KB (32K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 4K x 8
- Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
- Data Converters: A/D 16x10b; D/A 1x7/1x8b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 28-SSOP (0.209", 5.30mm Width)
- Supplier Device Package: 28-SSOP
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Package: - |
Request a Quote |
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