|
|
|
Infineon Technologies |
DIODE 600V IGBT
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 12A
- Current - Collector Pulsed (Icm): 18A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
- Power - Max: 77W
- Switching Energy: 56µJ (on), 122µJ (off)
- Input Type: Standard
- Gate Charge: 19.5nC
- Td (on/off) @ 25°C: 27ns/75ns
- Test Condition: 400V, 6A, 47 Ohm, 15V
- Reverse Recovery Time (trr): 74ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
- Supplier Device Package: I-Pak
|
Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock2,928 |
|
|
|
|
Infineon Technologies |
MOSFET N-CH 100V 47A TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 175W (Tc)
- Rds On (Max) @ Id, Vgs: 26 mOhm @ 33A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock4,512 |
|
|
|
|
Infineon Technologies |
MOSFET N-CH 55V 33A TO220-5
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 90µA
- Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1730pF @ 25V
- Vgs (Max): ±20V
- FET Feature: Temperature Sensing Diode
- Power Dissipation (Max): 120W (Tc)
- Rds On (Max) @ Id, Vgs: 18 mOhm @ 12A, 10V
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-220-5
- Package / Case: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB
|
Package: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB |
Stock93,396 |
|
|
|
|
Infineon Technologies |
MOSFET N-CH 55V 56A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2430pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 110W (Tc)
- Rds On (Max) @ Id, Vgs: 16 mOhm @ 34A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock7,744 |
|
|
|
|
Infineon Technologies |
MOSFET N-CH 30V 14A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.35V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 14A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock15,984 |
|
|
|
|
Infineon Technologies |
MOSFET N-CH 40V 120A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3183pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 99W (Tc)
- Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 70A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock22,656 |
|
|
|
|
Infineon Technologies |
MOSFET N-CH 200V 13A I-PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 110W (Tc)
- Rds On (Max) @ Id, Vgs: 235 mOhm @ 8A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: IPAK (TO-251)
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
|
Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock7,984 |
|
|
|
|
Infineon Technologies |
MOSFET N-CH 60V 86A DIRECTFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.9V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2120pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
- Rds On (Max) @ Id, Vgs: 7 mOhm @ 17A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DIRECTFET? MN
- Package / Case: DirectFET? Isometric MN
|
Package: DirectFET? Isometric MN |
Stock166,176 |
|
|
|
|
Infineon Technologies |
MOSFET N-CH 25V 23A TSDSON-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 12V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
- Rds On (Max) @ Id, Vgs: 1.8 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSDSON-8-FL
- Package / Case: 8-PowerTDFN
|
Package: 8-PowerTDFN |
Stock441,888 |
|
|
|
|
Infineon Technologies |
IC AMP RF LDMOS
- Transistor Type: LDMOS (Dual)
- Frequency: 2.69GHz
- Gain: 20dB
- Voltage - Test: 28V
- Current Rating: -
- Noise Figure: -
- Current - Test: 170mA
- Power - Output: 5W
- Voltage - Rated: 65V
- Package / Case: H-37248-4
- Supplier Device Package: H-37248-4
|
Package: H-37248-4 |
Stock4,544 |
|
|
|
|
Infineon Technologies |
TRANS RF NPN 42GHZ 4.7V SOT343
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 4.7V
- Frequency - Transition: 42GHz
- Noise Figure (dB Typ @ f): 0.5dB ~ 0.75dB @ 1.8GHz ~ 6GHz
- Gain: 27.5dB
- Power - Max: 160mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V
- Current - Collector (Ic) (Max): 30mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-SMD, Flat Leads
- Supplier Device Package: 4-TSFP
|
Package: 4-SMD, Flat Leads |
Stock27,330 |
|
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 4V 110MA TSLP-2
- Diode Type: Schottky - Single
- Voltage - Peak Reverse (Max): 4V
- Current - Max: 110mA
- Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz
- Resistance @ If, F: -
- Power Dissipation (Max): 100mW
- Operating Temperature: 150°C (TJ)
- Package / Case: SOD-882
- Supplier Device Package: PG-TSLP-2
|
Package: SOD-882 |
Stock4,288 |
|
|
|
|
Infineon Technologies |
DIODE GEN PURP 80V 250MA SOT23-3
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 80V
- Current - Average Rectified (Io): 250mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 4ns
- Current - Reverse Leakage @ Vr: 1µA @ 70V
- Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23-3
- Operating Temperature - Junction: -65°C ~ 150°C
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock7,712 |
|
|
|
|
Infineon Technologies |
DIODE 650V 80A CC RAPID1 TO247-3
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io) (per Diode): 40A
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 40A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 77ns
- Current - Reverse Leakage @ Vr: 40µA @ 650V
- Operating Temperature - Junction: -40°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
|
Package: TO-247-3 |
Stock7,472 |
|
|
|
|
Infineon Technologies |
DIODE ARRAY GP 80V 200MA SOT23
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 80V
- Current - Average Rectified (Io) (per Diode): 200mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 1.5µs
- Current - Reverse Leakage @ Vr: 5nA @ 75V
- Operating Temperature - Junction: 150°C (Max)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock97,944 |
|
|
|
|
Infineon Technologies |
IC MOSFET DRVR HI/LO SIDE 16SOIC
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 3.3 V ~ 20 V
- Logic Voltage - VIL, VIH: 6V, 9.5V
- Current - Peak Output (Source, Sink): 2A, 2A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 25ns, 17ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 16-SOIC
|
Package: 16-SOIC (0.295", 7.50mm Width) |
Stock230,568 |
|
|
|
|
Infineon Technologies |
IC ETHERNET USB NETWORK 100-LQFP
- Protocol: Ethernet
- Function: Controller
- Interface: USB
- Standards: IEEE 802.3, 10/100 Base-T/TX PHY
- Voltage - Supply: 3 V ~ 3.6 V
- Current - Supply: 150mA
- Operating Temperature: -40°C ~ 125°C
- Package / Case: 100-LQFP
- Supplier Device Package: P-LQFP-100
|
Package: 100-LQFP |
Stock43,200 |
|
|
|
|
Infineon Technologies |
IC MCU 32BIT 200KB FLASH 40VQFN
- Core Processor: ARM? Cortex?-M0
- Core Size: 32-Bit
- Speed: 48MHz
- Connectivity: I2C, LIN, SPI, UART/USART
- Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
- Number of I/O: 27
- Program Memory Size: 200KB (200K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 16K x 8
- Voltage - Supply (Vcc/Vdd): 1.8 V ~ 5.5 V
- Data Converters: A/D 12x12b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Stock3,584 |
|
|
|
|
Infineon Technologies |
MOD PHOTO DETECT RCVR 700NM TTL
- Data Rate: 50Mbps
- Voltage - Supply: 4.75 V ~ 5.25 V
- Power - Minimum Receivable: -22dBm
- Current - Supply: 4mA
- Applications: General Purpose
|
Package: - |
Stock5,562 |
|
|
|
|
Infineon Technologies |
IGBT TRENCH FS 650V 30A DIE
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 30 A
- Current - Collector Pulsed (Icm): 90 A
- Vce(on) (Max) @ Vge, Ic: 2.32V @ 15V, 30A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
|
Package: - |
Request a Quote |
|
|
|
|
Infineon Technologies |
CCG3PA
- Protocol: USB
- Function: Controller
- Interface: I2C
- Standards: -
- Voltage - Supply: 3V ~ 24.5V
- Current - Supply: 10mA
- Operating Temperature: -40°C ~ 105°C (TA)
- Package / Case: 24-UFQFN Exposed Pad
- Supplier Device Package: 24-QFN (4x4)
|
Package: - |
Stock13,038 |
|
|
|
|
Infineon Technologies |
IC MCU 32BIT 512KB FLSH 124VFBGA
- Core Processor: ARM® Cortex®-M4F
- Core Size: 32-Bit
- Speed: 150MHz
- Connectivity: FIFO, I2C, IrDA, Microwire, SmartCard, SPI, SSP, UART/USART, USB
- Peripherals: Brown-out Detect/Reset, DMA, I2S, LCD, LVD, POR, PWM, Temp Sensor, WDT
- Number of I/O: 84
- Program Memory Size: 512KB (512K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 128K x 8
- Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
- Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7b, 1x8/12b
- Oscillator Type: External, Internal
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 124-VFBGA
- Supplier Device Package: 124-VFBGA (9x9)
|
Package: - |
Request a Quote |
|
|
|
|
Infineon Technologies |
DIODE GP 1.2KV 100A WAFER
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 100A
- Voltage - Forward (Vf) (Max) @ If: 1.97 V @ 100 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Sawn on foil
- Operating Temperature - Junction: -40°C ~ 175°C
|
Package: - |
Request a Quote |
|
|
|
|
Infineon Technologies |
LOW POWER ECONO
- IGBT Type: Trench Field Stop
- Configuration: Full Bridge Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 50 A
- Power - Max: 20 mW
- Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
- Current - Collector Cutoff (Max): 10 µA
- Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-ECONO2B
|
Package: - |
Stock42 |
|
|
|
|
Infineon Technologies |
PSOC BASED - TRUETOUCH
- Touchscreen: 2 Wire Capacitive
- Resolution (Bits): -
- Interface: I2C, SPI
- Voltage Reference: -
- Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
- Current - Supply: -
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 64-LQFP
- Supplier Device Package: 64-TQFP (10x10)
|
Package: - |
Request a Quote |
|
|
|
|
Infineon Technologies |
PSOC4 - GENERAL
- Core Processor: ARM® Cortex®-M0+
- Core Size: 32-Bit
- Speed: 48MHz
- Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
- Peripherals: Brown-out Detect/Reset, DMA, LCD, LVD, POR, PWM, WDT
- Number of I/O: 40
- Program Memory Size: 384KB (384K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 32K x 8
- Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
- Data Converters: A/D 16x12b SAR
- Oscillator Type: External, Internal
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount, Wettable Flank
- Package / Case: 48-VFQFN Exposed Pad
- Supplier Device Package: 48-QFN (7x7)
|
Package: - |
Request a Quote |
|
|
|
|
Infineon Technologies |
6ED003L06 - HALF-BRIDGE BASED MO
- Driven Configuration: Half-Bridge
- Channel Type: 3-Phase
- Number of Drivers: 6
- Gate Type: IGBT, N-Channel, P-Channel MOSFET
- Voltage - Supply: 13V ~ 17.5V
- Logic Voltage - VIL, VIH: 1.1V, 1.7V
- Current - Peak Output (Source, Sink): 165mA, 375mA
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 620 V
- Rise / Fall Time (Typ): 60ns, 26ns
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 28-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: PG-DSO-28-17
|
Package: - |
Request a Quote |
|
|
|
|
Infineon Technologies |
IC PSRAM 512MBIT HYPERBUS 24FBGA
- Memory Type: Volatile
- Memory Format: PSRAM
- Technology: PSRAM (Pseudo SRAM)
- Memory Size: 512Mbit
- Memory Interface: HyperBus
- Clock Frequency: 200 MHz
- Write Cycle Time - Word, Page: 35ns
- Access Time: 35 ns
- Voltage - Supply: 1.7V ~ 2V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 24-VBGA
- Supplier Device Package: 24-FBGA (6x8)
|
Package: - |
Request a Quote |
|
0
Login/Register
BOM
Cart
