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Infineon Technologies |
IGBT 1200V 30A 198W TO247-3
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 30A
- Current - Collector Pulsed (Icm): 52A
- Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 15A
- Power - Max: 198W
- Switching Energy: 1.9mJ
- Input Type: Standard
- Gate Charge: 130nC
- Td (on/off) @ 25°C: 18ns/580ns
- Test Condition: 800V, 15A, 33 Ohm, 15V
- Reverse Recovery Time (trr): 65ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
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Package: TO-247-3 |
Stock7,136 |
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Infineon Technologies |
IGBT 600V 28A 100W D2PAK
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 28A
- Current - Collector Pulsed (Icm): 58A
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A
- Power - Max: 100W
- Switching Energy: 600µJ (on), 580µJ (off)
- Input Type: Standard
- Gate Charge: 67nC
- Td (on/off) @ 25°C: 60ns/160ns
- Test Condition: 480V, 16A, 23 Ohm, 15V
- Reverse Recovery Time (trr): 42ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock6,944 |
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Infineon Technologies |
MOSFET N-CH 55V 25A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 57W (Tc)
- Rds On (Max) @ Id, Vgs: 37 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-PAK (TO-252AA)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock5,248 |
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Infineon Technologies |
MOSFET N-CH 20V 92A TO-262
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.45V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 79W (Tc)
- Rds On (Max) @ Id, Vgs: 6 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-262
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock5,344 |
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Infineon Technologies |
MOSFET N-CH 30V 140A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 4010pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 140W (Tc)
- Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock56,952 |
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Infineon Technologies |
MOSFET N-CH 560V 9A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 560V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 330µA
- Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 83W (Tc)
- Rds On (Max) @ Id, Vgs: 399 mOhm @ 4.9A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock2,640 |
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Infineon Technologies |
TRANS PNP 45V 0.1A SOT323
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
- Power - Max: 250mW
- Frequency - Transition: 250MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: PG-SOT323-3
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Package: SC-70, SOT-323 |
Stock6,256 |
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Infineon Technologies |
TRANS PREBIAS PNP 0.33W SOT23-3
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 1k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 150MHz
- Power - Max: 330mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock2,224 |
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Infineon Technologies |
TRANSISTOR RF NPN 12V SOT-143
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 7.5GHz
- Noise Figure (dB Typ @ f): 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz
- Gain: 10.5dB ~ 16.5dB
- Power - Max: 700mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 8V
- Current - Collector (Ic) (Max): 150mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-253-4, TO-253AA
- Supplier Device Package: PG-SOT143-4
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Package: TO-253-4, TO-253AA |
Stock6,752 |
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Infineon Technologies |
DIODE SCHOTTKY 4V 110MA TSSLP-2
- Diode Type: Schottky - Single
- Voltage - Peak Reverse (Max): 4V
- Current - Max: 110mA
- Capacitance @ Vr, F: 0.23pF @ 0V, 1MHz
- Resistance @ If, F: -
- Power Dissipation (Max): 100mW
- Operating Temperature: 150°C (TJ)
- Package / Case: 2-XFDFN
- Supplier Device Package: PG-TSSLP-2
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Package: 2-XFDFN |
Stock4,304 |
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Infineon Technologies |
IC REG LIN POS ADJ 7.5A TO263-5
- Output Configuration: Positive
- Output Type: Adjustable
- Number of Regulators: 1
- Voltage - Input (Max): 6V
- Voltage - Output (Min/Fixed): 1.25V
- Voltage - Output (Max): 5.5V
- Voltage Dropout (Max): 1.3V @ 7.5A
- Current - Output: 7.5A
- Current - Quiescent (Iq): -
- Current - Supply (Max): 10mA
- PSRR: 70dB (120Hz)
- Control Features: -
- Protection Features: Over Current, Over Temperature
- Operating Temperature: 0°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
- Supplier Device Package: TO-263-5
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Package: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA |
Stock90,000 |
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Infineon Technologies |
DUAL SYNCHRONOUS RECTIFICATION C
- Applications: Secondary-Side Controller, Synchronous Rectifier
- Voltage - Input: -
- Voltage - Supply: 4.75 V ~ 18 V
- Current - Supply: 13mA
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock6,464 |
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Infineon Technologies |
IC SWITCH LOSIDE 16CH DSO-36
- Switch Type: General Purpose
- Number of Outputs: 16
- Ratio - Input:Output: 1:16
- Output Configuration: Low Side
- Output Type: N-Channel
- Interface: SPI
- Voltage - Load: 45V (Max)
- Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
- Current - Output (Max): 500mA, 1A
- Rds On (Typ): -
- Input Type: -
- Features: Status Flag
- Fault Protection: Open Load Detect, Over Temperature, Over Voltage
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad
- Supplier Device Package: PG-DSO-36
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Package: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad |
Stock5,648 |
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Infineon Technologies |
IC DRIVER HIGH/LOW SIDE 14-SOIC
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 2.7V
- Current - Peak Output (Source, Sink): 1.9A, 2.3A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 40ns, 20ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 14-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 14-SOIC
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Package: 14-SOIC (0.154", 3.90mm Width) |
Stock91,512 |
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Infineon Technologies |
IC SHDSL TRANSCEIVER LBGA-324
- Function: Symmetrical DSL Front End (SDFE)
- Interface: ISDN, SHDSL
- Number of Circuits: 4
- Voltage - Supply: -
- Current - Supply: -
- Power (Watts): -
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 324-LBGA
- Supplier Device Package: P-LBGA-324
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Package: 324-LBGA |
Stock4,240 |
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Infineon Technologies |
IC MCU 32BIT 32KB FLASH 40VQFN
- Core Processor: ARM? Cortex?-M0
- Core Size: 32-Bit
- Speed: 32MHz
- Connectivity: I2C, LIN, SPI, UART/USART
- Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
- Number of I/O: 27
- Program Memory Size: 32KB (32K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 16K x 8
- Voltage - Supply (Vcc/Vdd): 1.8 V ~ 5.5 V
- Data Converters: A/D 16x12b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: -
- Package / Case: 40-VFQFN Exposed Pad
- Supplier Device Package: PG-VQFN-40-13
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Package: 40-VFQFN Exposed Pad |
Stock7,424 |
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Infineon Technologies |
SENSOR LINEAR PWM SSO3
- Type: Linear
- Technology: Hall Effect
- Axis: Single
- Output Type: PWM
- Sensing Range: ±50mT, ±100mT, ±200mT
- Voltage - Supply: 4.5 V ~ 5.5 V
- Current - Supply (Max): 8mA
- Current - Output (Max): 5mA
- Resolution: 12 b
- Bandwidth: Programmable
- Operating Temperature: -40°C ~ 125°C (TJ)
- Features: Selectable Scale, Temperature Compensated
- Package / Case: 3-SIP, SSO-3-10
- Supplier Device Package: SSO-3
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Package: 3-SIP, SSO-3-10 |
Stock2,430 |
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Infineon Technologies |
IC RELAY PHOTOVO 60V 1A 6-DIP
- Circuit: SPST-NO (1 Form A)
- Output Type: AC, DC
- On-State Resistance (Max): 500 mOhm
- Load Current: 1A
- Voltage - Input: 1.2VDC
- Voltage - Load: 0 ~ 60 V
- Mounting Type: Through Hole
- Termination Style: PC Pin
- Package / Case: 6-DIP (0.300", 7.62mm)
- Supplier Device Package: 6-DIP
- Relay Type: Relay
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Package: 6-DIP (0.300", 7.62mm) |
Stock12,600 |
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Infineon Technologies |
MEDIUM POWER 62MM
- IGBT Type: Trench Field Stop
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 450 A
- Power - Max: -
- Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 450A
- Current - Collector Cutoff (Max): 100 µA
- Input Capacitance (Cies) @ Vce: 70800 pF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-62MMHB
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Package: - |
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Infineon Technologies |
MOSFET N-CH 100V 16A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 115mOhm @ 10A, 10V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA (DPAK)
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
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Infineon Technologies |
PSOC BASED - TRUETOUCH
- Touchscreen: 2 Wire Capacitive
- Resolution (Bits): -
- Interface: I2C
- Voltage Reference: -
- Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
- Current - Supply: -
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 128-LQFP
- Supplier Device Package: 128-TQFP (14x20)
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Package: - |
Request a Quote |
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Infineon Technologies |
INFINEON
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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Infineon Technologies |
TRAVEO-2 BODY ENTRYLEVEL
- Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
- Core Size: 32-Bit Dual-Core
- Speed: 100MHz, 160MHz
- Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
- Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
- Number of I/O: 152
- Program Memory Size: 4.063MB (4.063M x 8)
- Program Memory Type: FLASH
- EEPROM Size: 128K x 8
- RAM Size: 512K x 8
- Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
- Data Converters: A/D 82x12b SAR
- Oscillator Type: External, Internal
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 176-LQFP
- Supplier Device Package: 176-LQFP (24x24)
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Package: - |
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Infineon Technologies |
CONSUMER / IOT MCUS
- Core Processor: ARM® Cortex®-M0+
- Core Size: 32-Bit
- Speed: 48MHz
- Connectivity: I2C, Microwire, SPI, SSP, UART/USART
- Peripherals: Brown-out Detect/Reset, CapSense, POR, PWM, WDT
- Number of I/O: 21
- Program Memory Size: 64KB (64K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 8K x 8
- Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
- Data Converters: -
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 25-XFBGA, WLCSP
- Supplier Device Package: 25-WLCSP (1.96x2.05)
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Package: - |
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Infineon Technologies |
IGBT TRENCH FS 1200V 82A TO247-3
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 82 A
- Current - Collector Pulsed (Icm): 160 A
- Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A
- Power - Max: 330 W
- Switching Energy: 1.69mJ (on), 920µJ (off)
- Input Type: Standard
- Gate Charge: 290 nC
- Td (on/off) @ 25°C: 36ns/336ns
- Test Condition: -
- Reverse Recovery Time (trr): 120 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3-U06
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Package: - |
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Infineon Technologies |
MODULE IGBT 600V HYBRID PACK 2
- IGBT Type: Trench Field Stop
- Configuration: Three Phase
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 530 A
- Power - Max: 1250 W
- Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 400A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 39 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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Package: - |
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Infineon Technologies |
DIODE GEN PURP 1.6KV 735A MODULE
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1600 V
- Current - Average Rectified (Io): 735A
- Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 2200 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 40 mA @ 1600 V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: - |
Stock9 |
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Infineon Technologies |
TRENCH 40<-<100V
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 8970 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 375W (Tc)
- Rds On (Max) @ Id, Vgs: 2.5mOhm @ 170A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AC
- Package / Case: TO-247-3
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Package: - |
Request a Quote |
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