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Infineon Technologies |
MOSFET N-CH 200V 14.5A TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 14.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 1120pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 95W (Tc)
- Rds On (Max) @ Id, Vgs: 200 mOhm @ 9A, 5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO-220-3
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock4,832 |
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Infineon Technologies |
MOSFET N CH 40V 120A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4730pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 208W (Tc)
- Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D2Pak)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock4,928 |
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Infineon Technologies |
MOSFET N-CH 100V 80A TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 90µA
- Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4910pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO-220-3
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock15,552 |
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Infineon Technologies |
MOSFET N-CH 30V 40A TSDSON-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 35W (Tc)
- Rds On (Max) @ Id, Vgs: 8.8 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSDSON-8
- Package / Case: 8-PowerTDFN
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Package: 8-PowerTDFN |
Stock5,552 |
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Infineon Technologies |
MOSFET P-CH 60V 620MA SC-59-3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 620mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 160µA
- Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 176pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 800 mOhm @ 620mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SC-59
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock45,456 |
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Infineon Technologies |
MOSFET N-CH 100V 4.5A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 60 mOhm @ 2.7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock36,000 |
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Infineon Technologies |
MOSFET N-CH 60V 195A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 8970pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 375W (Tc)
- Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 170A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock31,164 |
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Infineon Technologies |
MOSFET N-CH 60V 75A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.7V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 99W (Tc)
- Rds On (Max) @ Id, Vgs: 7.3 mOhm @ 45A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock35,046 |
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Infineon Technologies |
DIODE GEN PURP 1.2KV 15A WAFER
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 15A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.9V @ 15A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 27µA @ 1200V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Sawn on foil
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: Die |
Stock5,328 |
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Infineon Technologies |
IC REG LINEAR 3.3V 300MA 8DSO
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 20V
- Voltage - Output (Min/Fixed): 3.3V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.4 @ 300mA
- Current - Output: 300mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): 60µA ~ 12mA
- PSRR: 65dB (120Hz)
- Control Features: Enable
- Protection Features: Over Current, Over Temperature, Reverse Polarity
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package: PG-DSO-8, e-Pad
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Package: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
Stock7,648 |
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Infineon Technologies |
IC REG CTRLR BUCK 32MLPQ
- Output Type: Transistor Driver
- Function: Step-Down
- Output Configuration: Positive
- Topology: Buck
- Number of Outputs: 2
- Output Phases: 2
- Voltage - Supply (Vcc/Vdd): 7.5 V ~ 14.5 V
- Frequency - Switching: 200kHz ~ 600kHz
- Duty Cycle (Max): 84%
- Synchronous Rectifier: Yes
- Clock Sync: Yes
- Serial Interfaces: -
- Control Features: Current Limit, Enable, Frequency Control, Power Good, Sequencing, Soft Start, Tracking
- Operating Temperature: -40°C ~ 125°C (TJ)
- Package / Case: 32-VFQFN Exposed Pad
- Supplier Device Package: 32-MLPQ (5x5)
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Package: 32-VFQFN Exposed Pad |
Stock7,552 |
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Infineon Technologies |
IC HISIDE PWR SWTCH TO218AB/5-1
- Switch Type: General Purpose
- Number of Outputs: 1
- Ratio - Input:Output: 1:1
- Output Configuration: High Side
- Output Type: N-Channel
- Interface: On/Off
- Voltage - Load: 5 V ~ 34 V
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 128A
- Rds On (Typ): 1.9 mOhm
- Input Type: Non-Inverting
- Features: -
- Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: TO-218-5
- Supplier Device Package: TO-218AB/5
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Package: TO-218-5 |
Stock6,656 |
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Infineon Technologies |
IC HIGH SIDE PWR SWITCH T0263-5
- Switch Type: General Purpose
- Number of Outputs: 1
- Ratio - Input:Output: 1:1
- Output Configuration: High Side
- Output Type: N-Channel
- Interface: On/Off
- Voltage - Load: 4.7 V ~ 42 V
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 1.6A
- Rds On (Typ): 190 mOhm
- Input Type: Non-Inverting
- Features: Auto Restart
- Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB
- Supplier Device Package: PG-TO263-5-2
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Package: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB |
Stock7,296 |
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Infineon Technologies |
IC DRIVER HIGH SIDE SGL 8SOIC
- Driven Configuration: -
- Channel Type: -
- Number of Drivers: -
- Gate Type: -
- Voltage - Supply: -
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): -
- Input Type: -
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Stock2,144 |
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Infineon Technologies |
IC MOSFET DRIVER HIGH-SIDE 8-DIP
- Driven Configuration: High-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 13 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 3V
- Current - Peak Output (Source, Sink): 130mA, 130mA
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 250ns, 250ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-DIP
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Package: 8-DIP (0.300", 7.62mm) |
Stock127,536 |
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Infineon Technologies |
IC IGBT DVR 1200V 8DSO
- Driven Configuration: High-Side or Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: IGBT
- Voltage - Supply: 13 V ~ 35 V
- Logic Voltage - VIL, VIH: 1.5V, 3.5V
- Current - Peak Output (Source, Sink): 4A, 3.5A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 1200V
- Rise / Fall Time (Typ): 10ns, 9ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 8-DSO
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Package: 8-SOIC (0.295", 7.50mm Width) |
Stock7,440 |
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Infineon Technologies |
IC MOTOR DRIVER 500V 23DIP
- Output Configuration: Half Bridge (3)
- Applications: AC Motors
- Interface: Logic
- Load Type: Inductive
- Technology: UMOS
- Rds On (Typ): 1.3 Ohm
- Current - Output / Channel: 2.4A
- Current - Peak Output: 15A
- Voltage - Supply: 13.5 V ~ 16.5 V
- Voltage - Load: 400V (Max)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Features: Bootstrap Circuit
- Fault Protection: UVLO
- Mounting Type: Through Hole
- Package / Case: 32-PowerDIP Module, 23 Leads
- Supplier Device Package: 23-DIP
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Package: 32-PowerDIP Module, 23 Leads |
Stock2,032 |
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Infineon Technologies |
IC MCU 8BIT 52KB FLASH 64LQFP
- Core Processor: XC800
- Core Size: 8-Bit
- Speed: 27MHz
- Connectivity: SPI, SSI, UART/USART
- Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
- Number of I/O: 40
- Program Memory Size: 52KB (52K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 3.25K x 8
- Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
- Data Converters: A/D 8x10b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: -
- Package / Case: 64-LQFP
- Supplier Device Package: 64-LQFP (10x10)
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Package: 64-LQFP |
Stock5,328 |
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Infineon Technologies |
IC MCU 32BIT 64KB FLASH 64LQFP
- Core Processor: ARM? Cortex?-M0
- Core Size: 32-Bit
- Speed: 48MHz
- Connectivity: I2C, LIN, SPI, UART/USART
- Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
- Number of I/O: 48
- Program Memory Size: 64KB (64K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 16K x 8
- Voltage - Supply (Vcc/Vdd): 1.8 V ~ 5.5 V
- Data Converters: A/D 12x12b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock4,784 |
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Infineon Technologies |
IC HALL EFFECT SWITCH 3TO92
- Function: -
- Technology: -
- Polarization: -
- Sensing Range: -
- Test Condition: -
- Voltage - Supply: -
- Current - Supply (Max): -
- Current - Output (Max): -
- Output Type: -
- Features: -
- Operating Temperature: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock4,518 |
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Infineon Technologies |
RF TXRX MODULE
- RF Family/Standard: -
- Protocol: -
- Modulation: -
- Frequency: -
- Data Rate: -
- Power - Output: -
- Sensitivity: -
- Serial Interfaces: -
- Antenna Type: -
- Memory Size: -
- Voltage - Supply: -
- Current - Receiving: -
- Current - Transmitting: -
- Mounting Type: -
- Operating Temperature: -
- Package / Case: -
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Package: - |
Stock8,532 |
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Infineon Technologies |
SICFET N-CH 1.2KV 26A TO247-3
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
- Vgs(th) (Max) @ Id: 5.7V @ 3.7mA
- Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds: 707 pF @ 800 V
- Vgs (Max): +23V, -7V
- FET Feature: -
- Power Dissipation (Max): 115W (Tc)
- Rds On (Max) @ Id, Vgs: 117mOhm @ 8.5A, 18V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3-41
- Package / Case: TO-247-3
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Package: - |
Stock1,302 |
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Infineon Technologies |
INFINEON
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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Infineon Technologies |
IC FLASH 512MBIT HYPERBUS 24FBGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR (SLC)
- Memory Size: 512Mbit
- Memory Interface: HyperBus
- Clock Frequency: 200 MHz
- Write Cycle Time - Word, Page: 1.7ms
- Access Time: 5.45 ns
- Voltage - Supply: 1.7V ~ 2V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 24-VBGA
- Supplier Device Package: 24-FBGA (6x8)
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Package: - |
Request a Quote |
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Infineon Technologies |
IGBT TRENCH FS 650V 74A TO247-4
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 74 A
- Current - Collector Pulsed (Icm): 60 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
- Power - Max: 250 W
- Switching Energy: 140µJ (on), 120µJ (off)
- Input Type: Standard
- Gate Charge: 95 nC
- Td (on/off) @ 25°C: 17ns/165ns
- Test Condition: 400V, 20A, 15Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-4
- Supplier Device Package: PG-TO247-4-3
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Package: - |
Stock51 |
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Infineon Technologies |
IC MCU 32BT 2.0625MB FLSH 144QFP
- Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
- Core Size: 32-Bit Dual-Core
- Speed: 100MHz, 160MHz
- Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
- Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
- Number of I/O: 122
- Program Memory Size: 2.0625MB (2.0625M x 8)
- Program Memory Type: FLASH
- EEPROM Size: 128K x 8
- RAM Size: 256K x 8
- Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
- Data Converters: A/D 72x12b SAR
- Oscillator Type: External, Internal
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 144-LQFP
- Supplier Device Package: 144-LQFP (20x20)
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Package: - |
Stock1,800 |
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Infineon Technologies |
SCR MODULE 6500V 850A DO200AC
- Structure: Single
- Number of SCRs, Diodes: 1 SCR
- Voltage - Off State: 6.5 kV
- Current - On State (It (AV)) (Max): 760 A
- Current - On State (It (RMS)) (Max): 850 A
- Voltage - Gate Trigger (Vgt) (Max): 2.5 V
- Current - Gate Trigger (Igt) (Max): 350 mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 10500A @ 50Hz
- Current - Hold (Ih) (Max): 350 mA
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Clamp On
- Package / Case: TO-200AC
|
Package: - |
Request a Quote |
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Infineon Technologies |
LED PX8847DDQG004XUMA1
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
|
Package: - |
Request a Quote |
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