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Infineon Technologies |
IGBT 600V 11A 58W TO220
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 11A
- Current - Collector Pulsed (Icm): 12A
- Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
- Power - Max: 58W
- Switching Energy: 140µJ (on), 62µJ (off)
- Input Type: Standard
- Gate Charge: 9nC
- Td (on/off) @ 25°C: 27ns/120ns
- Test Condition: 400V, 4A, 100 Ohm, 15V
- Reverse Recovery Time (trr): 48ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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Package: TO-220-3 |
Stock3,648 |
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Infineon Technologies |
IGBT 600V 31A 100W D2PAK
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 31A
- Current - Collector Pulsed (Icm): 120A
- Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
- Power - Max: 100W
- Switching Energy: 230µJ (on), 1.18mJ (off)
- Input Type: Standard
- Gate Charge: 51nC
- Td (on/off) @ 25°C: 21ns/200ns
- Test Condition: 480V, 17A, 23 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock332,532 |
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Infineon Technologies |
IGBT 600V 12A 39W TO220FP
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 12A
- Current - Collector Pulsed (Icm): 24A
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 8A
- Power - Max: 39W
- Switching Energy: 160µJ (on), 160µJ (off)
- Input Type: Standard
- Gate Charge: 29nC
- Td (on/off) @ 25°C: 23ns/140ns
- Test Condition: 400V, 8A, 50 Ohm, 15V
- Reverse Recovery Time (trr): 95ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220AB Full-Pak
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Package: TO-220-3 Full Pack |
Stock103,464 |
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Infineon Technologies |
MOSFET P-CH 20V 1.7A MICRO-8
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
- Vgs(th) (Max) @ Id: 700mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 15V
- Vgs (Max): ±12V
- FET Feature: Schottky Diode (Isolated)
- Power Dissipation (Max): 1.25W (Ta)
- Rds On (Max) @ Id, Vgs: 270 mOhm @ 1.2A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Micro8?
- Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
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Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
Stock2,048 |
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Infineon Technologies |
MOSFET N-CH 30V 55A I-PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 107W (Tc)
- Rds On (Max) @ Id, Vgs: 19 mOhm @ 33A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-Pak
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock2,064 |
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Infineon Technologies |
MOSFET N-CH TDSON-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
- Vgs(th) (Max) @ Id: 4.6V @ 91µA
- Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2770pF @ 75V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Rds On (Max) @ Id, Vgs: 11 mOhm @ 38A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8
- Package / Case: 8-PowerTDFN
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Package: 8-PowerTDFN |
Stock2,240 |
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Infineon Technologies |
DIODE SCHOTTKY 4V 110MA SOD-323
- Diode Type: Schottky - Single
- Voltage - Peak Reverse (Max): 4V
- Current - Max: 110mA
- Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz
- Resistance @ If, F: -
- Power Dissipation (Max): 100mW
- Operating Temperature: 150°C (TJ)
- Package / Case: SC-76, SOD-323
- Supplier Device Package: PG-SOD323-2
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Package: SC-76, SOD-323 |
Stock25,452 |
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Infineon Technologies |
IC PWR SW HI-SIDE 8DSO
- Switch Type: General Purpose
- Number of Outputs: 1
- Ratio - Input:Output: 1:1
- Output Configuration: High Side
- Output Type: N-Channel
- Interface: On/Off
- Voltage - Load: 8 V ~ 18 V
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 4A
- Rds On (Typ): 45 mOhm
- Input Type: -
- Features: -
- Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package: PG-DSO-8-43-EP
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Package: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
Stock3,904 |
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Infineon Technologies |
BOARD MOUNT CURRENT SENSORS
- Function: Current Sense
- Sensing Method: -
- Accuracy: -
- Voltage - Input: 9.5 V ~ 20 V
- Current - Output: 20mA
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-PDIP
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Package: 8-DIP (0.300", 7.62mm) |
Stock4,000 |
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Infineon Technologies |
IC CONTROLLER 2-CH SER 44-PLCC
- Applications: -
- Interface: Serial
- Voltage - Supply: 4.75 V ~ 5.25 V
- Package / Case: 44-LCC (J-Lead)
- Supplier Device Package: P-LCC-44
- Mounting Type: Surface Mount
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Package: 44-LCC (J-Lead) |
Stock5,008 |
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Infineon Technologies |
IC TXRX CAN STD HS WAKEUP 8SOIC
- Type: Transceiver
- Protocol: CAN
- Number of Drivers/Receivers: 1/1
- Duplex: Full
- Receiver Hysteresis: 200mV
- Data Rate: 1MBd
- Voltage - Supply: 4.75 V ~ 5.25 V
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: PG-DSO-8
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock5,376 |
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Infineon Technologies |
MODULE TPM125 28TSSOP
- Applications: Embedded Security Trusted Computing
- Core Processor: 16-Bit
- Program Memory Type: -
- Controller Series: -
- RAM Size: -
- Interface: LPC
- Number of I/O: 1
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock7,504 |
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Infineon Technologies |
IC SWITCH PWR LOSIDE 8DSO
- Switch Type: General Purpose
- Number of Outputs: 2
- Ratio - Input:Output: 1:1
- Output Configuration: Low Side
- Output Type: N-Channel
- Interface: On/Off
- Voltage - Load: 10V (Max)
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 350mA
- Rds On (Typ): 700 mOhm
- Input Type: Non-Inverting
- Features: Auto Restart
- Fault Protection: Over Temperature, Over Voltage
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: PG-DSO-8
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock136,434 |
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Infineon Technologies |
IC FLASH 1GBIT SPI/QUAD 24FBGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR (SLC)
- Memory Size: 1Gbit
- Memory Interface: SPI - Quad I/O, QPI
- Clock Frequency: 133 MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 24-VBGA
- Supplier Device Package: 24-FBGA (8x8)
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Package: - |
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Infineon Technologies |
HSS W/ SERIAL INTERFACE
- Switch Type: -
- Number of Outputs: -
- Ratio - Input:Output: -
- Output Configuration: -
- Output Type: -
- Interface: -
- Voltage - Load: -
- Voltage - Supply (Vcc/Vdd): -
- Current - Output (Max): -
- Rds On (Typ): -
- Input Type: -
- Features: -
- Fault Protection: -
- Operating Temperature: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
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Infineon Technologies |
TRAVEO-40NM
- Core Processor: ARM® Cortex®-R5F
- Core Size: 32-Bit
- Speed: 240MHz
- Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
- Peripherals: DMA, I2S, LVD, POR, PWM, WDT
- Number of I/O: 150
- Program Memory Size: 1.0625MB (1.0625M x 8)
- Program Memory Type: FLASH
- EEPROM Size: 112K x 8
- RAM Size: 128K x 8
- Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.2V
- Data Converters: A/D 64x12b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 176-LQFP Exposed Pad
- Supplier Device Package: 176-TEQFP (24x24)
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Package: - |
Request a Quote |
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Infineon Technologies |
IC EEPROM 256BYTE CHIP
- Applications: -
- Core Processor: -
- Program Memory Type: -
- Controller Series: -
- RAM Size: -
- Interface: -
- Number of I/O: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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Infineon Technologies |
IC FLASH 1GBIT SPI/QUAD 24FBGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR (SLC)
- Memory Size: 1Gbit
- Memory Interface: SPI - Quad I/O, QPI
- Clock Frequency: 133 MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 24-VBGA
- Supplier Device Package: 24-FBGA (8x8)
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Package: - |
Request a Quote |
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Infineon Technologies |
LEVEL SHIFT SOI
- Driven Configuration: -
- Channel Type: -
- Number of Drivers: -
- Gate Type: -
- Voltage - Supply: -
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): -
- Input Type: -
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock9,000 |
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Infineon Technologies |
MOSFET N-CH 150V 13A 8TSDSON
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
- Vgs(th) (Max) @ Id: 4V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 75 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 38W (Tc)
- Rds On (Max) @ Id, Vgs: 90mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSDSON-8
- Package / Case: 8-PowerTDFN
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Package: - |
Stock41,277 |
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Infineon Technologies |
SCR MODULE 3.6KV 700A MODULE
- Structure: Single
- Number of SCRs, Diodes: 1 SCR
- Voltage - Off State: 3.6 kV
- Current - On State (It (AV)) (Max): 240 A
- Current - On State (It (RMS)) (Max): 700 A
- Voltage - Gate Trigger (Vgt) (Max): 1.5 V
- Current - Gate Trigger (Igt) (Max): 250 mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 6100A @ 50Hz
- Current - Hold (Ih) (Max): 300 mA
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: Module
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Package: - |
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Infineon Technologies |
16-BIT FLASH RISC MICROCONTROLLE
- Core Processor: C166SV2
- Core Size: 16-Bit
- Speed: 80MHz
- Connectivity: I2C, LINbus, SPI, SSC, UART/USART
- Peripherals: I2S, POR, PWM, WDT
- Number of I/O: 40
- Program Memory Size: 576KB (576K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 58K x 8
- Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
- Data Converters: A/D 9x8/10b SAR
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 64-LQFP
- Supplier Device Package: PG-LQFP-64-13
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Package: - |
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Infineon Technologies |
IGBT MOD 1200V 50A 280W
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 50 A
- Power - Max: 280 W
- Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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Package: - |
Stock15 |
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Infineon Technologies |
IGBT MODULE 650V 70A
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 70 A
- Power - Max: -
- Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 50A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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Package: - |
Request a Quote |
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Infineon Technologies |
PSOC4 - GENERAL
- Core Processor: ARM® Cortex®-M0+
- Core Size: 32-Bit
- Speed: 48MHz
- Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
- Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
- Number of I/O: 24
- Program Memory Size: 64KB (64K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 8K x 8
- Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
- Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 28-SSOP (0.209", 5.30mm Width)
- Supplier Device Package: 28-SSOP
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Package: - |
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Infineon Technologies |
DIODE GP 1.7KV 100A WAFER
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1700 V
- Current - Average Rectified (Io): 100A
- Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 27 µA @ 1700 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Sawn on foil
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
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Infineon Technologies |
IC FLASH 512MBIT SPI/QUAD 24BGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR (SLC)
- Memory Size: 512Mbit
- Memory Interface: SPI - Quad I/O, QPI
- Clock Frequency: 166 MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 24-TBGA
- Supplier Device Package: 24-BGA (8x6)
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Package: - |
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Infineon Technologies |
SILICON CARBIDE MOSFET PG-TO263-
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Vgs(th) (Max) @ Id: 5.7V @ 7.5mA
- Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds: 1393 pF @ 400 V
- Vgs (Max): +23V, -5V
- FET Feature: -
- Power Dissipation (Max): 211W (Tc)
- Rds On (Max) @ Id, Vgs: 51mOhm @ 25A, 18V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-7-12
- Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
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Package: - |
Request a Quote |
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