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Infineon Technologies |
IGBT 600V 96A 330W TO247AC
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 96A
- Current - Collector Pulsed (Icm): 144A
- Vce(on) (Max) @ Vge, Ic: 2.14V @ 15V, 48A
- Power - Max: 330W
- Switching Energy: 625µJ (on), 1.28mJ (off)
- Input Type: Standard
- Gate Charge: 95nC
- Td (on/off) @ 25°C: 60ns/145ns
- Test Condition: 400V, 48A, 10 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AC
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Package: TO-247-3 |
Stock105,144 |
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Infineon Technologies |
MOSFET N-CH 30V 23A DIRECTFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 140A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.35V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 42nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 4110pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 75W (Tc)
- Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 23A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DIRECTFET? MX
- Package / Case: DirectFET? Isometric MX
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Package: DirectFET? Isometric MX |
Stock5,008 |
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Infineon Technologies |
MOSFET N-CH 20V 2.4A MICRO8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
- Vgs(th) (Max) @ Id: 700mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 15V
- Vgs (Max): ±12V
- FET Feature: Schottky Diode (Isolated)
- Power Dissipation (Max): 1.3W (Ta)
- Rds On (Max) @ Id, Vgs: 135 mOhm @ 1.7A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Micro8?
- Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
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Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
Stock6,480 |
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Infineon Technologies |
MOSFET N-CH 25V 50A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 30µA
- Gate Charge (Qg) (Max) @ Vgs: 41nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 5199pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 115W (Tc)
- Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: P-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock3,280 |
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Infineon Technologies |
MOSFET N-CH 40V 75A TO-262
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 140W (Tc)
- Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 75A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-262
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock18,876 |
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Infineon Technologies |
MOSFET N-CH 560V 11.6A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 560V
- Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.9V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Rds On (Max) @ Id, Vgs: 380 mOhm @ 7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock3,600 |
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Infineon Technologies |
MOSFET N-CH 30V 94A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.25V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2920pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 89W (Tc)
- Rds On (Max) @ Id, Vgs: 6 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock4,752 |
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Infineon Technologies |
MOSFET N-CH 30V 116A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 116A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 3290pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 180W (Tc)
- Rds On (Max) @ Id, Vgs: 7 mOhm @ 60A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock7,536 |
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Infineon Technologies |
MOSFET N CH 55V 16A SOT 223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.9nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 35W (Tc)
- Rds On (Max) @ Id, Vgs: 58 mOhm @ 9.6A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-Pak
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock6,336 |
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Infineon Technologies |
MOSFET N-CH 40V 50A TO252-3-313
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 15µA
- Gate Charge (Qg) (Max) @ Vgs: 18.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 41W (Tc)
- Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3-313
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock6,832 |
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Infineon Technologies |
MOSFET 2P-CH 30V 4.9A 8SOIC
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: 58 mOhm @ 4.9A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC
- Supplier Device Package: 8-SO
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Package: 8-SOIC |
Stock67,488 |
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Infineon Technologies |
TRANS 2NPN 65V 0.1A SOT363
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 65V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
- Power - Max: 250mW
- Frequency - Transition: 250MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-VSSOP, SC-88, SOT-363
- Supplier Device Package: PG-SOT363-6
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Package: 6-VSSOP, SC-88, SOT-363 |
Stock49,290 |
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Infineon Technologies |
DIODE SCHOTTKY RF CC SOT-323
- Diode Type: Schottky - 1 Pair Common Cathode
- Voltage - Peak Reverse (Max): 4V
- Current - Max: 130mA
- Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
- Resistance @ If, F: 15 Ohm @ 5mA, 10kHz
- Power Dissipation (Max): 150mW
- Operating Temperature: 150°C (TJ)
- Package / Case: SC-70, SOT-323
- Supplier Device Package: PG-SOT323-3
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Package: SC-70, SOT-323 |
Stock7,056 |
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Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Stock5,632 |
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Infineon Technologies |
IC REG LINEAR 400MA TO252-3
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 40V
- Voltage - Output (Min/Fixed): 5V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.5V @ 250mA
- Current - Output: 400mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): 220µA ~ 30mA
- PSRR: 60dB (100Hz)
- Control Features: -
- Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: PG-TO252-3
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock4,160 |
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Infineon Technologies |
IC DRIVER SPI 8CH LS 24SSOP
- Switch Type: Relay, Solenoid Driver
- Number of Outputs: 8
- Ratio - Input:Output: 1:2
- Output Configuration: Low Side
- Output Type: N-Channel
- Interface: SPI
- Voltage - Load: 4.5 V ~ 5.5 V
- Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
- Current - Output (Max): 290mA
- Rds On (Typ): 800 mOhm
- Input Type: -
- Features: -
- Fault Protection: Open Load Detect, Over Temperature
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: 24-SSOP (0.154", 3.90mm Width)
- Supplier Device Package: PG-SSOP-24-7
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Package: 24-SSOP (0.154", 3.90mm Width) |
Stock7,296 |
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Infineon Technologies |
IC DRIVER HIGH/LOW SIDE 8-SOIC
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 3V
- Current - Peak Output (Source, Sink): 210mA, 360mA
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 100ns, 50ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock214,548 |
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Infineon Technologies |
TXRX MULT-MODE 850NM 1.3GBIT
- Data Rate: 1.3Gbps
- Wavelength: 850nm
- Applications: Ethernet
- Voltage - Supply: 3.1 V ~ 3.5 V
- Connector Type: SC
- Mounting Type: Through Hole
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Package: - |
Stock7,074 |
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Infineon Technologies |
IC SWITCH PROXIMITY INDCT CHIP
- Type: Proximity Only
- Proximity Detection: Yes
- Number of Inputs: 1
- LED Driver Channels: -
- Interface: -
- Resolution: -
- Voltage - Supply: 3.1 V ~ 40 V
- Current - Supply: 550µA
- Operating Temperature: -40°C ~ 110°C
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock3,636 |
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Infineon Technologies |
INFINEON
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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Infineon Technologies |
IC FLASH 64MBIT SPI/QUAD 8SOIC
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 64Mbit
- Memory Interface: SPI - Quad I/O, QPI
- Clock Frequency: 108 MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.209", 5.30mm Width)
- Supplier Device Package: 8-SOIC
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Package: - |
Stock6,675 |
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Infineon Technologies |
PSOC BASED - TRUETOUCH
- Touchscreen: 2 Wire Capacitive
- Resolution (Bits): -
- Interface: I2C
- Voltage Reference: -
- Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
- Current - Supply: -
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x14)
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Package: - |
Request a Quote |
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Infineon Technologies |
IC SOC MOTOR DRIVER 48VQFN
- Applications: -
- Core Processor: ARM® Cortex®-M3
- Program Memory Type: FLASH (128kB)
- Controller Series: TLE987x
- RAM Size: 6K x 8
- Interface: DMA, LIN, SPI, SSC, UART
- Number of I/O: 10
- Voltage - Supply: 5.5V ~ 28V
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 48-VFQFN Exposed Pad
- Supplier Device Package: PG-VQFN-48-29
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Package: - |
Stock7,500 |
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Infineon Technologies |
IC PSRAM 64MBIT SPI/OCTAL 24FBGA
- Memory Type: Volatile
- Memory Format: PSRAM
- Technology: PSRAM (Pseudo SRAM)
- Memory Size: 64Mbit
- Memory Interface: SPI - Octal I/O
- Clock Frequency: 166 MHz
- Write Cycle Time - Word, Page: 36ns
- Access Time: 36 ns
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 24-VBGA
- Supplier Device Package: 24-FBGA (6x8)
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Package: - |
Request a Quote |
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Infineon Technologies |
MOSFET N-CH 60V 50A TO252-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 34µA
- Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 71W (Tc)
- Rds On (Max) @ Id, Vgs: 8.8mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3-311
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Request a Quote |
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Infineon Technologies |
ACOUSTIC ECHO CANCELLER ACE
- Function: -
- Interface: -
- Number of Circuits: -
- Voltage - Supply: -
- Current - Supply: -
- Power (Watts): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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Infineon Technologies |
IGBT TRENCH 600V 12A TO251-3
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 12 A
- Current - Collector Pulsed (Icm): 18 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A
- Power - Max: 100 W
- Switching Energy: 330µJ
- Input Type: Standard
- Gate Charge: 48 nC
- Td (on/off) @ 25°C: 12ns/127ns
- Test Condition: 400V, 6A, 23Ohm, 15V
- Reverse Recovery Time (trr): 68 ns
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-251-3 Short Leads, IPAK, TO-251AA
- Supplier Device Package: PG-TO251-3
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Package: - |
Request a Quote |
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Infineon Technologies |
LOW POWER ECONO AG-ECONO2B-411
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 70 A
- Power - Max: 20 mW
- Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 50A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V
- Input: Three Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-ECONO2B
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Package: - |
Request a Quote |
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