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Infineon Technologies |
IGBT 600V 14A 49W TO220AB
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 14A
- Current - Collector Pulsed (Icm): 28A
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 8.6A
- Power - Max: 49W
- Switching Energy: 320µJ (on), 1.93mJ (off)
- Input Type: Standard
- Gate Charge: 46nC
- Td (on/off) @ 25°C: 21ns/540ns
- Test Condition: 480V, 8.6A, 75 Ohm, 15V
- Reverse Recovery Time (trr): 28ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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Package: TO-220-3 |
Stock3,200 |
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Infineon Technologies |
IGBT 600V 22A 66W DPAK
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 22A
- Current - Collector Pulsed (Icm): 44A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
- Power - Max: 66W
- Switching Energy: 190µJ (on), 920µJ (off)
- Input Type: Standard
- Gate Charge: 27nC
- Td (on/off) @ 25°C: 26ns/194ns
- Test Condition: 480V, 12A, 50 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: D-Pak
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock5,712 |
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Infineon Technologies |
IGBT 650V 74A 255W PG-TO247-3
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 650V
- Current - Collector (Ic) (Max): 74A
- Current - Collector Pulsed (Icm): 120A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
- Power - Max: 255W
- Switching Energy: 390µJ (on), 120µJ (off)
- Input Type: Standard
- Gate Charge: 95nC
- Td (on/off) @ 25°C: 22ns/165ns
- Test Condition: 400V, 20A, 15 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
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Package: TO-247-3 |
Stock7,712 |
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Infineon Technologies |
MOD HYBRID PACK DRIVE HYBRIDD-1
- IGBT Type: -
- Configuration: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Power - Max: -
- Vce(on) (Max) @ Vge, Ic: -
- Current - Collector Cutoff (Max): -
- Input Capacitance (Cies) @ Vce: -
- Input: -
- NTC Thermistor: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock5,424 |
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Infineon Technologies |
MOSFET N-CH 500V 7.6A PG-TO220FP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 13V
- Vgs(th) (Max) @ Id: 3.5V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 18.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 433pF @ 100V
- Vgs (Max): ±20V
- FET Feature: Super Junction
- Power Dissipation (Max): 28W (Tc)
- Rds On (Max) @ Id, Vgs: 500 mOhm @ 2.3A, 13V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220FP
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock37,500 |
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Infineon Technologies |
MOSFET N-CH 55V 100A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 230µA
- Gate Charge (Qg) (Max) @ Vgs: 550nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 26240pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 3 mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock6,612 |
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Infineon Technologies |
MOSFET N-CH 30V 8.3A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock22,536 |
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Infineon Technologies |
MOSFET P-CH 20V 5.4A 8-SOIC
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
- Vgs(th) (Max) @ Id: 700mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 15V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Tc)
- Rds On (Max) @ Id, Vgs: 60 mOhm @ 5.4A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock82,848 |
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Infineon Technologies |
TRANS PNP 45V 0.1A SOT323
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
- Power - Max: 250mW
- Frequency - Transition: 250MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: PG-SOT323-3
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Package: SC-70, SOT-323 |
Stock7,616 |
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Infineon Technologies |
TRANS PREBIAS NPN 250MW SC75
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 130MHz
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: PG-SC-75
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Package: SC-75, SOT-416 |
Stock6,800 |
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Infineon Technologies |
TRANSISTOR NPN RF 12V SOT-323
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 8GHz
- Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
- Gain: 19dB
- Power - Max: 250mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V
- Current - Collector (Ic) (Max): 35mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: PG-SOT323-3
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Package: SC-70, SOT-323 |
Stock6,048 |
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Infineon Technologies |
DIODE GP 80V 100MA SOT23
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 80V
- Current - Average Rectified (Io) (per Diode): 100mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 50mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 1.5µs
- Current - Reverse Leakage @ Vr: 5nA @ 75V
- Operating Temperature - Junction: 150°C (Max)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock7,824 |
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Infineon Technologies |
IC SOLENOID DRIVER 3CH 36DSO
- Switch Type: Relay, Solenoid Driver
- Number of Outputs: 3
- Ratio - Input:Output: 1:3
- Output Configuration: High Side or Low Side
- Output Type: N-Channel
- Interface: SPI
- Voltage - Load: 5.5 V ~ 40 V
- Voltage - Supply (Vcc/Vdd): 4.75 V ~ 5.25 V
- Current - Output (Max): 1.6A
- Rds On (Typ): 250 mOhm (Max)
- Input Type: -
- Features: Slew Rate Controlled
- Fault Protection: Current Limiting (Fixed), Over Temperature
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: -
- Supplier Device Package: PG-DSO-36
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Package: - |
Stock6,208 |
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Infineon Technologies |
IC MCU 16BIT 576KB FLASH 100LQFP
- Core Processor: C166SV2
- Core Size: 16-Bit
- Speed: 66MHz
- Connectivity: CAN, EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI
- Peripherals: I2S, POR, PWM, WDT
- Number of I/O: 75
- Program Memory Size: 576KB (576K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 50K x 8
- Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
- Data Converters: A/D 16x10b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: -
- Package / Case: 100-LQFP Exposed Pad
- Supplier Device Package: 100-LQFP (14x14)
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Package: 100-LQFP Exposed Pad |
Stock6,864 |
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Infineon Technologies |
IC MCU 32BIT 1MB FLASH 176LQFP
- Core Processor: TriCore?
- Core Size: 32-Bit
- Speed: 80MHz
- Connectivity: ASC, CAN, MLI, MSC, SSC
- Peripherals: DMA, POR, WDT
- Number of I/O: 81
- Program Memory Size: 1MB (1M x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 52K x 8
- Voltage - Supply (Vcc/Vdd): 1.42 V ~ 1.58 V
- Data Converters: A/D 2x10b; A/D 32x8b,10b,12b
- Oscillator Type: External
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: -
- Package / Case: 176-LQFP
- Supplier Device Package: 176-LQFP (24x24)
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Package: 176-LQFP |
Stock4,736 |
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Infineon Technologies |
EMBEDDED POWER
- Applications: Automotive
- Core Processor: XC800
- Program Memory Type: FLASH (64 kB)
- Controller Series: -
- RAM Size: 3.25K x 8
- Interface: LIN, SSI, UART
- Number of I/O: 11
- Voltage - Supply: 3 V ~ 27 V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 48-VFQFN Exposed Pad
- Supplier Device Package: PG-VQFN-48-29
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Package: 48-VFQFN Exposed Pad |
Stock4,976 |
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Infineon Technologies |
SEMICONDUCTOR OTHER
- Core Processor: -
- Core Size: -
- Speed: -
- Connectivity: -
- Peripherals: -
- Number of I/O: -
- Program Memory Size: -
- Program Memory Type: -
- EEPROM Size: -
- RAM Size: -
- Voltage - Supply (Vcc/Vdd): -
- Data Converters: -
- Oscillator Type: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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Infineon Technologies |
SIC CHIP
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Request a Quote |
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Infineon Technologies |
MOSFET N-CH 650V 5A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 140µA
- Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 679 pF @ 400 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 23W (Tc)
- Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220 Full Pack
- Package / Case: TO-220-3 Full Pack
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Package: - |
Stock1,410 |
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Infineon Technologies |
ANIC ANALOG NETWORK INTERFACE CI
- Function: -
- Interface: -
- Number of Circuits: -
- Voltage - Supply: -
- Current - Supply: -
- Power (Watts): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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Infineon Technologies |
DC_MOTOR_CONTROL
- Motor Type - Stepper: Bipolar
- Motor Type - AC, DC: Brushed DC
- Function: Driver - Fully Integrated, Control and Power Stage
- Output Configuration: Half Bridge
- Interface: PWM
- Technology: DMOS
- Step Resolution: -
- Applications: General Purpose
- Current - Output: -
- Voltage - Supply: 4.5V ~ 40V
- Voltage - Load: 4.5V ~ 40V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 7-PowerSFN
- Supplier Device Package: PG-HSOF-7-1
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Package: - |
Stock8,859 |
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Infineon Technologies |
IGBT MOD 1200V 580A 2000W
- IGBT Type: Trench Field Stop
- Configuration: 2 Independent
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 580 A
- Power - Max: 2000 W
- Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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Package: - |
Stock30 |
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Infineon Technologies |
SILICON CARBIDE MOSFET
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-4
- Package / Case: TO-247-4
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Package: - |
Request a Quote |
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Infineon Technologies |
IC PSOC3
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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Infineon Technologies |
PSOC BASED - TRUETOUCH
- Touchscreen: 2 Wire Capacitive
- Resolution (Bits): -
- Interface: I2C, SPI
- Voltage Reference: -
- Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
- Current - Supply: -
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 128-LQFP
- Supplier Device Package: 128-TQFP (14x20)
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Package: - |
Request a Quote |
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Infineon Technologies |
IC MCU 32BIT 64KB FLASH 40QFN
- Core Processor: ARM® Cortex®-M0+
- Core Size: 32-Bit
- Speed: 48MHz
- Connectivity: FIFO, I2C, IrDA, LINbus, SPI, UART/USART
- Peripherals: Brown-out Detect/Reset, CapSense, DMA, POR, PWM, Temp Sensor, WDT
- Number of I/O: 34
- Program Memory Size: 64KB (64K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 8K x 8
- Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
- Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7/8b
- Oscillator Type: External, Internal
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount, Wettable Flank
- Package / Case: 40-UFQFN Exposed Pad
- Supplier Device Package: 40-QFN (6x6)
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Package: - |
Request a Quote |
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Infineon Technologies |
TRAVEO-40NM
- Core Processor: ARM® Cortex®-R5F
- Core Size: 32-Bit
- Speed: 240MHz
- Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
- Peripherals: DMA, I2S, LVD, POR, PWM, WDT
- Number of I/O: 150
- Program Memory Size: 3.0625MB (3.0625M x 8)
- Program Memory Type: FLASH
- EEPROM Size: 112K x 8
- RAM Size: 544K x 8
- Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
- Data Converters: A/D 48x12b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 176-LQFP Exposed Pad
- Supplier Device Package: 176-TEQFP (24x24)
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Package: - |
Request a Quote |
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Infineon Technologies |
LOW POWER EASY AG-EASY2B-711
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 65 A
- Power - Max: 20 mW
- Vce(on) (Max) @ Vge, Ic: -
- Current - Collector Cutoff (Max): 13 µA
- Input Capacitance (Cies) @ Vce: 15.1 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-EASY2B
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Package: - |
Stock24 |
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