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Infineon Technologies |
IGBT 600V 30A 130W TO263-3-2
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 30A
- Current - Collector Pulsed (Icm): 45A
- Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 15A
- Power - Max: 130W
- Switching Energy: 570µJ
- Input Type: Standard
- Gate Charge: 87nC
- Td (on/off) @ 25°C: 17ns/188ns
- Test Condition: 400V, 15A, 15 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: PG-TO263-3-2
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock5,008 |
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Infineon Technologies |
MOSFET N-CH 600V 20.7A TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.9V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 208W (Tc)
- Rds On (Max) @ Id, Vgs: 190 mOhm @ 13.1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock2,464 |
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Infineon Technologies |
MOSFET N-CH 100V 75A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6160pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
- Rds On (Max) @ Id, Vgs: 14 mOhm @ 45A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock6,320 |
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Infineon Technologies |
MOSFET N-CH 100V 33A TO-262
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1960pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 130W (Tc)
- Rds On (Max) @ Id, Vgs: 44 mOhm @ 16A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-262
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock4,192 |
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Infineon Technologies |
MOSFET N-CH 40V 160A TO263-7
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5300pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 2.9 mOhm @ 60A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-7-3
- Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
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Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
Stock6,736 |
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Infineon Technologies |
MOSFET N-CH 40V 100A 8TDFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4310pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 100W (Tc)
- Rds On (Max) @ Id, Vgs: 1.9 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8
- Package / Case: 8-PowerTDFN
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Package: 8-PowerTDFN |
Stock44,322 |
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Infineon Technologies |
MOSFET N-CH 250V 61A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 270µA
- Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7076pF @ 125V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 22 mOhm @ 61A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO-220-3
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock16,992 |
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Infineon Technologies |
TRANS PNP 125V 0.8A SOT-23
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 800mA
- Voltage - Collector Emitter Breakdown (Max): 125V
- Vce Saturation (Max) @ Ib, Ic: 900mV @ 30mA, 300mA
- Current - Collector Cutoff (Max): 10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V
- Power - Max: 330mW
- Frequency - Transition: 150MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock104,634 |
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Infineon Technologies |
IC REG SYNC BUCK 4A DDR 15-QFN
- Applications: Converter, DDR
- Voltage - Input: 1.5 V ~ 16 V
- Number of Outputs: 1
- Voltage - Output: 0.6 V ~ 14.4 V
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 15-PowerVQFN
- Supplier Device Package: PQFN (5x6)
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Package: 15-PowerVQFN |
Stock3,072 |
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Infineon Technologies |
IC REG LINEAR 70MA 8DSO
- Output Configuration: -
- Output Type: -
- Number of Regulators: 1
- Voltage - Input (Max): -
- Voltage - Output (Min/Fixed): -
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: 70mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): -
- PSRR: -
- Control Features: -
- Protection Features: -
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: PG-DSO-8
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock2,368 |
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Infineon Technologies |
IC PFC CONTROLLER DCM 8DIP
- Mode: Discontinuous Conduction (DCM)
- Frequency - Switching: -
- Current - Startup: 20µA
- Voltage - Supply: 12.5 V ~ 20 V
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: PG-DIP-8
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Package: 8-DIP (0.300", 7.62mm) |
Stock4,816 |
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Infineon Technologies |
IC IGBT DVR 1200V DSO8
- Driven Configuration: High-Side or Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 10 V ~ 35 V
- Logic Voltage - VIL, VIH: 1.5V, 3.5V
- Current - Peak Output (Source, Sink): 4A, 3.5A
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): 1200V
- Rise / Fall Time (Typ): 10ns, 9ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: PG-DSO-8-51
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock2,736 |
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Infineon Technologies |
IC MCU 32BIT 1MB FLASH 176LQFP
- Core Processor: TriCore?
- Core Size: 32-Bit
- Speed: 80MHz
- Connectivity: ASC, CAN, MLI, MSC, SSC
- Peripherals: DMA, POR, WDT
- Number of I/O: 81
- Program Memory Size: 1MB (1M x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 76K x 8
- Voltage - Supply (Vcc/Vdd): 1.42 V ~ 1.58 V
- Data Converters: A/D 36x12b
- Oscillator Type: External
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: -
- Package / Case: 176-LQFP
- Supplier Device Package: 176-LQFP (24x24)
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Package: 176-LQFP |
Stock3,280 |
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Infineon Technologies |
IC MCU 32BIT 1MB FLASH 144LQFP
- Core Processor: ARM? Cortex?-M4
- Core Size: 32-Bit
- Speed: 144MHz
- Connectivity: CAN, EBI/EMI, Ethernet, I2C, LIN, MMC/SD, SPI, UART/USART, USB OTG, USIC
- Peripherals: DMA, I2S, LED, POR, Touch-Sense, WDT
- Number of I/O: 119
- Program Memory Size: 1MB (1M x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 200K x 8
- Voltage - Supply (Vcc/Vdd): 3.13 V ~ 3.63 V
- Data Converters: A/D 32x12b, D/A 2x12b
- Oscillator Type: External
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: -
- Package / Case: 144-LQFP Exposed Pad
- Supplier Device Package: PG-LQFP-144-24
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Package: 144-LQFP Exposed Pad |
Stock5,568 |
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Infineon Technologies |
IC MCU 8BIT 24KB FLASH 48TQFP
- Core Processor: XC800
- Core Size: 8-Bit
- Speed: 24MHz
- Connectivity: LIN, SSI, UART/USART
- Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
- Number of I/O: 34
- Program Memory Size: 24KB (24K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 1.75K x 8
- Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
- Data Converters: A/D 8x10b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock2,288 |
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Infineon Technologies |
IC SECURITY CHIP CARD CTLR SMD
- Applications: -
- Core Processor: -
- Program Memory Type: -
- Controller Series: -
- RAM Size: -
- Interface: -
- Number of I/O: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock6,416 |
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Infineon Technologies |
TVS DIODE 14VWM 21VC TSLP2
- Type: Zener
- Unidirectional Channels: -
- Bidirectional Channels: 1
- Voltage - Reverse Standoff (Typ): 14V (Max)
- Voltage - Breakdown (Min): 14.5V (Typ)
- Voltage - Clamping (Max) @ Ipp: 21V (Typ)
- Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
- Power - Peak Pulse: -
- Power Line Protection: No
- Applications: General Purpose
- Capacitance @ Frequency: 8.5pF @ 1MHz
- Operating Temperature: -55°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOD-882
- Supplier Device Package: PG-TSLP-2
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Package: SOD-882 |
Stock6,750 |
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Infineon Technologies |
IC REG BUCK 56VQFN
- Output Type: -
- Function: -
- Output Configuration: -
- Topology: -
- Number of Outputs: -
- Output Phases: -
- Voltage - Supply (Vcc/Vdd): -
- Frequency - Switching: -
- Duty Cycle (Max): -
- Synchronous Rectifier: -
- Clock Sync: -
- Serial Interfaces: -
- Control Features: -
- Operating Temperature: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock6,016 |
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Infineon Technologies |
IC MM MCU 64LQFP
- Core Processor: -
- Core Size: -
- Speed: -
- Connectivity: -
- Peripherals: -
- Number of I/O: -
- Program Memory Size: -
- Program Memory Type: -
- EEPROM Size: -
- RAM Size: -
- Voltage - Supply (Vcc/Vdd): -
- Data Converters: -
- Oscillator Type: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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Infineon Technologies |
MOSFET_(75V 120V(
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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Infineon Technologies |
IGBT 3 CHIP 600V WAFER
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 10 A
- Current - Collector Pulsed (Icm): 30 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 29ns/266ns
- Test Condition: 400V, 10A, 25Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: - |
Request a Quote |
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Infineon Technologies |
IC MCU 32BIT 16MB FLASH 292LFBGA
- Core Processor: TriCore™
- Core Size: 32-Bit 10-Core
- Speed: 300MHz
- Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
- Peripherals: DMA, LVDS, PWM, WDT
- Number of I/O: -
- Program Memory Size: 16MB (16M x 8)
- Program Memory Type: FLASH
- EEPROM Size: 128K x 8
- RAM Size: 2.52M x 8
- Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
- Data Converters: -
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 150°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 292-LFBGA
- Supplier Device Package: PG-LFBGA-292-10
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Package: - |
Request a Quote |
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Infineon Technologies |
IC SS CLOCK GENERATOR 48QFN
- Type: Spread Spectrum Clock Generator
- PLL: Yes with Bypass
- Input: LVCMOS, Crystal
- Output: CML, HCSL, LVCMOS, LVDS, LVPECL
- Number of Circuits: 1
- Ratio - Input:Output: 3:12
- Differential - Input:Output: Yes/Yes
- Frequency - Max: 250MHz, 700MHz
- Divider/Multiplier: Yes/No
- Voltage - Supply: 1.71V ~ 1.89V, 2.25V ~ 2.75V, 3.13V ~ 3.46V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-VFQFN Exposed Pad
- Supplier Device Package: 48-QFN (7x7)
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Package: - |
Request a Quote |
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Infineon Technologies |
PSOC4 - GENERAL
- Core Processor: ARM® Cortex®-M0+
- Core Size: 32-Bit
- Speed: 24MHz
- Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
- Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
- Number of I/O: 24
- Program Memory Size: 16KB (16K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 4K x 8
- Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
- Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 28-SSOP (0.209", 5.30mm Width)
- Supplier Device Package: 28-SSOP
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Package: - |
Request a Quote |
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Infineon Technologies |
IC PSRAM 64MBIT SPI/OCTAL 24FBGA
- Memory Type: Volatile
- Memory Format: PSRAM
- Technology: PSRAM (Pseudo SRAM)
- Memory Size: 64Mbit
- Memory Interface: SPI - Octal I/O
- Clock Frequency: 200 MHz
- Write Cycle Time - Word, Page: 35ns
- Access Time: 35 ns
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 24-VBGA
- Supplier Device Package: 24-FBGA (6x8)
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Package: - |
Request a Quote |
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Infineon Technologies |
IC MCU
- Core Processor: -
- Core Size: -
- Speed: -
- Connectivity: -
- Peripherals: -
- Number of I/O: -
- Program Memory Size: -
- Program Memory Type: -
- EEPROM Size: -
- RAM Size: -
- Voltage - Supply (Vcc/Vdd): -
- Data Converters: -
- Oscillator Type: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock7,500 |
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Infineon Technologies |
IC MCU 32BIT 576KB FLASH 80LQFP
- Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
- Core Size: 32-Bit Dual-Core
- Speed: 80MHz
- Connectivity: CANbus, FIFO, I2C, LINbus, SPI, UART/USART
- Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
- Number of I/O: 59
- Program Memory Size: 576KB (576K x 8)
- Program Memory Type: FLASH
- EEPROM Size: 64K x 8
- RAM Size: 64K x 8
- Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
- Data Converters: A/D 28x12b SAR
- Oscillator Type: External, Internal
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 80-LQFP
- Supplier Device Package: 80-LQFP (12x12)
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Package: - |
Request a Quote |
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Infineon Technologies |
MOSFET N-CH 950V 7.2A TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 950 V
- Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 360µA
- Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 400 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 30W (Tc)
- Rds On (Max) @ Id, Vgs: 450mOhm @ 7.2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-313
- Package / Case: TO-220-3 Full Pack
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Package: - |
Stock1,425 |
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