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Infineon Technologies |
IGBT UFAST 600V 55A TO-247AC
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 55A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 27A
- Power - Max: 200W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AC
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Package: TO-247-3 |
Stock6,368 |
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Infineon Technologies |
IGBT 600V 12A 100W TO252
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 12A
- Current - Collector Pulsed (Icm): 18A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A
- Power - Max: 100W
- Switching Energy: 110µJ (on), 220µJ (off)
- Input Type: Standard
- Gate Charge: 48nC
- Td (on/off) @ 25°C: 12ns/127ns
- Test Condition: 400V, 6A, 23 Ohm, 15V
- Reverse Recovery Time (trr): 68ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: PG-TO252-3
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock4,128 |
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Infineon Technologies |
MOSFET N-CH 55V 61A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1720pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 91W (Tc)
- Rds On (Max) @ Id, Vgs: 11 mOhm @ 37A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock391,608 |
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Infineon Technologies |
MOSFET N-CH 55V 86A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 60nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 2880pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 130W (Tc)
- Rds On (Max) @ Id, Vgs: 8 mOhm @ 52A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock3,936 |
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Infineon Technologies |
MOSFET N-CH 600V TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 16.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 530µA
- Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 126W (Tc)
- Rds On (Max) @ Id, Vgs: 230 mOhm @ 6.4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO-220-3
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock10,368 |
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Infineon Technologies |
TRANS NPN 20V 1A SOT223
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 20V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 1V
- Power - Max: 3W
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: PG-SOT223-4
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Package: TO-261-4, TO-261AA |
Stock2,688 |
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Infineon Technologies |
IC MOD PWR HYBRID 600V 20A
- Type: -
- Configuration: -
- Current: -
- Voltage: -
- Voltage - Isolation: -
- Package / Case: Module
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Package: Module |
Stock5,520 |
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Infineon Technologies |
DIODE SCHOTTKY 30V 200MA SC79-2
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 200mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 5ns
- Current - Reverse Leakage @ Vr: 2µA @ 25V
- Capacitance @ Vr, F: 10pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-79, SOD-523
- Supplier Device Package: PG-SC79-2
- Operating Temperature - Junction: 150°C (Max)
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Package: SC-79, SOD-523 |
Stock3,264 |
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Infineon Technologies |
IC HIGH SIDE PWR SWITCH TO220-5
- Switch Type: General Purpose
- Number of Outputs: 1
- Ratio - Input:Output: 1:1
- Output Configuration: High Side
- Output Type: N-Channel
- Interface: On/Off
- Voltage - Load: 4.75 V ~ 41 V
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 8.8A
- Rds On (Typ): 35 mOhm
- Input Type: Non-Inverting
- Features: Status Flag
- Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: TO-220-5 Formed Leads
- Supplier Device Package: P-TO220-5
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Package: TO-220-5 Formed Leads |
Stock103,464 |
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Infineon Technologies |
IC HIGH SIDE PWR SWITCH TO220-5
- Switch Type: General Purpose
- Number of Outputs: 1
- Ratio - Input:Output: 1:1
- Output Configuration: High Side
- Output Type: N-Channel
- Interface: On/Off
- Voltage - Load: 5 V ~ 34 V
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 5.8A
- Rds On (Typ): 50 mOhm
- Input Type: Non-Inverting
- Features: Auto Restart, Status Flag
- Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: TO-220-5 Formed Leads
- Supplier Device Package: TO-220AB/5
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Package: TO-220-5 Formed Leads |
Stock5,664 |
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Infineon Technologies |
IC MOTOR CONTRLLR I2C/SPI 64MQFP
- Motor Type - Stepper: -
- Motor Type - AC, DC: AC, Synchronous
- Function: Controller - Commutation, Direction Management
- Output Configuration: Pre-Driver - Half Bridge (3)
- Interface: I2C, RS-232, SPI
- Technology: IGBT
- Step Resolution: -
- Applications: Appliance
- Current - Output: -
- Voltage - Supply: 1.62 V ~ 1.98 V, 3 V ~ 3.6 V
- Voltage - Load: -
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 64-LQFP
- Supplier Device Package: 64-MQFP (10x10)
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Package: 64-LQFP |
Stock6,528 |
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Infineon Technologies |
IC LED DRVR RGLTR DIM 1.2A 8DSO
- Type: DC DC Regulator
- Topology: Step-Down (Buck)
- Internal Switch(s): Yes
- Number of Outputs: 1
- Voltage - Supply (Min): 4.5V
- Voltage - Supply (Max): 40V
- Voltage - Output: -
- Current - Output / Channel: 1.2A
- Frequency: 500kHz
- Dimming: Analog, PWM
- Applications: Lighting
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-DSO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock5,232 |
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Infineon Technologies |
IC MIXER/OSC/PLL DIGITAL TSSOP38
- Type: Tuner
- Applications: NTSC, PAL
- Mounting Type: Surface Mount
- Package / Case: 38-TFSOP (0.173", 4.40mm Width)
- Supplier Device Package: P-TSSOP-38
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Package: 38-TFSOP (0.173", 4.40mm Width) |
Stock3,504 |
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Infineon Technologies |
IC CTRLR PWM QUASI-RES DSO8
- Output Isolation: -
- Internal Switch(s): -
- Voltage - Breakdown: -
- Topology: -
- Voltage - Start Up: -
- Voltage - Supply (Vcc/Vdd): -
- Duty Cycle: -
- Frequency - Switching: -
- Power (Watts): -
- Fault Protection: -
- Control Features: -
- Operating Temperature: -
- Package / Case: -
- Supplier Device Package: -
- Mounting Type: -
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Package: - |
Stock2,944 |
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Infineon Technologies |
CONTROLLER
- Protocol: -
- Function: -
- Interface: -
- Standards: -
- Voltage - Supply: -
- Current - Supply: -
- Operating Temperature: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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Infineon Technologies |
SIC 2N-CH 1200V 250A AG-62MM
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
- Rds On (Max) @ Id, Vgs: 5.81mOhm @ 250A, 15V
- Vgs(th) (Max) @ Id: 5.15V @ 80mA
- Gate Charge (Qg) (Max) @ Vgs: 496nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 14700pF @ 800V
- Power - Max: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-62MM
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Package: - |
Request a Quote |
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Infineon Technologies |
TRENCH >=100V
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 9.7A
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-25
- Package / Case: 8-PowerTDFN
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Package: - |
Request a Quote |
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Infineon Technologies |
SIC 2N-CH 1200V AG-EASY1B-2
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
- Rds On (Max) @ Id, Vgs: 11.3mOhm @ 100A, 15V
- Vgs(th) (Max) @ Id: 5.55V @ 40mA
- Gate Charge (Qg) (Max) @ Vgs: 248nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 7360pF @ 800V
- Power - Max: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-EASY1B-2
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Package: - |
Request a Quote |
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Infineon Technologies |
HIGH POWER_NEW
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 630µA
- Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 127W (Tc)
- Rds On (Max) @ Id, Vgs: 90mOhm @ 12.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3
- Package / Case: TO-247-3
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Package: - |
Stock696 |
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Infineon Technologies |
EMBEDDED POWER
- Applications: BLDC Controller
- Core Processor: ARM® Cortex®-M3
- Program Memory Type: EEPROM (8kB), FLASH (272kB)
- Controller Series: TLE988x
- RAM Size: 31K x 8
- Interface: CANbus, DMA, GPIO, SPI, SSC, UART/USART
- Number of I/O: 8
- Voltage - Supply: 5.5V ~ 28V
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 48-TQFP Exposed Pad
- Supplier Device Package: PG-TQFP-48-10
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Package: - |
Stock7,500 |
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Infineon Technologies |
BIPOLAR GENERAL PURPOSE TRANSIST
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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Infineon Technologies |
IC FLASH 1GBIT SPI/QUAD 24FBGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR (SLC)
- Memory Size: 1Gbit
- Memory Interface: SPI - Quad I/O, QPI
- Clock Frequency: 166 MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 24-VBGA
- Supplier Device Package: 24-FBGA (8x8)
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Package: - |
Request a Quote |
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Infineon Technologies |
MOSFET N CH 20V 28A PQFN 5X6 MM
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 105A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 1.1V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3710 pF @ 10 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 4.5V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PQFN (5x6)
- Package / Case: 8-PowerTDFN
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Package: - |
Request a Quote |
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Infineon Technologies |
IGBT MOD 650V 150A 430W
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 150 A
- Power - Max: 430 W
- Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 150A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 9.3 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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Package: - |
Request a Quote |
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Infineon Technologies |
MOSFET_(75V 120V( PG-TDSON-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 101A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 64µA
- Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3744 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 130W (Tc)
- Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-34
- Package / Case: 8-PowerTDFN
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Package: - |
Request a Quote |
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Infineon Technologies |
IC MCU 32BIT 256KB FLASH 76WLCSP
- Core Processor: ARM® Cortex®-M0
- Core Size: 32-Bit Single-Core
- Speed: 48MHz
- Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
- Peripherals: Bluetooth, Brown-out Detect/Reset, CapSense, DMA , LVD, POR, PWM, SmartCard, SmartSense, WDT
- Number of I/O: 36
- Program Memory Size: 256KB (256K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 32K x 8
- Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
- Data Converters: A/D 16x12b; D/A 1x7b, 1x8b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 76-UFBGA, WLCSP
- Supplier Device Package: 76-WLCSP (4.04x3.87)
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Package: - |
Request a Quote |
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Infineon Technologies |
MOSFET 100V 33A DIE
- FET Type: -
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 33A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 44mOhm @ 33A, 10V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
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Package: - |
Request a Quote |
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Infineon Technologies |
IGBT
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: -
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock3,000 |
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