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Intersil |
MOSFET 2N-CH 20V 10.1A 4QFN
- FET Type: 2 N-Channel (Dual) Common Drain
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 10.1A (Ta)
- Rds On (Max) @ Id, Vgs: 13 mOhm @ 6.5A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4V
- Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V
- Power - Max: 3.6W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-VDFN
- Supplier Device Package: 4-QFN (2x2)
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Package: 4-VDFN |
Stock7,552 |
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Standard | 20V | 10.1A (Ta) | 13 mOhm @ 6.5A, 4.5V | 1.5V @ 1mA | 11nC @ 4V | 900pF @ 10V | 3.6W | -55°C ~ 150°C (TJ) | Surface Mount | 4-VDFN | 4-QFN (2x2) |