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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 512MBIT 133MHZ 90BGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile
- Memory Size: 512Mb (16M x 32)
- Memory Interface: Parallel
- Clock Frequency: 133MHz
- Write Cycle Time - Word, Page: -
- Access Time: 5.4ns
- Voltage - Supply: 2.3 V ~ 3 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 90-LFBGA
- Supplier Device Package: 90-WBGA (8x13)
|
Package: 90-LFBGA |
Stock2,304 |
|
DRAM | SDRAM - Mobile | 512Mb (16M x 32) | Parallel | 133MHz | - | 5.4ns | 2.3 V ~ 3 V | 0°C ~ 70°C (TA) | Surface Mount | 90-LFBGA | 90-WBGA (8x13) |
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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 128MBIT 133MHZ 54BGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile
- Memory Size: 128Mb (8M x 16)
- Memory Interface: Parallel
- Clock Frequency: 133MHz
- Write Cycle Time - Word, Page: -
- Access Time: 6ns
- Voltage - Supply: 2.3 V ~ 3 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-TFBGA
- Supplier Device Package: 54-TFBGA (8x8)
|
Package: 54-TFBGA |
Stock5,104 |
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DRAM | SDRAM - Mobile | 128Mb (8M x 16) | Parallel | 133MHz | - | 6ns | 2.3 V ~ 3 V | -40°C ~ 85°C (TA) | Surface Mount | 54-TFBGA | 54-TFBGA (8x8) |
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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 128MBIT 133MHZ 54BGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile
- Memory Size: 128Mb (8M x 16)
- Memory Interface: Parallel
- Clock Frequency: 133MHz
- Write Cycle Time - Word, Page: -
- Access Time: 6ns
- Voltage - Supply: 2.3 V ~ 3 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-TFBGA
- Supplier Device Package: 54-TFBGA (8x8)
|
Package: 54-TFBGA |
Stock4,944 |
|
DRAM | SDRAM - Mobile | 128Mb (8M x 16) | Parallel | 133MHz | - | 6ns | 2.3 V ~ 3 V | -40°C ~ 85°C (TA) | Surface Mount | 54-TFBGA | 54-TFBGA (8x8) |
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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 256MBIT 133MHZ 54BGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile
- Memory Size: 256Mb (16M x 16)
- Memory Interface: Parallel
- Clock Frequency: 133MHz
- Write Cycle Time - Word, Page: -
- Access Time: 6ns
- Voltage - Supply: 2.3 V ~ 3 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-TFBGA
- Supplier Device Package: 54-TFBGA (8x8)
|
Package: 54-TFBGA |
Stock2,816 |
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DRAM | SDRAM - Mobile | 256Mb (16M x 16) | Parallel | 133MHz | - | 6ns | 2.3 V ~ 3 V | -40°C ~ 85°C (TA) | Surface Mount | 54-TFBGA | 54-TFBGA (8x8) |
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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 256MBIT 133MHZ 54BGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile
- Memory Size: 256Mb (16M x 16)
- Memory Interface: Parallel
- Clock Frequency: 133MHz
- Write Cycle Time - Word, Page: -
- Access Time: 6ns
- Voltage - Supply: 2.3 V ~ 3 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-TFBGA
- Supplier Device Package: 54-TFBGA (8x8)
|
Package: 54-TFBGA |
Stock2,384 |
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DRAM | SDRAM - Mobile | 256Mb (16M x 16) | Parallel | 133MHz | - | 6ns | 2.3 V ~ 3 V | -40°C ~ 85°C (TA) | Surface Mount | 54-TFBGA | 54-TFBGA (8x8) |
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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 256MBIT 166MHZ 54BGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile
- Memory Size: 256Mb (16M x 16)
- Memory Interface: Parallel
- Clock Frequency: 166MHz
- Write Cycle Time - Word, Page: -
- Access Time: 5.5ns
- Voltage - Supply: 2.3 V ~ 3 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-TFBGA
- Supplier Device Package: 54-TFBGA (8x8)
|
Package: 54-TFBGA |
Stock4,304 |
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DRAM | SDRAM - Mobile | 256Mb (16M x 16) | Parallel | 166MHz | - | 5.5ns | 2.3 V ~ 3 V | -40°C ~ 85°C (TA) | Surface Mount | 54-TFBGA | 54-TFBGA (8x8) |
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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 256MBIT 166MHZ 54BGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile
- Memory Size: 256Mb (16M x 16)
- Memory Interface: Parallel
- Clock Frequency: 166MHz
- Write Cycle Time - Word, Page: -
- Access Time: 5.5ns
- Voltage - Supply: 2.3 V ~ 3 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-TFBGA
- Supplier Device Package: 54-TFBGA (8x8)
|
Package: 54-TFBGA |
Stock7,312 |
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DRAM | SDRAM - Mobile | 256Mb (16M x 16) | Parallel | 166MHz | - | 5.5ns | 2.3 V ~ 3 V | -40°C ~ 85°C (TA) | Surface Mount | 54-TFBGA | 54-TFBGA (8x8) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 4MBIT 35NS 40TSOP
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: DRAM - FP
- Memory Size: 4Mb (256K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 18ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-TSOP (0.400", 10.16mm Width), 40 Leads
- Supplier Device Package: 40-TSOP
|
Package: 44-TSOP (0.400", 10.16mm Width), 40 Leads |
Stock6,416 |
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DRAM | DRAM - FP | 4Mb (256K x 16) | Parallel | - | - | 18ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width), 40 Leads | 40-TSOP |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 4MBIT 35NS 40TSOP
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: DRAM - FP
- Memory Size: 4Mb (256K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 18ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-TSOP (0.400", 10.16mm Width), 40 Leads
- Supplier Device Package: 40-TSOP
|
Package: 44-TSOP (0.400", 10.16mm Width), 40 Leads |
Stock4,672 |
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DRAM | DRAM - FP | 4Mb (256K x 16) | Parallel | - | - | 18ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width), 40 Leads | 40-TSOP |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 4MBIT 35NS 40TSOP
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: DRAM - EDO
- Memory Size: 4Mb (256K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 18ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-TSOP (0.400", 10.16mm Width), 40 Leads
- Supplier Device Package: 40-TSOP
|
Package: 44-TSOP (0.400", 10.16mm Width), 40 Leads |
Stock7,728 |
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DRAM | DRAM - EDO | 4Mb (256K x 16) | Parallel | - | - | 18ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width), 40 Leads | 40-TSOP |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 4MBIT 35NS 40TSOP
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: DRAM - EDO
- Memory Size: 4Mb (256K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 18ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-TSOP (0.400", 10.16mm Width), 40 Leads
- Supplier Device Package: 40-TSOP
|
Package: 44-TSOP (0.400", 10.16mm Width), 40 Leads |
Stock12,960 |
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DRAM | DRAM - EDO | 4Mb (256K x 16) | Parallel | - | - | 18ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width), 40 Leads | 40-TSOP |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 16MBIT 50NS 44TSOP
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: DRAM - FP
- Memory Size: 16Mb (1M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 25ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 44-TSOP II
|
Package: 44-TSOP (0.400", 10.16mm Width) |
Stock6,432 |
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DRAM | DRAM - FP | 16Mb (1M x 16) | Parallel | - | - | 25ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP II |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 16MBIT 50NS 42SOJ
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: DRAM - FP
- Memory Size: 16Mb (1M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 25ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 42-BSOJ (0.400", 10.16mm)
- Supplier Device Package: 42-SOJ
|
Package: 42-BSOJ (0.400", 10.16mm) |
Stock6,384 |
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DRAM | DRAM - FP | 16Mb (1M x 16) | Parallel | - | - | 25ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 42-BSOJ (0.400", 10.16mm) | 42-SOJ |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 16MBIT 50NS 42SOJ
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: DRAM - FP
- Memory Size: 16Mb (1M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 25ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 42-BSOJ (0.400", 10.16mm)
- Supplier Device Package: 42-SOJ
|
Package: 42-BSOJ (0.400", 10.16mm) |
Stock5,136 |
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DRAM | DRAM - FP | 16Mb (1M x 16) | Parallel | - | - | 25ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 42-BSOJ (0.400", 10.16mm) | 42-SOJ |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 16MBIT 50NS 44TSOP
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: DRAM - EDO
- Memory Size: 16Mb (1M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 25ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 44-TSOP II
|
Package: 44-TSOP (0.400", 10.16mm Width) |
Stock7,840 |
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DRAM | DRAM - EDO | 16Mb (1M x 16) | Parallel | - | - | 25ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP II |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 16MBIT 50NS 42SOJ
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: DRAM - EDO
- Memory Size: 16Mb (1M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 25ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 42-BSOJ (0.400", 10.16mm)
- Supplier Device Package: 42-SOJ
|
Package: 42-BSOJ (0.400", 10.16mm) |
Stock4,336 |
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DRAM | DRAM - EDO | 16Mb (1M x 16) | Parallel | - | - | 25ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 42-BSOJ (0.400", 10.16mm) | 42-SOJ |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 16MBIT 50NS 42SOJ
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: DRAM - EDO
- Memory Size: 16Mb (1M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 25ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 42-BSOJ (0.400", 10.16mm)
- Supplier Device Package: 42-SOJ
|
Package: 42-BSOJ (0.400", 10.16mm) |
Stock2,944 |
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DRAM | DRAM - EDO | 16Mb (1M x 16) | Parallel | - | - | 25ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 42-BSOJ (0.400", 10.16mm) | 42-SOJ |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 4MBIT 35NS 40TSOP
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: DRAM - FP
- Memory Size: 4Mb (256K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 18ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-TSOP (0.400", 10.16mm Width), 40 Leads
- Supplier Device Package: 40-TSOP
|
Package: 44-TSOP (0.400", 10.16mm Width), 40 Leads |
Stock2,800 |
|
DRAM | DRAM - FP | 4Mb (256K x 16) | Parallel | - | - | 18ns | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width), 40 Leads | 40-TSOP |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 4MBIT 35NS 40TSOP
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: DRAM - FP
- Memory Size: 4Mb (256K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 18ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-TSOP (0.400", 10.16mm Width), 40 Leads
- Supplier Device Package: 40-TSOP
|
Package: 44-TSOP (0.400", 10.16mm Width), 40 Leads |
Stock6,240 |
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DRAM | DRAM - FP | 4Mb (256K x 16) | Parallel | - | - | 18ns | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width), 40 Leads | 40-TSOP |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 4MBIT 35NS 40TSOP
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: DRAM - EDO
- Memory Size: 4Mb (256K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 18ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-TSOP (0.400", 10.16mm Width), 40 Leads
- Supplier Device Package: 40-TSOP
|
Package: 44-TSOP (0.400", 10.16mm Width), 40 Leads |
Stock4,864 |
|
DRAM | DRAM - EDO | 4Mb (256K x 16) | Parallel | - | - | 18ns | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width), 40 Leads | 40-TSOP |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 4MBIT 35NS 40TSOP
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: DRAM - EDO
- Memory Size: 4Mb (256K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 18ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-TSOP (0.400", 10.16mm Width), 40 Leads
- Supplier Device Package: 40-TSOP
|
Package: 44-TSOP (0.400", 10.16mm Width), 40 Leads |
Stock5,808 |
|
DRAM | DRAM - EDO | 4Mb (256K x 16) | Parallel | - | - | 18ns | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width), 40 Leads | 40-TSOP |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 16MBIT 50NS 54TSOP
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: DRAM - FP
- Memory Size: 16Mb (1M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 25ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 54-TSOP II
|
Package: 54-TSOP (0.400", 10.16mm Width) |
Stock5,120 |
|
DRAM | DRAM - FP | 16Mb (1M x 16) | Parallel | - | - | 25ns | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP II |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 16MBIT 50NS 54TSOP
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: DRAM - FP
- Memory Size: 16Mb (1M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 25ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 54-TSOP II
|
Package: 54-TSOP (0.400", 10.16mm Width) |
Stock7,472 |
|
DRAM | DRAM - FP | 16Mb (1M x 16) | Parallel | - | - | 25ns | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP II |
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|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 16MBIT 50NS 42SOJ
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: DRAM - FP
- Memory Size: 16Mb (1M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 25ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 42-BSOJ (0.400", 10.16mm)
- Supplier Device Package: 42-SOJ
|
Package: 42-BSOJ (0.400", 10.16mm) |
Stock9,228 |
|
DRAM | DRAM - FP | 16Mb (1M x 16) | Parallel | - | - | 25ns | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 42-BSOJ (0.400", 10.16mm) | 42-SOJ |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 16MBIT 50NS 42SOJ
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: DRAM - FP
- Memory Size: 16Mb (1M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 25ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 42-BSOJ (0.400", 10.16mm)
- Supplier Device Package: 42-SOJ
|
Package: 42-BSOJ (0.400", 10.16mm) |
Stock6,592 |
|
DRAM | DRAM - FP | 16Mb (1M x 16) | Parallel | - | - | 25ns | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 42-BSOJ (0.400", 10.16mm) | 42-SOJ |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 16MBIT 50NS 54TSOP
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: DRAM - EDO
- Memory Size: 16Mb (1M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 25ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 54-TSOP II
|
Package: 54-TSOP (0.400", 10.16mm Width) |
Stock5,424 |
|
DRAM | DRAM - EDO | 16Mb (1M x 16) | Parallel | - | - | 25ns | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP II |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 16MBIT 50NS 54TSOP
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: DRAM - EDO
- Memory Size: 16Mb (1M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 25ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 54-TSOP II
|
Package: 54-TSOP (0.400", 10.16mm Width) |
Stock6,448 |
|
DRAM | DRAM - EDO | 16Mb (1M x 16) | Parallel | - | - | 25ns | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP II |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 16MBIT 50NS 42SOJ
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: DRAM - EDO
- Memory Size: 16Mb (1M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 25ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 42-BSOJ (0.400", 10.16mm)
- Supplier Device Package: 42-SOJ
|
Package: 42-BSOJ (0.400", 10.16mm) |
Stock15,372 |
|
DRAM | DRAM - EDO | 16Mb (1M x 16) | Parallel | - | - | 25ns | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 42-BSOJ (0.400", 10.16mm) | 42-SOJ |