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ISSI, Integrated Silicon Solution Inc |
IC DRAM 256MBIT PAR 54TFBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 256Mbit
- Memory Interface: LVTTL
- Clock Frequency: 143 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 5.4 ns
- Voltage - Supply: 3V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-TFBGA
- Supplier Device Package: 54-TFBGA (8x8)
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DRAM | SDRAM | 256Mbit | LVTTL | 143 MHz | - | 5.4 ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 54-TFBGA | 54-TFBGA (8x8) |
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ISSI, Integrated Silicon Solution Inc |
2MB QSPI, 8-PIN SOP 150MIL, ROHS
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR (SLC)
- Memory Size: 2Mbit
- Memory Interface: SPI - Quad I/O, QPI
- Clock Frequency: 104 MHz
- Write Cycle Time - Word, Page: 40µs, 1.2ms
- Access Time: 8 ns
- Voltage - Supply: 2.3V ~ 3.6V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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FLASH | FLASH - NOR (SLC) | 2Mbit | SPI - Quad I/O, QPI | 104 MHz | 40µs, 1.2ms | 8 ns | 2.3V ~ 3.6V | -40°C ~ 125°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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ISSI, Integrated Silicon Solution Inc |
IC FLASH 2MBIT SPI/QUAD 8SOIC
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 2Mbit
- Memory Interface: SPI - Quad I/O, QPI, DTR
- Clock Frequency: 104 MHz
- Write Cycle Time - Word, Page: 1.2ms
- Access Time: 8 ns
- Voltage - Supply: 2.3V ~ 3.6V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: - |
Stock8,220 |
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FLASH | FLASH - NOR | 2Mbit | SPI - Quad I/O, QPI, DTR | 104 MHz | 1.2ms | 8 ns | 2.3V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ISSI, Integrated Silicon Solution Inc |
256M, 1.8V, Mobile DDR, 8Mx32, 1
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR
- Memory Size: 256Mbit
- Memory Interface: LVCMOS
- Clock Frequency: 166 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 5.5 ns
- Voltage - Supply: 1.7V ~ 1.95V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 90-TFBGA
- Supplier Device Package: 90-TFBGA (8x13)
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DRAM | SDRAM - Mobile LPDDR | 256Mbit | LVCMOS | 166 MHz | 15ns | 5.5 ns | 1.7V ~ 1.95V | 0°C ~ 70°C (TA) | Surface Mount | 90-TFBGA | 90-TFBGA (8x13) |
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ISSI, Integrated Silicon Solution Inc |
RLDRAM3 Memory, 1.15Gbit, x36, C
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: RLDRAM 3
- Memory Size: 1.152Gbit
- Memory Interface: Parallel
- Clock Frequency: 933 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 8 ns
- Voltage - Supply: 1.28V ~ 1.42V
- Operating Temperature: 0°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 168-LBGA
- Supplier Device Package: 168-FBGA (13.5x13.5)
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DRAM | RLDRAM 3 | 1.152Gbit | Parallel | 933 MHz | - | 8 ns | 1.28V ~ 1.42V | 0°C ~ 95°C (TC) | Surface Mount | 168-LBGA | 168-FBGA (13.5x13.5) |
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ISSI, Integrated Silicon Solution Inc |
4G, 0.57-0.65V/1.06-1.17/1.70-1.
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR4X
- Memory Size: 4Gbit
- Memory Interface: LVSTL
- Clock Frequency: 1.6 GHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
- Operating Temperature: -40°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 200-TFBGA
- Supplier Device Package: 200-TFBGA (10x14.5)
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DRAM | SDRAM - Mobile LPDDR4X | 4Gbit | LVSTL | 1.6 GHz | - | - | 1.06V ~ 1.17V, 1.7V ~ 1.95V | -40°C ~ 95°C (TC) | Surface Mount | 200-TFBGA | 200-TFBGA (10x14.5) |
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ISSI, Integrated Silicon Solution Inc |
16Mb QSPI, 8-pin SOP 208Mil, RoH
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR (SLC)
- Memory Size: 16Mbit
- Memory Interface: SPI - Quad I/O, QPI, DTR
- Clock Frequency: 133 MHz
- Write Cycle Time - Word, Page: 40µs, 800µs
- Access Time: 7 ns
- Voltage - Supply: 1.65V ~ 1.95V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.209", 5.30mm Width)
- Supplier Device Package: 8-SOIC
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FLASH | FLASH - NOR (SLC) | 16Mbit | SPI - Quad I/O, QPI, DTR | 133 MHz | 40µs, 800µs | 7 ns | 1.65V ~ 1.95V | -40°C ~ 125°C (TA) | Surface Mount | 8-SOIC (0.209", 5.30mm Width) | 8-SOIC |
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ISSI, Integrated Silicon Solution Inc |
RLDRAM2 Memory, 288Mbit, x36, Co
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: RLDRAM 2
- Memory Size: 288Mbit
- Memory Interface: HSTL
- Clock Frequency: 533 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 15 ns
- Voltage - Supply: 1.7V ~ 1.9V
- Operating Temperature: 0°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 144-TFBGA
- Supplier Device Package: 144-TWBGA (11x18.5)
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DRAM | RLDRAM 2 | 288Mbit | HSTL | 533 MHz | - | 15 ns | 1.7V ~ 1.9V | 0°C ~ 95°C (TC) | Surface Mount | 144-TFBGA | 144-TWBGA (11x18.5) |
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ISSI, Integrated Silicon Solution Inc |
2G, 1.8V, Mobile DDR, 64Mx32, 16
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR
- Memory Size: 2Gbit
- Memory Interface: Parallel
- Clock Frequency: 166 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 5 ns
- Voltage - Supply: 1.7V ~ 1.95V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 90-TFBGA
- Supplier Device Package: 90-TFBGA (8x13)
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DRAM | SDRAM - Mobile LPDDR | 2Gbit | Parallel | 166 MHz | 15ns | 5 ns | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Surface Mount | 90-TFBGA | 90-TFBGA (8x13) |
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ISSI, Integrated Silicon Solution Inc |
RLDRAM2 Memory, 576Mbit, x18, Co
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: RLDRAM 2
- Memory Size: 576Mbit
- Memory Interface: HSTL
- Clock Frequency: 533 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 15 ns
- Voltage - Supply: 1.7V ~ 1.9V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 144-TFBGA
- Supplier Device Package: 144-TWBGA (11x18.5)
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DRAM | RLDRAM 2 | 576Mbit | HSTL | 533 MHz | - | 15 ns | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Surface Mount | 144-TFBGA | 144-TWBGA (11x18.5) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 256MBIT PAR 54TSOP II
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 256Mbit
- Memory Interface: LVTTL
- Clock Frequency: 166 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 5.4 ns
- Voltage - Supply: 3V ~ 3.6V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 54-TSOP II
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DRAM | SDRAM | 256Mbit | LVTTL | 166 MHz | - | 5.4 ns | 3V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP II |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 4MBIT PARALLEL 32SOP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 4Mbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 45ns
- Access Time: 45 ns
- Voltage - Supply: 2.2V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 32-SOIC (0.445", 11.30mm Width)
- Supplier Device Package: 32-SOP
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SRAM | SRAM - Asynchronous | 4Mbit | Parallel | - | 45ns | 45 ns | 2.2V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 32-SOIC (0.445", 11.30mm Width) | 32-SOP |
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ISSI, Integrated Silicon Solution Inc |
IC FLASH 512GBIT EMMC 153VFBGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND (TLC)
- Memory Size: 512Gbit
- Memory Interface: eMMC_5.1
- Clock Frequency: 200 MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 153-VFBGA
- Supplier Device Package: 153-VFBGA (11.5x13)
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FLASH | FLASH - NAND (TLC) | 512Gbit | eMMC_5.1 | 200 MHz | - | - | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 153-VFBGA | 153-VFBGA (11.5x13) |
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ISSI, Integrated Silicon Solution Inc |
IC FLASH 512GBIT EMMC 153VFBGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND (TLC)
- Memory Size: 512Gbit
- Memory Interface: eMMC_5.1
- Clock Frequency: 200 MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 153-VFBGA
- Supplier Device Package: 153-VFBGA (11.5x13)
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FLASH | FLASH - NAND (TLC) | 512Gbit | eMMC_5.1 | 200 MHz | - | - | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 153-VFBGA | 153-VFBGA (11.5x13) |
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ISSI, Integrated Silicon Solution Inc |
8Mb QSPI, 8-pin SOP 150Mil, RoHS
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR (SLC)
- Memory Size: 8Mbit
- Memory Interface: SPI - Quad I/O, QPI, DTR
- Clock Frequency: 133 MHz
- Write Cycle Time - Word, Page: 40µs, 800µs
- Access Time: 7 ns
- Voltage - Supply: 2.3V ~ 3.6V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: - |
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FLASH | FLASH - NOR (SLC) | 8Mbit | SPI - Quad I/O, QPI, DTR | 133 MHz | 40µs, 800µs | 7 ns | 2.3V ~ 3.6V | -40°C ~ 125°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 4GBIT PAR 96TWBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3
- Memory Size: 4Gbit
- Memory Interface: Parallel
- Clock Frequency: 1.066 GHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 20 ns
- Voltage - Supply: 1.425V ~ 1.575V
- Operating Temperature: -40°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 96-TFBGA
- Supplier Device Package: 96-TWBGA (9x13)
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DRAM | SDRAM - DDR3 | 4Gbit | Parallel | 1.066 GHz | 15ns | 20 ns | 1.425V ~ 1.575V | -40°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-TWBGA (9x13) |
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ISSI, Integrated Silicon Solution Inc |
1G, 1.8V, Mobile DDR, 32Mx32, 20
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR
- Memory Size: 1Gbit
- Memory Interface: Parallel
- Clock Frequency: 208 MHz
- Write Cycle Time - Word, Page: 14.4ns
- Access Time: 5 ns
- Voltage - Supply: 1.7V ~ 1.95V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 90-TFBGA
- Supplier Device Package: 90-TFBGA (8x13)
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DRAM | SDRAM - Mobile LPDDR | 1Gbit | Parallel | 208 MHz | 14.4ns | 5 ns | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Surface Mount | 90-TFBGA | 90-TFBGA (8x13) |
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ISSI, Integrated Silicon Solution Inc |
8Mb QSPI, 8-pin USON 2x3mm, RoHS
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR (SLC)
- Memory Size: 8Mbit
- Memory Interface: SPI - Quad I/O, QPI, DTR
- Clock Frequency: 133 MHz
- Write Cycle Time - Word, Page: 40µs, 800µs
- Access Time: 7 ns
- Voltage - Supply: 2.3V ~ 3.6V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-UFDFN Exposed Pad
- Supplier Device Package: 8-USON (2x3)
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FLASH | FLASH - NOR (SLC) | 8Mbit | SPI - Quad I/O, QPI, DTR | 133 MHz | 40µs, 800µs | 7 ns | 2.3V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 8-UFDFN Exposed Pad | 8-USON (2x3) |
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ISSI, Integrated Silicon Solution Inc |
IC FLASH 64MBIT SPI/OCTL 24TFBGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH
- Memory Size: 64Mbit
- Memory Interface: SPI - Octal I/O
- Clock Frequency: 200 MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.7V ~ 2V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 24-TBGA
- Supplier Device Package: 24-TFBGA (6x8)
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FLASH | FLASH | 64Mbit | SPI - Octal I/O | 200 MHz | - | - | 1.7V ~ 2V | -40°C ~ 125°C (TA) | Surface Mount | 24-TBGA | 24-TFBGA (6x8) |
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ISSI, Integrated Silicon Solution Inc |
IC FLASH 4MBIT SPI/QUAD 8SOIC
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 4Mbit
- Memory Interface: SPI - Quad I/O, QPI, DTR
- Clock Frequency: 104 MHz
- Write Cycle Time - Word, Page: 1.2ms
- Access Time: 8 ns
- Voltage - Supply: 2.3V ~ 3.6V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: - |
Stock34,257 |
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FLASH | FLASH - NOR | 4Mbit | SPI - Quad I/O, QPI, DTR | 104 MHz | 1.2ms | 8 ns | 2.3V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 128MBIT PAR 54TSOP II
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 128Mbit
- Memory Interface: LVTTL
- Clock Frequency: 166 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 5.4 ns
- Voltage - Supply: 3V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 54-TSOP II
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DRAM | SDRAM | 128Mbit | LVTTL | 166 MHz | - | 5.4 ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP II |
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ISSI, Integrated Silicon Solution Inc |
2Gbit (x8, 4 bit ECC), 63 BALL V
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND (SLC)
- Memory Size: 2Gbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 25ns
- Access Time: 20 ns
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 63-VFBGA
- Supplier Device Package: 63-VFBGA (9x11)
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FLASH | FLASH - NAND (SLC) | 2Gbit | Parallel | - | 25ns | 20 ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 63-VFBGA | 63-VFBGA (9x11) |
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ISSI, Integrated Silicon Solution Inc |
RLDRAM2 Memory, 576Mbit, x18, Co
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: RLDRAM 2
- Memory Size: 576Mbit
- Memory Interface: HSTL
- Clock Frequency: 533 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 15 ns
- Voltage - Supply: 1.7V ~ 1.9V
- Operating Temperature: 0°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 144-TFBGA
- Supplier Device Package: 144-TWBGA (11x18.5)
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Package: - |
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DRAM | RLDRAM 2 | 576Mbit | HSTL | 533 MHz | - | 15 ns | 1.7V ~ 1.9V | 0°C ~ 95°C (TC) | Surface Mount | 144-TFBGA | 144-TWBGA (11x18.5) |
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ISSI, Integrated Silicon Solution Inc |
1G, 1.5V, DDR3 w/ ECC, 64Mx16, 1
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3
- Memory Size: 1Gbit
- Memory Interface: Parallel
- Clock Frequency: 800 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 20 ns
- Voltage - Supply: 1.425V ~ 1.575V
- Operating Temperature: -40°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 96-TFBGA
- Supplier Device Package: 96-TWBGA (9x13)
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Package: - |
Request a Quote |
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DRAM | SDRAM - DDR3 | 1Gbit | Parallel | 800 MHz | 15ns | 20 ns | 1.425V ~ 1.575V | -40°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-TWBGA (9x13) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 4GBIT HSUL 12 168VFBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR2
- Memory Size: 4Gbit
- Memory Interface: HSUL_12
- Clock Frequency: 400 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 5.5 ns
- Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
- Operating Temperature: -40°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 168-VFBGA
- Supplier Device Package: 168-VFBGA (12x12)
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Package: - |
Request a Quote |
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DRAM | SDRAM - Mobile LPDDR2 | 4Gbit | HSUL_12 | 400 MHz | 15ns | 5.5 ns | 1.14V ~ 1.3V, 1.7V ~ 1.95V | -40°C ~ 85°C (TC) | Surface Mount | 168-VFBGA | 168-VFBGA (12x12) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 8GBIT PARALLEL 96TWBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3L
- Memory Size: 8Gbit
- Memory Interface: Parallel
- Clock Frequency: 933 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 20 ns
- Voltage - Supply: 1.283V ~ 1.45V
- Operating Temperature: -40°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 96-TFBGA
- Supplier Device Package: 96-TWBGA (10x14)
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Package: - |
Stock6,786 |
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DRAM | SDRAM - DDR3L | 8Gbit | Parallel | 933 MHz | 15ns | 20 ns | 1.283V ~ 1.45V | -40°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-TWBGA (10x14) |
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ISSI, Integrated Silicon Solution Inc |
512M, 2.5V, DDR 32Mx16, 200MHz,
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR
- Memory Size: 512Mbit
- Memory Interface: SSTL_2
- Clock Frequency: 200 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 700 ps
- Voltage - Supply: 2.3V ~ 2.7V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 66-TSSOP (0.400", 10.16mm Width)
- Supplier Device Package: 66-TSOP II
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Package: - |
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DRAM | SDRAM - DDR | 512Mbit | SSTL_2 | 200 MHz | 15ns | 700 ps | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Surface Mount | 66-TSSOP (0.400", 10.16mm Width) | 66-TSOP II |
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ISSI, Integrated Silicon Solution Inc |
64MB,48-BGA(6X8MM),3V, ROHS,T&R,
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR (SLC)
- Memory Size: 64Mbit
- Memory Interface: CFI
- Clock Frequency: -
- Write Cycle Time - Word, Page: 70ns
- Access Time: 70 ns
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-TFBGA
- Supplier Device Package: 48-TFBGA (6x8)
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Package: - |
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FLASH | FLASH - NOR (SLC) | 64Mbit | CFI | - | 70ns | 70 ns | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 48-TFBGA | 48-TFBGA (6x8) |