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ISSI, Integrated Silicon Solution Inc |
RLDRAM2 Memory, 576Mbit, x18, Se
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: RLDRAM 2
- Memory Size: 576Mbit
- Memory Interface: HSTL
- Clock Frequency: 533 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 15 ns
- Voltage - Supply: 1.7V ~ 1.9V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 144-TFBGA
- Supplier Device Package: 144-TWBGA (11x18.5)
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DRAM | RLDRAM 2 | 576Mbit | HSTL | 533 MHz | - | 15 ns | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Surface Mount | 144-TFBGA | 144-TWBGA (11x18.5) |
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ISSI, Integrated Silicon Solution Inc |
16Mb, QUADRAM, 1.65V-1.95V, 200M
- Memory Type: Volatile
- Memory Format: PSRAM
- Technology: PSRAM (Pseudo SRAM)
- Memory Size: 16Mbit
- Memory Interface: SPI - Quad I/O
- Clock Frequency: 200 MHz
- Write Cycle Time - Word, Page: 40ns
- Access Time: -
- Voltage - Supply: 1.7V ~ 1.95V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 24-TBGA
- Supplier Device Package: 24-TFBGA (6x8)
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PSRAM | PSRAM (Pseudo SRAM) | 16Mbit | SPI - Quad I/O | 200 MHz | 40ns | - | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Surface Mount | 24-TBGA | 24-TFBGA (6x8) |
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ISSI, Integrated Silicon Solution Inc |
4Mb,High-Speed/Low Power,Async w
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 4Mbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 10ns
- Access Time: 10 ns
- Voltage - Supply: 2.4V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 44-TSOP II
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SRAM | SRAM - Asynchronous | 4Mbit | Parallel | - | 10ns | 10 ns | 2.4V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP II |
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ISSI, Integrated Silicon Solution Inc |
4Mb,Low Power,Async,512K x 8,45n
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 4Mbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 45ns
- Access Time: 45 ns
- Voltage - Supply: 4.5V ~ 5.5V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 32-SOIC (0.445", 11.30mm Width)
- Supplier Device Package: 32-SOP
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SRAM | SRAM - Asynchronous | 4Mbit | Parallel | - | 45ns | 45 ns | 4.5V ~ 5.5V | -40°C ~ 85°C (TA) | Surface Mount | 32-SOIC (0.445", 11.30mm Width) | 32-SOP |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 4GBIT PAR 78TWBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3L
- Memory Size: 4Gbit
- Memory Interface: Parallel
- Clock Frequency: 933 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 20 ns
- Voltage - Supply: 1.283V ~ 1.45V
- Operating Temperature: -40°C ~ 105°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 78-TFBGA
- Supplier Device Package: 78-TWBGA (9x10.5)
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DRAM | SDRAM - DDR3L | 4Gbit | Parallel | 933 MHz | 15ns | 20 ns | 1.283V ~ 1.45V | -40°C ~ 105°C (TC) | Surface Mount | 78-TFBGA | 78-TWBGA (9x10.5) |
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ISSI, Integrated Silicon Solution Inc |
1GB QPI/QSPI, 24-BALL LFBGA 6X8M
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR (SLC)
- Memory Size: 1Gbit
- Memory Interface: SPI - Quad I/O, QPI, DTR
- Clock Frequency: 166 MHz
- Write Cycle Time - Word, Page: 70µs, 2ms
- Access Time: 6 ns
- Voltage - Supply: 2.3V ~ 3.6V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-WDFN Exposed Pad
- Supplier Device Package: 8-WSON (8x6)
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Package: - |
Stock1,446 |
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FLASH | FLASH - NOR (SLC) | 1Gbit | SPI - Quad I/O, QPI, DTR | 166 MHz | 70µs, 2ms | 6 ns | 2.3V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 8-WDFN Exposed Pad | 8-WSON (8x6) |
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ISSI, Integrated Silicon Solution Inc |
4G, 0.57-0.65V/1.06-1.17/1.70-1.
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR4X
- Memory Size: 4Gbit
- Memory Interface: LVSTL
- Clock Frequency: 1.6 GHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
- Operating Temperature: -40°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 200-WFBGA
- Supplier Device Package: 200-VFBGA (10x14.5)
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DRAM | SDRAM - Mobile LPDDR4X | 4Gbit | LVSTL | 1.6 GHz | - | - | 1.06V ~ 1.17V, 1.7V ~ 1.95V | -40°C ~ 95°C (TC) | Surface Mount | 200-WFBGA | 200-VFBGA (10x14.5) |
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ISSI, Integrated Silicon Solution Inc |
4G, 1.5V, DDR3, 512Mx8, 1600MT/s
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3
- Memory Size: 4Gbit
- Memory Interface: Parallel
- Clock Frequency: 800 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 20 ns
- Voltage - Supply: 1.425V ~ 1.575V
- Operating Temperature: -40°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 78-TFBGA
- Supplier Device Package: 78-TWBGA (8x10.5)
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DRAM | SDRAM - DDR3 | 4Gbit | Parallel | 800 MHz | 15ns | 20 ns | 1.425V ~ 1.575V | -40°C ~ 95°C (TC) | Surface Mount | 78-TFBGA | 78-TWBGA (8x10.5) |
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ISSI, Integrated Silicon Solution Inc |
128Mb QPI/QSPI, 8-pin SOP 208Mil
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR (SLC)
- Memory Size: 128Mbit
- Memory Interface: SPI - Quad I/O, QPI, DTR
- Clock Frequency: 166 MHz
- Write Cycle Time - Word, Page: 40µs, 800µs
- Access Time: 5.5 ns
- Voltage - Supply: 1.65V ~ 1.95V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.209", 5.30mm Width)
- Supplier Device Package: 8-SOIC
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FLASH | FLASH - NOR (SLC) | 128Mbit | SPI - Quad I/O, QPI, DTR | 166 MHz | 40µs, 800µs | 5.5 ns | 1.65V ~ 1.95V | -40°C ~ 125°C (TA) | Surface Mount | 8-SOIC (0.209", 5.30mm Width) | 8-SOIC |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 128MBIT PAR 54TFBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 128Mbit
- Memory Interface: LVTTL
- Clock Frequency: 143 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 5.4 ns
- Voltage - Supply: 3V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-TFBGA
- Supplier Device Package: 54-TFBGA (8x8)
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DRAM | SDRAM | 128Mbit | LVTTL | 143 MHz | - | 5.4 ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 54-TFBGA | 54-TFBGA (8x8) |
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ISSI, Integrated Silicon Solution Inc |
Automotive (Tc: -40 to +95C), 2G
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR4
- Memory Size: 2Gbit
- Memory Interface: LVSTL
- Clock Frequency: 1.6 GHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
- Operating Temperature: -40°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 200-VFBGA
- Supplier Device Package: 200-VFBGA (10x14.5)
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Package: - |
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DRAM | SDRAM - Mobile LPDDR4 | 2Gbit | LVSTL | 1.6 GHz | - | - | 1.06V ~ 1.17V, 1.7V ~ 1.95V | -40°C ~ 95°C (TC) | Surface Mount | 200-VFBGA | 200-VFBGA (10x14.5) |
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ISSI, Integrated Silicon Solution Inc |
1G, 1.2/1.8V, LPDDR2, 64MX16, 53
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR2-S4
- Memory Size: 1Gbit
- Memory Interface: HSUL_12
- Clock Frequency: 533 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 5.5 ns
- Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
- Operating Temperature: -40°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 134-VFBGA
- Supplier Device Package: 134-VFBGA (10x11.5)
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DRAM | SDRAM - Mobile LPDDR2-S4 | 1Gbit | HSUL_12 | 533 MHz | 15ns | 5.5 ns | 1.14V ~ 1.3V, 1.7V ~ 1.95V | -40°C ~ 85°C (TC) | Surface Mount | 134-VFBGA | 134-VFBGA (10x11.5) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 128MBIT PAR 86TSOP II
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 128Mbit
- Memory Interface: LVTTL
- Clock Frequency: 143 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 5.4 ns
- Voltage - Supply: 3V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 86-TFSOP (0.400", 10.16mm Width)
- Supplier Device Package: 86-TSOP II
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DRAM | SDRAM | 128Mbit | LVTTL | 143 MHz | - | 5.4 ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 86-TFSOP (0.400", 10.16mm Width) | 86-TSOP II |
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ISSI, Integrated Silicon Solution Inc |
16Mb,High-Speed,Async,2Mbx8,10ns
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 16Mbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 10ns
- Access Time: 10 ns
- Voltage - Supply: 2.4V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 44-TSOP II
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SRAM | SRAM - Asynchronous | 16Mbit | Parallel | - | 10ns | 10 ns | 2.4V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP II |
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ISSI, Integrated Silicon Solution Inc |
2G, 1.35V, DDR3L, 256Mx8, 1866MT
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3L
- Memory Size: 2Gbit
- Memory Interface: Parallel
- Clock Frequency: 933 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 20 ns
- Voltage - Supply: 1.283V ~ 1.45V
- Operating Temperature: 0°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 78-TFBGA
- Supplier Device Package: 78-TWBGA (8x10.5)
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DRAM | SDRAM - DDR3L | 2Gbit | Parallel | 933 MHz | 15ns | 20 ns | 1.283V ~ 1.45V | 0°C ~ 95°C (TC) | Surface Mount | 78-TFBGA | 78-TWBGA (8x10.5) |
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ISSI, Integrated Silicon Solution Inc |
128Mb, 64 Ball BGA(9X9mm), 3V, R
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR (SLC)
- Memory Size: 128Mbit
- Memory Interface: CFI
- Clock Frequency: -
- Write Cycle Time - Word, Page: 70ns, 200µs
- Access Time: 70 ns
- Voltage - Supply: 3V ~ 3.6V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 64-LBGA
- Supplier Device Package: 64-LFBGA (9x9)
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FLASH | FLASH - NOR (SLC) | 128Mbit | CFI | - | 70ns, 200µs | 70 ns | 3V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 64-LBGA | 64-LFBGA (9x9) |
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ISSI, Integrated Silicon Solution Inc |
2G, 0.57-0.65V/1.06-1.17/1.70-1.
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR4
- Memory Size: 2Gbit
- Memory Interface: LVSTL
- Clock Frequency: 1.6 GHz
- Write Cycle Time - Word, Page: 18ns
- Access Time: 3.5 ns
- Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
- Operating Temperature: -40°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 200-TFBGA
- Supplier Device Package: 200-TFBGA (10x14.5)
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Package: - |
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DRAM | SDRAM - Mobile LPDDR4 | 2Gbit | LVSTL | 1.6 GHz | 18ns | 3.5 ns | 1.06V ~ 1.17V, 1.7V ~ 1.95V | -40°C ~ 95°C (TC) | Surface Mount | 200-TFBGA | 200-TFBGA (10x14.5) |
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ISSI, Integrated Silicon Solution Inc |
256Mb QPI/QSPI, 24-ball TFBGA 6x
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR (SLC)
- Memory Size: 256Mbit
- Memory Interface: SPI - Quad I/O, QPI, DTR
- Clock Frequency: 166 MHz
- Write Cycle Time - Word, Page: 50µs, 1ms
- Access Time: 6.5 ns
- Voltage - Supply: 2.3V ~ 3.6V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 24-TBGA
- Supplier Device Package: 24-TFBGA (6x8)
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FLASH | FLASH - NOR (SLC) | 256Mbit | SPI - Quad I/O, QPI, DTR | 166 MHz | 50µs, 1ms | 6.5 ns | 2.3V ~ 3.6V | -40°C ~ 125°C (TA) | Surface Mount | 24-TBGA | 24-TFBGA (6x8) |
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ISSI, Integrated Silicon Solution Inc |
8G, 1.35V, DDR3L, 512Mx16, 1600M
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3L
- Memory Size: 8Gbit
- Memory Interface: Parallel
- Clock Frequency: 800 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 20 ns
- Voltage - Supply: 1.283V ~ 1.45V
- Operating Temperature: 0°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 96-LFBGA
- Supplier Device Package: 96-LWBGA (9x13)
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DRAM | SDRAM - DDR3L | 8Gbit | Parallel | 800 MHz | 15ns | 20 ns | 1.283V ~ 1.45V | 0°C ~ 95°C (TC) | Surface Mount | 96-LFBGA | 96-LWBGA (9x13) |
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ISSI, Integrated Silicon Solution Inc |
8G, 1.35V, DDR3L, 512Mx16, 1600M
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3L
- Memory Size: 8Gbit
- Memory Interface: Parallel
- Clock Frequency: 800 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 20 ns
- Voltage - Supply: 1.283V ~ 1.45V
- Operating Temperature: -40°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 96-TFBGA
- Supplier Device Package: 96-TWBGA (10x14)
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DRAM | SDRAM - DDR3L | 8Gbit | Parallel | 800 MHz | 15ns | 20 ns | 1.283V ~ 1.45V | -40°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-TWBGA (10x14) |
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ISSI, Integrated Silicon Solution Inc |
512M, 1.8V, DDR2, 32Mx16, 333Mhz
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR2
- Memory Size: 512Mbit
- Memory Interface: SSTL_18
- Clock Frequency: 333 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 450 ps
- Voltage - Supply: 1.7V ~ 1.9V
- Operating Temperature: 0°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 84-TFBGA
- Supplier Device Package: 84-TWBGA (8x12.5)
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DRAM | SDRAM - DDR2 | 512Mbit | SSTL_18 | 333 MHz | 15ns | 450 ps | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Surface Mount | 84-TFBGA | 84-TWBGA (8x12.5) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 1GBIT PAR 96TWBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3
- Memory Size: 1Gbit
- Memory Interface: Parallel
- Clock Frequency: 933 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 20 ns
- Voltage - Supply: 1.425V ~ 1.575V
- Operating Temperature: -40°C ~ 105°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 96-TFBGA
- Supplier Device Package: 96-TWBGA (9x13)
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Package: - |
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DRAM | SDRAM - DDR3 | 1Gbit | Parallel | 933 MHz | 15ns | 20 ns | 1.425V ~ 1.575V | -40°C ~ 105°C (TC) | Surface Mount | 96-TFBGA | 96-TWBGA (9x13) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 1GBIT PAR 96TWBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3
- Memory Size: 1Gbit
- Memory Interface: Parallel
- Clock Frequency: 933 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 20 ns
- Voltage - Supply: 1.425V ~ 1.575V
- Operating Temperature: -40°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 96-TFBGA
- Supplier Device Package: 96-TWBGA (9x13)
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Package: - |
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DRAM | SDRAM - DDR3 | 1Gbit | Parallel | 933 MHz | 15ns | 20 ns | 1.425V ~ 1.575V | -40°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-TWBGA (9x13) |
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ISSI, Integrated Silicon Solution Inc |
256M, 1.8V, Mobile DDR, 16Mx16,
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR
- Memory Size: 256Mbit
- Memory Interface: Parallel
- Clock Frequency: 166 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 5.5 ns
- Voltage - Supply: 1.7V ~ 1.95V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 60-TFBGA
- Supplier Device Package: 60-TFBGA (8x10)
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Package: - |
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DRAM | SDRAM - Mobile LPDDR | 256Mbit | Parallel | 166 MHz | 15ns | 5.5 ns | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Surface Mount | 60-TFBGA | 60-TFBGA (8x10) |
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ISSI, Integrated Silicon Solution Inc |
IC FLASH 2MBIT SPI/QUAD 8USON
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 2Mbit
- Memory Interface: SPI - Quad I/O, QPI, DTR
- Clock Frequency: 104 MHz
- Write Cycle Time - Word, Page: 1.2ms
- Access Time: 8 ns
- Voltage - Supply: 2.3V ~ 3.6V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-UFDFN Exposed Pad
- Supplier Device Package: 8-USON (2x3)
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Package: - |
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FLASH | FLASH - NOR | 2Mbit | SPI - Quad I/O, QPI, DTR | 104 MHz | 1.2ms | 8 ns | 2.3V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 8-UFDFN Exposed Pad | 8-USON (2x3) |
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ISSI, Integrated Silicon Solution Inc |
IC FLASH 16MBIT SPI/QUAD 8WSON
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 16Mbit
- Memory Interface: SPI - Quad I/O, QPI, DTR
- Clock Frequency: 133 MHz
- Write Cycle Time - Word, Page: 800µs
- Access Time: -
- Voltage - Supply: 2.3V ~ 3.6V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-WDFN Exposed Pad
- Supplier Device Package: 8-WSON (8x6)
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Package: - |
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FLASH | FLASH - NOR | 16Mbit | SPI - Quad I/O, QPI, DTR | 133 MHz | 800µs | - | 2.3V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 8-WDFN Exposed Pad | 8-WSON (8x6) |
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ISSI, Integrated Silicon Solution Inc |
8Mb, Low Power/Power Saver,Async
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 8Mbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 45ns
- Access Time: 45 ns
- Voltage - Supply: 2.2V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-VFBGA
- Supplier Device Package: 48-VFBGA (6x8)
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Package: - |
Stock2,880 |
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SRAM | SRAM - Asynchronous | 8Mbit | Parallel | - | 45ns | 45 ns | 2.2V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 48-VFBGA | 48-VFBGA (6x8) |
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ISSI, Integrated Silicon Solution Inc |
Automotive (Tc: -40 to +105C), 8
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR4
- Memory Size: 8Gbit
- Memory Interface: Parallel
- Clock Frequency: 1.333 GHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 18 ns
- Voltage - Supply: 1.14V ~ 1.26V
- Operating Temperature: -40°C ~ 105°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 78-TFBGA
- Supplier Device Package: 78-TWBGA (10x14)
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Package: - |
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DRAM | SDRAM - DDR4 | 8Gbit | Parallel | 1.333 GHz | 15ns | 18 ns | 1.14V ~ 1.26V | -40°C ~ 105°C (TC) | Surface Mount | 78-TFBGA | 78-TWBGA (10x14) |