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ISSI, Integrated Silicon Solution Inc |
IC SRAM 18M PARALLEL 165TFBGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous
- Memory Size: 18Mb (512K x 36)
- Memory Interface: Parallel
- Clock Frequency: 133MHz
- Write Cycle Time - Word, Page: -
- Access Time: 6.5ns
- Voltage - Supply: 3.135 V ~ 3.465 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 165-TBGA
- Supplier Device Package: 165-TFBGA (13x15)
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Package: 165-TBGA |
Stock5,296 |
|
SRAM | SRAM - Synchronous | 18Mb (512K x 36) | Parallel | 133MHz | - | 6.5ns | 3.135 V ~ 3.465 V | -40°C ~ 85°C (TA) | Surface Mount | 165-TBGA | 165-TFBGA (13x15) |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 18M PARALLEL 165TFBGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous
- Memory Size: 18Mb (1M x 18)
- Memory Interface: Parallel
- Clock Frequency: 117MHz
- Write Cycle Time - Word, Page: -
- Access Time: 7.5ns
- Voltage - Supply: 3.135 V ~ 3.465 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 165-TBGA
- Supplier Device Package: 165-TFBGA (13x15)
|
Package: 165-TBGA |
Stock7,552 |
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SRAM | SRAM - Synchronous | 18Mb (1M x 18) | Parallel | 117MHz | - | 7.5ns | 3.135 V ~ 3.465 V | -40°C ~ 85°C (TA) | Surface Mount | 165-TBGA | 165-TFBGA (13x15) |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 18M PARALLEL 165TFBGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous
- Memory Size: 18Mb (1M x 18)
- Memory Interface: Parallel
- Clock Frequency: 133MHz
- Write Cycle Time - Word, Page: -
- Access Time: 6.5ns
- Voltage - Supply: 3.135 V ~ 3.465 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 165-TBGA
- Supplier Device Package: 165-TFBGA (13x15)
|
Package: 165-TBGA |
Stock4,048 |
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SRAM | SRAM - Synchronous | 18Mb (1M x 18) | Parallel | 133MHz | - | 6.5ns | 3.135 V ~ 3.465 V | 0°C ~ 70°C (TA) | Surface Mount | 165-TBGA | 165-TFBGA (13x15) |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 18M PARALLEL 165TFBGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous
- Memory Size: 18Mb (1M x 18)
- Memory Interface: Parallel
- Clock Frequency: 133MHz
- Write Cycle Time - Word, Page: -
- Access Time: 6.5ns
- Voltage - Supply: 3.135 V ~ 3.465 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 165-TBGA
- Supplier Device Package: 165-TFBGA (13x15)
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Package: 165-TBGA |
Stock3,888 |
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SRAM | SRAM - Synchronous | 18Mb (1M x 18) | Parallel | 133MHz | - | 6.5ns | 3.135 V ~ 3.465 V | -40°C ~ 85°C (TA) | Surface Mount | 165-TBGA | 165-TFBGA (13x15) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 1G PARALLEL 60TWBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR2
- Memory Size: 1Gb (128M x 8)
- Memory Interface: Parallel
- Clock Frequency: 333MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 450ps
- Voltage - Supply: 1.7 V ~ 1.9 V
- Operating Temperature: -40°C ~ 105°C
- Mounting Type: Surface Mount
- Package / Case: 60-TFBGA
- Supplier Device Package: 60-TWBGA (8x10.5)
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Package: 60-TFBGA |
Stock6,576 |
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DRAM | SDRAM - DDR2 | 1Gb (128M x 8) | Parallel | 333MHz | 15ns | 450ps | 1.7 V ~ 1.9 V | -40°C ~ 105°C | Surface Mount | 60-TFBGA | 60-TWBGA (8x10.5) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 1G PARALLEL 60TWBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR2
- Memory Size: 1Gb (128M x 8)
- Memory Interface: Parallel
- Clock Frequency: 333MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 450ps
- Voltage - Supply: 1.7 V ~ 1.9 V
- Operating Temperature: -40°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 60-TFBGA
- Supplier Device Package: 60-TWBGA (8x10.5)
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Package: 60-TFBGA |
Stock7,792 |
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DRAM | SDRAM - DDR2 | 1Gb (128M x 8) | Parallel | 333MHz | 15ns | 450ps | 1.7 V ~ 1.9 V | -40°C ~ 85°C (TC) | Surface Mount | 60-TFBGA | 60-TWBGA (8x10.5) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 1G PARALLEL 60TWBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR2
- Memory Size: 1Gb (128M x 8)
- Memory Interface: Parallel
- Clock Frequency: 400MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 400ps
- Voltage - Supply: 1.7 V ~ 1.9 V
- Operating Temperature: -40°C ~ 105°C
- Mounting Type: Surface Mount
- Package / Case: 60-TFBGA
- Supplier Device Package: 60-TWBGA (8x10.5)
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Package: 60-TFBGA |
Stock4,832 |
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DRAM | SDRAM - DDR2 | 1Gb (128M x 8) | Parallel | 400MHz | 15ns | 400ps | 1.7 V ~ 1.9 V | -40°C ~ 105°C | Surface Mount | 60-TFBGA | 60-TWBGA (8x10.5) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 1G PARALLEL 60TWBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR2
- Memory Size: 1Gb (128M x 8)
- Memory Interface: Parallel
- Clock Frequency: 400MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 400ps
- Voltage - Supply: 1.7 V ~ 1.9 V
- Operating Temperature: -40°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 60-TFBGA
- Supplier Device Package: 60-TWBGA (8x10.5)
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Package: 60-TFBGA |
Stock4,176 |
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DRAM | SDRAM - DDR2 | 1Gb (128M x 8) | Parallel | 400MHz | 15ns | 400ps | 1.7 V ~ 1.9 V | -40°C ~ 85°C (TC) | Surface Mount | 60-TFBGA | 60-TWBGA (8x10.5) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 1G PARALLEL 60TWBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR2
- Memory Size: 1Gb (128M x 8)
- Memory Interface: Parallel
- Clock Frequency: 333MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 450ps
- Voltage - Supply: 1.7 V ~ 1.9 V
- Operating Temperature: -40°C ~ 105°C
- Mounting Type: Surface Mount
- Package / Case: 60-TFBGA
- Supplier Device Package: 60-TWBGA (8x10.5)
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Package: 60-TFBGA |
Stock4,896 |
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DRAM | SDRAM - DDR2 | 1Gb (128M x 8) | Parallel | 333MHz | 15ns | 450ps | 1.7 V ~ 1.9 V | -40°C ~ 105°C | Surface Mount | 60-TFBGA | 60-TWBGA (8x10.5) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 1G PARALLEL 60TWBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR2
- Memory Size: 1Gb (128M x 8)
- Memory Interface: Parallel
- Clock Frequency: 333MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 450ps
- Voltage - Supply: 1.7 V ~ 1.9 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 60-TFBGA
- Supplier Device Package: 60-TWBGA (8x10.5)
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Package: 60-TFBGA |
Stock5,376 |
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DRAM | SDRAM - DDR2 | 1Gb (128M x 8) | Parallel | 333MHz | 15ns | 450ps | 1.7 V ~ 1.9 V | -40°C ~ 85°C (TA) | Surface Mount | 60-TFBGA | 60-TWBGA (8x10.5) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 1G PARALLEL 60TWBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR2
- Memory Size: 1Gb (128M x 8)
- Memory Interface: Parallel
- Clock Frequency: 400MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 400ps
- Voltage - Supply: 1.7 V ~ 1.9 V
- Operating Temperature: -40°C ~ 105°C
- Mounting Type: Surface Mount
- Package / Case: 60-TFBGA
- Supplier Device Package: 60-TWBGA (8x10.5)
|
Package: 60-TFBGA |
Stock2,224 |
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DRAM | SDRAM - DDR2 | 1Gb (128M x 8) | Parallel | 400MHz | 15ns | 400ps | 1.7 V ~ 1.9 V | -40°C ~ 105°C | Surface Mount | 60-TFBGA | 60-TWBGA (8x10.5) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 1G PARALLEL 60TWBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR2
- Memory Size: 1Gb (128M x 8)
- Memory Interface: Parallel
- Clock Frequency: 400MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 400ps
- Voltage - Supply: 1.7 V ~ 1.9 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 60-TFBGA
- Supplier Device Package: 60-TWBGA (8x10.5)
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Package: 60-TFBGA |
Stock6,464 |
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DRAM | SDRAM - DDR2 | 1Gb (128M x 8) | Parallel | 400MHz | 15ns | 400ps | 1.7 V ~ 1.9 V | -40°C ~ 85°C (TA) | Surface Mount | 60-TFBGA | 60-TWBGA (8x10.5) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 2G PARALLEL 96TWBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3
- Memory Size: 2Gb (128M x 16)
- Memory Interface: Parallel
- Clock Frequency: 933MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 195ps
- Voltage - Supply: 1.425 V ~ 1.575 V
- Operating Temperature: 0°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 96-TFBGA
- Supplier Device Package: 96-TWBGA (9x13)
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Package: 96-TFBGA |
Stock5,536 |
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DRAM | SDRAM - DDR3 | 2Gb (128M x 16) | Parallel | 933MHz | 15ns | 195ps | 1.425 V ~ 1.575 V | 0°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-TWBGA (9x13) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 2G PARALLEL 96TWBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3
- Memory Size: 2Gb (128M x 16)
- Memory Interface: Parallel
- Clock Frequency: 933MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 195ps
- Voltage - Supply: 1.425 V ~ 1.575 V
- Operating Temperature: -40°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 96-TFBGA
- Supplier Device Package: 96-TWBGA (9x13)
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Package: 96-TFBGA |
Stock7,872 |
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DRAM | SDRAM - DDR3 | 2Gb (128M x 16) | Parallel | 933MHz | 15ns | 195ps | 1.425 V ~ 1.575 V | -40°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-TWBGA (9x13) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 2G PARALLEL 96TWBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3
- Memory Size: 2Gb (128M x 16)
- Memory Interface: Parallel
- Clock Frequency: 933MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 195ps
- Voltage - Supply: 1.425 V ~ 1.575 V
- Operating Temperature: 0°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 96-TFBGA
- Supplier Device Package: 96-TWBGA (9x13)
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Package: 96-TFBGA |
Stock3,952 |
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DRAM | SDRAM - DDR3 | 2Gb (128M x 16) | Parallel | 933MHz | 15ns | 195ps | 1.425 V ~ 1.575 V | 0°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-TWBGA (9x13) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 2G PARALLEL 96TWBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3
- Memory Size: 2Gb (128M x 16)
- Memory Interface: Parallel
- Clock Frequency: 933MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 195ps
- Voltage - Supply: 1.425 V ~ 1.575 V
- Operating Temperature: -40°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 96-TFBGA
- Supplier Device Package: 96-TWBGA (9x13)
|
Package: 96-TFBGA |
Stock7,216 |
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DRAM | SDRAM - DDR3 | 2Gb (128M x 16) | Parallel | 933MHz | 15ns | 195ps | 1.425 V ~ 1.575 V | -40°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-TWBGA (9x13) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 144LFBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR
- Memory Size: 256Mb (8M x 32)
- Memory Interface: Parallel
- Clock Frequency: 200MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 700ps
- Voltage - Supply: 2.3 V ~ 2.7 V
- Operating Temperature: 0°C ~ 70°C
- Mounting Type: Surface Mount
- Package / Case: 144-LFBGA
- Supplier Device Package: 144-LFBGA (12x12)
|
Package: 144-LFBGA |
Stock4,672 |
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DRAM | SDRAM - DDR | 256Mb (8M x 32) | Parallel | 200MHz | 15ns | 700ps | 2.3 V ~ 2.7 V | 0°C ~ 70°C | Surface Mount | 144-LFBGA | 144-LFBGA (12x12) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 144LFBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR
- Memory Size: 256Mb (8M x 32)
- Memory Interface: Parallel
- Clock Frequency: 200MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 700ps
- Voltage - Supply: 2.3 V ~ 2.7 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 144-LFBGA
- Supplier Device Package: 144-LFBGA (12x12)
|
Package: 144-LFBGA |
Stock4,288 |
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DRAM | SDRAM - DDR | 256Mb (8M x 32) | Parallel | 200MHz | 15ns | 700ps | 2.3 V ~ 2.7 V | -40°C ~ 85°C (TA) | Surface Mount | 144-LFBGA | 144-LFBGA (12x12) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 128M PARALLEL 144LFBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR
- Memory Size: 128Mb (4M x 32)
- Memory Interface: Parallel
- Clock Frequency: 250MHz
- Write Cycle Time - Word, Page: 16ns
- Access Time: 700ps
- Voltage - Supply: 2.4 V ~ 2.6 V
- Operating Temperature: 0°C ~ 70°C
- Mounting Type: Surface Mount
- Package / Case: 144-LFBGA
- Supplier Device Package: 144-LFBGA (12x12)
|
Package: 144-LFBGA |
Stock2,944 |
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DRAM | SDRAM - DDR | 128Mb (4M x 32) | Parallel | 250MHz | 16ns | 700ps | 2.4 V ~ 2.6 V | 0°C ~ 70°C | Surface Mount | 144-LFBGA | 144-LFBGA (12x12) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 60TFBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR
- Memory Size: 512M (32M x 16)
- Memory Interface: Parallel
- Clock Frequency: 166MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 700ps
- Voltage - Supply: 2.3 V ~ 2.7 V
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 60-TFBGA
- Supplier Device Package: 60-TFBGA (13x8)
|
Package: 60-TFBGA |
Stock3,360 |
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DRAM | SDRAM - DDR | 512M (32M x 16) | Parallel | 166MHz | 15ns | 700ps | 2.3 V ~ 2.7 V | -40°C ~ 85°C | Surface Mount | 60-TFBGA | 60-TFBGA (13x8) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 60TFBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR
- Memory Size: 512M (32M x 16)
- Memory Interface: Parallel
- Clock Frequency: 166MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 700ps
- Voltage - Supply: 2.3 V ~ 2.7 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 60-TFBGA
- Supplier Device Package: 60-TFBGA (13x8)
|
Package: 60-TFBGA |
Stock19,116 |
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DRAM | SDRAM - DDR | 512M (32M x 16) | Parallel | 166MHz | 15ns | 700ps | 2.3 V ~ 2.7 V | -40°C ~ 85°C (TA) | Surface Mount | 60-TFBGA | 60-TFBGA (13x8) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 60TFBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR
- Memory Size: 256Mb (16M x 16)
- Memory Interface: Parallel
- Clock Frequency: 166MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 700ps
- Voltage - Supply: 2.3 V ~ 2.7 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 60-TFBGA
- Supplier Device Package: 60-TFBGA (13x8)
|
Package: 60-TFBGA |
Stock4,896 |
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DRAM | SDRAM - DDR | 256Mb (16M x 16) | Parallel | 166MHz | 15ns | 700ps | 2.3 V ~ 2.7 V | -40°C ~ 85°C (TA) | Surface Mount | 60-TFBGA | 60-TFBGA (13x8) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 4G PARALLEL 96TWBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR4
- Memory Size: 4Gb (256M x 16)
- Memory Interface: Parallel
- Clock Frequency: 1.066GHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: -
- Voltage - Supply: 1.14 V ~ 1.26 V
- Operating Temperature: 0°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 96-TFBGA
- Supplier Device Package: 96-TWBGA (9x13)
|
Package: 96-TFBGA |
Stock3,600 |
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DRAM | SDRAM - DDR4 | 4Gb (256M x 16) | Parallel | 1.066GHz | 15ns | - | 1.14 V ~ 1.26 V | 0°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-TWBGA (9x13) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 4G PARALLEL 96TWBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR4
- Memory Size: 4Gb (256M x 16)
- Memory Interface: Parallel
- Clock Frequency: 1.066GHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: -
- Voltage - Supply: 1.14 V ~ 1.26 V
- Operating Temperature: -40°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 96-TFBGA
- Supplier Device Package: 96-TWBGA (9x13)
|
Package: 96-TFBGA |
Stock7,056 |
|
DRAM | SDRAM - DDR4 | 4Gb (256M x 16) | Parallel | 1.066GHz | 15ns | - | 1.14 V ~ 1.26 V | -40°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-TWBGA (9x13) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 4G PARALLEL 96TWBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR4
- Memory Size: 4Gb (256M x 16)
- Memory Interface: Parallel
- Clock Frequency: 1.2GHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: -
- Voltage - Supply: 1.14 V ~ 1.26 V
- Operating Temperature: 0°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 96-TFBGA
- Supplier Device Package: 96-TWBGA (9x13)
|
Package: 96-TFBGA |
Stock6,672 |
|
DRAM | SDRAM - DDR4 | 4Gb (256M x 16) | Parallel | 1.2GHz | 15ns | - | 1.14 V ~ 1.26 V | 0°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-TWBGA (9x13) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 4G PARALLEL 96TWBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR4
- Memory Size: 4Gb (256M x 16)
- Memory Interface: Parallel
- Clock Frequency: 1.2GHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: -
- Voltage - Supply: 1.14 V ~ 1.26 V
- Operating Temperature: -40°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 96-TFBGA
- Supplier Device Package: 96-TWBGA (9x13)
|
Package: 96-TFBGA |
Stock4,096 |
|
DRAM | SDRAM - DDR4 | 4Gb (256M x 16) | Parallel | 1.2GHz | 15ns | - | 1.14 V ~ 1.26 V | -40°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-TWBGA (9x13) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 1G PARALLEL 90LFBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR
- Memory Size: 1Gb (32M x 32)
- Memory Interface: Parallel
- Clock Frequency: 200MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: -
- Voltage - Supply: 1.7 V ~ 1.95 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 90-LFBGA
- Supplier Device Package: 90-LFBGA (8x13)
|
Package: 90-LFBGA |
Stock7,200 |
|
DRAM | SDRAM - Mobile LPDDR | 1Gb (32M x 32) | Parallel | 200MHz | 15ns | - | 1.7 V ~ 1.95 V | 0°C ~ 70°C (TA) | Surface Mount | 90-LFBGA | 90-LFBGA (8x13) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 1G PARALLEL 90LFBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR
- Memory Size: 1Gb (32M x 32)
- Memory Interface: Parallel
- Clock Frequency: 200MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: -
- Voltage - Supply: 1.7 V ~ 1.95 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 90-LFBGA
- Supplier Device Package: 90-LFBGA (8x13)
|
Package: 90-LFBGA |
Stock4,944 |
|
DRAM | SDRAM - Mobile LPDDR | 1Gb (32M x 32) | Parallel | 200MHz | 15ns | - | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | Surface Mount | 90-LFBGA | 90-LFBGA (8x13) |