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ISSI, Integrated Silicon Solution Inc |
256Mb, OctalRAM, 32Mbx8, 3.0V, 1
- Memory Type: Volatile
- Memory Format: PSRAM
- Technology: PSRAM (Pseudo SRAM)
- Memory Size: 256Mbit
- Memory Interface: SPI - Octal I/O
- Clock Frequency: 133 MHz
- Write Cycle Time - Word, Page: 37.5ns
- Access Time: -
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 24-TBGA
- Supplier Device Package: 24-TFBGA (6x8)
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PSRAM | PSRAM (Pseudo SRAM) | 256Mbit | SPI - Octal I/O | 133 MHz | 37.5ns | - | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 24-TBGA | 24-TFBGA (6x8) |
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ISSI, Integrated Silicon Solution Inc |
IC FLASH 256GBIT EMMC 100LFBGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND (TLC)
- Memory Size: 256Gbit
- Memory Interface: eMMC_5.1
- Clock Frequency: 200 MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LBGA
- Supplier Device Package: 100-LFBGA (14x18)
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FLASH | FLASH - NAND (TLC) | 256Gbit | eMMC_5.1 | 200 MHz | - | - | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 100-LBGA | 100-LFBGA (14x18) |
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ISSI, Integrated Silicon Solution Inc |
16Mb,High-Speed,Async,1Mbx16, 20
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 16Mbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 20ns
- Access Time: 20 ns
- Voltage - Supply: 1.65V ~ 2.2V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-TFBGA
- Supplier Device Package: 48-TFBGA (6x8)
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SRAM | SRAM - Asynchronous | 16Mbit | Parallel | - | 20ns | 20 ns | 1.65V ~ 2.2V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFBGA | 48-TFBGA (6x8) |
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ISSI, Integrated Silicon Solution Inc |
IC FLASH 512GBIT EMMC 100LFBGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND (TLC)
- Memory Size: 512Gbit
- Memory Interface: eMMC_5.1
- Clock Frequency: 200 MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LBGA
- Supplier Device Package: 100-LFBGA (14x18)
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FLASH | FLASH - NAND (TLC) | 512Gbit | eMMC_5.1 | 200 MHz | - | - | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 100-LBGA | 100-LFBGA (14x18) |
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ISSI, Integrated Silicon Solution Inc |
128Mb QPI/QSPI, 8-pin WSON 6X8MM
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR (SLC)
- Memory Size: 128Mbit
- Memory Interface: SPI - Quad I/O, QPI, DTR
- Clock Frequency: 166 MHz
- Write Cycle Time - Word, Page: 40µs, 800µs
- Access Time: -
- Voltage - Supply: 1.65V ~ 1.95V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-WDFN Exposed Pad
- Supplier Device Package: 8-WSON (8x6)
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FLASH | FLASH - NOR (SLC) | 128Mbit | SPI - Quad I/O, QPI, DTR | 166 MHz | 40µs, 800µs | - | 1.65V ~ 1.95V | -40°C ~ 105°C (TA) | Surface Mount | 8-WDFN Exposed Pad | 8-WSON (8x6) |
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ISSI, Integrated Silicon Solution Inc |
IC FLASH 128GBIT EMMC 153VFBGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND (MLC)
- Memory Size: 128Gbit
- Memory Interface: eMMC
- Clock Frequency: 200 MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 153-VFBGA
- Supplier Device Package: 153-VFBGA (11.5x13)
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FLASH | FLASH - NAND (MLC) | 128Gbit | eMMC | 200 MHz | - | - | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 153-VFBGA | 153-VFBGA (11.5x13) |
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ISSI, Integrated Silicon Solution Inc |
512M, 2.5V, DDR, 64Mx8, 200MHz,
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR
- Memory Size: 512Mbit
- Memory Interface: SSTL_2
- Clock Frequency: 200 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 700 ps
- Voltage - Supply: 2.3V ~ 2.7V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 66-TSSOP (0.400", 10.16mm Width)
- Supplier Device Package: 66-TSOP II
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DRAM | SDRAM - DDR | 512Mbit | SSTL_2 | 200 MHz | 15ns | 700 ps | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Surface Mount | 66-TSSOP (0.400", 10.16mm Width) | 66-TSOP II |
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ISSI, Integrated Silicon Solution Inc |
512Mb QPI/QSPI, 24-ball TFBGA 6x
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR (SLC)
- Memory Size: 512Mbit
- Memory Interface: SPI - Quad I/O, QPI, DTR
- Clock Frequency: 112 MHz
- Write Cycle Time - Word, Page: 50µs, 1ms
- Access Time: 7.5 ns
- Voltage - Supply: 1.7V ~ 1.95V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 24-TBGA
- Supplier Device Package: 24-TFBGA (6x8)
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FLASH | FLASH - NOR (SLC) | 512Mbit | SPI - Quad I/O, QPI, DTR | 112 MHz | 50µs, 1ms | 7.5 ns | 1.7V ~ 1.95V | -40°C ~ 125°C (TA) | Surface Mount | 24-TBGA | 24-TFBGA (6x8) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 128MBIT PAR 54TSOP II
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 128Mbit
- Memory Interface: LVTTL
- Clock Frequency: 143 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 5.4 ns
- Voltage - Supply: 3V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 54-TSOP II
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DRAM | SDRAM | 128Mbit | LVTTL | 143 MHz | - | 5.4 ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP II |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 4GBIT HSUL 12 168VFBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR2-S4
- Memory Size: 4Gbit
- Memory Interface: HSUL_12
- Clock Frequency: 400 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 5.5 ns
- Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
- Operating Temperature: -40°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 168-VFBGA
- Supplier Device Package: 168-VFBGA (12x12)
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DRAM | SDRAM - Mobile LPDDR2-S4 | 4Gbit | HSUL_12 | 400 MHz | 15ns | 5.5 ns | 1.14V ~ 1.3V, 1.7V ~ 1.95V | -40°C ~ 85°C (TC) | Surface Mount | 168-VFBGA | 168-VFBGA (12x12) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 4GBIT HSUL 12 168VFBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR2-S4
- Memory Size: 4Gbit
- Memory Interface: HSUL_12
- Clock Frequency: 400 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 5.5 ns
- Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
- Operating Temperature: -40°C ~ 105°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 168-VFBGA
- Supplier Device Package: 168-VFBGA (12x12)
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DRAM | SDRAM - Mobile LPDDR2-S4 | 4Gbit | HSUL_12 | 400 MHz | 15ns | 5.5 ns | 1.14V ~ 1.3V, 1.7V ~ 1.95V | -40°C ~ 105°C (TC) | Surface Mount | 168-VFBGA | 168-VFBGA (12x12) |
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ISSI, Integrated Silicon Solution Inc |
IC FLASH 256MBIT SPI/QUAD 16SOIC
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 256Mbit
- Memory Interface: SPI - Quad I/O, QPI, DTR
- Clock Frequency: 166 MHz
- Write Cycle Time - Word, Page: 50µs, 1ms
- Access Time: -
- Voltage - Supply: 2.3V ~ 3.6V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 16-SOIC
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FLASH | FLASH - NOR | 256Mbit | SPI - Quad I/O, QPI, DTR | 166 MHz | 50µs, 1ms | - | 2.3V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 128MBIT PAR 54TFBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 128Mbit
- Memory Interface: LVTTL
- Clock Frequency: 166 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 5.4 ns
- Voltage - Supply: 3V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-TFBGA
- Supplier Device Package: 54-TFBGA (8x8)
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DRAM | SDRAM | 128Mbit | LVTTL | 166 MHz | - | 5.4 ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 54-TFBGA | 54-TFBGA (8x8) |
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ISSI, Integrated Silicon Solution Inc |
8Mb,High-Speed/Low Power,Async w
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 8Mbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 10ns
- Access Time: 10 ns
- Voltage - Supply: 2.4V ~ 3.6V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 44-TSOP II
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SRAM | SRAM - Asynchronous | 8Mbit | Parallel | - | 10ns | 10 ns | 2.4V ~ 3.6V | -40°C ~ 125°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP II |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 256MBIT PAR 54TSOP II
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 256Mbit
- Memory Interface: LVTTL
- Clock Frequency: 166 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 5.4 ns
- Voltage - Supply: 3V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 54-TSOP II
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DRAM | SDRAM | 256Mbit | LVTTL | 166 MHz | - | 5.4 ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP II |
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ISSI, Integrated Silicon Solution Inc |
4G, 1.2V, DDR4, 512Mx8, 2666MT/s
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR4
- Memory Size: 4Gbit
- Memory Interface: POD
- Clock Frequency: 1.333 GHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 19 ns
- Voltage - Supply: 1.14V ~ 1.26V
- Operating Temperature: -40°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 78-TFBGA
- Supplier Device Package: 78-TWBGA (10x14)
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DRAM | SDRAM - DDR4 | 4Gbit | POD | 1.333 GHz | 15ns | 19 ns | 1.14V ~ 1.26V | -40°C ~ 95°C (TC) | Surface Mount | 78-TFBGA | 78-TWBGA (10x14) |
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ISSI, Integrated Silicon Solution Inc |
1Gbit (x16, 4 bit ECC), 63 Ball
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND (SLC)
- Memory Size: 1Gbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 45ns
- Access Time: 30 ns
- Voltage - Supply: 1.7V ~ 1.95V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 63-VFBGA
- Supplier Device Package: 63-VFBGA (9x11)
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FLASH | FLASH - NAND (SLC) | 1Gbit | Parallel | - | 45ns | 30 ns | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Surface Mount | 63-VFBGA | 63-VFBGA (9x11) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 4GBIT PARALLEL 200VFBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR4
- Memory Size: 4Gbit
- Memory Interface: Parallel
- Clock Frequency: 1.6 GHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
- Operating Temperature: -40°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 200-WFBGA
- Supplier Device Package: 200-VFBGA (10x14.5)
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DRAM | SDRAM - Mobile LPDDR4 | 4Gbit | Parallel | 1.6 GHz | - | - | 1.06V ~ 1.17V, 1.7V ~ 1.95V | -40°C ~ 95°C (TC) | Surface Mount | 200-WFBGA | 200-VFBGA (10x14.5) |
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ISSI, Integrated Silicon Solution Inc |
IC FLASH 4MBIT SPI/QUAD 8SOP
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 4Mbit
- Memory Interface: SPI - Quad I/O, QPI, DTR
- Clock Frequency: 104 MHz
- Write Cycle Time - Word, Page: 1.2ms
- Access Time: 8 ns
- Voltage - Supply: 1.7V ~ 1.95V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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FLASH | FLASH - NOR | 4Mbit | SPI - Quad I/O, QPI, DTR | 104 MHz | 1.2ms | 8 ns | 1.7V ~ 1.95V | -40°C ~ 105°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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ISSI, Integrated Silicon Solution Inc |
Automotive (Tc: -40 to +95C), 4G
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3L
- Memory Size: 4Gbit
- Memory Interface: Parallel
- Clock Frequency: 800 MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 96-TFBGA
- Supplier Device Package: 96-TWBGA (9x13)
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DRAM | SDRAM - DDR3L | 4Gbit | Parallel | 800 MHz | - | - | - | -40°C ~ 85°C | Surface Mount | 96-TFBGA | 96-TWBGA (9x13) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 576MBIT PAR 168FCBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: RLDRAM 3
- Memory Size: 576Mbit
- Memory Interface: Parallel
- Clock Frequency: 933 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 7.5 ns
- Voltage - Supply: 1.28V ~ 1.42V
- Operating Temperature: -40°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 168-LBGA
- Supplier Device Package: 168-FBGA (13.5x13.5)
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DRAM | RLDRAM 3 | 576Mbit | Parallel | 933 MHz | - | 7.5 ns | 1.28V ~ 1.42V | -40°C ~ 95°C (TC) | Surface Mount | 168-LBGA | 168-FBGA (13.5x13.5) |
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ISSI, Integrated Silicon Solution Inc |
IC FLASH 128GBIT EMMC 100LFBGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND (MLC)
- Memory Size: 128Gbit
- Memory Interface: eMMC
- Clock Frequency: 200 MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LBGA
- Supplier Device Package: 100-LFBGA (14x18)
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FLASH | FLASH - NAND (MLC) | 128Gbit | eMMC | 200 MHz | - | - | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 100-LBGA | 100-LFBGA (14x18) |
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ISSI, Integrated Silicon Solution Inc |
IC FLASH 64GBIT EMMC 100LFBGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND (TLC)
- Memory Size: 64Gbit
- Memory Interface: eMMC_5.1
- Clock Frequency: 200 MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 100-LBGA
- Supplier Device Package: 100-LFBGA (14x18)
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Package: - |
Stock198 |
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FLASH | FLASH - NAND (TLC) | 64Gbit | eMMC_5.1 | 200 MHz | - | - | 2.7V ~ 3.6V | -40°C ~ 85°C (TC) | Surface Mount | 100-LBGA | 100-LFBGA (14x18) |
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ISSI, Integrated Silicon Solution Inc |
2Mb QSPI, 8-pin SOP 208Mil, RoHS
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR (SLC)
- Memory Size: 2Mbit
- Memory Interface: SPI - Quad I/O
- Clock Frequency: 104 MHz
- Write Cycle Time - Word, Page: 25µs, 1ms
- Access Time: 8 ns
- Voltage - Supply: 1.65V ~ 1.95V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.209", 5.30mm Width)
- Supplier Device Package: 8-SOIC
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FLASH | FLASH - NOR (SLC) | 2Mbit | SPI - Quad I/O | 104 MHz | 25µs, 1ms | 8 ns | 1.65V ~ 1.95V | -40°C ~ 105°C (TA) | Surface Mount | 8-SOIC (0.209", 5.30mm Width) | 8-SOIC |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 4GBIT PARALLEL 96TWBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3L
- Memory Size: 4Gbit
- Memory Interface: Parallel
- Clock Frequency: 800 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 20 ns
- Voltage - Supply: 1.283V ~ 1.45V
- Operating Temperature: -40°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 96-TFBGA
- Supplier Device Package: 96-TWBGA (9x13)
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DRAM | SDRAM - DDR3L | 4Gbit | Parallel | 800 MHz | 15ns | 20 ns | 1.283V ~ 1.45V | -40°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-TWBGA (9x13) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 4GBIT PARALLEL 96TWBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3L
- Memory Size: 4Gbit
- Memory Interface: Parallel
- Clock Frequency: 800 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 20 ns
- Voltage - Supply: 1.283V ~ 1.45V
- Operating Temperature: -40°C ~ 105°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 96-TFBGA
- Supplier Device Package: 96-TWBGA (9x13)
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DRAM | SDRAM - DDR3L | 4Gbit | Parallel | 800 MHz | 15ns | 20 ns | 1.283V ~ 1.45V | -40°C ~ 105°C (TC) | Surface Mount | 96-TFBGA | 96-TWBGA (9x13) |
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ISSI, Integrated Silicon Solution Inc |
2Mb, Low Power/Power Saver,Async
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 2Mbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 45ns
- Access Time: 45 ns
- Voltage - Supply: 2.2V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 32-TFSOP (0.724", 18.40mm Width)
- Supplier Device Package: 32-TSOP I
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SRAM | SRAM - Asynchronous | 2Mbit | Parallel | - | 45ns | 45 ns | 2.2V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 32-TFSOP (0.724", 18.40mm Width) | 32-TSOP I |
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ISSI, Integrated Silicon Solution Inc |
256Mb, 64 Ball BGA(11X13mm), 3V,
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR (SLC)
- Memory Size: 256Mbit
- Memory Interface: CFI
- Clock Frequency: -
- Write Cycle Time - Word, Page: 70ns, 200µs
- Access Time: 70 ns
- Voltage - Supply: 3V ~ 3.6V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 64-LBGA
- Supplier Device Package: 64-LFBGA (11x13)
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FLASH | FLASH - NOR (SLC) | 256Mbit | CFI | - | 70ns, 200µs | 70 ns | 3V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 64-LBGA | 64-LFBGA (11x13) |