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ISSI, Integrated Silicon Solution Inc |
IC DRAM 2G PARALLEL 400MHZ
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR2-S4
- Memory Size: 2Gb (128M x 16)
- Memory Interface: Parallel
- Clock Frequency: 400MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: -
- Voltage - Supply: 1.14 V ~ 1.95 V
- Operating Temperature: -40°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 134-TFBGA
- Supplier Device Package: 134-TFBGA (10x11.5)
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Package: 134-TFBGA |
Stock5,040 |
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DRAM | SDRAM - Mobile LPDDR2-S4 | 2Gb (128M x 16) | Parallel | 400MHz | 15ns | - | 1.14 V ~ 1.95 V | -40°C ~ 85°C (TC) | Surface Mount | 134-TFBGA | 134-TFBGA (10x11.5) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 2G PARALLEL 400MHZ
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR2-S4
- Memory Size: 2Gb (64M x 32)
- Memory Interface: Parallel
- Clock Frequency: 400MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: -
- Voltage - Supply: 1.14 V ~ 1.95 V
- Operating Temperature: -40°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 168-VFBGA
- Supplier Device Package: 168-VFBGA (12x12)
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Package: 168-VFBGA |
Stock5,504 |
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DRAM | SDRAM - Mobile LPDDR2-S4 | 2Gb (64M x 32) | Parallel | 400MHz | 15ns | - | 1.14 V ~ 1.95 V | -40°C ~ 85°C (TC) | Surface Mount | 168-VFBGA | 168-VFBGA (12x12) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 2G PARALLEL 533MHZ
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR2-S4
- Memory Size: 2Gb (128M x 16)
- Memory Interface: Parallel
- Clock Frequency: 533MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: -
- Voltage - Supply: 1.14 V ~ 1.95 V
- Operating Temperature: -40°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 134-TFBGA
- Supplier Device Package: 134-TFBGA (10x11.5)
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Package: 134-TFBGA |
Stock5,248 |
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DRAM | SDRAM - Mobile LPDDR2-S4 | 2Gb (128M x 16) | Parallel | 533MHz | 15ns | - | 1.14 V ~ 1.95 V | -40°C ~ 85°C (TC) | Surface Mount | 134-TFBGA | 134-TFBGA (10x11.5) |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 8M PARALLEL 48MGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 8Mb (512K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 20ns
- Access Time: 20ns
- Voltage - Supply: 1.65 V ~ 2.2 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-TFBGA
- Supplier Device Package: 48-TFBGA (6x8)
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Package: 48-TFBGA |
Stock5,120 |
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SRAM | SRAM - Asynchronous | 8Mb (512K x 16) | Parallel | - | 20ns | 20ns | 1.65 V ~ 2.2 V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFBGA | 48-TFBGA (6x8) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 166MHZ
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR
- Memory Size: 512Mb (32M x 16)
- Memory Interface: Parallel
- Clock Frequency: 166MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 700ps
- Voltage - Supply: 2.3 V ~ 2.7 V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 66-TSSOP (0.400", 10.16mm Width)
- Supplier Device Package: 66-TSOP
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Package: 66-TSSOP (0.400", 10.16mm Width) |
Stock2,560 |
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DRAM | SDRAM - DDR | 512Mb (32M x 16) | Parallel | 166MHz | 15ns | 700ps | 2.3 V ~ 2.7 V | -40°C ~ 105°C (TA) | Surface Mount | 66-TSSOP (0.400", 10.16mm Width) | 66-TSOP |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 9M PARALLEL 200MHZ
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous
- Memory Size: 9Mb (512K x 18)
- Memory Interface: Parallel
- Clock Frequency: 200MHz
- Write Cycle Time - Word, Page: -
- Access Time: 3.1ns
- Voltage - Supply: 3.135 V ~ 3.465 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-LQFP (14x20)
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Package: 100-LQFP |
Stock2,512 |
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SRAM | SRAM - Synchronous | 9Mb (512K x 18) | Parallel | 200MHz | - | 3.1ns | 3.135 V ~ 3.465 V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-LQFP (14x20) |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 9M PARALLEL 200MHZ
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous
- Memory Size: 9Mb (256K x 36)
- Memory Interface: Parallel
- Clock Frequency: 200MHz
- Write Cycle Time - Word, Page: -
- Access Time: 3.1ns
- Voltage - Supply: 3.135 V ~ 3.465 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-LQFP (14x20)
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Package: 100-LQFP |
Stock7,328 |
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SRAM | SRAM - Synchronous | 9Mb (256K x 36) | Parallel | 200MHz | - | 3.1ns | 3.135 V ~ 3.465 V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-LQFP (14x20) |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 9M PARALLEL 117MHZ
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous
- Memory Size: 9Mb (512K x 18)
- Memory Interface: Parallel
- Clock Frequency: 117MHz
- Write Cycle Time - Word, Page: -
- Access Time: 7.5ns
- Voltage - Supply: 3.135 V ~ 3.465 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-LQFP (14x20)
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Package: 100-LQFP |
Stock2,368 |
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SRAM | SRAM - Synchronous | 9Mb (512K x 18) | Parallel | 117MHz | - | 7.5ns | 3.135 V ~ 3.465 V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-LQFP (14x20) |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 9M PARALLEL 117MHZ
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous
- Memory Size: 9Mb (256K x 36)
- Memory Interface: Parallel
- Clock Frequency: 117MHz
- Write Cycle Time - Word, Page: -
- Access Time: 7.5ns
- Voltage - Supply: 3.135 V ~ 3.465 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-LQFP (14x20)
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Package: 100-LQFP |
Stock2,512 |
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SRAM | SRAM - Synchronous | 9Mb (256K x 36) | Parallel | 117MHz | - | 7.5ns | 3.135 V ~ 3.465 V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-LQFP (14x20) |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 9M PARALLEL 100LQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous
- Memory Size: 9Mb (512K x 18)
- Memory Interface: Parallel
- Clock Frequency: 200MHz
- Write Cycle Time - Word, Page: -
- Access Time: 3.1ns
- Voltage - Supply: 3.135 V ~ 3.465 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-LQFP (14x20)
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Package: 100-LQFP |
Stock5,968 |
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SRAM | SRAM - Synchronous | 9Mb (512K x 18) | Parallel | 200MHz | - | 3.1ns | 3.135 V ~ 3.465 V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-LQFP (14x20) |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 9M PARALLEL 100LQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous
- Memory Size: 9Mb (256K x 36)
- Memory Interface: Parallel
- Clock Frequency: 200MHz
- Write Cycle Time - Word, Page: -
- Access Time: 3.1ns
- Voltage - Supply: 3.135 V ~ 3.465 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-LQFP (14x20)
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Package: 100-LQFP |
Stock3,568 |
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SRAM | SRAM - Synchronous | 9Mb (256K x 36) | Parallel | 200MHz | - | 3.1ns | 3.135 V ~ 3.465 V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-LQFP (14x20) |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 9M PARALLEL 100LQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous
- Memory Size: 9Mb (512K x 18)
- Memory Interface: Parallel
- Clock Frequency: 117MHz
- Write Cycle Time - Word, Page: -
- Access Time: 7.5ns
- Voltage - Supply: 3.135 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-LQFP (14x20)
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Package: 100-LQFP |
Stock3,744 |
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SRAM | SRAM - Synchronous | 9Mb (512K x 18) | Parallel | 117MHz | - | 7.5ns | 3.135 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-LQFP (14x20) |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 9M PARALLEL 117MHZ
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous
- Memory Size: 9Mb (256K x 36)
- Memory Interface: Parallel
- Clock Frequency: 117MHz
- Write Cycle Time - Word, Page: -
- Access Time: 7.5ns
- Voltage - Supply: 3.135 V ~ 3.465 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-LQFP (14x20)
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Package: 100-LQFP |
Stock4,800 |
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SRAM | SRAM - Synchronous | 9Mb (256K x 36) | Parallel | 117MHz | - | 7.5ns | 3.135 V ~ 3.465 V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-LQFP (14x20) |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 9M PARALLEL 165TFBGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous
- Memory Size: 9Mb (256K x 36)
- Memory Interface: Parallel
- Clock Frequency: 200MHz
- Write Cycle Time - Word, Page: -
- Access Time: 3.1ns
- Voltage - Supply: 3.135 V ~ 3.465 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 165-TBGA
- Supplier Device Package: 165-TFBGA (13x15)
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Package: 165-TBGA |
Stock2,864 |
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SRAM | SRAM - Synchronous | 9Mb (256K x 36) | Parallel | 200MHz | - | 3.1ns | 3.135 V ~ 3.465 V | -40°C ~ 85°C (TA) | Surface Mount | 165-TBGA | 165-TFBGA (13x15) |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 16M PARALLEL 48TSOP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 16Mb (1M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 45ns
- Access Time: 45ns
- Voltage - Supply: 2.2 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-TFSOP (0.724", 18.40mm Width)
- Supplier Device Package: 48-TSOP I
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Package: 48-TFSOP (0.724", 18.40mm Width) |
Stock4,176 |
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SRAM | SRAM - Asynchronous | 16Mb (1M x 16) | Parallel | - | 45ns | 45ns | 2.2 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | 48-TSOP I |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 2G PARALLEL 533MHZ
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR2-S4
- Memory Size: 2Gb (64M x 32)
- Memory Interface: Parallel
- Clock Frequency: 533MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: -
- Voltage - Supply: 1.14 V ~ 1.95 V
- Operating Temperature: -40°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 134-TFBGA
- Supplier Device Package: 134-TFBGA (10x11.5)
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Package: 134-TFBGA |
Stock7,504 |
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DRAM | SDRAM - Mobile LPDDR2-S4 | 2Gb (64M x 32) | Parallel | 533MHz | 15ns | - | 1.14 V ~ 1.95 V | -40°C ~ 85°C (TC) | Surface Mount | 134-TFBGA | 134-TFBGA (10x11.5) |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 8M PARALLEL 48TFBGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 8Mb (512K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 10ns
- Access Time: 10ns
- Voltage - Supply: 2.4 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-TFBGA
- Supplier Device Package: 48-TFBGA (6x8)
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Package: 48-TFBGA |
Stock7,136 |
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SRAM | SRAM - Asynchronous | 8Mb (512K x 16) | Parallel | - | 10ns | 10ns | 2.4 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFBGA | 48-TFBGA (6x8) |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 8M PARALLEL 48TFBGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 8Mb (512K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 10ns
- Access Time: 10ns
- Voltage - Supply: 2.4 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-TFBGA
- Supplier Device Package: 48-TFBGA (6x8)
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Package: 48-TFBGA |
Stock5,104 |
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SRAM | SRAM - Asynchronous | 8Mb (512K x 16) | Parallel | - | 10ns | 10ns | 2.4 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFBGA | 48-TFBGA (6x8) |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 8M PARALLEL 44TSOP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 8Mb (512K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 20ns
- Access Time: 20ns
- Voltage - Supply: 1.65 V ~ 2.2 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 44-TSOP II
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Package: 44-TSOP (0.400", 10.16mm Width) |
Stock5,360 |
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SRAM | SRAM - Asynchronous | 8Mb (512K x 16) | Parallel | - | 20ns | 20ns | 1.65 V ~ 2.2 V | -40°C ~ 85°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP II |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 1G PARALLEL 533MHZ
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR2-S4
- Memory Size: 1Gb (32M x 32)
- Memory Interface: Parallel
- Clock Frequency: 533MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: -
- Voltage - Supply: 1.14 V ~ 1.95 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 134-TFBGA
- Supplier Device Package: 134-TFBGA (10x11.5)
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Package: 134-TFBGA |
Stock4,064 |
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DRAM | SDRAM - Mobile LPDDR2-S4 | 1Gb (32M x 32) | Parallel | 533MHz | 15ns | - | 1.14 V ~ 1.95 V | -40°C ~ 85°C (TA) | Surface Mount | 134-TFBGA | 134-TFBGA (10x11.5) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 1G PARALLEL 800MHZ
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3
- Memory Size: 1Gb (64M x 16)
- Memory Interface: Parallel
- Clock Frequency: 800MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 20ns
- Voltage - Supply: 1.425 V ~ 1.575 V
- Operating Temperature: -40°C ~ 105°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 96-TFBGA
- Supplier Device Package: 96-TWBGA (9x13)
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Package: 96-TFBGA |
Stock4,704 |
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DRAM | SDRAM - DDR3 | 1Gb (64M x 16) | Parallel | 800MHz | 15ns | 20ns | 1.425 V ~ 1.575 V | -40°C ~ 105°C (TC) | Surface Mount | 96-TFBGA | 96-TWBGA (9x13) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 166MHZ
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR
- Memory Size: 512Mb (32M x 16)
- Memory Interface: Parallel
- Clock Frequency: 166MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 700ps
- Voltage - Supply: 2.3 V ~ 2.7 V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 60-TFBGA
- Supplier Device Package: 60-TFBGA (13x8)
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Package: 60-TFBGA |
Stock3,600 |
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DRAM | SDRAM - DDR | 512Mb (32M x 16) | Parallel | 166MHz | 15ns | 700ps | 2.3 V ~ 2.7 V | -40°C ~ 105°C (TA) | Surface Mount | 60-TFBGA | 60-TFBGA (13x8) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 2G PARALLEL 78TWBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3L
- Memory Size: 2Gb (256M x 8)
- Memory Interface: Parallel
- Clock Frequency: 800MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 20ns
- Voltage - Supply: 1.283 V ~ 1.45 V
- Operating Temperature: -40°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 78-TFBGA
- Supplier Device Package: 78-TWBGA (8x10.5)
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Package: 78-TFBGA |
Stock6,976 |
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DRAM | SDRAM - DDR3L | 2Gb (256M x 8) | Parallel | 800MHz | 15ns | 20ns | 1.283 V ~ 1.45 V | -40°C ~ 95°C (TC) | Surface Mount | 78-TFBGA | 78-TWBGA (8x10.5) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 2G PARALLEL 400MHZ
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR2-S4
- Memory Size: 2Gb (128M x 16)
- Memory Interface: Parallel
- Clock Frequency: 400MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: -
- Voltage - Supply: 1.14 V ~ 1.95 V
- Operating Temperature: -40°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 134-TFBGA
- Supplier Device Package: 134-TFBGA (10x11.5)
|
Package: 134-TFBGA |
Stock7,456 |
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DRAM | SDRAM - Mobile LPDDR2-S4 | 2Gb (128M x 16) | Parallel | 400MHz | 15ns | - | 1.14 V ~ 1.95 V | -40°C ~ 85°C (TC) | Surface Mount | 134-TFBGA | 134-TFBGA (10x11.5) |
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ISSI, Integrated Silicon Solution Inc |
IC FLASH 4G PARALLEL 48TSOP I
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND (SLC)
- Memory Size: 4Gb (512M x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 25ns
- Access Time: 25ns
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 48-TFSOP (0.724", 18.40mm Width)
- Supplier Device Package: 48-TSOP I
|
Package: 48-TFSOP (0.724", 18.40mm Width) |
Stock5,856 |
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FLASH | FLASH - NAND (SLC) | 4Gb (512M x 8) | Parallel | - | 25ns | 25ns | 2.7 V ~ 3.6 V | -40°C ~ 85°C | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | 48-TSOP I |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 400MHZ
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR2-S4
- Memory Size: 512Mb (16M x 32)
- Memory Interface: Parallel
- Clock Frequency: 400MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: -
- Voltage - Supply: 1.14 V ~ 1.95 V
- Operating Temperature: -40°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 134-TFBGA
- Supplier Device Package: 134-TFBGA (10x11.5)
|
Package: 134-TFBGA |
Stock7,264 |
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DRAM | SDRAM - Mobile LPDDR2-S4 | 512Mb (16M x 32) | Parallel | 400MHz | 15ns | - | 1.14 V ~ 1.95 V | -40°C ~ 85°C (TC) | Surface Mount | 134-TFBGA | 134-TFBGA (10x11.5) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 1G PARALLEL 533MHZ
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR2-S4
- Memory Size: 1Gb (64M x 16)
- Memory Interface: Parallel
- Clock Frequency: 533MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: -
- Voltage - Supply: 1.14 V ~ 1.95 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 134-TFBGA
- Supplier Device Package: 134-TFBGA (10x11.5)
|
Package: 134-TFBGA |
Stock4,208 |
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DRAM | SDRAM - Mobile LPDDR2-S4 | 1Gb (64M x 16) | Parallel | 533MHz | 15ns | - | 1.14 V ~ 1.95 V | -40°C ~ 85°C (TA) | Surface Mount | 134-TFBGA | 134-TFBGA (10x11.5) |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 16M PARALLEL 48MGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 16Mb (1M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 55ns
- Access Time: 55ns
- Voltage - Supply: 1.65 V ~ 1.98 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-VFBGA
- Supplier Device Package: 48-VFBGA (6x8)
|
Package: 48-VFBGA |
Stock4,064 |
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SRAM | SRAM - Asynchronous | 16Mb (1M x 16) | Parallel | - | 55ns | 55ns | 1.65 V ~ 1.98 V | -40°C ~ 85°C (TA) | Surface Mount | 48-VFBGA | 48-VFBGA (6x8) |