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ISSI, Integrated Silicon Solution Inc |
IC LED DRIVER 8CH CC 90MA 16QFN
- Type: Linear
- Topology: -
- Internal Switch(s): Yes
- Number of Outputs: 8
- Voltage - Supply (Min): 2.7V
- Voltage - Supply (Max): 5.5V
- Voltage - Output: -
- Current - Output / Channel: 90mA
- Frequency: -
- Dimming: PWM
- Applications: Backlight
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 16-WFQFN Exposed Pad
- Supplier Device Package: 16-QFN (3x3)
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Package: 16-WFQFN Exposed Pad |
Stock7,344 |
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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 256MBIT 125MHZ 54BGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile
- Memory Size: 256Mb (16M x 16)
- Memory Interface: Parallel
- Clock Frequency: 125MHz
- Write Cycle Time - Word, Page: -
- Access Time: 6ns
- Voltage - Supply: 1.7 V ~ 1.95 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-TFBGA
- Supplier Device Package: 54-TFBGA (8x13)
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Package: 54-TFBGA |
Stock7,520 |
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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 32MBIT 133MHZ 54BGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile
- Memory Size: 32Mb (2M x 16)
- Memory Interface: Parallel
- Clock Frequency: 133MHz
- Write Cycle Time - Word, Page: -
- Access Time: 6ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-TFBGA
- Supplier Device Package: 54-TFBGA (8x8)
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Package: 54-TFBGA |
Stock4,544 |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 4MBIT 45NS 48VFBGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 4Mb (256K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 45ns
- Access Time: 45ns
- Voltage - Supply: 2.5 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-TFBGA
- Supplier Device Package: 48-TFBGA (6x8)
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Package: 48-TFBGA |
Stock7,860 |
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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 256MBIT 166MHZ 90BGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile DDR
- Memory Size: 256Mb (8M x 32)
- Memory Interface: Parallel
- Clock Frequency: 166MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 5.5ns
- Voltage - Supply: 1.7 V ~ 1.95 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 90-TFBGA
- Supplier Device Package: 90-TFBGA (8x13)
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Package: 90-TFBGA |
Stock4,912 |
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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 16MBIT 166MHZ 50TSOP
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 16Mb (1M x 16)
- Memory Interface: Parallel
- Clock Frequency: 166MHz
- Write Cycle Time - Word, Page: -
- Access Time: 5.5ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 50-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 50-TSOP II
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Package: 50-TSOP (0.400", 10.16mm Width) |
Stock5,696 |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 4MBIT 10NS 36SOJ
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 4Mb (512K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 10ns
- Access Time: 10ns
- Voltage - Supply: 3.135 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 36-BSOJ (0.400", 10.16mm Width)
- Supplier Device Package: 36-SOJ
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Package: 36-BSOJ (0.400", 10.16mm Width) |
Stock5,408 |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 576MBIT 800MHZ 168BGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: DRAM
- Memory Size: 576Mb (16M x 36)
- Memory Interface: Parallel
- Clock Frequency: 800MHz
- Write Cycle Time - Word, Page: -
- Access Time: 12ns
- Voltage - Supply: 1.28 V ~ 1.42 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 168-LBGA
- Supplier Device Package: 168-FC(LF)BGA (13.5x13.5)
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Package: 168-LBGA |
Stock7,168 |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 36MBIT 200MHZ 100LQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous
- Memory Size: 36Mb (2M x 18)
- Memory Interface: Parallel
- Clock Frequency: 200MHz
- Write Cycle Time - Word, Page: -
- Access Time: 3.1ns
- Voltage - Supply: 2.375 V ~ 2.625 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-LQFP (14x20)
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Package: 100-LQFP |
Stock5,088 |
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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 18MBIT 400MHZ 165BGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous, DDR IIP
- Memory Size: 18Mb (512K x 36)
- Memory Interface: Parallel
- Clock Frequency: 400MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.71 V ~ 1.89 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 165-LBGA
- Supplier Device Package: 165-LFBGA (15x17)
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Package: 165-LBGA |
Stock5,616 |
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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 512MBIT 167MHZ 86TSOP
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 512Mb (16M x 32)
- Memory Interface: Parallel
- Clock Frequency: 167MHz
- Write Cycle Time - Word, Page: -
- Access Time: 5.4ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 86-TFSOP (0.400", 10.16mm Width)
- Supplier Device Package: 86-TSOP II
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Package: 86-TFSOP (0.400", 10.16mm Width) |
Stock3,312 |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 8MBIT 10NS 90FBGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 8Mb (256K x 32)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 10ns
- Access Time: 10ns
- Voltage - Supply: 2.4 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 90-TFBGA
- Supplier Device Package: 90-TFBGA (8x13)
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Package: 90-TFBGA |
Stock5,520 |
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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 1GBIT 400MHZ 60BGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR2
- Memory Size: 1Gb (128M x 8)
- Memory Interface: Parallel
- Clock Frequency: 400MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 400ps
- Voltage - Supply: 1.7 V ~ 1.9 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 60-TFBGA
- Supplier Device Package: 60-TWBGA (10.5x8)
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Package: 60-TFBGA |
Stock6,144 |
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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 128MBIT 166MHZ 86TSOP
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 128Mb (4M x 32)
- Memory Interface: Parallel
- Clock Frequency: 166MHz
- Write Cycle Time - Word, Page: -
- Access Time: 5.4ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 86-TFSOP (0.400", 10.16mm Width)
- Supplier Device Package: 86-TSOP II
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Package: 86-TFSOP (0.400", 10.16mm Width) |
Stock3,072 |
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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 64MBIT 143MHZ 54TSOP
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 64Mb (4M x 16)
- Memory Interface: Parallel
- Clock Frequency: 143MHz
- Write Cycle Time - Word, Page: -
- Access Time: 5.4ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 54-TSOP II
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Package: 54-TSOP (0.400", 10.16mm Width) |
Stock4,064 |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 1MBIT 10NS 32SOIC
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 1Mb (128K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 10ns
- Access Time: 10ns
- Voltage - Supply: 2.4 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 32-BSOJ (0.400", 10.16mm Width)
- Supplier Device Package: 32-SOJ
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Package: 32-BSOJ (0.400", 10.16mm Width) |
Stock4,384 |
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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 64MBIT 143MHZ 54TSOP
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 64Mb (4M x 16)
- Memory Interface: Parallel
- Clock Frequency: 143MHz
- Write Cycle Time - Word, Page: -
- Access Time: 5.4ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 54-TSOP II
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Package: 54-TSOP (0.400", 10.16mm Width) |
Stock40,272 |
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ISSI, Integrated Silicon Solution Inc |
IC AUDIO PWR AMP 1.1W 8MSOP
- Type: Class AB
- Output Type: 1-Channel (Mono)
- Max Output Power x Channels @ Load: 1.15W x 1 @ 8 Ohm
- Voltage - Supply: 2.7 V ~ 5.5 V
- Features: Depop, Standby
- Mounting Type: Surface Mount
- Operating Temperature: -40°C ~ 85°C (TA)
- Supplier Device Package: 8-MSOP
- Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
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Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
Stock6,768 |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 36M PARALLEL 166MHZ
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous
- Memory Size: 36Mb (1M x 36)
- Memory Interface: Parallel
- Clock Frequency: 166MHz
- Write Cycle Time - Word, Page: -
- Access Time: 3.5ns
- Voltage - Supply: 2.375 V ~ 2.625 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 165-TBGA
- Supplier Device Package: 165-TFBGA (13x15)
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Package: 165-TBGA |
Stock2,640 |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 8G PARALLEL 96LFBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3L
- Memory Size: 8Gb (512M x 16)
- Memory Interface: Parallel
- Clock Frequency: 667MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 20ns
- Voltage - Supply: 1.283 V ~ 1.45 V
- Operating Temperature: -40°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 96-LFBGA
- Supplier Device Package: 96-LFBGA (10x14)
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Package: 96-LFBGA |
Stock3,536 |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 400MHZ
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR2-S4
- Memory Size: 512Mb (16M x 32)
- Memory Interface: Parallel
- Clock Frequency: 400MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: -
- Voltage - Supply: 1.14 V ~ 1.95 V
- Operating Temperature: -40°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 134-TFBGA
- Supplier Device Package: 134-TFBGA (10x11.5)
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Package: 134-TFBGA |
Stock7,264 |
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ISSI, Integrated Silicon Solution Inc |
IC FLASH 32M SPI 104MHZ 16SOIC
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 32Mb (4M x 8)
- Memory Interface: SPI - Quad I/O, QPI, DTR
- Clock Frequency: 104MHz
- Write Cycle Time - Word, Page: 800µs
- Access Time: 8ns
- Voltage - Supply: 1.65 V ~ 1.95 V
- Operating Temperature: -40°C ~ 105°C
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 16-SOIC
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Package: 16-SOIC (0.295", 7.50mm Width) |
Stock13,464 |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 1G PARALLEL 60TWBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR2
- Memory Size: 1Gb (128M x 8)
- Memory Interface: Parallel
- Clock Frequency: 400MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 400ps
- Voltage - Supply: 1.7 V ~ 1.9 V
- Operating Temperature: -40°C ~ 105°C
- Mounting Type: Surface Mount
- Package / Case: 60-TFBGA
- Supplier Device Package: 60-TWBGA (8x10.5)
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Package: 60-TFBGA |
Stock4,832 |
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ISSI, Integrated Silicon Solution Inc |
256M, 1.8V, Mobile DDR, 16Mx16,
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR
- Memory Size: 256Mbit
- Memory Interface: Parallel
- Clock Frequency: 166 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 5.5 ns
- Voltage - Supply: 1.7V ~ 1.95V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 60-TFBGA
- Supplier Device Package: 60-TFBGA (8x10)
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Package: - |
Request a Quote |
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ISSI, Integrated Silicon Solution Inc |
512M, 1.8V, DDR2, 32Mx16, 333Mhz
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR2
- Memory Size: 512Mbit
- Memory Interface: SSTL_18
- Clock Frequency: 333 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 450 ps
- Voltage - Supply: 1.7V ~ 1.9V
- Operating Temperature: 0°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 84-TFBGA
- Supplier Device Package: 84-TWBGA (8x12.5)
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Package: - |
Request a Quote |
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ISSI, Integrated Silicon Solution Inc |
32Mb,High-Speed,Async,2Mbx16, 12
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 32Mbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 12ns
- Access Time: 12 ns
- Voltage - Supply: 1.65V ~ 2.2V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-TFSOP (0.724", 18.40mm Width)
- Supplier Device Package: 48-TSOP I
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Package: - |
Request a Quote |
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ISSI, Integrated Silicon Solution Inc |
Automotive (Tc: -40 to +105C), 8
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR4
- Memory Size: 8Gbit
- Memory Interface: Parallel
- Clock Frequency: 1.2 GHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 18 ns
- Voltage - Supply: 1.14V ~ 1.26V
- Operating Temperature: -40°C ~ 105°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 96-TFBGA
- Supplier Device Package: 96-TWBGA (10x14)
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Package: - |
Request a Quote |
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ISSI, Integrated Silicon Solution Inc |
4G, 0.57-0.65V/1.06-1.17/1.70-1.
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR4X
- Memory Size: 4Gbit
- Memory Interface: LVSTL
- Clock Frequency: 1.6 GHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
- Operating Temperature: -40°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 200-TFBGA
- Supplier Device Package: 200-TFBGA (10x14.5)
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Package: - |
Request a Quote |
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