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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 256MBIT 133MHZ 90BGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile
- Memory Size: 256Mb (8M x 32)
- Memory Interface: Parallel
- Clock Frequency: 133MHz
- Write Cycle Time - Word, Page: -
- Access Time: 5.4ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 90-TFBGA
- Supplier Device Package: 90-TFBGA (8x13)
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Package: 90-TFBGA |
Stock6,032 |
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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 256MBIT 143MHZ 54BGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile
- Memory Size: 256Mb (16M x 16)
- Memory Interface: Parallel
- Clock Frequency: 143MHz
- Write Cycle Time - Word, Page: -
- Access Time: 5.4ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-TFBGA
- Supplier Device Package: 54-TFBGA (8x8)
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Package: 54-TFBGA |
Stock2,336 |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 36MBIT 166MHZ 119PBGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous
- Memory Size: 36Mb (1M x 36)
- Memory Interface: Parallel
- Clock Frequency: 166MHz
- Write Cycle Time - Word, Page: -
- Access Time: 3.8ns
- Voltage - Supply: 3.135 V ~ 3.465 V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 119-BBGA
- Supplier Device Package: 119-PBGA (14x22)
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Package: 119-BBGA |
Stock6,976 |
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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 128MBIT 166MHZ 54TSOP
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 128Mb (8M x 16)
- Memory Interface: Parallel
- Clock Frequency: 166MHz
- Write Cycle Time - Word, Page: -
- Access Time: 5.4ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 54-TSOP II
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Package: 54-TSOP (0.400", 10.16mm Width) |
Stock7,280 |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 18MBIT 6.5NS 100TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous
- Memory Size: 18Mb (1M x 18)
- Memory Interface: Parallel
- Clock Frequency: 133MHz
- Write Cycle Time - Word, Page: -
- Access Time: 6.5ns
- Voltage - Supply: 3.135 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x20)
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Package: 100-LQFP |
Stock6,160 |
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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 64MBIT 143MHZ 86TSOP
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 64Mb (2M x 32)
- Memory Interface: Parallel
- Clock Frequency: 143MHz
- Write Cycle Time - Word, Page: -
- Access Time: 5.5ns
- Voltage - Supply: 3.15 V ~ 3.45 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 86-TFSOP (0.400", 10.16mm Width)
- Supplier Device Package: 86-TSOP II
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Package: 86-TFSOP (0.400", 10.16mm Width) |
Stock3,136 |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 16MBIT 60NS 42SOJ
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: DRAM - EDO
- Memory Size: 16Mb (1M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 30ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 42-BSOJ (0.400", 10.16mm)
- Supplier Device Package: 42-SOJ
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Package: 42-BSOJ (0.400", 10.16mm) |
Stock2,144 |
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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 512MBIT 200MHZ 66TSOP
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR
- Memory Size: 512Mb (32M x 16)
- Memory Interface: Parallel
- Clock Frequency: 200MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 700ps
- Voltage - Supply: 2.5 V ~ 2.7 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 66-TSSOP (0.400", 10.16mm Width)
- Supplier Device Package: 66-TSOP II
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Package: 66-TSSOP (0.400", 10.16mm Width) |
Stock2,864 |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 256KBIT 45NS 28SOP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 256Kb (32K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 45ns
- Access Time: 45ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 28-SOIC (0.330", 8.38mm Width)
- Supplier Device Package: 28-SOP
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Package: 28-SOIC (0.330", 8.38mm Width) |
Stock5,856 |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 18MBIT 200MHZ 100TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous
- Memory Size: 18Mb (512K x 36)
- Memory Interface: Parallel
- Clock Frequency: 200MHz
- Write Cycle Time - Word, Page: -
- Access Time: 3ns
- Voltage - Supply: 3.135 V ~ 3.465 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-LQFP (14x20)
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Package: 100-LQFP |
Stock4,336 |
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ISSI, Integrated Silicon Solution Inc |
IC FLASH 1MBIT 104MHZ 8SOIC
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 1Mb (128K x 8)
- Memory Interface: SPI - Quad I/O
- Clock Frequency: 104MHz
- Write Cycle Time - Word, Page: 800µs
- Access Time: -
- Voltage - Supply: 2.3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.209", 5.30mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.209", 5.30mm Width) |
Stock25,224 |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 16M PARALLEL 48MGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 16Mb (1M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 20ns
- Access Time: 20ns
- Voltage - Supply: 1.65 V ~ 2.2 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-TFBGA
- Supplier Device Package: 48-miniBGA (9x11)
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Package: 48-TFBGA |
Stock4,528 |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 9M PARALLEL 200MHZ
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous
- Memory Size: 9Mb (256K x 36)
- Memory Interface: Parallel
- Clock Frequency: 200MHz
- Write Cycle Time - Word, Page: -
- Access Time: 3.1ns
- Voltage - Supply: 3.135 V ~ 3.465 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-LQFP (14x20)
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Package: 100-LQFP |
Stock3,728 |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 2G PARALLEL 78TWBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3
- Memory Size: 2Gb (256M x 8)
- Memory Interface: Parallel
- Clock Frequency: 667MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 20ns
- Voltage - Supply: 1.425 V ~ 1.575 V
- Operating Temperature: -40°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 78-TFBGA
- Supplier Device Package: 78-TWBGA (8x10.5)
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Package: 78-TFBGA |
Stock5,424 |
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ISSI, Integrated Silicon Solution Inc |
IC FLASH 64M SPI 133MHZ 8WSON
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 64Mb (8M x 8)
- Memory Interface: SPI - Quad I/O, QPI, DTR
- Clock Frequency: 133MHz
- Write Cycle Time - Word, Page: 800µs
- Access Time: -
- Voltage - Supply: 1.65 V ~ 1.95 V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-WDFN Exposed Pad
- Supplier Device Package: 8-WSON (8x6)
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Package: 8-WDFN Exposed Pad |
Stock4,240 |
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ISSI, Integrated Silicon Solution Inc |
512Mb QPI/QSPI, 8-pin WSON 6X8MM
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR (SLC)
- Memory Size: 512Mbit
- Memory Interface: SPI - Quad I/O, QPI, DTR
- Clock Frequency: 112 MHz
- Write Cycle Time - Word, Page: 50µs, 1ms
- Access Time: -
- Voltage - Supply: 1.7V ~ 1.95V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-WDFN Exposed Pad
- Supplier Device Package: 8-WSON (8x6)
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Package: - |
Request a Quote |
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ISSI, Integrated Silicon Solution Inc |
128Mb QPI/QSPI, 8-pin SOP 208Mil
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR (SLC)
- Memory Size: 128Mbit
- Memory Interface: SPI - Quad I/O, QPI, DTR
- Clock Frequency: 166 MHz
- Write Cycle Time - Word, Page: 40µs, 800µs
- Access Time: 5.5 ns
- Voltage - Supply: 1.65V ~ 1.95V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.209", 5.30mm Width)
- Supplier Device Package: 8-SOIC
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Package: - |
Request a Quote |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 4GBIT HSUL 12 168VFBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR2
- Memory Size: 4Gbit
- Memory Interface: HSUL_12
- Clock Frequency: 533 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 5.5 ns
- Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
- Operating Temperature: -40°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 168-VFBGA
- Supplier Device Package: 168-VFBGA (12x12)
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Package: - |
Request a Quote |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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ISSI, Integrated Silicon Solution Inc |
RLDRAM3 Memory, 1.15Gbit, x36, C
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: RLDRAM 3
- Memory Size: 1.152Gbit
- Memory Interface: Parallel
- Clock Frequency: 933 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 8 ns
- Voltage - Supply: 1.28V ~ 1.42V
- Operating Temperature: 0°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 168-LBGA
- Supplier Device Package: 168-FBGA (13.5x13.5)
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Package: - |
Request a Quote |
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ISSI, Integrated Silicon Solution Inc |
2G, 1.2/1.8V, LPDDR2, 64Mx32, 40
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR2-S4
- Memory Size: 2Gbit
- Memory Interface: HSUL_12
- Clock Frequency: 400 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 5.5 ns
- Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
- Operating Temperature: -40°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 134-TFBGA
- Supplier Device Package: 134-TFBGA (10x11.5)
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Package: - |
Request a Quote |
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ISSI, Integrated Silicon Solution Inc |
Automotive (Tc: -40 to +95C), 16
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3L
- Memory Size: 16Gbit
- Memory Interface: Parallel
- Clock Frequency: 800 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 20 ns
- Voltage - Supply: 1.283V ~ 1.45V
- Operating Temperature: -40°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 96-LFBGA
- Supplier Device Package: 96-LWBGA (10x14)
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Package: - |
Request a Quote |
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ISSI, Integrated Silicon Solution Inc |
IC FLASH 256GBIT EMMC 153VFBGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND (TLC)
- Memory Size: 256Gbit
- Memory Interface: eMMC_5.1
- Clock Frequency: 200 MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 153-VFBGA
- Supplier Device Package: 153-VFBGA (11.5x13)
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Package: - |
Request a Quote |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 4GBIT PAR 96TWBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3L
- Memory Size: 4Gbit
- Memory Interface: Parallel
- Clock Frequency: 933 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 20 ns
- Voltage - Supply: 1.283V ~ 1.45V
- Operating Temperature: -40°C ~ 125°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 96-TFBGA
- Supplier Device Package: 96-TWBGA (9x13)
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Package: - |
Request a Quote |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 256MBIT PAR 54TSOP II
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 256Mbit
- Memory Interface: LVTTL
- Clock Frequency: 166 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 5.4 ns
- Voltage - Supply: 3V ~ 3.6V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 54-TSOP II
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Package: - |
Request a Quote |
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ISSI, Integrated Silicon Solution Inc |
Automotive (Tc: -40 to +95C), 4G
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR4
- Memory Size: 4Gbit
- Memory Interface: LVSTL
- Clock Frequency: 1.6 GHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
- Operating Temperature: -40°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 200-WFBGA
- Supplier Device Package: 200-VFBGA (10x14.5)
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Package: - |
Request a Quote |
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ISSI, Integrated Silicon Solution Inc |
IC PSRAM 64MBIT PARALLEL 104MHZ
- Memory Type: Volatile
- Memory Format: PSRAM
- Technology: PSRAM (Pseudo SRAM)
- Memory Size: 64Mbit
- Memory Interface: Parallel
- Clock Frequency: 104 MHz
- Write Cycle Time - Word, Page: 70ns
- Access Time: 70 ns
- Voltage - Supply: 1.7V ~ 1.95V
- Operating Temperature: -40°C ~ 85°C (TC)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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ISSI, Integrated Silicon Solution Inc |
Automotive (Tc: -40 to +95C), 4G
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR4X
- Memory Size: 4Gbit
- Memory Interface: LVSTL
- Clock Frequency: 1.6 GHz
- Write Cycle Time - Word, Page: 18ns
- Access Time: 3.5 ns
- Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
- Operating Temperature: -40°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 200-WFBGA
- Supplier Device Package: 200-VFBGA (10x14.5)
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Package: - |
Request a Quote |
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