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IXYS Integrated Circuits Division |
MOSFET N-CH 350V SOT89
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 350V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): 0V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V
- Vgs (Max): ±20V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 1.6W (Ta)
- Rds On (Max) @ Id, Vgs: 35 Ohm @ 140mA, 0V
- Operating Temperature: -55°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-89
- Package / Case: TO-243AA
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Package: TO-243AA |
Stock6,832 |
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MOSFET (Metal Oxide) | 350V | - | 0V | - | - | 200pF @ 25V | ±20V | Depletion Mode | 1.6W (Ta) | 35 Ohm @ 140mA, 0V | -55°C ~ 125°C (TJ) | Surface Mount | SOT-89 | TO-243AA |
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IXYS Integrated Circuits Division |
MOSFET N-CH 350V SOT89
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 350V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): 0V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
- Vgs (Max): ±15V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 1.4W (Ta)
- Rds On (Max) @ Id, Vgs: 22 Ohm @ 130mA, 0V
- Operating Temperature: -55°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-89
- Package / Case: TO-243AA
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Package: TO-243AA |
Stock2,784 |
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MOSFET (Metal Oxide) | 350V | - | 0V | - | - | 350pF @ 25V | ±15V | Depletion Mode | 1.4W (Ta) | 22 Ohm @ 130mA, 0V | -55°C ~ 125°C (TJ) | Surface Mount | SOT-89 | TO-243AA |
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IXYS Integrated Circuits Division |
MOSFET N-CH 350V SOT89
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 350V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): 0V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V
- Vgs (Max): ±15V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 1.4W (Ta)
- Rds On (Max) @ Id, Vgs: 14 Ohm @ 240mA, 0V
- Operating Temperature: -55°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-89
- Package / Case: TO-243AA
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Package: TO-243AA |
Stock7,168 |
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MOSFET (Metal Oxide) | 350V | - | 0V | - | - | 100pF @ 25V | ±15V | Depletion Mode | 1.4W (Ta) | 14 Ohm @ 240mA, 0V | -55°C ~ 125°C (TJ) | Surface Mount | SOT-89 | TO-243AA |
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IXYS Integrated Circuits Division |
MOSFET N-CH 250V SOT89
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): 0V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
- Vgs (Max): ±15V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 1.4W (Ta)
- Rds On (Max) @ Id, Vgs: 10 Ohm @ 220mA, 0V
- Operating Temperature: -55°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-89
- Package / Case: TO-243AA
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Package: TO-243AA |
Stock6,176 |
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MOSFET (Metal Oxide) | 250V | - | 0V | - | - | 350pF @ 25V | ±15V | Depletion Mode | 1.4W (Ta) | 10 Ohm @ 220mA, 0V | -55°C ~ 125°C (TJ) | Surface Mount | SOT-89 | TO-243AA |
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IXYS Integrated Circuits Division |
MOSFET N-CH 60V SOT89
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): 0V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±15V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 1.1W (Ta)
- Rds On (Max) @ Id, Vgs: 1 Ohm @ 300mA, 0V
- Operating Temperature: -55°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-89
- Package / Case: TO-243AA
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Package: TO-243AA |
Stock4,144 |
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MOSFET (Metal Oxide) | 60V | - | 0V | - | - | - | ±15V | Depletion Mode | 1.1W (Ta) | 1 Ohm @ 300mA, 0V | -55°C ~ 125°C (TJ) | Surface Mount | SOT-89 | TO-243AA |
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IXYS Integrated Circuits Division |
MOSFET N-CH 250V 360MA SOT-89
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 0V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
- Vgs (Max): ±15V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 1.6W (Ta)
- Rds On (Max) @ Id, Vgs: 4 Ohm @ 200mA, 0V
- Operating Temperature: -55°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-89-3
- Package / Case: TO-243AA
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Package: TO-243AA |
Stock2,112 |
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MOSFET (Metal Oxide) | 250V | 360mA (Ta) | 0V | - | - | 350pF @ 25V | ±15V | Depletion Mode | 1.6W (Ta) | 4 Ohm @ 200mA, 0V | -55°C ~ 125°C (TJ) | Surface Mount | SOT-89-3 | TO-243AA |
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IXYS Integrated Circuits Division |
MOSFET N-CH 250V SOT-89
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): 0V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
- Vgs (Max): ±15V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 1.1W (Ta)
- Rds On (Max) @ Id, Vgs: 4 Ohm @ 200mA, 0V
- Operating Temperature: -55°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-89
- Package / Case: TO-243AA
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Package: TO-243AA |
Stock5,152 |
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MOSFET (Metal Oxide) | 250V | - | 0V | - | - | 350pF @ 25V | ±15V | Depletion Mode | 1.1W (Ta) | 4 Ohm @ 200mA, 0V | -55°C ~ 125°C (TJ) | Surface Mount | SOT-89 | TO-243AA |
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IXYS Integrated Circuits Division |
MOSFET N-CH 350V 0.005A SOT-223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 350V
- Current - Continuous Drain (Id) @ 25°C: 5mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -0.35V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 0V
- Vgs (Max): ±20V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 14 Ohm @ 50mA, 350mV
- Operating Temperature: -40°C ~ 110°C (TA)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
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Package: TO-261-4, TO-261AA |
Stock5,120 |
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MOSFET (Metal Oxide) | 350V | 5mA (Ta) | -0.35V | - | - | 300pF @ 0V | ±20V | Depletion Mode | 2.5W (Ta) | 14 Ohm @ 50mA, 350mV | -40°C ~ 110°C (TA) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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IXYS Integrated Circuits Division |
MOSFET N-CH 350V 0.005A SOT-89
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 350V
- Current - Continuous Drain (Id) @ 25°C: 5mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -0.35V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 0V
- Vgs (Max): ±20V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 1.1W (Ta)
- Rds On (Max) @ Id, Vgs: 14 Ohm @ 50mA, 350mV
- Operating Temperature: -40°C ~ 110°C (TA)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-89
- Package / Case: TO-243AA
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Package: TO-243AA |
Stock2,160 |
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MOSFET (Metal Oxide) | 350V | 5mA (Ta) | -0.35V | - | - | 300pF @ 0V | ±20V | Depletion Mode | 1.1W (Ta) | 14 Ohm @ 50mA, 350mV | -40°C ~ 110°C (TA) | Surface Mount | SOT-89 | TO-243AA |
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IXYS Integrated Circuits Division |
MOSFET N-CH 250V TO-243AA
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): 0V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 20V
- Vgs (Max): ±15V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 1.8W (Ta)
- Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 300mA, 0V
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-89
- Package / Case: TO-243AA
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Package: TO-243AA |
Stock2,288 |
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MOSFET (Metal Oxide) | 250V | - | 0V | - | - | 230pF @ 20V | ±15V | Depletion Mode | 1.8W (Ta) | 2.5 Ohm @ 300mA, 0V | 125°C (TJ) | Surface Mount | SOT-89 | TO-243AA |
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IXYS Integrated Circuits Division |
MOSFET N-CH 60V SOT89
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): 0V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±15V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 1.1W (Ta)
- Rds On (Max) @ Id, Vgs: 1 Ohm @ 300mA, 0V
- Operating Temperature: -55°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-89
- Package / Case: TO-243AA
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Package: TO-243AA |
Stock4,160 |
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MOSFET (Metal Oxide) | 60V | - | 0V | - | - | - | ±15V | Depletion Mode | 1.1W (Ta) | 1 Ohm @ 300mA, 0V | -55°C ~ 125°C (TJ) | Surface Mount | SOT-89 | TO-243AA |
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IXYS Integrated Circuits Division |
MOSFET N-CH 250V SOT89
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): 0V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
- Vgs (Max): ±15V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 1.4W (Ta)
- Rds On (Max) @ Id, Vgs: 10 Ohm @ 220mA, 0V
- Operating Temperature: -55°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-89
- Package / Case: TO-243AA
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Package: TO-243AA |
Stock6,304 |
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MOSFET (Metal Oxide) | 250V | - | 0V | - | - | 350pF @ 25V | ±15V | Depletion Mode | 1.4W (Ta) | 10 Ohm @ 220mA, 0V | -55°C ~ 125°C (TJ) | Surface Mount | SOT-89 | TO-243AA |
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IXYS Integrated Circuits Division |
MOSFET N-CH 400V SOT-223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 400V
- Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 0V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): 15V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 9 Ohm @ 300mA, 0V
- Operating Temperature: -40°C ~ 110°C (TA)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
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Package: TO-261-4, TO-261AA |
Stock4,576 |
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MOSFET (Metal Oxide) | 400V | 300mA (Ta) | 0V | - | - | - | 15V | Depletion Mode | 2.5W (Ta) | 9 Ohm @ 300mA, 0V | -40°C ~ 110°C (TA) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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IXYS Integrated Circuits Division |
MOSFET N-CH 400V SOT-89
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 400V
- Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 0V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): 15V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 1.1W (Ta)
- Rds On (Max) @ Id, Vgs: 9 Ohm @ 300mA, 0V
- Operating Temperature: -40°C ~ 110°C (TA)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-89
- Package / Case: TO-243AA
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Package: TO-243AA |
Stock3,536 |
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MOSFET (Metal Oxide) | 400V | 300mA (Ta) | 0V | - | - | - | 15V | Depletion Mode | 1.1W (Ta) | 9 Ohm @ 300mA, 0V | -40°C ~ 110°C (TA) | Surface Mount | SOT-89 | TO-243AA |
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IXYS Integrated Circuits Division |
MOSFET N-CH 250V SOT-223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): 0V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 20V
- Vgs (Max): ±15V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 1.8W (Tc)
- Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 300mA, 0V
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
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Package: TO-261-4, TO-261AA |
Stock2,464 |
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MOSFET (Metal Oxide) | 250V | - | 0V | - | - | 230pF @ 20V | ±15V | Depletion Mode | 1.8W (Tc) | 2.5 Ohm @ 300mA, 0V | 125°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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IXYS Integrated Circuits Division |
MOSFET N-CH 600V SOT-223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): 0V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V
- Vgs (Max): ±15V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 1.8W (Ta)
- Rds On (Max) @ Id, Vgs: 44 Ohm @ 100mA, 0V
- Operating Temperature: -55°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
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Package: TO-261-4, TO-261AA |
Stock22,704 |
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MOSFET (Metal Oxide) | 600V | - | 0V | - | - | 100pF @ 25V | ±15V | Depletion Mode | 1.8W (Ta) | 44 Ohm @ 100mA, 0V | -55°C ~ 125°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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IXYS Integrated Circuits Division |
MOSFET N-CH 800V SOT-23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): 0V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 25V
- Vgs (Max): ±15V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 400mW (Ta)
- Rds On (Max) @ Id, Vgs: 380 Ohm @ 20mA, 0V
- Operating Temperature: -55°C ~ 110°C (TA)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock6,624 |
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MOSFET (Metal Oxide) | 800V | - | 0V | - | - | 20pF @ 25V | ±15V | Depletion Mode | 400mW (Ta) | 380 Ohm @ 20mA, 0V | -55°C ~ 110°C (TA) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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IXYS Integrated Circuits Division |
MOSFET N-CH 415V 5MA SOT-223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 415V
- Current - Continuous Drain (Id) @ 25°C: 5mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -0.35V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 0V
- Vgs (Max): ±20V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 14 Ohm @ 50mA, 350mV
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
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Package: TO-261-4, TO-261AA |
Stock15,606 |
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MOSFET (Metal Oxide) | 415V | 5mA (Ta) | -0.35V | - | - | 300pF @ 0V | ±20V | Depletion Mode | 2.5W (Ta) | 14 Ohm @ 50mA, 350mV | -40°C ~ 85°C (TA) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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IXYS Integrated Circuits Division |
MOSFET N-CH 800V SOT-223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): 0V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 25V
- Vgs (Max): ±15V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 1.8W (Ta)
- Rds On (Max) @ Id, Vgs: 45 Ohm @ 100mA, 0V
- Operating Temperature: -55°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
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Package: TO-261-4, TO-261AA |
Stock101,886 |
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MOSFET (Metal Oxide) | 800V | - | 0V | - | - | 115pF @ 25V | ±15V | Depletion Mode | 1.8W (Ta) | 45 Ohm @ 100mA, 0V | -55°C ~ 125°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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IXYS Integrated Circuits Division |
MOSFET N-CH 350V 5MA SOT-223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 350V
- Current - Continuous Drain (Id) @ 25°C: 5mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -0.35V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 0V
- Vgs (Max): ±20V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 14 Ohm @ 50mA, 350mV
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
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Package: TO-261-4, TO-261AA |
Stock506,640 |
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MOSFET (Metal Oxide) | 350V | 5mA (Ta) | -0.35V | - | - | 300pF @ 0V | ±20V | Depletion Mode | 2.5W (Ta) | 14 Ohm @ 50mA, 350mV | -40°C ~ 85°C (TA) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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IXYS Integrated Circuits Division |
MOSFET N-CH 250V 360MA SOT-89
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 0V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
- Vgs (Max): ±15V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 1.1W (Ta)
- Rds On (Max) @ Id, Vgs: 4 Ohm @ 200mA, 0V
- Operating Temperature: -55°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-89-3
- Package / Case: TO-243AA
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Package: TO-243AA |
Stock350,388 |
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MOSFET (Metal Oxide) | 250V | 360mA (Ta) | 0V | - | - | 350pF @ 25V | ±15V | Depletion Mode | 1.1W (Ta) | 4 Ohm @ 200mA, 0V | -55°C ~ 125°C (TA) | Surface Mount | SOT-89-3 | TO-243AA |
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IXYS Integrated Circuits Division |
MOSFET N-CH 350V SOT89
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 350 V
- Current - Continuous Drain (Id) @ 25°C: 140mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
- Vgs (Max): -
- FET Feature: Depletion Mode
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 35Ohm @ 140mA, 0V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-89
- Package / Case: TO-243AA
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MOSFET (Metal Oxide) | 350 V | 140mA (Ta) | - | - | - | 200 pF @ 25 V | - | Depletion Mode | - | 35Ohm @ 140mA, 0V | - | Surface Mount | SOT-89 | TO-243AA |
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IXYS Integrated Circuits Division |
MOSFET N-CH 350V SOT89
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 350 V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
- Vgs (Max): -
- FET Feature: Depletion Mode
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 14Ohm @ 240mA, 0V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-89
- Package / Case: TO-243AA
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Package: - |
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MOSFET (Metal Oxide) | 350 V | - | - | - | - | 100 pF @ 25 V | - | Depletion Mode | - | 14Ohm @ 240mA, 0V | - | Surface Mount | SOT-89 | TO-243AA |
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IXYS Integrated Circuits Division |
MOSFET N-CH DEP 800V 45OH SOT223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 100mA
- Drive Voltage (Max Rds On, Min Rds On): 0V
- Vgs(th) (Max) @ Id: 3.1V @ 1µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 25 V
- Vgs (Max): ±15V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 2.25W (Ta)
- Rds On (Max) @ Id, Vgs: 45Ohm @ 100mA, 0V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223-2L
- Package / Case: TO-261-3
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Package: - |
Stock8,685 |
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MOSFET (Metal Oxide) | 800 V | 100mA | 0V | 3.1V @ 1µA | - | 105 pF @ 25 V | ±15V | Depletion Mode | 2.25W (Ta) | 45Ohm @ 100mA, 0V | 150°C (TJ) | Surface Mount | SOT-223-2L | TO-261-3 |
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IXYS Integrated Circuits Division |
MOSFET N-CH 350V SOT89
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 350 V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
- Vgs (Max): -
- FET Feature: Depletion Mode
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 22Ohm @ 130mA, 0V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-89
- Package / Case: TO-243AA
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Package: - |
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MOSFET (Metal Oxide) | 350 V | - | - | - | - | 350 pF @ 25 V | - | Depletion Mode | - | 22Ohm @ 130mA, 0V | - | Surface Mount | SOT-89 | TO-243AA |