Page 5 - IXYS Integrated Circuits Division Products - PMIC - Gate Drivers

IXDD630CI
IXYS Integrated Circuits Division

IC GATE DRIVER LOW SIDE 5TO220

Package: TO-220-5

Stock25,032
IXDI630CI
IXYS Integrated Circuits Division

IC GATE DRIVER LOW SIDE 5TO220

Package: TO-220-5

Stock5,792
IXDN614YI
IXYS Integrated Circuits Division

14A 5LEAD TO-263 NON INVERTING

Package: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA

Stock3,760
IXDI614YI
IXYS Integrated Circuits Division

14A 5 LEAD TO-263 INVERTING

Package: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA

Stock2,656
IXDI614CI
IXYS Integrated Circuits Division

14A 5 PIN TO-220 INVERTING

Package: TO-220-5 Formed Leads

Stock2,064
IXDN614SI
IXYS Integrated Circuits Division

14A 8SOIC EXP MTL NON INVERTING

Package: 8-SOIC (0.154", 3.90mm Width) Exposed Pad

Stock56,796
IXDI614SI
IXYS Integrated Circuits Division

14A 8LEAD SOIC EXP MTL INVERTING

Package: 8-SOIC (0.154", 3.90mm Width) Exposed Pad

Stock39,576
IXDD614SI
IXYS Integrated Circuits Division

14A 8SOIC EXP MTL NON INV W/ENAB

Package: 8-SOIC (0.154", 3.90mm Width) Exposed Pad

Stock41,880
IXDN614SITR
IXYS Integrated Circuits Division

14A 8SOIC EXP MTL NON INVERTING

Package: 8-SOIC (0.154", 3.90mm Width) Exposed Pad

Stock7,152
IXDI614SITR
IXYS Integrated Circuits Division

14A 8LEAD SOIC EXP MTL INVERTING

Package: 8-SOIC (0.154", 3.90mm Width) Exposed Pad

Stock6,224
IXDD614SITR
IXYS Integrated Circuits Division

14A 8SOIC EXP MTL NON INV W/ENAB

Package: 8-SOIC (0.154", 3.90mm Width) Exposed Pad

Stock5,264
IX2204NETR
IXYS Integrated Circuits Division

IC IGBT GATE DVR DUAL 16SOIC

Package: 16-SOIC (0.154", 3.90mm Width)

Stock3,056
IXDN609YI
IXYS Integrated Circuits Division

IC GATE DVR 9A NON-INV TO263-5

Package: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA

Stock19,368
IXDN609CI
IXYS Integrated Circuits Division

IC GATE DVR 9A NON-INV TO220-5

Package: TO-220-5 Formed Leads

Stock12,384
IXDI609CI
IXYS Integrated Circuits Division

IC GATE DVR 9A NON-INV TO220-5

Package: TO-220-5

Stock4,816
IXDD609YI
IXYS Integrated Circuits Division

IC GATE DVR 9A NON-INV TO263-5

Package: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA

Stock7,872
IXDN604SITR
IXYS Integrated Circuits Division

IC GATE DVR 4A DUAL HS 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width) Exposed Pad

Stock6,528
IXDI604SITR
IXYS Integrated Circuits Division

IC GATE DVR 4A DUAL HS 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width) Exposed Pad

Stock5,184
IXDF604SITR
IXYS Integrated Circuits Division

IC GATE DVR 4A DUAL HS 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width) Exposed Pad

Stock3,008
IXDD604SITR
IXYS Integrated Circuits Division

IC GATE DVR 4A DUAL HS 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width) Exposed Pad

Stock3,552

Part Number	Manufacturer	Description	Package	Stock	Channel Type	Number of Drivers	Gate Type	Voltage - Supply	Logic Voltage - VIL, VIH	Current - Peak Output (Source, Sink)	Input Type	High Side Voltage - Max (Bootstrap)	Rise / Fall Time (Typ)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IXDD630CI	IXYS Integrated Circuits Division	IC GATE DRIVER LOW SIDE 5TO220 Driven Configuration: Low-Side Channel Type: Single Number of Drivers: 1 Gate Type: IGBT, N-Channel, P-Channel MOSFET Voltage - Supply: 12.5 V ~ 35 V Logic Voltage - VIL, VIH: 0.8V, 3.5V Current - Peak Output (Source, Sink): 30A, 30A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 11ns, 11ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-5 Supplier Device Package: TO-220-5	Package: TO-220-5	Stock25,032	Single	1	IGBT, N-Channel, P-Channel MOSFET	12.5 V ~ 35 V	0.8V, 3.5V	30A, 30A	Non-Inverting	-	11ns, 11ns	-55°C ~ 150°C (TJ)	Through Hole	TO-220-5	TO-220-5
IXDI630CI	IXYS Integrated Circuits Division	IC GATE DRIVER LOW SIDE 5TO220 Driven Configuration: Low-Side Channel Type: Single Number of Drivers: 1 Gate Type: IGBT, N-Channel, P-Channel MOSFET Voltage - Supply: 12.5 V ~ 35 V Logic Voltage - VIL, VIH: 0.8V, 3.5V Current - Peak Output (Source, Sink): 30A, 30A Input Type: Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 11ns, 11ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-5 Supplier Device Package: TO-220-5	Package: TO-220-5	Stock5,792	Single	1	IGBT, N-Channel, P-Channel MOSFET	12.5 V ~ 35 V	0.8V, 3.5V	30A, 30A	Inverting	-	11ns, 11ns	-55°C ~ 150°C (TJ)	Through Hole	TO-220-5	TO-220-5
IXDN614YI	IXYS Integrated Circuits Division	14A 5LEAD TO-263 NON INVERTING Driven Configuration: Low-Side Channel Type: Single Number of Drivers: 1 Gate Type: IGBT, N-Channel, P-Channel MOSFET Voltage - Supply: 4.5 V ~ 35 V Logic Voltage - VIL, VIH: 0.8V, 3V Current - Peak Output (Source, Sink): 14A, 14A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 25ns, 18ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA Supplier Device Package: TO-263-5	Package: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA	Stock3,760	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	14A, 14A	Non-Inverting	-	25ns, 18ns	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-6, D2Pak (5 Leads + Tab), TO-263BA	TO-263-5
IXDI614YI	IXYS Integrated Circuits Division	14A 5 LEAD TO-263 INVERTING Driven Configuration: Low-Side Channel Type: Single Number of Drivers: 1 Gate Type: IGBT, N-Channel, P-Channel MOSFET Voltage - Supply: 4.5 V ~ 35 V Logic Voltage - VIL, VIH: 0.8V, 3V Current - Peak Output (Source, Sink): 14A, 14A Input Type: Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 25ns, 18ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA Supplier Device Package: TO-263-5	Package: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA	Stock2,656	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	14A, 14A	Inverting	-	25ns, 18ns	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-6, D2Pak (5 Leads + Tab), TO-263BA	TO-263-5
IXDI614CI	IXYS Integrated Circuits Division	14A 5 PIN TO-220 INVERTING Driven Configuration: Low-Side Channel Type: Single Number of Drivers: 1 Gate Type: IGBT, N-Channel, P-Channel MOSFET Voltage - Supply: 4.5 V ~ 35 V Logic Voltage - VIL, VIH: 0.8V, 3V Current - Peak Output (Source, Sink): 14A, 14A Input Type: Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 25ns, 18ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-5 Formed Leads Supplier Device Package: TO-220-5	Package: TO-220-5 Formed Leads	Stock2,064	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	14A, 14A	Inverting	-	25ns, 18ns	-55°C ~ 150°C (TJ)	Through Hole	TO-220-5 Formed Leads	TO-220-5
IXDN614SI	IXYS Integrated Circuits Division	14A 8SOIC EXP MTL NON INVERTING Driven Configuration: Low-Side Channel Type: Single Number of Drivers: 1 Gate Type: IGBT, N-Channel, P-Channel MOSFET Voltage - Supply: 4.5 V ~ 35 V Logic Voltage - VIL, VIH: 0.8V, 3V Current - Peak Output (Source, Sink): 14A, 14A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 25ns, 18ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Supplier Device Package: 8-SOIC-EP	Package: 8-SOIC (0.154", 3.90mm Width) Exposed Pad	Stock56,796	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	14A, 14A	Non-Inverting	-	25ns, 18ns	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width) Exposed Pad	8-SOIC-EP
IXDI614SI	IXYS Integrated Circuits Division	14A 8LEAD SOIC EXP MTL INVERTING Driven Configuration: Low-Side Channel Type: Single Number of Drivers: 1 Gate Type: IGBT, N-Channel, P-Channel MOSFET Voltage - Supply: 4.5 V ~ 35 V Logic Voltage - VIL, VIH: 0.8V, 3V Current - Peak Output (Source, Sink): 14A, 14A Input Type: Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 25ns, 18ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Supplier Device Package: 8-SOIC-EP	Package: 8-SOIC (0.154", 3.90mm Width) Exposed Pad	Stock39,576	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	14A, 14A	Inverting	-	25ns, 18ns	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width) Exposed Pad	8-SOIC-EP
IXDD614SI	IXYS Integrated Circuits Division	14A 8SOIC EXP MTL NON INV W/ENAB Driven Configuration: Low-Side Channel Type: Single Number of Drivers: 1 Gate Type: IGBT, N-Channel, P-Channel MOSFET Voltage - Supply: 4.5 V ~ 35 V Logic Voltage - VIL, VIH: 0.8V, 3V Current - Peak Output (Source, Sink): 14A, 14A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 25ns, 18ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Supplier Device Package: 8-SOIC-EP	Package: 8-SOIC (0.154", 3.90mm Width) Exposed Pad	Stock41,880	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	14A, 14A	Non-Inverting	-	25ns, 18ns	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width) Exposed Pad	8-SOIC-EP
IXDN614SITR	IXYS Integrated Circuits Division	14A 8SOIC EXP MTL NON INVERTING Driven Configuration: Low-Side Channel Type: Single Number of Drivers: 1 Gate Type: IGBT, N-Channel, P-Channel MOSFET Voltage - Supply: 4.5 V ~ 35 V Logic Voltage - VIL, VIH: 0.8V, 3V Current - Peak Output (Source, Sink): 14A, 14A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 25ns, 18ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Supplier Device Package: 8-SOIC-EP	Package: 8-SOIC (0.154", 3.90mm Width) Exposed Pad	Stock7,152	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	14A, 14A	Non-Inverting	-	25ns, 18ns	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width) Exposed Pad	8-SOIC-EP
IXDI614SITR	IXYS Integrated Circuits Division	14A 8LEAD SOIC EXP MTL INVERTING Driven Configuration: Low-Side Channel Type: Single Number of Drivers: 1 Gate Type: IGBT, N-Channel, P-Channel MOSFET Voltage - Supply: 4.5 V ~ 35 V Logic Voltage - VIL, VIH: 0.8V, 3V Current - Peak Output (Source, Sink): 14A, 14A Input Type: Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 25ns, 18ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Supplier Device Package: 8-SOIC-EP	Package: 8-SOIC (0.154", 3.90mm Width) Exposed Pad	Stock6,224	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	14A, 14A	Inverting	-	25ns, 18ns	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width) Exposed Pad	8-SOIC-EP
IXDD614SITR	IXYS Integrated Circuits Division	14A 8SOIC EXP MTL NON INV W/ENAB Driven Configuration: Low-Side Channel Type: Single Number of Drivers: 1 Gate Type: IGBT, N-Channel, P-Channel MOSFET Voltage - Supply: 4.5 V ~ 35 V Logic Voltage - VIL, VIH: 0.8V, 3V Current - Peak Output (Source, Sink): 14A, 14A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 25ns, 18ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Supplier Device Package: 8-SOIC-EP	Package: 8-SOIC (0.154", 3.90mm Width) Exposed Pad	Stock5,264	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	14A, 14A	Non-Inverting	-	25ns, 18ns	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width) Exposed Pad	8-SOIC-EP
IX2204NETR	IXYS Integrated Circuits Division	IC IGBT GATE DVR DUAL 16SOIC Driven Configuration: Low-Side Channel Type: Independent Number of Drivers: 2 Gate Type: IGBT Voltage - Supply: -10 V ~ 25 V Logic Voltage - VIL, VIH: 0.8V, 2V Current - Peak Output (Source, Sink): 2A, 4A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): -, 8ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	Package: 16-SOIC (0.154", 3.90mm Width)	Stock3,056	Independent	2	IGBT	-10 V ~ 25 V	0.8V, 2V	2A, 4A	Non-Inverting	-	-, 8ns	-55°C ~ 150°C (TJ)	Surface Mount	16-SOIC (0.154", 3.90mm Width)	16-SOIC
IXDN609YI	IXYS Integrated Circuits Division	IC GATE DVR 9A NON-INV TO263-5 Driven Configuration: Low-Side Channel Type: Single Number of Drivers: 1 Gate Type: IGBT, N-Channel, P-Channel MOSFET Voltage - Supply: 4.5 V ~ 35 V Logic Voltage - VIL, VIH: 0.8V, 3V Current - Peak Output (Source, Sink): 9A, 9A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 22ns, 15ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA Supplier Device Package: TO-263-5	Package: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA	Stock19,368	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	9A, 9A	Non-Inverting	-	22ns, 15ns	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-6, D2Pak (5 Leads + Tab), TO-263BA	TO-263-5
IXDN609CI	IXYS Integrated Circuits Division	IC GATE DVR 9A NON-INV TO220-5 Driven Configuration: Low-Side Channel Type: Single Number of Drivers: 1 Gate Type: IGBT, N-Channel, P-Channel MOSFET Voltage - Supply: 4.5 V ~ 35 V Logic Voltage - VIL, VIH: 0.8V, 3V Current - Peak Output (Source, Sink): 9A, 9A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 22ns, 15ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-5 Formed Leads Supplier Device Package: TO-220-5	Package: TO-220-5 Formed Leads	Stock12,384	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	9A, 9A	Non-Inverting	-	22ns, 15ns	-55°C ~ 150°C (TJ)	Through Hole	TO-220-5 Formed Leads	TO-220-5
IXDI609CI	IXYS Integrated Circuits Division	IC GATE DVR 9A NON-INV TO220-5 Driven Configuration: Low-Side Channel Type: Single Number of Drivers: 1 Gate Type: IGBT, N-Channel, P-Channel MOSFET Voltage - Supply: 4.5 V ~ 35 V Logic Voltage - VIL, VIH: 0.8V, 3V Current - Peak Output (Source, Sink): 9A, 9A Input Type: Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 22ns, 15ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-5 Supplier Device Package: TO-220-5	Package: TO-220-5	Stock4,816	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	9A, 9A	Inverting	-	22ns, 15ns	-55°C ~ 150°C (TJ)	Through Hole	TO-220-5	TO-220-5
IXDD609YI	IXYS Integrated Circuits Division	IC GATE DVR 9A NON-INV TO263-5 Driven Configuration: Low-Side Channel Type: Single Number of Drivers: 1 Gate Type: IGBT, N-Channel, P-Channel MOSFET Voltage - Supply: 4.5 V ~ 35 V Logic Voltage - VIL, VIH: 0.8V, 3V Current - Peak Output (Source, Sink): 9A, 9A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 22ns, 15ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA Supplier Device Package: TO-263	Package: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA	Stock7,872	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	9A, 9A	Non-Inverting	-	22ns, 15ns	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-6, D2Pak (5 Leads + Tab), TO-263BA	TO-263
IXDN604SITR	IXYS Integrated Circuits Division	IC GATE DVR 4A DUAL HS 8SOIC Driven Configuration: Low-Side Channel Type: Independent Number of Drivers: 2 Gate Type: IGBT, N-Channel, P-Channel MOSFET Voltage - Supply: 4.5 V ~ 35 V Logic Voltage - VIL, VIH: 0.8V, 3V Current - Peak Output (Source, Sink): 4A, 4A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 9ns, 8ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Supplier Device Package: 8-SOIC-EP	Package: 8-SOIC (0.154", 3.90mm Width) Exposed Pad	Stock6,528	Independent	2	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	4A, 4A	Non-Inverting	-	9ns, 8ns	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width) Exposed Pad	8-SOIC-EP
IXDI604SITR	IXYS Integrated Circuits Division	IC GATE DVR 4A DUAL HS 8SOIC Driven Configuration: Low-Side Channel Type: Independent Number of Drivers: 2 Gate Type: IGBT, N-Channel, P-Channel MOSFET Voltage - Supply: 4.5 V ~ 35 V Logic Voltage - VIL, VIH: 0.8V, 3V Current - Peak Output (Source, Sink): 4A, 4A Input Type: Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 9ns, 8ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Supplier Device Package: 8-SOIC-EP	Package: 8-SOIC (0.154", 3.90mm Width) Exposed Pad	Stock5,184	Independent	2	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	4A, 4A	Inverting	-	9ns, 8ns	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width) Exposed Pad	8-SOIC-EP
IXDF604SITR	IXYS Integrated Circuits Division	IC GATE DVR 4A DUAL HS 8SOIC Driven Configuration: Low-Side Channel Type: Independent Number of Drivers: 2 Gate Type: IGBT, N-Channel, P-Channel MOSFET Voltage - Supply: 4.5 V ~ 35 V Logic Voltage - VIL, VIH: 0.8V, 3V Current - Peak Output (Source, Sink): 4A, 4A Input Type: Inverting, Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 9ns, 8ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Supplier Device Package: 8-SOIC-EP	Package: 8-SOIC (0.154", 3.90mm Width) Exposed Pad	Stock3,008	Independent	2	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	4A, 4A	Inverting, Non-Inverting	-	9ns, 8ns	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width) Exposed Pad	8-SOIC-EP
IXDD604SITR	IXYS Integrated Circuits Division	IC GATE DVR 4A DUAL HS 8SOIC Driven Configuration: Low-Side Channel Type: Independent Number of Drivers: 2 Gate Type: IGBT, N-Channel, P-Channel MOSFET Voltage - Supply: 4.5 V ~ 35 V Logic Voltage - VIL, VIH: 0.8V, 3V Current - Peak Output (Source, Sink): 4A, 4A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 9ns, 8ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Supplier Device Package: 8-SOIC-EP	Package: 8-SOIC (0.154", 3.90mm Width) Exposed Pad	Stock3,552	Independent	2	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	4A, 4A	Non-Inverting	-	9ns, 8ns	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width) Exposed Pad	8-SOIC-EP
IXDI609SI	IXYS Integrated Circuits Division	IC GATE DVR 9A NON-INV 8SOIC Driven Configuration: Low-Side Channel Type: Single Number of Drivers: 1 Gate Type: IGBT, N-Channel, P-Channel MOSFET Voltage - Supply: 4.5 V ~ 35 V Logic Voltage - VIL, VIH: 0.8V, 3V Current - Peak Output (Source, Sink): 9A, 9A Input Type: Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 22ns, 15ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Supplier Device Package: 8-SOIC-EP	Package: 8-SOIC (0.154", 3.90mm Width) Exposed Pad	Stock7,664	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	9A, 9A	Inverting	-	22ns, 15ns	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width) Exposed Pad	8-SOIC-EP
IXDN609SITR	IXYS Integrated Circuits Division	IC GATE DVR 9A NON-INV 8SOIC Driven Configuration: Low-Side Channel Type: Single Number of Drivers: 1 Gate Type: IGBT, N-Channel, P-Channel MOSFET Voltage - Supply: 4.5 V ~ 35 V Logic Voltage - VIL, VIH: 0.8V, 3V Current - Peak Output (Source, Sink): 9A, 9A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 22ns, 15ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Supplier Device Package: 8-SOIC-EP	Package: 8-SOIC (0.154", 3.90mm Width) Exposed Pad	Stock3,824	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	9A, 9A	Non-Inverting	-	22ns, 15ns	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width) Exposed Pad	8-SOIC-EP
IXDI609SITR	IXYS Integrated Circuits Division	IC GATE DVR 9A NON-INV 8SOIC Driven Configuration: Low-Side Channel Type: Single Number of Drivers: 1 Gate Type: IGBT, N-Channel, P-Channel MOSFET Voltage - Supply: 4.5 V ~ 35 V Logic Voltage - VIL, VIH: 0.8V, 3V Current - Peak Output (Source, Sink): 9A, 9A Input Type: Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 22ns, 15ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Supplier Device Package: 8-SOIC-EP	Package: 8-SOIC (0.154", 3.90mm Width) Exposed Pad	Stock4,544	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	9A, 9A	Inverting	-	22ns, 15ns	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width) Exposed Pad	8-SOIC-EP
IXDD609SITR	IXYS Integrated Circuits Division	IC GATE DVR 9A NON-INV 8SOIC Driven Configuration: Low-Side Channel Type: Single Number of Drivers: 1 Gate Type: IGBT, N-Channel, P-Channel MOSFET Voltage - Supply: 4.5 V ~ 35 V Logic Voltage - VIL, VIH: 0.8V, 3V Current - Peak Output (Source, Sink): 9A, 9A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 22ns, 15ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Supplier Device Package: 8-SOIC-EP	Package: 8-SOIC (0.154", 3.90mm Width) Exposed Pad	Stock5,216	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	9A, 9A	Non-Inverting	-	22ns, 15ns	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width) Exposed Pad	8-SOIC-EP
IX2113G	IXYS Integrated Circuits Division	IC GATE DRVR 600V HI/LO 14DIP Driven Configuration: Half-Bridge Channel Type: Independent Number of Drivers: 2 Gate Type: IGBT, N-Channel, P-Channel MOSFET Voltage - Supply: 10 V ~ 20 V Logic Voltage - VIL, VIH: 6V, 9.5V Current - Peak Output (Source, Sink): 2A, 2A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600V Rise / Fall Time (Typ): 9.4ns, 9.7ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 14-DIP (0.300", 7.62mm) Supplier Device Package: 14-DIP	Package: 14-DIP (0.300", 7.62mm)	Stock7,184	Independent	2	IGBT, N-Channel, P-Channel MOSFET	10 V ~ 20 V	6V, 9.5V	2A, 2A	Non-Inverting	600V	9.4ns, 9.7ns	-40°C ~ 150°C (TJ)	Through Hole	14-DIP (0.300", 7.62mm)	14-DIP
IX21844G	IXYS Integrated Circuits Division	IC GATE DVR HALF 600V 14DIP Driven Configuration: Half-Bridge Channel Type: Synchronous Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 10 V ~ 20 V Logic Voltage - VIL, VIH: 0.8V, 2V Current - Peak Output (Source, Sink): 1.4A, 1.8A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600V Rise / Fall Time (Typ): 23ns, 14ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 14-DIP (0.300", 7.62mm) Supplier Device Package: 14-DIP	Package: 14-DIP (0.300", 7.62mm)	Stock7,808	Synchronous	2	IGBT, N-Channel MOSFET	10 V ~ 20 V	0.8V, 2V	1.4A, 1.8A	Non-Inverting	600V	23ns, 14ns	-40°C ~ 150°C (TJ)	Through Hole	14-DIP (0.300", 7.62mm)	14-DIP
IX2113BTR	IXYS Integrated Circuits Division	IC GATE DVR HIGH/LOW 600V 16SOIC Driven Configuration: Half-Bridge Channel Type: Independent Number of Drivers: 2 Gate Type: IGBT, N-Channel, P-Channel MOSFET Voltage - Supply: 10 V ~ 20 V Logic Voltage - VIL, VIH: 6V, 9.5V Current - Peak Output (Source, Sink): 2A, 2A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600V Rise / Fall Time (Typ): 9.4ns, 9.7ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SOIC	Package: 16-SOIC (0.295", 7.50mm Width)	Stock2,176	Independent	2	IGBT, N-Channel, P-Channel MOSFET	10 V ~ 20 V	6V, 9.5V	2A, 2A	Non-Inverting	600V	9.4ns, 9.7ns	-40°C ~ 150°C (TJ)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SOIC
IXDN614PI	IXYS Integrated Circuits Division	14A 8 PIN DIP NON INVERTING Driven Configuration: Low-Side Channel Type: Single Number of Drivers: 1 Gate Type: IGBT, N-Channel, P-Channel MOSFET Voltage - Supply: 4.5 V ~ 35 V Logic Voltage - VIL, VIH: 0.8V, 3V Current - Peak Output (Source, Sink): 14A, 14A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 25ns, 18ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-DIP	Package: 8-DIP (0.300", 7.62mm)	Stock33,000	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	14A, 14A	Non-Inverting	-	25ns, 18ns	-55°C ~ 150°C (TJ)	Through Hole	8-DIP (0.300", 7.62mm)	8-DIP